| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 257441000 | Narrow band gap semiconductor ( | 12 |
| 20090072338 | SEMICONDUCTOR PHOTODETECTOR AND MANUFACTURING METHOD THEREFOR - A method for manufacturing a semiconductor photodetector includes: forming an insulating film on a semiconductor substrate; forming an electrode on and in contact with a predetermined area of a surface of the semiconductor substrate; forming a resist on the insulating film after forming the electrode; forming a power supply layer of a metal on the resist and the electrode; plating a surface of a portion of the power supply layer with a metal coating, after forming the power supply layer, the portion overlying and being in contact with the electrode; after the plating, etching and removing a part of the power supply layer leaving a portion that is covered with the metal coating and is an extension of the electrode; and removing the resist after etching the power supply layer. | 03-19-2009 |
| 20090256231 | UNIPOLAR SEMICONDUCTOR PHOTODETECTOR WITH SUPPRESSED DARK CURRENT AND METHOD FOR PRODUCING THE SAME - A photo-detector with a reduced G-R noise comprises two n-type narrow bandgap layers surrounding a middle barrier layer having an energy bandgap at least equal to the sum of the bandgaps of the two narrow bandgap layers. Under the flat band conditions the conduction band edge of each narrow bandgap layer lies below the conduction band edge of the barrier layer by at least the bandgap energy of the other narrow bandgap layer. When biased with an externally applied voltage, the more negatively biased narrow bandgap layer is the contact layer and the more positively biased narrow bandgap layer is the photon absorbing layer. Under external bias conditions the bands in the photon absorbing layer next to the barrier layer are flat or accumulated, and the flat part of the valence band edge in the photon absorbing layer lies below the flat part of the valence band edge of the contact layer and has an energy of not more than 10kTop above the valence band edge in any part of the barrier layer (k=Boltzman constant and Top=operating temperature). | 10-15-2009 |
| 20100224950 | APPARATUS AND METHOD USING PATTERNED ARRAY WITH SEPARATED ISLANDS - Aspects of the disclosure are directed to an apparatus that is used to provide a circuit layer via a supportive substrate or material layer having an upper surface and having edge surfaces configured and arranged to define patterned aperture channels. The material layer includes an array of patterned islands which provide an upper surface of the material layer for securing and supporting circuitry. The patterned islands are flexible due, for example, to patterned flexures located between and connecting the islands. | 09-09-2010 |
| 20140252529 | Pb-salt Mid-infrared Detectors and Method for Making Same - The disclosure describes methods for preparing lead salt materials which are sensitive to the mid-infrared spectrum which can be used to manufacture high-uniformity, high-detectivity, polycrystalline lead salt photoconductive and photovoltaic photodetectors. | 09-11-2014 |
| 20160111567 | Photovoltaic Lead-Salt Detectors - Disclosed is at least one embodiment of an infrared (IR) photovoltaic (PV) detector, comprising a IV-VI Lead (Pb)-salt layer disposed on a substrate and a charge-separation-junction (CSJ) structure associated with the IV-VI Pb-salt layer, wherein the CSJ structure comprises a plurality of element areas disposed upon or within the IV-VI Pb-salt layer, wherein the plurality of element areas are spaced apart from each other. Each element area may be connected to a first Ohmic contact thereby forming a plurality of interconnected first Ohmic contacts, and a second Ohmic contact may be disposed upon a portion of the IV-VI Pb-salt layer. In another non-limiting embodiment, a PV detector, comprising a heterojunction region that comprises at least one IV-VI Pb-salt material layer coupled to at least one non-Pb-salt layer, wherein the at least one IV-VI Pb-salt layer and the at least one non-Pb-salt layer form a p-n junction or Schottky junction with a type II band gap alignment. | 04-21-2016 |
| 257442000 | II-VI compound semiconductor (e.g., HgCdTe) | 7 |
| 20080203514 | High Performance CdxZn1-xTe X-Ray and Gamma Ray Radiation Detector and Method of Manufacture Thereof - The present invention is a radiation detector that includes a crystalline substrate formed of a II-VI compound and a first electrode covering a substantial portion of one surface of the substrate. A plurality of second, segmented electrodes is provided in spaced relation on a surface of the substrate opposite the first electrode. A passivation layer is disposed between the second electrodes on the surface of the substrate opposite the first electrode. The passivation layer can also be positioned between the substrate and one or both of the first electrode and each second electrode. The present invention is also a method of forming the radiation detector. | 08-28-2008 |
| 20080315342 | Semiconductor Device with a Bulk Single Crystal on a Substrate - Device and method of forming a device in which a substrate ( | 12-25-2008 |
| 20090020841 | Mesa-Type Photodetectors With Lateral Diffusion Junctions - The present invention relates to a stable mesa-type photodetector with lateral diffusion junctions. The invention has found that without resorting to the complicated regrowth approach, a simple Zn diffusion process can be used to create high-quality semiconductor junction interfaces at the exposed critical surface or to terminate the narrow-bandgap photon absorption layers. The invention converts the epi material layers near or at the vicinity of the etched mesa trench or etched mesa steps into a different dopant type through impurity diffusion process. Preferably the diffused surfaces are treated with a subsequent surface passivation. This invention can be applied to both top-illuminating and bottom-illuminating configurations. | 01-22-2009 |
| 20090261442 | NONEQUILIBRIUM PHOTODETECTORS WITH SINGLE CARRIER SPECIES BARRIERS - A photosensitive diode has an active region defining a majority carrier of a first conductivity type and a minority carrier of a second conductivity type. An extraction region is disposed on a first side of the active region and extracts minority carriers from the active region. It also has majority carriers within the extraction region flowing toward the active region in a condition of reverse bias. An exclusion region is disposed on a second side of the active region and has minority carriers within the exclusion region flowing toward the active region. It receives majority carriers from the active region. At least one of the extraction and exclusion region provides a barrier for substantially reducing flow of one of the majority carriers or the minority carriers, whichever is flowing toward the active region, while permitting flow of the other minority carriers or majority carriers flowing out of the active region. The barrier substantially reduces flow of the carriers without relying on diffusion length of the one carriers in order to reduce the flow. | 10-22-2009 |
| 20110018087 | PHOTODETECTOR ELEMENT - An element of photodetection of a radiation having a wavelength in vacuum close to a value λ | 01-27-2011 |
| 20150318418 | MINORITY CARRIER BASED HGCDTE INFRARED DETECTORS AND ARRAYS - Disclosed are minority carrier based mercury-cadmium telluride (HgCdTe) infrared detectors and arrays, and methods of making, are disclosed. The constructions provided by the invention enable the detectors to be used at higher temperatures, and/or be implemented on less expensive semiconductor substrates to lower manufacturing costs. An exemplary embodiment a substrate, a bottom contact layer disposed on the substrate, a first mercury-cadmium telluride layer having a first bandgap energy value disposed on the bottom contact layer, a second mercury-cadmium telluride layer having a second bandgap energy value that is greater than the first bandgap energy value disposed on the first mercury-cadmium telluride layer, and a collector layer disposed on the second mercury-cadmium telluride layer, wherein the first and second mercury-cadmium telluride layers are each doped with an n-type dopant. | 11-05-2015 |
| 20160111580 | METHOD OF MANUFACTURING A LOW NOISE PHOTODIODE - A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face. | 04-21-2016 |
