Entries |
Document | Title | Date |
20090001498 | Nanowire photodiodes and methods of making nanowire photodiodes - Nanowire-based photodiodes are disclosed. The photodiodes include a first optical waveguide having a tapered first end, a second optical waveguide having a tapered second end, and at least one nanowire comprising at least one semiconductor material connecting the first and second ends in a bridging configuration. Methods of making the photodiodes are also disclosed. | 01-01-2009 |
20090050998 | SEMICONDUCTOR DEVICE - In one embodiment of the present invention, a semiconductor device has a photodiode over a P-type substrate, an NPN transistor formed over the P-type substrate, an N | 02-26-2009 |
20090057805 | Ultraviolet sensor - The ultraviolet sensor has a ZnO layer composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer which is provided in contact with the ZnO layer and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode electrically connected to the ZnO layer, and a second terminal electrode electrically connected to the (Ni,Zn)O layer. The ZnO layer is disposed at an ultraviolet ray receiving side. The (Ni,Zn)O layer is preferably formed of a sintered body. | 03-05-2009 |
20090065887 | Image Sensor and Method for Manufacturing the Same - Provided is an image sensor and a method for manufacturing the same. In the image sensor, a first substrate has a lower metal line and circuitry thereon. A crystalline semiconductor layer contacts the lower metal line and is bonded to the first substrate. A photodiode is provided in the crystalline semiconductor layer and electrically connected with the lower metal line. A pixel isolation layer is formed in regions of the photodiode. | 03-12-2009 |
20090115015 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes defining an active region in a substrate by forming a device isolating layer; and then sequentially forming a photodiode and a logic unit in the active region; and then forming a first passivation layer on the photodiode and the logic unit; and then forming a trench in the first passivation layer by selectively removing a portion of the first protective layer corresponding to an uppermost surface of the photodiode; and then forming a second passivation layer buried in the trench. Forming a thick second passivation layer in the trench which spatially corresponds to the photodiode can offset dangling bonds on the surface of the substrate in a subsequent annealing process while also reducing dark current and enhance photosensitivity of the photodiode. | 05-07-2009 |
20090134487 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a first substrate, a lower metal line, a circuitry, a first insulating layer, a crystalline semiconductor layer, a photodiode, and a contact line. The lower metal line and the circuitry are formed on and/or over the first substrate and the first insulating layer is formed on and/or over the lower metal line. The crystalline semiconductor layer contacts the first insulating layer and is bonded to the first substrate. The photodiode is formed in the crystalline semiconductor layer. The contact line electrically connects the photodiode to the lower metal line. | 05-28-2009 |
20090140366 | Photodiode with Controlled Current Leakage - The present invention is directed towards radiation detectors and methods of detecting incident radiation. In particular the present invention is directed towards photodiodes with controlled current leakage detector structures and a method of manufacturing photodiodes with controlled current leakage detector structures. The photodiodes of the present invention are advantageous in that they have special structures to substantially reduce detection of stray light. Additionally, the present invention gives special emphasis to the design, fabrication, and use of photodiodes with controlled leakage current. | 06-04-2009 |
20090152665 | FABRICATING METHODS OF PHOTOELECTRIC DEVICES AND PACKAGE STRUCTURES THEREOF - The invention discloses a method for fabricating a photoelectric device. A ceramic substrate is first provided, and then a first patterned electrode and a second patterned electrode are formed on and underneath the surface of the ceramic substrate. A plurality of photoelectric devices is sequentially connected to the first electrode layer with a wire solder or a eutectic joint method. The encapsulation materials cover the each photoelectric die to prevent damaged from the external force or environment. Cutting the ceramic substrate along the spaces between the photoelectric dies forms a plurality of independent package units. | 06-18-2009 |
20090166790 | Image Sensor and Method for Manufacturing the Same - An image sensor may comprise circuitry, a first lower electrode, a photodiode, an upper electrode, a second lower electrode, and an upper interconnection. The circuitry may comprise a first lower interconnection and a second lower interconnection over a dielectric of a substrate. The first lower electrode, the photodiode, and the upper electrode may be sequentially formed over the first lower interconnection. The second lower electrode may comprise a passivation layer over the second lower interconnection. The upper interconnection may be formed over the second lower electrode and electrically connected to the upper electrode. | 07-02-2009 |
20090166791 | METHOD FOR MANUFACTURING IMAGE SENSOR - Embodiments relate to an image sensor and a method for manufacturing an image sensor. According to embodiments, an interlayer insulating layer including a metal line may be formed on and/or over a semiconductor substrate. A lower electrode layer connected with the metal line may be formed on and/or over the interlayer insulating layer. A photoresist pattern may be formed on and/or over the lower electrode layer and may form lower electrodes separated from each other. The photoresist pattern may be removed. A polymer with Cl group that may be generated when removing the photoresist pattern may be removed. According to embodiments, by removing the polymer, photons that may be generated in a photo diode may be more easily gathered, which may enhance an image quality of an image sensor. | 07-02-2009 |
20090174024 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Embodiments relate to an image sensor and a method of manufacturing the same. According to embodiments, an image sensor may include a first substrate having circuitry formed thereon. It may further include a photodiode bonded to the first substrate and electrically connected to the circuitry, and a contact plug at a pixel border that may be electrically connected with the circuitry and the photodiode. According to embodiments, the photodiode may include a first conductive type ion implantation region selectively provided in a crystalline semiconductor layer, and a second conductive type ion implantation region in contact with one side surface of the first conductive type ion implantation region. | 07-09-2009 |
20090194836 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor includes a semiconductor substrate including circuitry, an interlayer dielectric including metal lines arranged on the semiconductor substrate, crystalline photodiode patterns arranged on the interlayer dielectric such that the photodiode patterns are connected to the metal lines, hard mask patterns arranged on the respective photodiode patterns, a device-isolation trench interposed between the adjacent photodiode patterns, to isolate the photodiode patterns from each other, a barrier film implanted with impurity ions, arranged into the inner wall of the device-isolation trench, and a device-isolation insulating layer arranged over the interlayer dielectric including the photodiode pattern and the device-isolation trench. | 08-06-2009 |
20090230498 | OPTICAL SEMICONDUCTOR DEVICE - An optical semiconductor device includes a semiconductor substrate; a light receiving element formed on the semiconductor substrate; a light absorbing element formed on the semiconductor substrate and located adjacent to the light receiving element; and a semiconductor element formed on the semiconductor substrate and used for signal processing. The light absorbing element includes a fifth semiconductor layer, and a light absorption region in the light receiving element has a different structure from a light absorption region in the light absorbing element. | 09-17-2009 |
20090243025 | PIXEL STRUCTURE WITH A PHOTODETECTOR HAVING AN EXTENDED DEPLETION DEPTH - An image sensor includes an imaging area that includes a plurality of pixels that are formed in a substrate layer of a first conductivity type. Each pixel includes a collection region that is formed in a portion of the substrate layer and doped with a dopant of a first conductivity type. A plurality of wells are disposed in portions of the substrate layer and doped with another dopant of the second conductivity type. Each well is positioned laterally adjacent to each collection region. A buried layer spans the imaging area and is disposed in a portion of the substrate layer that is beneath the photodetectors and the wells. The buried layer is doped with a dopant of a second conductivity type. Each collection region, each well, and the buried layer are formed such that a region of the substrate layer having substantially the same doping as the substrate layer resides between each collection region and the buried layer. | 10-01-2009 |
20090321869 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A semiconductor device has a structure including the first semiconductor region | 12-31-2009 |
20100006971 | IMAGE PICKUP DEVICE AND CAMERA - An object is to provide a solid state image pickup device and a camera which do not worsen a sensor performance in terms of an optical property, a saturated charge amount and the like. A solid state image sensor including a pixel region having a plurality of pixels includes at least a photodiode and an amplifying portion amplifying photocharges outputted from the photodiode in the pixel region, and further includes a well electrode for taking well potential of a well region in which the amplifying portion is arranged. Between the well electrode and the photodiode, no element isolation regions by an insulation film are arranged. Moreover, on the surface of a first semiconductor region in which the photodiode stores the charges, a second semiconductor layer of a conductivity type reverse to that of the first semiconductor region is arranged. | 01-14-2010 |
20100025801 | Image Sensor and Method for Manufacturing the Same - An image sensor includes readout circuitry on a first substrate, a metal line electrically connected with the readout circuitry, a dielectric on the metal line, an image sensing device on the dielectric, including first and second conductivity type layers, a contact plug in a via hole penetrating the image sensing device to connect the first conductivity type layer with the metal line, and a sidewall dielectric in the via hole at a sidewall of the second conductivity type layer. | 02-04-2010 |
20100025802 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - An image sensor is provided. The image sensor comprises a readout circuitry, interconnections, a first image sensing device, and a second image sensing device. The readout circuitry is disposed on a first substrate. The interconnections comprise a first interconnection and a second interconnection on the first substrate to be electrically connected to the readout circuitry. The first image sensing device is disposed over the first interconnection. The second image sensing device is disposed over the first image sensing device and electrically connected to the second interconnection. | 02-04-2010 |
20100025803 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. According to an embodiment, a semiconductor substrate is provided comprising a readout circuit. An interconnection electrically connected to the readout circuit and an interlayer dielectric are disposed over the semiconductor substrate. An image sensing unit is disposed over the interlayer dielectric and comprises a first doping layer and a second doping layer stacked therein. A first via hole is formed, exposing the interconnection through the image sensing unit. A fourth metal contact is formed in the first via hole to electrically connect the interconnection and the first doping layer. A fifth metal contact is formed over the fourth metal contact, the fifth metal contact being electrically insulated from the fourth metal contact and electrically connected to the second doping layer. | 02-04-2010 |
20100032787 | Illumination intensity sensor and fabricating method thereof - There is provided an illumination intensity sensor including a first photodiode; a second photodiode; an insulating film, the insulating film including a first insulating film portion above the first photodiode of a first film thickness and a second insulating film portion above the second photodiode of a second film thickness that is thicker than the first film thickness; first and second electrodes penetrating the first insulating film portion and electrically connected to the first and second conduction type diffusion region of the first photodiode, respectively; a second electrode penetrating the first insulating film portion and electrically connected to the second conduction type diffusion region of the first photodiode; and third and fourth electrodes penetrating the second insulating film portion and electrically connected to the first conduction type diffusion region of the second photodiode, respectively. | 02-11-2010 |
20100084731 | IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is formed in the substrate adjacent to a sidewall of the trench. | 04-08-2010 |
20100102412 | GERMANIUM PHOTODETECTOR AND METHOD OF FABRICATING THE SAME - Provided is a germanium photodetector having a germanium epitaxial layer formed without using a buffer layer and a method of fabricating the same. In the method, an amorphous germanium layer is formed on a substrate. The amorphous germanium layer is heated up to a high temperature to form a crystallized germanium layer. A germanium epitaxial layer is formed on the crystallized germanium layer. | 04-29-2010 |
20100109116 | PHOTOELECTRIC CONVERSION FILM, PHOTOELECTRIC CONVERSION DEVICE AND COLOR IMAGE SENSOR HAVING THE PHOTOELECTRIC CONVERSION DEVICE - A blue color photoelectric conversion film includes: a p-type layer formed by depositing tetracene; a p,n-type layer formed by co-depositing tetracene and naphthalene-tetracarboxylic-dianhydride (“NTCDA”) on the p-type layer; and an n-type layer formed by depositing NTCDA on the p,n-type layer. | 05-06-2010 |
20100109117 | IMAGE SENSOR PHOTODIODES USING A MULTI-LAYER SUBSTRATE AND CONTACT METHOD AND STRUCTURE THEREOF - The present invention relates to a photodiode of an image sensor using a three-dimensional multi-layer substrate, and more particularly, to a method of implementing a buried type photodiode and a structure thereof, and a trench contact method for connecting a photodiode in a multi-layer substrate and a transistor for signal detection. | 05-06-2010 |
20100117184 | METHOD OF MANUFACTURING IMAGE SENSOR - A method of manufacturing an image sensor and an image sensor. A method of manufacturing an image sensor may include forming an interlayer dielectric including a metal line on and/or over a semiconductor substrate, forming an image sensing part on and/or over an interlayer dielectric, and/or forming a hard mask in which an opening corresponding to a metal line may be defined on and/or over an image sensing part. A method of manufacturing an image sensor may include performing an etch process to form an auxiliary via hole exposing an inside of an image sensing part, and/or forming a spacer within a auxiliary via hole by an etch byproduct of a hard mask. A method of manufacturing an image sensor may include performing an etch process including a chemical to remove a spacer, and/or etching an image sensing part and/or an interlayer dielectric to form a deep via hole. | 05-13-2010 |
20100133643 | IMAGE SENSOR PIXEL AND METHOD THEREOF - A method of manufacturing a pixel of an image sensor including a protruded photodiode capable of improving photosensitivity and reducing crosstalk between neighboring pixels and a pixel of an image sensor formed using the method are provided. The pixel of the semiconductor image sensor includes a protrudedly shaped photodiode on a surface of a semiconductor substrate. A surface area of the photodiode with respect to a surface area of the image sensor pixel increases to improve photosensitivity, and a microlens is not needed due to the improvement of the fill factor. In addition, the crosstalk of neighboring pixels can be removed. | 06-03-2010 |
20100155874 | Front Side Illuminated, Back-Side Contact Double-Sided PN-Junction Photodiode Arrays - The present invention is a photodiode detector array for use in computerized tomography (CT) and non-CT applications. Specifically, the present invention is a high-density photodiode arrays, with low dark current, low capacitance, high signal to noise ratio, high speed, and low crosstalk that can be fabricated on relatively large substrate wafers. More specifically the photodiode array of the present invention is fabricated such that the PN-junctions are located on both the front side and back side surfaces of the array, and wherein the front side PN-junction is in electrical communication with the back side PN-junction. Still more specifically, the present invention is a photodiode array awing PN-junctions that are electrically connected from the front to back surfaces and which can be operated in a fully depleted mode at low reverse bias. | 06-24-2010 |
20100164049 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are an image sensor and a method for manufacturing the same. The image sensor comprises an active region including a photodiode region, a transistor region, and an active pattern; a photodiode; and a plurality of transistors. The active region is formed on a substrate. The active region is defined by a device isolation region. The photodiode region and the transistor region are formed in the active region. The photodiode is formed in the photodiode region. The plurality of transistors is formed on the transistor region. The active pattern connects the photodiode region to the transistor region at a second location. | 07-01-2010 |
20100193893 | Photodiode With Integrated Semiconductor Circuit and Method for the Production Thereof - A semiconductor circuit in a semiconductor body and a wafer bonding method for connecting the semiconductor circuit to another substrate, in which a diode is realized in a laminar structure. The semiconductor circuit is connected to the terminals of the diode by means of that extend through the semiconductor body. | 08-05-2010 |
20100207231 | SOLID-STATE IMAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - Photoelectric conversion regions ( | 08-19-2010 |
20100219497 | PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF - The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region. | 09-02-2010 |
20100276778 | Image sensor - A buried oxide is provided in a substrate of a photodiode so as to be opposed to a cathode and is in contact with a lower end of a depletion layer. The buried oxide is polarized owing to charges forming the depletion layer and thus works as a capacitor. A capacitor formed in the depletion layer and the additional capacitor made by the buried oxide are, therefore, connected in series, which reduces a total junction capacitance Cs. Increase in photo-detection voltage Vs results in according to an equation, Vs=Qp/Ct, since an amount of photocharge Qp is constant. The increase in the photo-detection voltage Vs allows an improvement in the SN ratio of the photodiode. Further, easy formation of the buried oxide, for example, by implanting oxygen ions, permits low-cost manufacturing of the photodiode. | 11-04-2010 |
20100289105 | Edge Illuminated Photodiodes - This invention comprises plurality of edge illuminated photodiodes. More specifically, the photodiodes of the present invention comprise novel structures designed to minimize reductions in responsivity due to edge surface recombination and improve quantum efficiency. The novel structures include, but are not limited to, angled facets, textured surface regions, and appropriately doped edge regions. | 11-18-2010 |
20100289106 | PHOTODIODE WITH INTERFACIAL CHARGE CONTROL AND ASSOCIATED PROCESS - A photodiode includes a first doped layer and a second doped layer that share a common face. A deep isolation trench has a face contiguous with the first and second doped layers. A conducting layer is in contact with a free face of the second doped layer. A protective layer is provided at an interface with the first doped layer and second doped layer. This protective layer is capable of generating a layer of negative charge at the interface. The protective layer may further be positioned within the second doped layer to form an intermediate protective structure. | 11-18-2010 |
20110012222 | METHOD OF MAKING LIGHT TRAPPING CRYSTALLINE STRUCTURES - A method of making a crystalline semiconductor structure provides a photonic device by employing low thermal budget annealing process. The method includes annealing a non-single crystal semiconductor film formed on a substrate to form a polycrystalline layer that includes a transition region adjacent to a surface of the film and a relatively thicker columnar region between the transition region and the substrate. The transition region includes small grains with random grain boundaries. The columnar region includes relatively larger columnar grains with substantially parallel grain boundaries that are substantially perpendicular to the substrate. The method further includes etching the surface to expose the columnar region having an irregular serrated surface. | 01-20-2011 |
20110062542 | STRUCTURES, DESIGN STRUCTURES AND METHODS OF FABRICATING GLOBAL SHUTTER PIXEL SENSOR CELLS - Pixel sensor cells, method of fabricating pixel sensor cells and design structure for pixel sensor cells. The pixel sensor cells including: a photodiode body in a first region of a semiconductor layer; a floating diffusion node in a second region of the semiconductor layer, a third region of the semiconductor layer between and abutting the first and second regions; and dielectric isolation in the semiconductor layer, the dielectric isolation surrounding the first, second and third regions, the dielectric isolation abutting the first, second and third regions and the photodiode body, the dielectric isolation not abutting the floating diffusion node, portions of the second region intervening between the dielectric isolation and the floating diffusion node. | 03-17-2011 |
20110062543 | SEMICONDUCTOR DEVICE - The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected. | 03-17-2011 |
20110068430 | IMAGE SENSOR WITH INTER-PIXEL ISOLATION - An image sensor with a plurality of photodiodes arranged in an array. A barrier region is disposed between adjacent photodiodes and inhibits depletion region merger between adjacent photodiodes, thereby inhibiting a capacitive coupling between the adjacent photodiodes. | 03-24-2011 |
20110127630 | IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is fanned in the substrate adjacent to a sidewall of the trench. | 06-02-2011 |
20110221026 | PHOTOVOLTAIC DEVICE INCLUDING A SUBSTRATE OR A FLEXIBLE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - Disclosed is a photovoltaic device. The photovoltaic device of the present invention includes: a first electrode and a second electrode, which are sequentially placed on a substrate; a first photoelectric conversion layer being placed between the first electrode and the second electrode, and including an n-type semiconductor layer, an intrinsic semiconductor layer and a p-type semiconductor layer, which are sequentially stacked; a second photoelectric conversion layer being placed between the first photoelectric conversion layer and the second electrode, and including an n-type semiconductor layer, an intrinsic semiconductor layer and a p-type semiconductor layer, which are sequentially stacked; and light transmitting particles placed within the second electrode. | 09-15-2011 |
20110254117 | Electrical Devices Including Dendritic Metal Electrodes - The present invention relates generally to electrical devices. The present invention relates more particularly to electrical devices including dendritic metal electrodes. One aspect of the present invention is an electrical device comprising a first electrode comprising at least one dendritic metal structure; a second electrode; and an electrically active structure disposed between the dendritic metal structure and the second electrode. | 10-20-2011 |
20110291220 | SOLID-STATE IMAGING DEVICE - According to one embodiment, a solid-state imaging device includes a first diffusion layer for accumulating carriers generated by a photoelectric effect; a second diffusion layer adjoining the first diffusion layer, the second diffusion layer having a polarity opposite to that of the first diffusion layer; and a reference voltage setting unit that applies a changing voltage that temporally changes to the first diffusion layer through the second diffusion layer and sets a voltage based on an amplitude of the applied changing voltage as a reference voltage of the first diffusion layer. | 12-01-2011 |
20110291221 | SEMICONDUCTOR LIGHT RECEIVING DEVICE - A semiconductor light receiving device includes: a substrate having a rectangular shape with first through fourth corners, a multilayer structure formed on the substrate, a light receiving part having a mesa structure positioned at a first corner side from a center part of the rectangular shape of the substrate, a first electrode pad provided on the semiconductor substrate, and a second electrode pad provided on the semiconductor substrate so as to be close to a second corner diagonally opposite to the first corner, a first minimum distance between the second electrode pad and an edge of the substrate being longer than a second minimum distance between the first electrode pad and the edge of the substrate. | 12-01-2011 |
20120043637 | IMAGE SENSOR COMPRISING ISOLATED GERMANIUM PHOTODETECTORS INTEGRATED WITH A SILICON SUBSTRATE AND SILICON CIRCUITRY - In accordance with the invention, an improved image sensor comprises an array of germanium photosensitive elements integrated with a silicon substrate and integrated with silicon readout circuits. The silicon transistors are formed first on a silicon substrate, using well known silicon wafer fabrication techniques. The germanium elements are subsequently formed overlying the silicon by epitaxial growth. The germanium elements are advantageously grown within surface openings of a dielectric cladding. Wafer fabrication techniques are applied to the elements to form isolated germanium photodiodes. Since temperatures needed for germanium processing are lower than those for silicon processing, the formation of the germanium devices need not affect the previously formed silicon devices. Insulating and metallic layers are then deposited and patterned to interconnect the silicon devices and to connect the germanium devices to the silicon circuits. The germanium elements are thus integrated to the silicon by epitaxial growth and integrated to the silicon circuitry by common metal layers. | 02-23-2012 |
20120126357 | LIGHT DETECTION DEVICES AND METHODS OF MANUFACTURING THE SAME - Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively. | 05-24-2012 |
20120139074 | ELECTRONIC APPARATUS - Disclosed is an electronic apparatus in which a thermoelectric conversion element and at least one of a photoelectric conversion element and a transistor or a diode are monolithically integrated, or which prevents interference between a p-type thermoelectric conversion unit and an n-type thermoelectric conversion unit. This electronic apparatus includes a thermoelectric conversion element ( | 06-07-2012 |
20120193745 | SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region. | 08-02-2012 |
20120199935 | OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses an optoelectronic device and method of fabricating the same. The optoelectronic device according to the invention includes a semiconductor structure combination, a first surface passivation layer formed on an upper surface of the semiconductor structure combination, and a second surface passivation layer formed on the first surface passivation layer. The semiconductor structure combination includes at least one P-N junction. In particular, the interfacial state density of the first surface passivation layer is lower than that of the second surface passivation layer, and the fixed oxide charge density of the second surface passivation layer is higher than that of the first surface passivation layer. | 08-09-2012 |
20120326260 | PHOTODIODE THAT INCORPORATES A CHARGE BALANCED SET OF ALTERNATING N AND P DOPED SEMICONDUCTOR REGIONS - A photodiode comprises a first terminal formed in a surface of a semiconductor substrate; a second terminal formed in the substrate surface and spaced apart from the first terminal; and a plurality of adjacent alternating N-type and P-type diffusion regions formed in the substrate surface between the first terminal and the second terminal. | 12-27-2012 |
20130075852 | Highly-Depleted Laser Doped Semiconductor Volume - A device with increased photo-sensitivity using laser treated semiconductor as detection material is disclosed. In some embodiments, the laser treated semiconductor may be placed between and an n-type and a p-type contact or two Schottky metals. The field within the p-n junction or the Schottky metal junction may aid in depleting the laser treated semiconductor section and may be capable of separating electron hole pairs. Multiple device configurations are presented, including lateral and vertical configurations. | 03-28-2013 |
20130175653 | SENSING PRODUCT AND METHOD OF MAKING - This description relates to a sensing product formed using a substrate with a plurality of epi-layers. At least a first epi-layer has a different composition than the composition of a second epi-layer. The sensing product optionally includes at least one radiation sensing element in the second epi-layer and optionally an interconnect structure over the second epi-layer. The sensing product is formed by removing the substrate and all epi-layers other than the second epi-layer. A light incident surface of the second epi-layer has a total thickness variation of less than about 0.15 μm. | 07-11-2013 |
20130241024 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device | 09-19-2013 |
20130277790 | Dual Profile Shallow Trench Isolation Apparatus and System - The presented principles describe an apparatus and method of making the same, the apparatus being a semiconductor circuit device, having shallow trench isolation features bounding an active area and a periphery area on a semiconductor substrate to electrically isolate structures in the active area from structures in the periphery area. The shallow trench isolation feature bounding the active area is shallower than the shallow trench isolation feature bounding the periphery area, with the periphery area shallow trench isolation structure being formed through two or more etching steps. | 10-24-2013 |
20140070354 | MANUFACTURE OF N-TYPE CHALCOGENIDE COMPOSITIONS AND THEIR USES IN PHOTOVOLTAIC DEVICES - A layer of an n-type chalcogenide compositions provided on a substrate in the presence of an oxidizing gas in an amount sufficient to provide a resistivity to the layer that is less than the resistivity a layer deposited under identical conditions but in the substantial absence of oxygen. | 03-13-2014 |
20140231951 | SILICON PHOTOMULTIPLIER AND METHOD OF MANUFACTURING SILICON PHOTOMULTIPLIER - Provided is a structure of a silicon photomultiplier including an insulating layer to isolate pixels in the silicon photomultiplier and a quench resistor formed on the insulating layer to maximize the size of a light-receiving area, and a method of manufacturing the silicon photomultiplier. | 08-21-2014 |
20140327102 | NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT - An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. The first polarity charge layer is disposed between a first one of a plurality of passivation layers and a second one of the plurality of passivation layers disposed over the photodiode region. | 11-06-2014 |
20150084151 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD OF MANUFACTURING THE SAME - A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode. | 03-26-2015 |
20150365043 | BOWTIE NANOANTENNAS FOR EFFICIENT THERMOPHOTOVOLTAICS AND ENHANCED SENSITIVITY IR PHOTODETECTORS - A matching technique and the field enhancement at the terminals of a bowtie nanoantenna is presented to develop compact, highly efficient, and flexible thermophotovoltaic (TPV) cells. The bowtie antenna is designed for maximum power transfer to a near infrared band of a TPV cell. In one example, a small cube of indium gallium arsenside antimode or another suitable material with a low bandgap energy of 0.52 eV is mounted at the terminals of the antenna. Such a load presents a frequency dependent impedance with a high resistance and capacitance at the desired frequency (180 THz). For maximum power transfer, a high impedance bowtie antenna operating at the anti-resonance mode connected to an inductive transmission line to compensate for the load capacitance is realized. The same antenna and load configuration with the semiconductor material used in photoconductive mode is used to realize a sensitive uncooled photodetector. | 12-17-2015 |
20160087139 | MATERIALS, FABRICATION EQUIPMENT, AND METHODS FOR STABLE, SENSITIVE PHOTODETECTORS AND IMAGE SENSORS MADE THEREFROM - Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s. | 03-24-2016 |
20160104812 | INTEGRATED PHOTODIODE FOR SEMICONDUCTOR SUBSTRATES - A substrate section that is at least partially fabricated to include contact elements and materials. The substrate section includes doped regions that have a heavily doped N-type region and a heavily doped P-type region adjacent to one another. An exterior surface of the substrate has a topography that includes a light-transparent region in which light, from a light source, is able to reach a surface of the substrate. An application of light onto the light-transparent region is sufficient to cause a voltage potential to form across a junction of the heavily doped regions. The substrate section may further comprise one or more electrical contacts, positioned on the substrate section to conduct current, resulting from the voltage potential created with application of light onto the light-transparent region, to a circuit on the semiconductor substrate. | 04-14-2016 |
20160149070 | LIGHT-RECEIVING ELEMENT AND PRODUCTION METHOD THEREFOR - A light-receiving element includes a semiconductor layer with a pn junction part and a pair of electrodes that interpose the pn junction part. Near field light is generated in the vicinity of the pn junction part by applying a forward bias voltage between the pair of electrodes and irradiating the pn junction with light that has a specific wavelength, and an electrode of the irradiated pair of electrodes is configured with a wire grid polarizer that transmits the light that has the specific wavelength. | 05-26-2016 |