Entries |
Document | Title | Date |
20080203506 | Capacitive Junction Modulator, Capacitive Junction And Method For Making Same - The invention concerns a capacitive junction including a region adapted to be traversed by an electromagnetic wave, and a dielectric layer interposed between two semiconductor material layers. The dielectric layer has a reduced thickness at the region, that is a thickness at the region less than its thickness at a contact of the junction. Such a junction is for instance used to form a modulator. The invention also concerns a method for making such a junction. | 08-28-2008 |
20080217712 | Apparatus and method for forming optical black pixels with uniformly low dark current - An apparatus and method for forming optical black pixels having uniformly low dark current. Optical Black opacity is increased without having to increase Ti/TiN layer thickness. A hybrid approach is utilized combining a Ti/TiN OB layer in conjunction with in-pixel metal stubs that further occlude the focal radius of each pixel's incoming light beam. Additional metal layers can be used to increase the opacity into the infrared region. | 09-11-2008 |
20080217713 | TWO-DIMENSIONAL SEMICONDUCTOR DETECTOR HAVING MECHANICALLY AND ELECTRICALLY JOINED SUBSTRATES - The present invention relates to an industrial or medical radiation detector and a radiation imaging device equipped with the same. More specifically, the present invention relates to a technology for improving the detection properties and production efficiency for radiation detectors. The invention in claim | 09-11-2008 |
20080237758 | IMAGE DETECTION APPARATUS AND METHOD FOR PRODUCING THE APPARATUS - An image detection apparatus includes a substrate, a middle layer formed on the substrate, the middle layer having a quadrilateral hole, and a photoelectric conversion layer deposited on the middle layer. The curvature radius of each of the corner portions of the quadrilateral hole is greater than or equal to 2 μm. Further, the photoelectric conversion layer is made of an amorphous material. | 10-02-2008 |
20080237759 | Semiconductor device - An open portion is provided to an interlayer insulation film so as to correspond to a photoreceptor part of an optical detection device. A partition wall for surrounding the open portion ( | 10-02-2008 |
20080237760 | Substrate for Transparent Electrodes - One object of the present invention is to provide a transparent electrode substrate with an ITO film formed thereon, used for example as the transparent electrode plate in a dye sensitized solar cell, for which the electrical resistance does not increase even when exposed to high temperatures of 300° C. or higher. In order to achieve the object, the present invention provides a substrate for a transparent electrode, wherein two or more layers of different transparent conductive films are formed on a transparent substrate, and an upper layer transparent conductive film has a higher heat resistance than that of a lower layer transparent conductive film. | 10-02-2008 |
20080246105 | Detector System and Detector Subassembly - A detector system ( | 10-09-2008 |
20080290434 | Color photodetector apparatus with multi-primary pixels - The invention discloses the color photodetector with multi-primary is introduced to detect the incident light with specific wavelength regimes. Combining the surface plasma resonance effect with photodetector can be utilized to enhance the photo-responsivity of the demanded light wavelength and also can substitute the conventionally color filter and infrared cutter. In this invention, a novel integrated photo-detector that can be realized in commercial CMOS process for achieving low-cost consideration. | 11-27-2008 |
20080296712 | Assembling Two Substrates by Molecular Adhesion - The invention relates to an assembly method to enable local electrical bonds between zones located on a face of a first substrate and corresponding zones located on a face of a second substrate, said faces being located facing each other, at least one of the substrates having a surface topography, characterised in that the method comprises steps consisting of:
| 12-04-2008 |
20080315337 | Light receiving element - There is provided a structure for a light receiving element having a plurality of light receiving regions, whereby noise charges from a light receiving region can be prevented from becoming superimposed on the signal charges of another light receiving region so that the light receiving regions can generate accurate electric current signals. The structure includes a first light receiving region and a second light receiving region formed on a semiconductor substrate, and a selection circuit connected to the first and second light receiving regions. Each light receiving region has at least one light receiving unit that is divided into a plurality of segments and that outputs current signals in response to incident light. The selection circuit selectively outputs the current signals from either the first light receiving region or the second light receiving region, and which connects the other to a predetermined potential. | 12-25-2008 |
20080315338 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a substrate with a photodiode formed thereon. A metal interconnection and interlayer dielectric layer can be formed on the substrate, the interlayer dielectric layer having a recess structure formed by selectively removing a region of the interlayer dielectric layer corresponding to the photodiode. A clad layer can be provided on the interlayer dielectric layer, including along the walls and bottom of the recess structure, and a core layer can be formed on the clad layer. | 12-25-2008 |
20090001489 | SILICON PHOTODETECTOR AND METHOD FOR FORMING THE SAME - A structure of a silicon photodetector and a method for forming the same by using the conventional CMOS semiconductor manufacturing process and micro-electromechanical system manufacturing process, in which the micro-electromechanical system manufacturing process (lateral etching process) is applied for elimination of effect and interference caused by a substrate of the silicon photodetector after optical absorption thereof, thereby greatly improving the response speed of the silicon photodetector. This can be done only by applying the lateral etching process onto a portion of the substrate of the silicon photodetector after the semiconductor manufacturing process is finished, through which slow diffusion carriers produced from the optical absorption of the substrate can be effectively reduced and the response speed is thus enhanced. | 01-01-2009 |
20090032892 | Image TFT array of a direct X-ray image sensor and method of fabricating the same - A method of fabricating an image TFT array of a direct X-ray image sensor includes forming a first transparent conductive layer on a substrate; forming a gate line including a gate electrode, a common line, and a common electrode jutting out from the common line; forming an insulation layer; forming a semiconducting island on the insulation layer in the transistor region; forming a first via hole for the common electrode; forming a data line and a source electrode and a drain electrode; forming a passivation layer and a second via hole penetrating the passivation layer for the source electrode; forming a second transparent conductive layer as a top electrode. The insulation layer is formed on the first transparent conductive layer to serve as a dielectric layer of a capacitor before the TFT structure formed and can be formed at a relatively high temperature. | 02-05-2009 |
20090072335 | Image sensor package - An image sensor package is provided. The image sensor package may include a semiconductor substrate, an image sensor stacked over an upper surface of the semiconductor substrate, a pad formed on a lower surface of the semiconductor substrate and electrically connected with the image sensor, and a passive component formed by a thin film process on a lower surface of the semiconductor substrate and electrically connected with the pad. | 03-19-2009 |
20090127642 | PHOTOELECTRIC SURFACE, ELECTRON TUBE COMPRISING SAME, AND METHOD FOR PRODUCING PHOTOELECTRIC SURFACE - A photoelectric element | 05-21-2009 |
20090159999 | QUANTUM DOT SOLAR CELL WITH ELECTRON RICH ANCHOR GROUP - A solar cell may including a quantum dot, an electron conductor and a bridge molecule disposed between the quantum dot and the electron conductor. The bridge molecule may include a quantum dot anchor that bonds to the quantum dot and an electron conductor anchor that bonds to the electron conductor. The quantum dot anchor may be an electron-rich anchor group that includes a Group 5A element. The solar cell may also include a hole conductor that is configured to reduce the quantum dot once the quantum dot absorbs a photon and ejects an electron through the bridge molecule and into the electron conductor. | 06-25-2009 |
20090166774 | WIRE BONDING METHOD AND SEMICONDUCTOR DEVICE - First and second semiconductor chips are arranged side by side on a package base. A plurality of electrode pads with exposed Al films are formed at regular intervals on the first and second semiconductor chips. An Au bump is formed on each electrode pad of the second semiconductor chip. Each electrode pad of the first semiconductor chip is paired with each electrode pad of the second semiconductor chip. The electrode pads of each pair are equally spaced, and interconnected with a gold wire by wire bonding. In the wire bonding process, ball bonding is performed to the electrode pad of the first semiconductor chip as a first target, and stitch bonding is performed to the Au bump on the electrode pad of the second semiconductor chip as a second target. | 07-02-2009 |
20090166775 | METHOD FOR MANUFACTURING IMAGE SENSOR - Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, a method may include forming a semiconductor substrate including a pixel part and a peripheral part, forming an interlayer dielectric film including a metal wire on and/or over the semiconductor substrate, forming photo diode patterns on and/or over the interlayer dielectric film and connected to the metal wire in the pixel part, forming a device isolation dielectric layer on and/or over the interlayer dielectric film including the photo diode patterns, forming a first via hole on and/or over the device isolation dielectric layer to partially expose the photo diode patterns, and forming a second via hole on and/or over the device isolation dielectric layer to expose the metal wire in the peripheral part. According to embodiments, vertical integration of transistor circuitry and a photo diode may be achieved. | 07-02-2009 |
20090166776 | IMAGE SENSOR AND FABRICATING METHOD THEREOF - An image sensor includes an insulating interlayer including a metal line on a semiconductor substrate, a photodiode pattern provided on the insulating interlayer to be connected to the metal line, the photodiode pattern separated per unit pixel by a gap area, a device isolation insulating layer provided on the insulating interlayer including the photodiode pattern and the gap area, a contact hole provided to the device isolation insulating layer to expose the photodiode pattern and a neighbor photodiode pattern, and a contact plug provided to the contact hole to be connected to a plurality of the photodiode patterns. | 07-02-2009 |
20090166777 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method of manufacturing an image sensor. According to embodiments, an image sensor may include a gate over a semiconductor substrate, a first impurity region over the semiconductor substrate, a second impurity region over the semiconductor substrate, the second impurity region being shallower than the first impurity region, and a third impurity region formed in the first impurity region, and bent toward the gate at a predetermined angle. According to embodiments, the third impurity region may be an n-type impurity region. According to embodiments, an area of a photodiode may be increased and a transfer efficiency of electrons generated from a photodiode may be increased. | 07-02-2009 |
20090166778 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method for manufacturing the same. According to embodiments, a semiconductor substrate may include a pixel part and a peripheral part. A photo diode pattern may be formed over the pixel part having a height that is greater than a height of a surface of an interlayer dielectric film over the peripheral part. A device isolation film and a metal layer may be provided over the photodiode and over interlayer dielectric film over the peripheral part. A planarization layer may be provided and may compensate for a height difference so that a first metal film pattern connected to the photo diode pattern and a second metal film pattern connected to the metal wire in peripheral part may be simultaneously formed by patterning the planarization layer and metal film. | 07-02-2009 |
20090166779 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method of manufacturing an image sensor. According to embodiments, an image sensor may include a first substrate, a photodiode, and an ion implantation isolation layer. According to embodiments, circuitry including a metal interconnection may be disposed over the first substrate. A photodiode may be provided in a crystalline semiconductor layer bonded to the first substrate, and electrically connected to the metal interconnection. The ion implantation isolation layer may be provided in the photodiode. | 07-02-2009 |
20090166780 | PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE FOR SOLAR APPLICATION AND ETCHING SOLUTION - Provided is: a process for producing safely at low cost a semiconductor substrate excellent in photoelectric transduction efficiency, in which a fine uneven structure suitable for a solar cell can be formed uniformly with desired size on the surface of the semiconductor substrate; a semiconductor substrate for solar application in which a uniform and fine pyramid-shaped uneven structure is provided uniformly within the surface thereof, and an etching solution for forming a semiconductor substrate having a uniform and fine uneven structure. A semiconductor substrate is etched with the use of an alkali etching solution containing at least one kind selected from the group consisting of carboxylic acids having a carbon number of 1 to 12 and having at least one carboxyl group in a molecule, and salts thereof, to thereby form an uneven structure on the surface of the semiconductor substrate. | 07-02-2009 |
20090174017 | SOLID-STATE IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF AS WELL AS SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THEREOF - A solid-state image sensor and a method for manufacturing thereof and a semiconductor device and a method for manufacturing thereof are provided. A semiconductor substrate is made to be the thin film without using an SOI substrate and cost is reduced. An edge detection portion having hardness larger than that of a semiconductor substrate is formed in the thickness direction of the semiconductor substrate; the semiconductor substrate is made to be the thin film until a position where the edge detection portion is exposed by chemical mechanical polishing from the rear surface; and means Tr | 07-09-2009 |
20090184382 | METHOD TO REDUCE DISLOCATION DENSITY IN SILICON - A crystalline material structure is provided. The crystalline material structure includes a semiconductor structure being annealed at temperatures above the brittle-to-ductile transition temperature of the semiconductor structure, and cooled in an approximately linear time-temperature profile down to approximately its respective transition temperature T | 07-23-2009 |
20090194834 | Photoelectrochemical device and method using carbon nanotubes - A photoelectrochemical device and method using carbon nanotubes comprise highly electrically conductive carbon nanotubes formed at an interface between a transparent electrode and a metal oxide layer. According to the photoelectrochemical device and method, the interface resistance, which is caused due to an incomplete contact at the interface, is lowered and thus the electron mobility is improved, leading to high power conversion efficiency. | 08-06-2009 |
20090200621 | PHOTODIODE CHIP HAVING A HIGH LIMIT FREQUENCY - The invention relates to a photodiode chip which has a great limit frequency and a junction from the active photodiode area of a photodiode mesa to the output pad of the high-frequency output of the photodiode chip. The aim of the invention is to further increase the bandwidth factor of photodiode chips. Said aim is achieved by establishing the connection from the photodiode mesa to the output pad by means of a high-resistance wire with impedance (Z | 08-13-2009 |
20090206429 | ANGLED IMPLANT FOR TRENCH ISOLATION - A trench isolation having a sidewall and bottom implanted region located within a substrate of a first conductivity type is disclosed. The sidewall and bottom implanted region is formed by an angled implant, a 90 degree implant, or a combination of an angled implant and a 90 degree implant, of dopants of the first conductivity type. The sidewall and bottom implanted region located adjacent the trench isolation reduces surface leakage and dark current. | 08-20-2009 |
20090243010 | THINFILM DEPOSITION METHOD, THINFILM DEPOSITION APPARATUS, AND THINFILM SEMICONDUCTOR DEVICE - A substrate holding unit, a plasma treatment chamber, and a nanoparticle supplying chamber are housed in a single chamber. The substrate holding unit holds a substrate. The plasma treatment chamber includes a gas passage for introducing a source gas to a vicinity of the substrate and a plasma generating unit that generates a plasma from the source gas. The nanoparticle supplying chamber includes a spraying member for spraying a nanoparticle-containing medium onto a surface of the substrate. | 10-01-2009 |
20090261438 | VISIBLE-RANGE SEMICONDUCTOR NANOWIRE-BASED PHOTOSENSOR AND METHOD FOR MANUFACTURING THE SAME - A semiconductor nanowire-based photosensor includes a substrate, at least a top surface of the substrate being formed of an insulator, two electrodes spaced at a predetermined interval apart from each other on the substrate, metal catalyst layers disposed respectively on the two electrodes, and visible-range semiconductor nanowires grown from the metal catalyst layers on the two electrodes. The semiconductor nanowires grown from one of the metal catalyst layers are in contact with the semiconductor nanowires grown from the other metal catalyst layer, while the semiconductor nanowires grown respectively from the metal catalyst layers on the two electrodes are floated between the two electrodes over the substrate. | 10-22-2009 |
20090267167 | DUAL-FACE FLUID COMPONENTS - A fluid component includes at least one substrate of a material that can be etched and an etch stop layer for said material means for detecting the properties of a fluid and/or for activating said fluid and provided on a first side of said etch stop layer and means for receiving said fluid, formed in the substrate and provided on the second side of the etch stop layer. | 10-29-2009 |
20090294883 | METHOD FOR ELECTRONICALLY PINNING A BACK SURFACE OF A BACK-ILLUMINATED IMAGER FABRICATED ON A UTSOI WAFER - A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer. | 12-03-2009 |
20090294884 | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate. | 12-03-2009 |
20100001357 | INTEGRATED CIRCUIT PACKAGE, NOTABLY FOR IMAGE SENSOR, AND METHOD OF POSITIONING - The invention relates to the fabrication of integrated circuits in general, and notably the circuits of image sensors intended to form the electronic core of photographic apparatus or cameras. The chip is first aligned with respect to the package and then the package is aligned with respect to the optical system. The alignment of the chip with respect to the package is done optically. The alignment of the package with respect to the system is done mechanically with respect to the edges of the package. According to the invention, provision is made for optical marks to be provided on the package, these marks each having an edge aligned with a lateral edge of the package, so as to minimize the positioning errors which would be due to inaccurate positioning of the chip with respect to the edges of the package. | 01-07-2010 |
20100006961 | Recessed Germanium (Ge) Diode - A photodiode is formed in a recessed germanium (Ge) region in a silicon (Si) substrate. The Ge region may be fabricated by etching a hole through a passivation layer on the Si substrate and into the Si substrate and then growing Ge in the hole by a selective epitaxial process. The Ge appears to grow better selectively in the hole than on a Si or oxide surface. The Ge may grow up some or all of the passivation sidewall of the hole to conformally fill the hole and produce a recessed Ge region that is approximately flush with the surface of the substrate, without characteristic slanted sides of a mesa. The hole may be etched deep enough so the photodiode is thick enough to obtain good coupling efficiencies to vertical, free-space light entering the photodiode. | 01-14-2010 |
20100006962 | Method of manufacturing a porous structure - Disclosed is a method for fabrication of a porous structure that can prevent release of a protective layer from a semiconductor substrate even if a liquid chemical is used during an anodic oxidation process. The method includes forming an oxide layer on an upper face of the semiconductor substrate. The semiconductor substrate has a diffusion layer in its upper face. The method also includes forming a plurality of contact holes at desired positions of the oxide layer. The method also includes forming a wire in each of the contact holes, and forming an opening between wires to expose a surface of the diffusion layer. The method also includes forming a drain on a peripheral circumference of the opening and depositing a protective film over an entire upper part of the substrate. The protective film fills the drain. The method also includes removing most of the protective film from the opening while leaving behind a part of the protective film on the peripheral circumference of the opening and exposing a certain portion of the diffusion layer. The method also includes applying an anodic oxidation process to the exposed diffusion layer using the remaining protective film as a protective layer. | 01-14-2010 |
20100013036 | Thin Sacrificial Masking Films for Protecting Semiconductors From Pulsed Laser Process - The present disclosure is directed to systems and methods for protecting a semiconductor product or material from harmful effects of pulsed laser irradiation. In some embodiments, a thin sacrificial protective mask layer that expires after one laser processing operation is applied to the surface of the product or material to be laser-treated. The thin protective mask layer reflects, absorbs, or otherwise protects the underlying product or material from the energy of the laser. | 01-21-2010 |
20100013037 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A method for manufacturing a solar cell is provided. The manufacturing method includes: depositing a transparent conductive layer on a substrate; patterning the transparent conductive layer; forming a semiconductor layer including deposited on the patterned transparent conductive layer; patterning the semiconductor layer; coating a metal powder on the patterned semiconductor layer; forming a rear electrode layer on the semiconductor layer coated with the metal powder; and patterning the rear electrode layer and the semiconductor layer. This method is useful for producing a solar cell with improved light absorption efficiency. | 01-21-2010 |
20100013038 | PHOTO-SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A photo-semiconductor device comprises a photoconductive semiconductor film provided with electrodes and formed on a second substrate, the semiconductor film being formed by epitaxial growth on a first semiconductor substrate different from the second substrate, the second substrate being also provided with electrodes, the electrodes of the second substrate and the electrodes of the photoconductive semiconductor film being held in contact with each other. | 01-21-2010 |
20100044812 | STRATIFIED PHOTODIODE FOR HIGH RESOLUTION CMOS IMAGE SENSOR IMPLEMENTED WITH STI TECHNOLOGY - A stratified photodiode for high resolution CMOS image sensors implemented with STI technology is provided. The photodiode includes a semi-conductive layer of a first conductivity type, multiple doping regions of a second conductivity type, multiple doping regions of the first conductivity type, and a pinning layer. The multiple doping regions of the second conductivity type are formed to different depths in the semi-conductive layer. The multiple doping regions of the first conductivity type are disposed between the multiple doping regions of the second conductivity type and form multiple junction capacitances without full depletion. In particular, the stratified doping arrangement allows the photodiode to have a small size, high charge storage capacity, low dark current, and low operation voltages. | 02-25-2010 |
20100052083 | PHOTOCONDUCTIVE DEVICE - A photoconductive device comprising a photoconductive portion for generating carriers by applied excitation light; a resistance portion in contact with the photoconductive portion; a first conductive portion in contact with the resistance portion; and a second conductive portion that is provided so as to have a gap with respect to the first conductive portion and is in contact with the photoconductive portion. | 03-04-2010 |
20100072567 | Image Sensor and Method For Manufacturing the Same - Disclosed are an image sensor and a method for manufacturing the same. The image sensor includes an isolation trench formed in a semiconductor substrate corresponding to a logic region and a pixel separating trench formed on the semiconductor substrate corresponding to a pixel region and having a depth shallower than a depth of the isolation trench of the logic region, a barrier region formed below the pixel separating trench, a pixel separator formed inside the pixel separating trench, a gate formed above the semiconductor substrate, a first doped region formed at a deep region of the semiconductor substrate corresponding to one side of the gate, an additionally-doped region interposed between the first doped region and the barrier region, and a second doped region formed at a shallow region of the semiconductor substrate such that the second doped region makes contact with the first doped region. | 03-25-2010 |
20100117172 | THIN FILM SEMICONDUCTOR ALLOY MATERIAL PREPARED BY A VHF ENERGIZED PLASMA DEPOSITION PROCESS - A thin film, hydrogenated, silicon based semiconductor alloy material is produced by a VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate. The process is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300° C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. Also disclosed are photovoltaic devices which include the semiconductor material. | 05-13-2010 |
20100117173 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A method of manufacturing an image sensor may include forming a photodiode having a first doping layer and/or a second doping layer over an interlayer dielectric, and forming a via hole through a photodiode, which may expose a portion of a surface of an interconnection. A method of manufacturing an image sensor may include forming a barrier pattern over a via hole which may cover an exposed surface of a second doping layer, and a contact plug on and/or over a via hole, which may connect an interconnection and a first doping layer. An upper portion of a contact plug may be etched. An insulating layer may be formed over a contact plug. | 05-13-2010 |
20100117174 | METHOD OF MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor and devices thereof. A method of manufacturing an image sensor may include forming an interlayer dielectric layer, which may include a metal line, on and/or over a semiconductor substrate. A method of manufacturing an image sensor may include forming an image sensing part, including a stacked structure having a first doped layer and/or a second doped layer, on and/or over a interlayer dielectric layer. A method of manufacturing an image sensor may include forming a via hole, which may expose a metal line by perforating a image sensing part and/or a interlayer dielectric layer. A method of manufacturing an image sensor may include performing a cleaning process. An undercut may be formed on and/or over a image sensing part when a via hole is formed, and/or a native oxide layer may be substantially removed from a undercut through a cleaning process. | 05-13-2010 |
20100140728 | LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS - A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop. | 06-10-2010 |
20100140729 | LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS - A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop. | 06-10-2010 |
20100200940 | Photodetector for Imaging System - There is disclosed a substrate including at least one photodetector, the photodetector having a first active area on a first surface of the substrate and a second active area on a second surface of the substrate, wherein the photodetector is provided with a conductive via electrically isolated from the substrate, said conductive via extending through the photodetector from the first surface of the substrate to the second surface of the substrate for connecting the first active area to the second surface of the substrate, the second surface providing electrical connections for the first and second active areas of the photodetector. | 08-12-2010 |
20100230771 | METHODS AND ARRANGEMENT FOR DIFFUSING DOPANTS INTO SILICON - A method for diffusing two dissimilar dopant materials onto a semiconductor cell wafer in a single thermal processing step. The method includes placing a first dopant source on a semiconductor cell wafer, placing said cell wafer into a thermal processing chamber comprising one or more cell wafer slots, subjecting said cell wafer to a thermal profile; and annealing said cell wafer in the presence of a second dopant source. | 09-16-2010 |
20100270635 | Semiconductor Surface Modification - Methods, systems, and devices associated with surface modifying a semiconductor material are taught. One such method includes providing a semiconductor material having a target region and providing a dopant fluid layer that is adjacent to the target region of the semiconductor material, where the dopant fluid layer includes at least one dopant. The target region of the semiconductor material is lased so as to incorporate the dopant or to surface modify the semiconductor material. During the surface modification, the dopant in the dopant fluid layer is actively replenished. | 10-28-2010 |
20100276772 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - Provided are a photoelectric conversion device ( | 11-04-2010 |
20100289099 | INTEGRATION OF VACUUM MICROELECTRONIC DEVICE WITH INTEGRATED CIRCUIT - A device includes an integrated circuit (IC) and at least one ultra-small resonant structure formed on said IC. At least the ultra-small resonant structure portion of the device is vacuum packaged. The ultra-small resonant structure portion of the device may be grounded or connected to a known electrical potential. The ultra-small resonant structure may be electrically connected to the underlying IC, or not. | 11-18-2010 |
20110024854 | SOLID-STATE IMAGE SENSING DEVICE CONTAINING ELECTRON MULTIPLICATION FUNCTION - A solid state imaging device includes a P-type semiconductor substrate | 02-03-2011 |
20110024855 | PHOTODETECTOR - An infrared detector ( | 02-03-2011 |
20110057276 | METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL STRUCTURE - In the frame of manufacturing a photovoltaic cell a layer ( | 03-10-2011 |
20110073971 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD FOR THE SAME - A MOS solid-state imaging device having: a semiconductor substrate provided with a pair of source and drain regions in a pixel area, the pair of source and drain regions constituting part of a transistor in the pixel area; an insulating film formed over the semiconductor substrate; a wiring layer formed over the insulating film; and a contact plug penetrating through the insulating film to connect either one of the pair of source and drain regions with the wiring layer, wherein a surface area of said one of the pair of source and drain regions is silicided, the surface area contacting with the contact plug, and a width of the surface area is equal to a width of the contact plug. | 03-31-2011 |
20110079866 | SOLID-STATE IMAGE PICKUP DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A method for manufacturing a solid-state image pickup device is provided. In this method, a pixel isolation member is formed in a semiconductor substrate including pixels, and the thickness of the substrate is reduced by CMP. For forming the pixel isolation member, a first pixel isolation member is formed by implanting impurity ions in a region of the substrate so that the pixels are disposed between portions of the region when viewed from a surface of the substrate. A second isolation member is also formed by forming a trench in a region of the substrate different from the first pixel isolation member so that the pixels are disposed between portions of the region, and then filling the trench with an electroconductive material harder to polish by CMP than the substrate. The CMP is performed on the rear side of the substrate using the second pixel isolation member as a stopper. | 04-07-2011 |
20110089513 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device has an active region formed on a semiconductor substrate, a trench-type element isolation region formed on the semiconductor substrate, and a diffusion region in which fluorine is diffused that surrounds the element isolation region and is formed on the semiconductor substrate so as not to contact the active region. | 04-21-2011 |
20110095387 | SEMICONDUCTOR DEVICES HAVING AN ENHANCED ABSORPTION REGION AND ASSOCIATED METHODS - Photosensitive semiconductor devices and associated methods are provided. In one aspect, for example, a photosensitive semiconductor device can include an electromagnetic radiation absorption layer having a thickness of less than or equal to about 200 μm, wherein the electromagnetic radiation absorption layer includes a semiconductor material and an enhanced absorption region. The electromagnetic radiation absorption layer is operable to absorb greater than or equal to about 40% of incident electromagnetic radiation having at least one wavelength greater than or equal to about 1064 nm. | 04-28-2011 |
20110101479 | PHOTOVOLTAIC DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS - A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor. | 05-05-2011 |
20110127627 | SENSING ENVIRONMENTAL PARAMETER THROUGH STRESS INDUCED IN IC - A sensor is provided for sensing a value of a physical parameter characteristic of the sensor's environment. The sensor is implemented in semiconductor technology. A behavior of the sensor's electronic circuitry is affected by stress. The stress is induced by a film covering the circuitry or only part thereof. The stress is caused by the film's material, whose dimensions depend on a value of the parameter. This dependence is different from the 5 dependence of the circuitry's substrate on the same parameter. | 06-02-2011 |
20110193187 | ELECTRODE MEMBER FOR SPECIFIC DETECTION OF ANALYTE USING PHOTOCURRENT - Disclosed is an electrode member for specific detection of an analyte using a photocurrent. The electrode member has at least a conductive substrate and an electron-accepting substance provided on said conductive substrate. The aforementioned electron-accepting substance consists at least of a first substance layer that is made of a semiconductor and a second substance that is made of a semiconductor of a kind different from that of the aforementioned semiconductor, a metal or a metal oxide, and is carried on the surface of said first substance layer. With the electrode member, improved detection sensitivity for the test substance and improved measurement precision can be achieved with specific detection of an analyte using a photocurrent. | 08-11-2011 |
20110221017 | PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE ADHESIVE FILM, AND LIGHT-RECEIVING DEVICE - A photosensitive resin composition includes (A) an alkali-soluble resin, (B) an epoxy resin, and (C) a photopolymerization initiator, the epoxy resin (B) being an epoxy resin having a naphthalene skeleton and/or an epoxy resin having a triphenylmethane skeleton. A semiconductor device including a semiconductor wafer, a transparent substrate, and a spacer formed by a photosensitive adhesive film produced using the photosensitive resin composition does not suffer from condensation of dew. A light-receiving device having excellent reliability can also be obtained. | 09-15-2011 |
20110233701 | PHOTOELECTRIC CONVERSION DEVICE AND SOLID-STATE IMAGING DEVICE - A photoelectric conversion device comprising a photoelectric conversion part including a first electrode layer, a second electrode layer and a photoelectric conversion layer provided between the first electrode layer and the second electrode layer, wherein light is made incident from an upper part of the second electrode layer into the photoelectric conversion layer; the photoelectric conversion layer generates a charge containing an electron and a hole corresponding to the incident light from the upper part of the second electrode layer; and the first electrode layer works as an electrode for extracting the hole. | 09-29-2011 |
20110266644 | SEMICONDUCTOR PHOTODETECTION ELEMENT - A semiconductor photodetection element SP has a silicon substrate | 11-03-2011 |
20110278686 | Semiconductor device and method of manufacturing semiconductor device - Provided is a semiconductor device for performing photoelectric conversion of incident light, including: a p-type substrate ( | 11-17-2011 |
20120001283 | Germanium Photodetector - A method for forming a photodetector device includes forming an insulator layer on a substrate, forming a germanium (Ge) layer on the insulator layer and a portion of the substrate, forming a second insulator layer on the Ge layer, implanting n-type ions in the Ge layer, patterning the n-type Ge layer, forming a capping insulator layer on the second insulator layer and a portion of the first insulator layer, heating the device to crystallize the Ge layer resulting in an single crystalline n-type Ge layer, and forming electrodes electrically connected to the single crystalline n-type Ge layer. | 01-05-2012 |
20120018828 | Sodium Sputtering Doping Method for Large Scale CIGS Based Thin Film Photovoltaic Materials - A method of processing sodium doping for thin-film photovoltaic material includes forming a metallic electrode on a substrate. A sputter deposition using a first target device comprising 4-12 wt % Na | 01-26-2012 |
20120018829 | TEMPERATURE-ADJUSTED SPECTROMETER - A temperature-adjusted spectrometer can include a light source and a temperature sensor. | 01-26-2012 |
20120056288 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS - A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer. | 03-08-2012 |
20120056289 | MATERIALS, SYSTEMS AND METHODS FOR OPTOELECTRONIC DEVICES - A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer. | 03-08-2012 |
20120061785 | SEMICONDUCTOR LIGHT DETECTING ELEMENT AND MANUFACTURING METHOD THEREFOR - A photodiode PD | 03-15-2012 |
20120068287 | Highly Sensitive Photo-Sensing Element and Photo-Sensing Device Using the Same - According to the present invention, a highly sensitive photo-sensing element and a sensor driver circuit are prepared by planer process on an insulating substrate by using only polycrystalline material. Both the photo-sensing element and the sensor driver circuit are made of polycrystalline silicon film. As the photo-sensing element, a photo transistor is formed by using TFT, which comprises a first electrode | 03-22-2012 |
20120074513 | PHOTOELECTRIC CONVERSION ELEMENT, SOLID-SATE IMAGING ELEMENT, IMAGING APPARATUS, AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element includes an insulating film, a first electrode, a light receiving layer, and a second electrode. The first electrode is formed on the insulating film and is made of titanium oxynitride. The light receiving layer is formed on the first electrode and includes an organic material. A composition of the first electrode just before forming the light receiving layer meets (1) a requirement that an amount of oxygen contained in the whole of the first electrode is 75 atm % or more of an amount of titanium, or (2) a requirement that in a range of from the substrate side of the first electrode to 10 nm or a range of from the substrate side of the first electrode to ⅔ of the thickness of the first electrode, an amount of oxygen is 40 atm % or more of an amount of titanium. | 03-29-2012 |
20120119314 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND ELECTRONIC APPARATUS - A photoelectric conversion element includes a first electrode, a second electrode, and a photoelectric conversion element provided between the first electrode and the second electrode. The photoelectric conversion element includes a polymer. The polymer includes at least one light absorber which absorbs light and generates at least one kind of carrier. An end part of the polymer combines with a surface, which faces the second electrode, of the first electrode. | 05-17-2012 |
20120119315 | SENSING DEVICES - A sensing device ( | 05-17-2012 |
20120139070 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a manufacturing method, the following regions are formed in a semiconductor substrate: a pixel region where a photoelectric conversion element is placed and a peripheral region placed in the peripheral portion of the pixel region. The following wiring and film are formed over the main surface of the semiconductor substrate: an uppermost-layer wiring and a first interlayer insulating film located over the uppermost-layer wiring. The uppermost surface of the first interlayer insulating film is flattened. After the step of flattening the uppermost surface, the uppermost surface of the first interlayer insulating film in the pixel region is flat; and a step is formed in the uppermost surface of the first interlayer insulating film in the peripheral region. | 06-07-2012 |
20120153416 | PHOTOELECTRIC CONVERSION ELEMENT - An object is to provide a photoelectric conversion element with high conversion efficiency. In a photoelectric conversion element with a fine periodic structure on a light-receiving surface side, focus is given to the traveling direction of light that is reflected off another surface. The photoelectric conversion element may be given a structure in which a textured structure that reflects light to the other surface is provided, and light that travels from the light-receiving surface side to the other surface side is reflected so that a component that travels along the photoelectric conversion layer increases. By the distance traveled by the reflected light inside the photoelectric conversion layer increasing, the light that enters the photoelectric conversion element is more easily absorbed by the photoelectric conversion layer and less easily released from the light-receiving surface side, and a photoelectric conversion element with high conversion efficiency can be provided. | 06-21-2012 |
20120161267 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device | 06-28-2012 |
20120161268 | PHOTOCURRENT DETECTION ELECTRODE, MANUFACTURING METHOD, AND WORKING ELECTRODE SUBSTRATE - To provide an electrode and working electrode substrate capable of detecting a sample substance, and a manufacturing method capable of producing the electrode by simply operations, the present invention provides, in a photocurrent detection electrode, an adhesive layer containing linker molecules interposed between an electrode body constituted by a semiconductor for receiving electrons released from a test substance by photoexcitation, and a metal layer constituted by a metal. | 06-28-2012 |
20120228730 | MICROCHIP AND SOI SUBSTRATE FOR MANUFACTURING MICROCHIP - A plasma treatment or an ozone treatment is applied to the respective bonding surfaces of the single-crystal Si substrate in which the ion-implanted layer has been formed and the quartz substrate, and the substrates are bonded together. Then, a force of impact is applied to the bonded substrate to peel off a silicon thin film from the bulk portion of single-crystal silicon along the hydrogen ion-implanted layer, thereby obtaining an SOI substrate having an SOI layer on the quartz substrate. A concave portion, such as a hole or a micro-flow passage, is formed on a surface of the quartz substrate of the SOI substrate thus obtained, so that processes required for a DNA chip or a microfluidic chip are applied. A silicon semiconductor element for the analysis/evaluation of a sample attached/held to this concave portion is formed in the SOI layer. | 09-13-2012 |
20120228731 | METHOD FOR FORMING A COMPOUND SEMI-CONDUCTOR THIN-FILM - A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material. | 09-13-2012 |
20120235261 | DEVICE-MOUNTED SUBSTRATE, INFRARED LIGHT SENSOR AND THROUGH ELECTRODE FORMING METHOD - A via hole is formed on a base substrate before a device circuit is formed, and thermal oxidation is performed to form a thermal oxidation layer on a surface of the base substrate on which the device circuit is formed and a surface in the via hole. The device circuit having a conductive section is formed on the base substrate after the thermal oxidation, and then, a conductive body is embedded in the via hole. | 09-20-2012 |
20120235262 | INFRA RED DETECTORS AND METHODS OF MANUFACTURE - A method of forming infra red detector arrays is described, starting with the manufacture of a wafer. The wafer is formed from a GaAs or GaAs/Si substrate having CMT deposited thereon by MOVPE. The CMT deposited can include a number of layers of differing composition, the composition being controlled during the MOVPE process and being dependent on the thickness of the layer deposited. A CdTe buffer layer can aid deposition of the CMT on the substrate. Once the wafer is formed, the buffer layer, an etch stop layer and any intervening layers can be etched away leaving a wafer suitable for further processing into an infra red detector. | 09-20-2012 |
20120241889 | GAS BARRIER FILM, METHOD OF MANUFACTURING GAS BARRIER FILM, AND ORGANIC PHOTOELECTRIC CONVERSION ELEMENT - Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a substrate in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion strength in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion strength is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film. | 09-27-2012 |
20120267738 | OPTICAL DEVICE - An optical device includes: a stem; a mount portion connected with the stem and having an upper face, a first face and a second face opposite to the first face, the first face and the second face constituting a side face with respect to the upper face; an optical element mounted on the upper face of the mount portion; an electronic components mounted on the first face and the second face of the mount portion respectively; a first lead that penetrates the stem and is extended to a side of the first face of the mount portion; and a second lead that penetrates the stem and is extended to a side of the second face of the mount portion. | 10-25-2012 |
20120292725 | DEPOSITION AND POST-PROCESSING TECHNIQUES FOR TRANSPARENT CONDUCTIVE FILMS - In one embodiment, a method is provided for fabrication of a semitransparent conductive mesh. A first solution having conductive nanowires suspended therein and a second solution having nanoparticles suspended therein are sprayed toward a substrate, the spraying forming a mist. The mist is processed, while on the substrate, to provide a semitransparent conductive material in the form of a mesh having the conductive nanowires and nanoparticles. The nanoparticles are configured and arranged to direct light passing through the mesh. Connections between the nanowires provide conductivity through the mesh. | 11-22-2012 |
20120313197 | IN-PIXEL HIGH DYNAMIC RANGE IMAGING - Embodiments of the invention describe providing high dynamic range imaging (HDRI or simply HDR) to an imaging pixel by coupling a floating diffusion node of the imaging pixel to a plurality of metal-oxide semiconductor (MOS) capacitance regions. It is understood that a MOS capacitance region only turns “on” (i.e., changes the overall capacitance of the floating diffusion node) when the voltage at the floating diffusion node (or a voltage difference between a gate node and the floating diffusion node) is greater than its threshold voltage; before the MOS capacitance region is “on” it does not contribute to the overall capacitance or conversion gain of the floating diffusion node. | 12-13-2012 |
20120313198 | CONDUCTIVE PASTE COMPOSITION CONTAINING LITHIUM, AND ARTICLES MADE THEREFROM - A lead-free paste composition contains an electrically conductive silver powder, one or more glass frits or fluxes, and a lithium compound dispersed in an organic medium. The paste is useful in forming an electrical contact on the front side of a solar cell device having an insulating layer. The lithium compound aids in establishing a low-resistance electrical contact between the front-side metallization and underlying semiconductor substrate during firing. | 12-13-2012 |
20120313199 | MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME - The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group. | 12-13-2012 |
20120313200 | MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR - Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 12-13-2012 |
20120326255 | METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTOR DEVICES, SEMICONDUCTOR DEVICE AND TRANSFER MEMBER - Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid ( | 12-27-2012 |
20130020662 | NOVEL CMOS IMAGE SENSOR STRUCTURE - Provided is a method of fabricating an image sensor device. The method includes providing a first substrate having a radiation-sensing region disposed therein. The method includes providing a second substrate having a hydrogen implant layer, the hydrogen implant layer dividing the second substrate into a first portion and a second portion. The method includes bonding the first portion of the second substrate to the first substrate. The method includes after the bonding, removing the second portion of the second substrate. The method includes after the removing, forming one or more microelectronic devices in the first portion of the second substrate. The method includes forming an interconnect structure over the first portion of the second substrate, the interconnect structure containing interconnect features that are electrically coupled to the microelectronic devices. | 01-24-2013 |
20130020663 | SOLID-STATE IMAGING DEVICE AND PRODUCTION METHOD THEREFOR, AND ELECTRONIC APPARATUS - A solid-state imaging device includes a semiconductor substrate and a photoelectric conversion layer above the semiconductor substrate. The photoelectric conversion layer includes a lower electrode having a side surface insulated with an insulating film, a photoelectric conversion film on the lower electrode, and an upper electrode. The upper electrode and the lower electrode sandwich the photoelectric conversion film. An upper surface of the lower electrode is lower than an upper surface of the insulating film. | 01-24-2013 |
20130026587 | PIXEL SENSOR CELLS AND METHODS OF MANUFACTURING - Pixel sensor cells with an opaque mask layer and methods of manufacturing are provided. The method includes forming a transparent layer over at least one active pixel and at least one dark pixel of a pixel sensor cell. The method further includes forming an opaque region in the transparent layer over the at least one dark pixel. | 01-31-2013 |
20130026588 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The object is to improve the conversion efficiency of a photoelectric conversion device. This object can be achieved by a photoelectric conversion device including an electrode and a semiconductor layer which is provided on one main surface of the electrode and contains a I-III-VI group compound semiconductor, wherein the semiconductor layer includes a connection layer that is located at a position on the one main surface side of the electrode and has a tendency that, the closer to the one main surface, the greater a quotient obtained by dividing an amount of substance of a I-B group element by an amount of substance of a III-B group element becomes. | 01-31-2013 |
20130032912 | High-k Dielectric Liners in Shallow Trench Isolations - A circuit structure includes a semiconductor substrate having a top surface. A dielectric material extends from the top surface into the semiconductor substrate. A high-k dielectric layer is formed of a high-k dielectric material, wherein the high-k dielectric layer comprises a first portion on a sidewall of the dielectric material, and a second portion underlying the dielectric material. | 02-07-2013 |
20130032913 | GRAPHENE STRUCTURE, PRODUCTION METHOD THEREOF, PHOTOELECTRIC CONVERSION ELEMENT, SOLAR CELL, AND IMAGE PICKUP APPARATUS - A graphene structure includes a conductive layer and a protective layer. The conductive layer is formed of graphene doped with a dopant, and the protective layer is laminated on the conductive layer and formed of a material having a higher oxidation-reduction potential than water. | 02-07-2013 |
20130037900 | SOLID-STATE IMAGING ELEMENT, MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A solid-state imaging element includes a pixel having a photoelectric conversion section and a side pinning layer. The photoelectric conversion section is formed in a semiconductor substrate. The side pinning layer is formed on a side of the photoelectric conversion section. The side pinning layer is formed by performing ion implantation in a state of a trench being open, the trench being formed in a part on a side of a region in which the photoelectric conversion section is formed. | 02-14-2013 |
20130037901 | PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency that improves reliability by increasing contact force between a light absorbing layer and an electrode layer. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer contains a compound semiconductor. The light absorbing layer comprises a first layer close to the electrode layer and a second layer located on the first layer. The first layer has a void ratio lower than that of the second layer. | 02-14-2013 |
20130049149 | METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND ACTINIC-RAY- OR RADIATION-SENSITIVE FILM - Provided is a method of forming a pattern, including forming an actinic-ray- or radiation-sensitive resin composition into a film, the actinic-ray- or radiation-sensitive resin composition including a resin (A) including a repeating unit containing a group that when acted on by an acid, is decomposed to thereby produce a polar group and including an aromatic group, which resin when acted on by an acid, decreases its solubility in an organic solvent, a nonionic compound (B) that when exposed to actinic rays or radiation, generates an acid and a solvent (C), exposing the film to actinic rays or radiation, and developing the exposed film with a developer including an organic solvent to thereby form a negative pattern. | 02-28-2013 |
20130049150 | FORMATION OF METAL NANOSPHERES AND MICROSPHERES - Hemispheres and spheres are formed and employed for a plurality of applications. Hemispheres are employed to form a substrate having an upper surface and a lower surface. The upper surface includes peaks of pillars which have a base attached to the lower surface. The peaks have a density defined at the upper surface by an array of hemispherical metal structures that act as a mask during an etch to remove substrate material down to the lower surface during formation of the pillars. The pillars are dense and uniform and include a microscale average diameter. The spheres are formed as independent metal spheres or nanoparticles for other applications. | 02-28-2013 |
20130062717 | CIRCUIT BOARD - A circuit board includes a board having a hole formed therein, and an imager that is bonded to a first region including at least a portion of the hole in a front surface of the board. | 03-14-2013 |
20130069187 | PHOTOELECTRIC CONVERSION DEVICE - It is an object to provide a photoelectric conversion device with high photoelectric conversion efficiency. The photoelectric conversion device includes an electrode layer, and a light absorbing layer located on the electrode layer. The light absorbing layer is comprised of a plurality of stacked semiconductor layers containing a chalcopyrite-based compound semiconductor. The semiconductor layers contain oxygen. A molar concentration of the oxygen in surfaces and their vicinities of the semiconductor layers where the semiconductor layers are stacked on each other is higher than average molar concentrations of the oxygen in the semiconductor layers. | 03-21-2013 |
20130082341 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR-DEVICE MANUFACTURING METHOD - It is possible to reduce resistance variations of a member connecting a through-silicon via to a line and improve wiring reliability. A hole through which the through-silicon via is to be stretched is created and an over-etching process is carried out on a wiring layer including the line. Then, by embedding copper in the hole, the through-silicon via made of the copper can be created. After the through-silicon via has been connected to the line made of aluminum through the member which is a connection area, the connection area is alloyed in a thermal treatment in order to electrically connect the through-silicon via to the line. Thus, it is possible to reduce variations of a resistance between the through-silicon via and the line and also improve wiring reliability as well. The present technology can be applied to a semiconductor device and a method for manufacturing the semiconductor device. | 04-04-2013 |
20130105924 | SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS | 05-02-2013 |
20130113059 | PHOTOVOLTAIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A photovoltaic device includes a semiconductor substrate; an amorphous first conductive semiconductor layer on a first region of a first surface of the semiconductor substrate and containing a first impurity; an amorphous second conductive semiconductor layer on a second region of the first surface of the semiconductor substrate and containing a second impurity; and a gap passivation layer located between the first region and the second region on the semiconductor substrate, wherein the first conductive semiconductor layer is also on the gap passivation layer. | 05-09-2013 |
20130113060 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device including unit pixel cells, each having a photoelectric conversion film and a pixel electrode which are formed above a silicon substrate, an amplification transistor which is formed on the silicon substrate and outputs a voltage according to a potential of the pixel electrode, and a reset transistor which is formed on the silicon substrate and resets a potential of a gate electrode of the amplification transistor, the imaging device including a vertical signal line which is disposed correspondingly to a column of the unit pixel cells, and transmits a voltage of the unit pixel cells of the corresponding column, and a vertical scanning unit which selects a row of the unit pixel cells having a voltage to be outputted to the vertical signal line, wherein the vertical signal line is located below the pixel electrode of the unit pixel cells corresponding to the vertical signal line. | 05-09-2013 |
20130119499 | Nanoengineered Biophotonic Hybrid Device - Apparatus, compositions, methods, and articles of manufacture are disclosed relating to the design and production of biological components and/or their incorporation in devices and systems, including biohybrid photosensitive devices and systems. In some embodiments, biological components include light antenna structures that collect light and emit Stokes-shifted light to a photoactive non-biological component. In some embodiments, the characteristics of biological components are engineered via force-adaptation of an organism or adaptive system. In some embodiments, biological components are modified by removing reaction centers or other structure not contributing to desired performance. | 05-16-2013 |
20130140662 | PHOTODIODE DEVICE FOR IMPROVING THE DETECTIVITY AND THE FORMING METHOD THEREOF - A method for forming the photodiode device is provided. The method comprises providing a substrate, then a transparent conductive film is formed on the substrate. A conductive polymer is formed on the transparent conductive film. A photoactive layer is formed on the conductive polymer. A charge blocking layer is formed on the photoactive layer. Finally, a cathode metal is formed on the charge blocking layer. | 06-06-2013 |
20130146998 | SINGLE-BAND AND DUAL-BAND INFRARED DETECTORS - Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed. | 06-13-2013 |
20130154040 | PHOTO DETECTORS - Photo detectors are provided. The photo detector includes a photoelectric conversion layer between a lower carrier transportation layer and an upper carrier transportation layer, and a common electrode on the upper carrier transportation layer opposite to the photoelectric conversion layer. The photoelectric conversion layer includes a plurality of light absorption layers and each of the light absorption layers contains silicon nanocrystals. The silicon nanocrystals in respective ones of the light absorption layers have different sizes from each other. | 06-20-2013 |
20130168789 | LOCALIZED SURFACE PLASMON RESONANCE SENSOR USING CHALCOGENIDE MATERIALS AND METHOD FOR MANUFACTURING THE SAME - A localized surface plasmon resonance sensor may include a localized surface plasmon excitation layer including a chalcogenide material. The chalcogenide material may include: a first material including at least one of selenium (Se) and tellurium (Te); and a second material including at least one of germanium (Ge) and antimony (Sb). The localized surface plasmon excitation layer may be prepared by forming a thin film including the chalcogenide material and crystallizing the thin film to have a predetermined pattern by irradiating laser on the thin film. | 07-04-2013 |
20130168790 | ORGANIC PHOTOELECTRIC CONVERSION ELEMENT AND IMAGE ELEMENT - An organic photoelectric conversion element comprises: a pair of electrodes; an organic photoelectric conversion layer arranged between the pair of electrodes; and an positive hole blocking layer arranged between one of the pair of electrodes and the organic photoelectric conversion layer, wherein an ionization potential of the positive hole blocking layer is larger than a work function of the adjoining electrode by 1.3 eV or more, and wherein an electron affinity of the positive hole blocking layer is equal to or larger than that of the adjoining organic photoelectric conversion layer. An electron blocking layer may be arranged between the other one of the pair of electrodes and the organic photoelectric conversion layer, wherein its electron affinity is smaller than a work function of the adjoining electrode by 1.3 eV or more, and its ionization potential is equal to or smaller than that of the adjoining organic photoelectric conversion layer. | 07-04-2013 |
20130181307 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - According to an embodiment, a method of manufacturing a semiconductor device is provided. The method of manufacturing a semiconductor device includes forming a blocking film by a material including at least carbon on an upper surface of a second element among a first element and the second element formed on a semiconductor substrate, the blocking film configured to inhibit the second element from turning into salicide. | 07-18-2013 |
20130181308 | METHODS OF FABRICATING DILUTE NITRIDE SEMICONDUCTOR MATERIALS FOR USE IN PHOTOACTIVE DEVICES AND RELATED STRUCTURES - Dilute nitride III-V semiconductor materials may be formed by substituting As atoms for some N atoms within a previously formed nitride material to transform at least a portion of the previously formed nitride into a dilute nitride III-V semiconductor material that includes arsenic. Such methods may be employed in the fabrication of photoactive devices, such as photovoltaic cells and photoemitters. The methods may be carried out within a deposition chamber, such as a metalorganic chemical vapor deposition (MOCVD) or a vapor phase epitaxy (HVPE) chamber. | 07-18-2013 |
20130181309 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An image pickup apparatus includes photoelectric conversion units each including a first semiconductor region of a first conductivity type and a semiconductor region of a second conductivity type disposed in contact with the first semiconductor region, a potential barrier formed between photoelectric conversion units, and a contact plug disposed in an image sensing area. The number of contact plugs is smaller than the number of photoelectric conversion units. The photoelectric conversion units include first and second photoelectric conversion units and are arranged such that at least two first photoelectric conversion units are adjacent in a first direction. The potential barrier includes a first part formed between the two first photoelectric conversion units disposed adjacently and a second part formed between first and second photoelectric conversion units adjacent to each other. The contact plug is located closer to the first part than to the second part. | 07-18-2013 |
20130200477 | SEMICONDUCTOR PHOTOMULTIPLIER DEVICE - According to embodiments of the present invention, a semiconductor photomultiplier device is provided. The semiconductor photomultiplier device includes a substrate having a front side and a back side, a common electrode of a first conductivity type adjacent to the back side, and a cell including an active region of a second conductivity type adjacent to the front side, and a contact region of the second conductivity type adjacent to the front side, the contact region being spaced apart from the active region by a separation region. | 08-08-2013 |
20130207210 | LOW-CAPACITANCE PHOTODIODE UTILIZING VERTICAL CARRIER CONFINEMENT - A semiconductor device contains a photodiode which includes a buried collection region formed by a bandgap well to vertically confine photo-generated minority carriers. the bandgap well has the same conductivity as the semiconductor material immediately above and below the bandgap well. A net average doping density in the bandgap well is at least a factor of ten less than net average doping densities immediately above and below the bandgap well. A node of the photodiode, either the anode or the cathode, is connected to the buried collection region to collect the minority carriers, the polarity of the node matches the polarity of the minority carriers. The photodiode node connected to the buried collection region occupies less lateral area than the lateral area of the buried collection region. | 08-15-2013 |
20130207211 | WAVELENGTH SENSITIVE PHOTODIODE EMPLOYING SHORTED JUNCTION - A semiconductor device contains a photodiode which has a plurality of p-n junctions disposed in a stack. Two contact structures on the semiconductor device are connected across at least one of the junctions to allow electrical connection to an external detection circuit, so that signal current from incident light on the photodiode which generates electron-hole pairs across the connected junction may be sensed by the external detection circuit. At least one of the junctions is electrically shorted at the semiconductor device, so that signal current from the shorted junction may not be sensed by the external detection circuit. | 08-15-2013 |
20130221463 | SOLID-STATE IMAGING ELEMENT - According to one embodiment, a solid-state imaging element, includes a plurality of impurity regions provided with a prescribed interval, each of the impurity regions acting as a channel for transferring charges, wherein the impurity region has a trapezoid shape in which bases is perpendicularly directed to a charge transfer direction, a width of a first base of the bases at a transferring side is larger than a width of a second base of the bases at a receiving side. | 08-29-2013 |
20130234270 | Atomic Layer Deposition Strengthening Members and Method of Manufacture - In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer. | 09-12-2013 |
20130234271 | CONDUCTIVE COMPOSITIONS AND PROCESSES FOR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above. | 09-12-2013 |
20130241017 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device | 09-19-2013 |
20130256820 | THIN FILM ALUMINUM-CONTAINING PHOTOVOLTAICS - This invention relates to thin film photovoltaic materials containing aluminum, as well as methods for making materials using polymeric precursor compounds. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, devices and systems for energy conversion, and solar cells. This invention further relates to methods for making CA(I,G,A)S, CAIGAS, A(I,G,A)S, AIGAS, C(I,G,A)S, and CIGAS thin film materials by providing one or more polymeric precursor compounds or inks thereof, providing a substrate, depositing the compounds or inks onto the substrate; and heating the substrate. | 10-03-2013 |
20130264668 | Image Sensor Cross-Talk Reduction System and Method - A system and method for reducing cross-talk in complementary metal oxide semiconductor back side illuminated image sensors is provided. An embodiment comprises forming a grid around the pixel regions on an opposite side of the substrate than metallization layers. The grid may be formed of a material such as tungsten with a (110)-rich crystalline orientation. This orientation helps prevents defects that can occur during patterning of the grid. | 10-10-2013 |
20130264669 | METHOD OF MAKING A SEMICONDUCTOR RADIATION DETECTOR - A method of making a semiconductor radiation detector wherein the metal layers which serve as the cathode and anode electrodes are recessed from the designated prospective dice lines which define the total upper and lower surface areas for each detector such that the dicing blade will not directly engage the metal during dicing and therefore prevent metal from intruding upon (smearing) the vertical side walls of the detector substrate. | 10-10-2013 |
20130264670 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film. | 10-10-2013 |
20130270662 | IMAGE SENSOR OF CURVED SURFACE - A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a handle on the first surface; defining trenches in the handle, the trenches forming a pattern in the handle; and installing, on a hollow curved substrate, the obtained device on the free surface side of the handle, the pattern being selected according to the shape of the support surface. | 10-17-2013 |
20130320469 | Image Sensor with Low Step Height between Back-side Metal and Pixel Array - A CMOS image sensor and a method of forming are provided. The CMOS image sensor may include a device wafer. A conductive feature may be formed on a back-side surface of the device wafer. The device wafer may include a pixel formed therein. A passivation layer may be formed over the back-side surface of the device wafer and the conductive feature. A grid film may be formed over the passivation layer. The grid film may be patterned to accommodate a color filter. The grid film pattern may align the color filter to corresponding pixel in the device wafer. A portion of the grid film formed over the conductive feature may be reduced to be substantially planar with portions of the grid film adjacent to the conductive feature. The patterning and reducing may be performed according to etching processes, chemical mechanical processes, and combinations thereof. | 12-05-2013 |
20130320470 | PHOTODETECTOR - A photodetector | 12-05-2013 |
20130328144 | SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC APPARATUS - A semiconductor device includes: a first semiconductor chip; and a second semiconductor chip that is stacked on the first semiconductor chip. The first semiconductor chip includes a first wiring portion of which a side surface is exposed at a side portion of the first semiconductor chip. The second semiconductor chip includes a second wiring portion of which a side surface is exposed at a side portion of the second semiconductor chip. The respective side surfaces of the first wiring portion and the second wiring portion, which are exposed at the side portions of the first semiconductor chip and the second semiconductor chip, are covered by a conductive layer, and the first wiring portion and the second wiring portion are electrically connected to each other through the conductive layer. | 12-12-2013 |
20130334635 | PIXEL STRUCTURE WITH REDUCED VACUUM REQUIREMENTS - A pixel structure, which may be used for infrared bolometers or other microelectromechanical systems (MEMS) devices, configured to increase immunity of the pixel to molecular heat transfer and reduce the vacuum requirements for a wafer level packaged device incorporating the pixel or an array thereof. In one example, the pixel has a perforated body or discontinuous surface structure. | 12-19-2013 |
20140008746 | MESOSCOPIC OPTOELECTRONIC DEVICES COMPRISING ARRAYS OF SEMICONDUCTOR PILLARS DEPOSITED FROM A SUSPENSION AND PRODUCTION METHOD THEREOF - The invention illustrates an innovative way to fabricate low cost, efficient, rigid or flexible mesoscopic optoelectronic devices such as photovoltaic (PV) solar cells or photo sensors (b) comprising three-dimensional arrays of semi-conductive micro- or nano-pillars ( | 01-09-2014 |
20140008747 | METHOD OF PRODUCING ORGANIC PHOTOELECTRIC CONVERSION DEVICE - An organic photoelectric conversion device can be easily produced by a method of producing an organic photoelectric conversion device, comprising forming an anode, forming an active layer on the anode, then, forming a cathode on the active layer by a coating method. | 01-09-2014 |
20140021572 | PHOTODIODE DEVICE AND METHOD FOR PRODUCTION THEREOF - The photodiode device has an electrically conductive cathode layer ( | 01-23-2014 |
20140021573 | SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE - A light receiving layer is formed with an array of photodiodes for accumulating signal charge produced by photoelectric conversion of incident light. A wiring layer provided with electrodes and wiring for controlling the photodiodes is formed behind the light receiving layer in a traveling direction of the incident light. In the light receiving layer, there is formed a projection and depression structure in which a pair of inclined surfaces have symmetric inclination directions and each inclined surface corresponds to each photodiode. Each inclined surface makes the incident light enter each photodiode by a light amount corresponding to an incident angle. | 01-23-2014 |
20140027871 | CHARGE SENSORS USING INVERTED LATERAL BIPOLAR JUNCTION TRANSISTORS - A sensor includes a collector, an emitter and a base-region barrier formed as an inverted bipolar junction transistor having a base substrate forming a base electrode to activate the inverted bipolar junction transistor. A level surface is formed by the collector, the emitter and the base-region barrier opposite the base substrate such that when the level surface is exposed to charge, the charge is measured during operation of the bipolar junction transistor. | 01-30-2014 |
20140035077 | Photovoltaic Device Including Semiconductor Nanocrystals - A photovoltaic device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor. | 02-06-2014 |
20140048897 | PIXEL WITH NEGATIVELY-CHARGED SHALLOW TRENCH ISOLATION (STI) LINER - Embodiments of a pixel including a substrate having a front surface and a photosensitive region formed in or near the front surface of the substrate. An isolation trench is formed in the front surface of the substrate adjacent to the photosensitive region. The isolation trench includes a trench having a bottom and sidewalls, a passivation layer formed on the bottom and the sidewalls, and a filler to fill the portion of the trench not filled by the passivation layer. | 02-20-2014 |
20140054735 | PHOTOELECTRIC CONVERSION MODULE - A photoelectric conversion module is disclosed. In one aspect, the photoelectric conversion module includes 1) first and second conductive substrates facing each other and 2) first and second grid electrodes formed between and respectively electrically connected to the first and second conductive substrates. The photoelectric conversion module also includes a first isolation electrode interposed between and contacting the first conductive substrate and the second grid electrode. The second grid electrode may have a top surface that tightly contacts the first isolation electrode so as to substantially prevent an electrolyte from permeating between the top surface of the second grid electrode and the first isolation electrode. | 02-27-2014 |
20140061830 | CONDUCTIVE PASTE COMPOSITION AND SEMICONDUCTOR DEVICES MADE THEREWITH - A conductive paste composition contains a source of an electrically conductive metal, an alkaline-earth-metal boron tellurium oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor device substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the device. | 03-06-2014 |
20140061831 | CONDUCTIVE PASTE COMPOSITION AND SEMICONDUCTOR DEVICES MADE THEREWITH - A conductive paste composition contains a source of an electrically conductive metal, a Ti—Te—Li oxide, and an organic vehicle. An article such as a high-efficiency photovoltaic cell is formed by a process of deposition of the paste composition on a semiconductor substrate (e.g., by screen printing) and firing the paste to remove the organic vehicle and sinter the metal and establish electrical contact between it and the device. | 03-06-2014 |
20140061832 | SURFACE PLASMON DEVICE - The electro-optical device includes a semiconductor layer, a first metal layer and an electrical insulator layer disposed between the semiconductor layer and the first metal layer. The electrical insulator layer includes a silicon nitride layer so as to provide an interface between the first metal layer and the silicon nitride layer. The electro-optical device is configured to carry a plasmonic wave. | 03-06-2014 |
20140070347 | METHODS FOR PRODUCING CHALCOPYRITE COMPOUND THIN FILMS FOR SOLAR CELLS USING MULTI-STAGE PASTE COATING - Disclosed are methods for producing chalcopyrite compound (e.g., copper indium selenide (CIS), copper indium gallium selenide (CIGS), copper indium sulfide (CIS) or copper indium gallium sulfide (CIGS)) thin films. The methods are based on solution processes, such as printing, particularly, multi-stage coating of pastes or inks of precursors having different physical properties. Chalcopyrite compound thin films produced by the methods can be used as light-absorbing layers for thin-film solar cells. The use of the chalcopyrite compound thin films enables the fabrication of thin-film solar cells with improved efficiency at low costs. | 03-13-2014 |
20140077320 | Scribe Lines in Wafers - A wafer includes a plurality of chips arranged as rows and columns. A first plurality of scribe lines is between the rows of the plurality of chips. Each of the first plurality of scribe lines includes a metal-feature containing scribe line comprising metal features therein, and a metal-feature free scribe line parallel to, and adjoining, the metal-feature containing scribe line. A second plurality of scribe lines is between the columns of the plurality of chips. | 03-20-2014 |
20140077321 | PHOTOELECTRIC CONVERSION ELEMENT, METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, AND ELECTRONIC DEVICE - A method of manufacturing a photoelectric conversion element, which is provided with a substrate, a first electrode film having first and second conductive films provided on the substrate, a metal compound film covering the first electrode film, a semiconductor film connected with the metal compound film, a second electrode film connected with the semiconductor film, and an insulating film covering and surrounding the substrate, the first electrode film, the semiconductor film, and the metal compound film, the method including: forming the first conductive film to be connected with the substrate and the second conductive film to be connected with the first electrode film; forming the second conductive film in a predetermined shape using wet etching after the forming of the first and second conductive films, and forming the metal compound film which covers the first electrode film after the forming of the metal compound film. | 03-20-2014 |
20140091414 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a conductive member penetrating through a first semiconductor layer, a first insulator layer, and a third insulator layer, and connecting a first conductor layer with a second conductor layer. The conductive member has a first region containing copper, and a second region containing a material different from the copper is located at least between a first region and the first semiconductor layer, between the first region and the first insulator layer, and between the first region and the third insulator layer. A diffusion coefficient of the copper to a material is lower than a diffusion coefficient of the copper to the first semiconductor layer and a diffusion coefficient of the copper to the first insulator layer. | 04-03-2014 |
20140145281 | CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS - Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region | 05-29-2014 |
20140151832 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate, a light receiving element region, a peripheral region, a boundary region, a plurality of signal lines, and a conductive layer. In light receiving element region, light receiving elements for performing photoelectric conversion are formed. Peripheral region is formed outside light receiving element region for performing input/output of an electric signal from/to the outside of the semiconductor substrate. Boundary region is formed between light receiving element region and peripheral region. The plurality of signal lines are arranged in boundary region for performing input/output of electric signals between light receiving element region and peripheral region. Conductive layer is arranged in a layer different from each of the plurality of signal lines. A relative position of conductive layer as seen from each of the plurality of signal lines is all identical, and conductive layer is all arranged in an identical layer. | 06-05-2014 |
20140159180 | SEMICONDUCTOR RESISTOR STRUCTURE AND SEMICONDUCTOR PHOTOMULTIPLIER DEVICE - According to embodiments of the present invention, a semiconductor resistor structure is provided. The semiconductor resistor structure includes a substrate, a first region of a first conductivity type in the substrate, a second region of the first conductivity type in the substrate, the first region and the second region arranged one over the other, and an intermediate region of a second conductivity type in between the first region and the second region, wherein at least one gap is defined through the intermediate region and overlapping with the first region and the second region. According to further embodiments of the present invention, a semiconductor photomultiplier device is also provided. | 06-12-2014 |
20140159181 | GRAPHENE-NANOPARTICLE STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A graphene-nanoparticle structure includes a substrate, a graphene layer disposed on the substrate and a nanoparticle layer disposed on the graphene layer. The graphene-nanoparticle structure may be formed by alternately laminating the graphene layer and the nanoparticle layer and may play the role of a multifunctional film capable of realizing various functions according to the number of laminated layers and the selected material of the nanoparticles. | 06-12-2014 |
20140175585 | METHOD FOR MANUFACTURING LIGHT-RECEIVING DEVICE AND LIGHT-RECEIVING DEVICE - A method for manufacturing a light-receiving device includes the steps of forming a stacked semiconductor layer including a non-doped light-receiving layer, the light-receiving layer having an n-type conductivity; forming a selective growth mask made of an insulating film on the stacked semiconductor layer, the selective growth mask having a pattern including a plurality of openings; selectively growing a selective growth layer doped with a p-type impurity on a portion of the stacked semiconductor layer using the selective growth mask; and forming a p-n junction in a region of the light-receiving layer by diffusing the p-type impurity doped in the selective growth layer into the light-receiving layer during growing the selective growth layer. Each of the regions including the p-n junctions corresponds to one of the selective growth layers. The p-n junction in one of the regions is formed separately from the p-n junctions in the other regions. | 06-26-2014 |
20140191347 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a semiconductor substrate including a pixel area and a peripheral circuit area, an interconnection structure provided on a first principal surface of the semiconductor substrate and including first interconnection layers electrically connected to the peripheral circuit area, a second interconnection layer provided in the peripheral circuit area and on a second principal surface of the semiconductor substrate, a third interconnection layer provided above the second interconnection layer with an insulating layer therebetween, and through electrodes electrically connecting the second interconnection layer to the third interconnection layer. | 07-10-2014 |
20140191348 | INTEGRATED CIRCUIT AND MANUFACTURING METHOD - Disclosed is an integrated circuit comprising a substrate ( | 07-10-2014 |
20140197506 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes: an organic substrate; an integrated circuit and a chip part provided on the organic substrate; a molded section including a central portion and a peripheral portion, and forming, as a whole, a concave shape, the central portion sealing the integrated circuit and the chip part on the organic substrate, and the peripheral portion standing around the central portion; and a solid-state image pickup element provided on the central portion of the molded section, the solid-state image pickup element having a top edge that is lower in position in a thickness direction than a top edge of the peripheral portion of the molded section. | 07-17-2014 |
20140203386 | Shallow Junction Photodiode for Detecting Short Wavelength Light - The present invention is a photodiode or photodiode array having improved ruggedness for a shallow junction photodiode which is typically used in the detection of short wavelengths of light. In one embodiment, the photodiode has a relatively deep, lightly-doped P zone underneath a P+ layer. By moving the shallow junction to a deeper junction in a range of 2-5 μm below the photodiode surface, the improved device has improved ruggedness, is less prone to degradation, and has an improved linear current. | 07-24-2014 |
20140203387 | SEMICONDUCTOR CHIP PACKAGE AND METHOD FOR MANUFACTURING THEREOF - Disclosed herein is a semiconductor chip package, which includes a semiconductor chip, a plurality of vias, an isolation layer, a redistribution layer, and a packaging layer. The vias extend from the lower surface to the upper surface of the semiconductor chip. The vias include at least one first via and at least one second via. The isolation layer also extends from the lower surface to the upper surface of the semiconductor chip, and part of the isolation layer is disposed in the vias. The sidewall of the first via is totally covered by the isolation layer while the sidewall of the second via is partially covered by the isolation layer. The redistribution layer is disposed below the isolation layer and fills the plurality of vias, and the packaging layer is disposed below the isolation layer. | 07-24-2014 |
20140210027 | IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME - There is provided an image sensor module, including: an image sensor having a small thickness of 175 μm or less and having a first coefficient of thermal expansion; a substrate having the image sensor mounted thereon and having a second coefficient of thermal expansion higher than the first coefficient of thermal expansion; and an adhesive layer disposed between the image sensor and the substrate and including an adhesive having a third coefficient of thermal expansion of 130 ppm/° C. or more at a glass transition temperature Tg or more. | 07-31-2014 |
20140217535 | THIN FILM PHOTOVOLTAIC PANELS AND REPAIR METHODS - Conductive layer(s) in a thin film photovoltaic (TFPV) panel are divided by first scribe curves into photovoltaic cells connected in series. At least one of the layers is scribed to isolate a shunt defect in a cell from parts of that cell away from the defect. The isolation scribes can substantially follow or parallel current-flow lines established by the design of the panel. A TFPV panel can be altered by, using a controller, automatically locating a shunt defect and scribing at least one of the conductive layers along two spaced-apart second scribe curves. Each second scribe curve can intersect the two first scribe curves that bound the cell with the defect. The two second scribe curves can be on opposite sides of the defect. | 08-07-2014 |
20140231945 | TEMPERATURE-ADJUSTED SPECTROMETER - A temperature-adjusted spectrometer can include a light source and a temperature sensor. | 08-21-2014 |
20140246744 | METHOD OF MANUFACTURING RADIATION DETECTOR AND RADIATION DETECTOR - A graphite substrate is accommodated into a chamber where vacuum drawing is performed via a pump. Thereafter, carbon is heated under vacuum, whereby impurities in the carbon are evaporated causing the carbon to be purified. The carbon in the graphite substrate is purified, achieving suppression of the impurities as donor/acceptor elements and also metallic elements in the semiconductor layer of 0.1 ppm or less, the impurities being contained in the carbon in the graphite substrate. As a result, occurrence of leak current or an abnormal leak point enables to be suppressed, and thus abnormal crystal growth in the semiconductor layer enables to be suppressed. | 09-04-2014 |
20140246745 | CHIP SIZE PACKAGE (CSP) - A chip size package (CSP) includes an antenna for wireless communication, used in signal transmission and reception with external substrates, the antenna being formed as a wiring of a rewiring layer, the rewiring layer being disposed between a silicon layer and solder bumps. | 09-04-2014 |
20140264681 | POLARIZATION INSENSITIVE PHOTOCONDUCTIVE SWITCH - A photoconductive switch semiconductor device including a semiconductor substrate including a region functioning as a photoconductive switch; and a metallization layer disposed on the surface of the semiconductor substrate including a first component including a first terminal, and an inwardly spiraling first middle portion, and a first end portion, and a second component including a second terminal, and an inwardly spiraling second middle portion, and a second end portion, wherein the first component and the second component are electrically isolated. | 09-18-2014 |
20140264682 | Interconnect Sructure for Stacked Device and Method - A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element and a second semiconductor element bonded on the first semiconductor element. The first semiconductor element includes a first substrate, a common conductive feature in the first substrate, a first inter-level dielectric (ILD) layer, a first interconnection feature and a conductive plug connecting the first interconnection feature to the common conductive feature. The second semiconductor element includes a second substrate, a second ILD layers over the second substrate and a second interconnection feature in second ILD layers. The device also includes a conductive deep plug connecting to the common conductive feature in the first semiconductor element and the second interconnection feature. The conductive deep plug is separated with the conductive plug by the first ILD layer. | 09-18-2014 |
20140264683 | Imaging Sensor Structure and Method - The present disclosure provides an embodiment of a method for fabricating a three dimensional (3D) image sensor structure. The method includes providing to an image sensor substrate having image sensors formed therein and a first interconnect structure formed thereon, and a logic substrate having a logic circuit formed therein and a first interconnect structure formed thereon; bonding the logic substrate to the image sensor substrate in a configuration that the first and second interconnect structures are sandwiched between the logic substrate and the image sensor substrate; and forming a conductive feature extending from the logic substrate to the first interconnect structure, thereby electrically coupling the logic circuit to the image sensors. | 09-18-2014 |
20140264684 | PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH - A photoconductive semiconductor switch comprising a photoconductive GaAs substrate having a pair of spaced metal contacts on a surface thereof, the spaced metal contacts opposite ends of a switching gap, the switching gap having a plurality of lateral current flow preventing channels therein, the channels being formed by ion implantation of the GaAs substrate in the channels. | 09-18-2014 |
20140284744 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other. | 09-25-2014 |
20140306306 | PROTECTIVE INSULATING LAYER AND CHEMICAL MECHANICAL POLISHING FOR POLYCRYSTALLINE THIN FILM SOLAR CELLS - A method for forming a photovoltaic device includes forming an absorber layer with a granular structure on a conductive layer; conformally depositing an insulating protection layer over the absorber layer to fill in between grains of the absorber layer; and planarizing the protection layer and the absorber layer. A buffer layer is formed on the absorber layer, and a top transparent conductor layer is deposited over the buffer layer. | 10-16-2014 |
20140346627 | IMAGE PICKUP ELEMENT HOUSING PACKAGE, AND IMAGE PICKUP DEVICE - An imaging device accommodating package includes an insulating base body and an imaging device connecting pad. The insulating base body includes a lower surface, a through-hole and a bonding area on the bottom surface of the recess. The lower surface includes a recess. The through-hole is formed in a bottom surface of the recess in a perspective plan view. The bonding area is used for an imaging device. The imaging device connecting pad is formed on an upper surface of the insulating base body or on an inner surface of the through-hole. | 11-27-2014 |
20140374861 | EPITAXIAL WAFER AND MANUFACTURING METHOD THEREOF - A method for manufacturing an epitaxial wafer for manufacture of an image pickup device, wherein, before the growth of the epitaxial layer, a thickness X of a region where oxygen concentration in the epitaxial layer becomes 4×10 | 12-25-2014 |
20150008551 | SEMICONDUCTOR STRUCTURE, DEVICE COMPRISING SUCH A STRUCTURE, AND METHOD FOR PRODUCING A SEMICONDUCTOR STRUCTURE - A semi-conducting structure, configured to receive an electromagnetic radiation and to transform the electromagnetic radiation into an electric signal, including: a first zone and a second zone of a same conductivity type and of same elements; a barrier zone, provided between the first and second zones, for acting as a barrier to majority carriers of the first and second zones on a barrier thickness, the barrier zone having its lowest bandgap energy defining a barrier proportion; and a first interface zone configured to interface the first zone and the barrier zone on a first interface thickness, the first interface zone including a composition of elements which is varied from a proportion corresponding to that of the first material to the barrier proportion, the first interface thickness being at least equal to half the barrier thickness. | 01-08-2015 |
20150008552 | SEMICONDUCTOR PACKAGE - A wiring is located on a multilayer ceramic substrate. A ceramic block is located on the multilayer ceramic substrate. Electronic parts, including a semiconductor laser, are located on a surface of the ceramic block. A wiring located on the surface of the ceramic block connects some of the electronic parts to the wiring. A metallic cap with a glass window is located on the multilayer ceramic substrate. This metallic cap covers the ceramic block and the electronic parts, including the semiconductor laser. | 01-08-2015 |
20150028441 | SEMICONDUCTOR ELEMENT WITH SOLDER RESIST LAYER - A semiconductor element includes a CdTe-based semiconductor material and a number of connection points of the semiconductor element to connect to electronic components. In at least one embodiment, the connection points are provided with a special solder resist layer including a mixture AB of at least two metals with different coefficients of expansion. In at least one embodiment, a radiation detector includes such a semiconductor element and optionally includes evaluation electronics for reading out a detector signal. In at least one embodiment, a medical technology device includes such a radiation detector. Furthermore, a method is disclosed for creating a semiconductor element which includes applying a solder resist layer to connection points. In at least one embodiment, the solder resist layer includes a mixture of at least two metals with different coefficients of expansion. | 01-29-2015 |
20150048466 | IMAGE SENSOR AND FABRICATING METHOD OF IMAGE SENSOR - The present invention provides an image sensor and a fabricating method of the image sensor. The image sensor comprises: a first type epitaxial layer, a photodiode region, a first type well region, a gate region of a source follower transistor, and a first type implant isolation region. The first type well region is formed within the first type epitaxial layer with a first horizontal distance to the photodiode region and a vertical distance to a surface of the first type epitaxial layer. The gate region of a source follower transistor is formed on the surface of the first type epitaxial layer and above the first type well region, and has a second horizontal distance to the photodiode region. There is a distance between the first type implant isolation region and the first type well region as an anti-blooming path. | 02-19-2015 |
20150061060 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device provided with an interlayer insulating film formed on a semiconductor substrate, and a plurality of wiring layers formed on the interlayer insulating film. The method includes forming of a first wiring layer closest to the semiconductor substrate among the plurality of wiring layers, and forming of an alloy of a titanium layer and a metal layer by heating treatment. The forming of the first wiring layer includes: forming of a titanium layer on an interlayer insulating film; forming of a metal layer containing a metal capable of forming an alloy with titanium in the titanium layer; forming of an orientation layer on the metal layer; and forming of an aluminum layer on the orientation layer. | 03-05-2015 |
20150091114 | Elemental Stacked Image Sensor - Provided herein is a novel stacked pixel design for image sensor applications. The stacked pixel designs may comprise a first and second wafer, wherein the first wafer is an elemental wafer comprising a photodiode and minimal additional components, such that material selection and processing steps of the first wafer may be optimized for the creation of a high quality photodiode. The second wafer comprises components necessary for the readout and reset of the photodiode on the first wafer. | 04-02-2015 |
20150108595 | SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE - The present invention relates to a solid-state imaging device. In a pixel array section in the solid-state imaging device, a vertical signal line is provided right under power supply wiring apart from a floating diffusion region in order to reduce load capacitance of the vertical signal line. Furthermore, the power supply wiring is wired to make a cover rate of each vertical signal line with respect to the power supply wiring nearly uniform. As a result, it is possible to suppress variation of load capacitance of the vertical signal line for each pixel. It becomes possible to suppress deviation in a black level, variation of charge transfer, and variation of settling. It becomes possible to obtain an image with higher quality. | 04-23-2015 |
20150137294 | IMAGE SENSOR PACKAGE STRUCTURE AND METHOD - Image sensor package structure and method are provided. The method includes: providing first substrate having upper surface on which image sensing areas and pads are formed; providing second substrate having through holes; forming tape film on upper surface of second substrate to seal each through hole; contacting lower surface of second substrate with upper surface of first substrate to make image sensing areas in through holes; removing portions of tape film and second substrate, wherein remained tape film and second substrate form cavities including sidewalls made of second substrate and caps sealing sidewalls and made of tape film, and remained second substrate also covers pads; removing portions of remained second substrate to expose pads; slicing first substrate to form single image sensor chips including image sensing areas and pads; and electrically connecting pads with circuits on third substrate through wires. Pollution or damage to image sensing areas may be avoided. | 05-21-2015 |
20150380579 | LIGHT RECEIVING DEVICE INCLUDING TRANSPARENT ELECTRODE AND METHOD OF MANUFACTURING LIGHT RECEIVING DEVICE - Provided is a light receiving device including a transparent electrode and a method of manufacturing the light receiving device. A transparent electrode is formed so as to be in contact with a photoelectric conversion layer which absorbs light to generate electric energy, and the transparent electrode is formed by using a resistance change material which has high transmittance with respect to light in the entire wavelength range and of which resistance state is to be changed from a high resistance state into a low resistance state if a voltage exceeding a threshold voltage inherent in the resistance change material so that conducting filaments are formed in the transparent electrode. Accordingly, since the transparent electrode has high transmittance characteristic with respect to the light in the entire wavelength range and high conductivity characteristic, the light receiving device also has high photoelectric conversion efficiency and good electric characteristics. | 12-31-2015 |
20160005744 | ULTRAVIOLET-ERASABLE NONVOLATILE SEMICONDUCTOR DEVICE - In order to provide an ultraviolet-erasable nonvolatile semiconductor device that has a high water resistance and is capable of erasing data by ultraviolet rays, a protective film includes a silicon nitride film ( | 01-07-2016 |
20160104805 | OPTICAL SEMICONDUCTOR DEVICE INCLUDING BLACKENED TARNISHABLE BOND WIRES AND RELATED METHODS - A method for making an optical semiconductor device may include forming an integrated circuit (IC) including an optical sensing area and a bond pads outside the optical sensing area, and coupling proximal ends of respective bond wires to corresponding bond pads. The method may further include performing a blackening treatment on the bond wires. | 04-14-2016 |
20190148448 | IMAGE SENSOR | 05-16-2019 |
20220139975 | SOLID-STATE IMAGE PICKUP APPARATUS AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC EQUIPMENT - A solid-state image pickup apparatus includes: a first structure having a first substrate, and a pixel region including a plurality of pixels which is formed in the first substrate, outputs pixel signals according to amounts of electric charges generated by photoelectric conversion, and is arrayed in a two-dimensional grid, and a second structure that is stacked on the first structure, and has a second substrate, and a logic circuit and a non-volatile memory that are formed in the second substrate, in which a first protective film having a property of inhibiting entrance of hydrogen is formed on an end surface of a storage element included in the non-volatile memory which end surface is on a side facing the first structure, and a second protective film having the property of inhibiting entrance of hydrogen is formed on a side surface of the storage element. | 05-05-2022 |