Entries |
Document | Title | Date |
20080246531 | SEMICONDUCTOR DEVICE, METHOD OF SWITCHING DRIVE CAPABILITY OF THE SEMICONDUCTOR DEVICE, AND SYSTEM INCLUDING SEMICONDUCTOR DEVICES - A semiconductor device connected to other semiconductor device, includes a control portion which controls a drive capability for the other semiconductor device based on control information for the other semiconductor device. | 10-09-2008 |
20080278214 | Method for removing noise, switching circuit for performing the same and display device having the switching circuit - A method for removing noise of a gate signal that is outputted from a gate driving circuit including a plurality of stages, the method includes electrically connecting two terminals of two adjacent stages that have noise components opposite in phase to each other during a first period, and electrically disconnecting the two terminals of the two adjacent stages that have the noise components opposite in phase to each other during a second period. | 11-13-2008 |
20090066401 | ANALOG INSULATION/MULTIPLEXER - An analog insulation multiplexer not causing magnetic saturation even if a small transformer is used and having a wide use temperature range. The analog insulation multiplexer includes: a first switching element for generating a drive control signal in accordance with an external signal; a drive insulation transformer for receiving the drive control signal on a primary side via a first resistor and for delivering an insulated drive control signal from a secondary side; a second switching element for chopping an analog signal input in accordance with the insulated drive control signal; and an analog signal insulation transformer for delivering an insulated chopped analog signal on a secondary side. The analog insulation multiplexer further includes a secondary side output adjusting circuit having a second resistor connected, on the primary side of the drive insulation transformer, in parallel to the first resistor and a capacitor having one end connected to a ground and another end connected in series to the second resistor. | 03-12-2009 |
20090160527 | HIGH FREQUENCY SWITCHING CIRCUIT - There is provided a high frequency switching circuit having good characteristics of high-order harmonics that has little variation. A high frequency switching circuit according to an aspect of the invention may include: a high frequency switch having one end connected to an input terminal receiving a high frequency signal and the other end connected to an output terminal of the high frequency signal, the high frequency switch turned on or off by a control signal; and a capacitor having a predetermined capacitance, and having one end connected the output terminal and the other end connected to a ground by a bonding wire. | 06-25-2009 |
20090256619 | HIGH-SIDE DRIVER - A high-side driving circuit is provided, where Q terminal and | 10-15-2009 |
20090302926 | On-Chip Source Termination in Communication Systems - An apparatus and system are provided to adjust an output voltage of an integrated circuit (IC) die. For instance, the apparatus can include an on-chip source termination and a bias generator. The bias generator can be configured to provide a source current to the on-chip source termination to adjust the output voltage. In particular, when adjusting the output voltage of the IC die, the bias generator can adjust the source current using a first current with a first adjustable current gain and a second current source with a second adjustable current gain. | 12-10-2009 |
20100026369 | METHOD FOR MONITORING WHETHER THE SWITCHING THRESHOLD OF A SWITCHING TRANSDUCER LIES WITHIN A PREDEFINED TOLERANCE RANGE - The invention relates to a method for monitoring whether or not the switching threshold of a switching sensor lies within a predefined tolerance region. The switching sensor comprises a signal input, to which an input signal is applied, and a signal output via which a switch output signal is emitted that can take a first value when the input signal is larger than the switching threshold and, otherwise, takes a second value. A modulator signal generated by a modulator (MD) is used as an input signal, characterized in that the modulator signal changes continuously or cyclically between an output value, which defines the upper limit of the tolerance region, and a test value which is smaller than the output value and defines the lower limit of the tolerance region. According to the invention, the switch output signal pulses at the rate of the modulator signal between the first and the second value when the switching threshold of the switching sensor lies within the tolerance region. Otherwise, the switch output signal does not pulse. The pulsation of the switch output signal is monitored by means of an evaluation device (A), an alarm signal being triggered when the switch output signal does not pulse for at least a predefined test period. | 02-04-2010 |
20100066430 | Controlling a Flicker Noise Characteristic Based on a Dielectric Thickness - The present disclosure relates to constructing and operating a transistor or other active device with significantly reduced flicker noise. | 03-18-2010 |
20100079191 | CIRCUIT FOR ACTUATION OF A TRANSISTOR - A circuit for actuation of a transistor. One embodiment provides an actuation output for connection to the actuation connection of the transistor. A measurement arrangement is provided for ascertaining a load current flowing through the load path or a voltage across the load path and for providing a measurement signal. An actuation current source having an actuation current output is connected to the actuation output and supplied with the measurement signal and designed to produce an actuation current at the actuation current output. The actuation current is at a current level dependent on the measurement signal. | 04-01-2010 |
20100109747 | Systems and Methods Using Improved Clock Gating Cells - A clock gating cell that comprises a latch in communication with an input enable logic and an output logic circuit, wherein the latch includes a pull-up and/or a pull-down circuit at an input node of the output logic circuit and circuitry preventing premature charge or discharge of the output logic circuit input node by the pull-up and/or the pull-down circuit when the clock gating cell is enabled. | 05-06-2010 |
20110133812 | PHYSICAL QUANTITY SENSOR - Provided is a physical quantity sensor capable of improving physical quantity detection precision thereof. The physical quantity sensor includes a bridge resistance type physical quantity detection element for generating a voltage based on a bias current and a physical quantity, a current supply circuit for supplying the bias current to the physical quantity detection element, and a leakage current control circuit for causing leakage currents flowing when switches of the current supply circuit are in an off state to flow into a ground terminal. | 06-09-2011 |
20110304379 | SIGNAL MATCHING MODULE WITH COMBINATION OF ELECTRONIC COMPONENTS FOR SIGNAL MATCHING OF SINGLE OR MULTIPLE SUBSYSTEMS - A signal matching module for a single or multiple subsystems is disclosed. The signal matching module includes a plurality of electronic components with a first part of the electronic components categorized into external electronic components and a second part of the electronic components categorized into internal components. Each of the electronic components may correspond to a switch that is controllable by a corresponding control pin. And the external electronic components may be used to compensate the internal electronic components when the latter fail to cause the impedance to reach the desired level. One of the embodiments is to provide a unit cell which is used to connect with one or multiple subsystems, and an external communication port to which the external electronic components are connected serving as a feeding point for the purpose of better impedance matching. | 12-15-2011 |
20120274384 | SEMICONDUCTOR DEVICE - The present invention discloses a semiconductor device and relates to the semiconductor field. The semiconductor device comprises: a PMOS transistor for processing a input signal, the PMOS transistor comprising a gate and a source, the source being connected to a first voltage source; and a restoring circuit connected to the PMOS transistor for preventing degradation of the PMOS transistor, wherein the restoring circuit makes the gate voltage of the PMOS transistor to be higher than the voltage of the first voltage source, when the input signal is at a high level. According to the semiconductor device of the present invention, a positive bias voltage is applied on the gate of the PMOS transistor through the restoring circuit when the PMOS transistor is turned off, which can accelerate electric parameter recovery for PMOS transistors and therefore improve the performance of PMOS transistors. | 11-01-2012 |
20130162321 | SEMICONDUCTOR DEVICE - A semiconductor device includes an information generation circuit configured to generate first information, an information multiplexing circuit configured to multiplex the first information and second information, and an information driving circuit configured to drive an output pad in response to an output signal of the information multiplexing circuit. | 06-27-2013 |
20130207712 | DRIVE UNIT FOR REVERSE-CONDUCTING SWITCHING ELEMENT - In a drive unit for a reverse-conducting switching element which is a driven switching element, a process to transfer electric charges to a conductive control terminal of the driven switching element is performed on the basis of a turn-on command or a turn-off command, thereby turning on and off the driven switching element. A transfer rate of the electric charges is changed in a period from when the transfer of the electric charges to the conductive control terminal is started until when it is completed. While judged that forward current flows in a free-wheel diode, the electric charges are inhibited from being charged to the conduction control terminal which corresponds to the free-wheel diode in which the forward current is judged to flow. While the electric charges are inhibited from being charged to the conductive control terminal, a change of the transfer rate is disabled. | 08-15-2013 |
20130265095 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 10-10-2013 |
20130307606 | SUPER HIGH VOLTAGE DEVICE AND METHOD FOR OPERATING A SUPER HIGH VOLTAGE DEVICE - A super high voltage device includes a first gate, a second gate, a drain, a first source, a second source, and a third source. The first gate is used for receiving a first control signal generated from a pulse width modulation controller. The second gate is used for receiving a second control signal generated from the pulse width modulation controller. The drain is used for receiving an input voltage. First current flowing from the drain to the first source varies with the first control signal and the input voltage. The second control signal is used for controlling turning-on and turning-off of second current flowing from the drain to the second source and third current flowing from the drain to the third source. The third source is proportional to the second current. | 11-21-2013 |
20140009204 | RADIO-FREQUENCY SWITCHES HAVING FREQUENCY-TUNED BODY BIAS - Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each FET having a respective gate and body. A resonance circuit connects the body of each of the at least one FET to a reference node. The resonance circuit may be configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, wherein the approximately closed circuit allows removal of surface charge from the body to the reference node. | 01-09-2014 |
20140009205 | SWITCHING DEVICE HAVING A DISCHARGE CIRCUIT FOR IMPROVED INTERMODULATION DISTORTION PERFORMANCE - Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes at least one field-effect transistor (FET) disposed between a first node and a second node, each having a respective source, drain, gate, and body. The system includes a coupling circuit including a first path and a second path, the first path being between the respective source or the respective drain and the respective gate of the at least one FET, the second path being between the respective source or the respective drain and the respective body of the at least one FET. The coupling circuit may be configured to allow discharge of interface charge from either or both of the coupled gate and body. | 01-09-2014 |
20140009206 | ADJUSTABLE GATE AND/OR BODY RESISTANCE FOR IMPROVED INTERMODULATION DISTORTION PERFORMANCE OF RADIO-FREQUENCY SWITCH - Radio-frequency (RF) switch circuits are disclosed having adjustable resistance to provide improved switching performance. RF switch circuits include at least one field-effect transistor (FET) disposed between first and second nodes, each of the FET having a respective gate and body. An adjustable-resistance circuit is connected to either or both of the respective gate and body of the FET(s). | 01-09-2014 |
20140062575 | RF Switch Branch Having Improved Linearity - Disclosed is a radio frequency (RF) switch branch having a reduced nonlinearity and an associated method for reducing nonlinearity in a RF switch branch. The RF switch branch includes a primary transistor, a first transistor having power terminals electrically connected between a drain node and a body node of the primary transistor, and a second transistor having power terminals electrically connected between the body node and a source node of the primary transistor. The RF switch may further include a body resistor electrically connected between the body node of the primary transistor and ground, and a gate resistor electrically connected between a gate of the primary transistor and a gate voltage source. A gate of each of the first transistor and the second transistor is electrically connected to the gate voltage source such that the first transistor and the second transistor are ON only when the primary transistor is ON. | 03-06-2014 |
20140176225 | RADIO FREQUENCY SWITCH CIRCUIT - There is provided a radio frequency switch circuit including a first switch circuit unit connected between a first node connected to a first signal port and a common node connected to a common port, and operated according to a first control signal, a second switch circuit unit connected between a second node connected to a second signal port and the common node and operated according to a second control signal having a phase opposite to that of the first control signal, a first shunt circuit unit connected between the second node and a common source node and operated according to the first control signal, a second shunt circuit unit connected between the first node and the common source node, and a source voltage generating unit generating a source voltage, wherein the source voltage is lower than a high level of the first control signal and higher than a ground potential. | 06-26-2014 |
20140184304 | GATE DRIVING DEVICES CAPABLE OF PROVIDING BI-DIRECTIONAL SCAN FUNCTIONALITY - A gate driving device includes a gate driving unit, a first control unit, a second control unit and a switch unit. The first control unit includes an input terminal receiving a first output signal and a first clock input terminal receiving a first clock signal. The second control unit includes an input terminal receiving a second output signal and a first clock input terminal receiving a second clock signal. The switch unit, the first control unit and the second control unit are coupled to a carryout signal output node for generating a carryout signal at the carryout signal output node which indicates whether the gate driving unit is functioning correctly. The first output signal and the second output signal of the gate driving unit are respectively one signal generated by any two different stages of shift register in the gate driving unit. | 07-03-2014 |
20140210543 | HIGH FREQUENCY SEMICONDUCTOR SWITCH - A switch circuit, a control circuit, a grounding wire and a control wire are formed on a substrate. The switch circuit connects an antenna terminal with one of multiple high frequency terminals. The control circuit outputs a control signal to the switch circuit. The grounding wire is disposed between the switch circuit and the control circuit and extends from a location proximate to an edge of the substrate to a location proximate to an opposite edge of the substrate. The control wire that carries the control signal is disposed between one end of the grounding wire and an edge of the semiconductor substrate. | 07-31-2014 |
20140218097 | SYSTEM AND METHOD FOR A DRIVER CIRCUIT - In accordance with an embodiment, a method of operating a gate driving circuit includes monitoring a signal integrity at an output of the gate driving circuit. If the signal integrity is poor based on the monitoring, output of the gate driving circuit is placed in a high impedance state and an external signal integrity failure signal is asserted. | 08-07-2014 |
20140218098 | RF SWITCHES HAVING INCREASED VOLTAGE SWING UNIFORMITY - Radio-frequency (RF) switch circuits are disclosed providing uniform voltage swing across a transmit switch for improved device performance. A switching circuit includes a switch having field effect transistors (FETs) defining an RF signal path between the input port and the output port, the switch configured to be capable of being in a first state corresponding to the input and output ports being electrically connected so as to allow passage of the RF signal therebetween, and a second state corresponding to the input and output ports being electrically isolated. The switching circuit includes a voltage distribution circuit configured to reduce voltage distribution variation across the switch, including one or more elements coupled to a selected body node of one or more FETs so as to reduce voltage distribution variation across the switch when the switch is in the first state and encountered by an RF signal at the input port. | 08-07-2014 |
20140266393 | BIPOLAR TRANSISTOR WITH LOWERED 1/F NOISE - In a bipolar transistor, a thin gate oxide, preferably less than 600 Å, is formed over the base surface region between the emitter and collector. A conductive gate, such as doped polysilicon, is then formed over the gate oxide and biased at the emitter voltage. In the example of a PNP transistor, when the emitter is forward biased with respect to the base to turn the transistor on, the gate is at a positive potential relative to the base. This causes the holes in the base conducting the emitter-collector current to be repelled away from the surface, and the electrons in the base to be attracted to the surface, so that more of the emitter-collector current flows deeper into the base. Thus, the effect of defects at the base surface is mitigated, and 1/f noise is reduced. The invention is equally applicable to PNP and NPN transistors. Other benefits result. | 09-18-2014 |
20140347118 | ELECTRONIC SWITCH WITH COMPENSATION OF NON-LINEAR DISTORTIONS - An electronic switch contains an input terminal, and output terminal and at least one first switch element, which provides a voltage-dependent characteristic. In this context, the first switch element connects the input terminal to the output terminal in a selective manner. The electronic switch further comprises a compensation element, which provides a voltage-dependent characteristic. In this context, the compensation element is arranged in such a manner that it at least partially compensates the frequency-dependent characteristic of the switch element. | 11-27-2014 |
20150008973 | SWITCHING CONTROL CIRCUIT FOR TARGET SWITCHING ELEMENT - In a switching control circuit, a determiner determines whether there is one of a first type of abnormality and a second type of abnormality different therefrom in a target switching element and/or the switching control circuit. A controller controls a second switching element to close a low-impedance discharge path for discharging a control terminal of the target switching element when it is determined that there is the first type of abnormality, and disables closing of a high-impedance discharge path for discharging the control terminal while the low-impedance discharge path is closed by the second switching element. The controller controls a third switching element to close the high-impedance discharge path when it is determined that there is the second type of abnormality; and disables closing of the low-impedance discharge path while the high-impedance discharge path is closed by the third switching element. | 01-08-2015 |
20150022256 | RADIO-FREQUENCY SWITCHES HAVING GATE BIAS AND FREQUENCY-TUNED BODY BIAS - Radio-frequency (RF) switch circuits are disclosed providing improved switching performance. An RF switch system includes a plurality of field-effect transistors (FETs) connected in series between first and second nodes, each FET having a gate and a body. A compensation network including a gate-coupling circuit couples the gates of each pair of neighboring FETs. The compensation network may further including a body-coupling circuit that couples the bodies of each pair of neighboring FETs. | 01-22-2015 |
20150070073 | SINGLE-CHIP MULTI-DOMAIN GALVANIC ISOLATION DEVICE AND METHOD - An integrated circuit, including:
| 03-12-2015 |
20150145586 | GATE DRIVING DEVICE AND INVERTER HAVING THE SAME - A gate driving device may include an inverter arm including a high-side switch and a low-side switch, a gate driving unit including a first gate driver that receives an instruction signal to command switching controlling of the inverter arm to output a switching control signal for the high-side switch and the low-side switch, and a second gate driver that receives the switching control signal for the high-side switch to be output to the high-side switch, and a balancing unit maintaining balance in voltage between the first gate driver and the second gate driver, according to the switching of the inverter arm based on the switching control signal for the high-side switch. | 05-28-2015 |
20150372676 | GALVANICALLY ISOLATED SWITCH SYSTEM - A galvanically isolated switch system and method comprising a plurality of switches having at least one terminal in series electrical connection, at least one control input electrically connected to at least one of the plurality of switches, wherein the at least one control input is isolated from direct current voltages and at least one passive component connected across the plurality of switches. | 12-24-2015 |
20160156345 | RADIO FREQUENCY SWITCH CIRCUIT AND CONTROL METHOD THEREOF | 06-02-2016 |