| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 327381000 | Preventing quick rise gating voltage (i.e., dv/dt) | 6 |
| 20110068849 | Active Monostable Positive Transient Protection Circuit for a Capacitive Load - An electrically noisy D.C. power source having high slew rate A.C. transient voltage, is cut off from a capacitive load by a switchable, constant slew rate voltage source, upon the detection of an A.C. transient voltage having a slew rate that would otherwise cause a current overload through the capacitive load or the voltage source, or the D.C. power source. | 03-24-2011 |
| 20130162322 | HIGH SPEED LOW LOSS GATE DRIVE CIRCUIT - A gate drive circuit includes an insulated gate semiconductor switch. A controlled current source is connected to the semiconductor switch gate terminal to provide a gate drive circuit that is responsive to recycled gate charge corresponding to an internal gate capacitance of the insulated gate semiconductor switch. | 06-27-2013 |
| 20140145780 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device has a transistor comprising a source electrode, a drain electrode, and a gate electrode, a diode and a switch element connected in series between the gate and source electrodes of the transistor, and a control circuit configured to supply a control signal for switching the switch element. The control circuit has a predetermined time constant and is configured to supply the control signal to the switch element if a pulse signal having a voltage that is equal to or higher than a predetermined voltage is supplied to the gate electrode of the transistor. | 05-29-2014 |
| 20140184305 | PASS GATE CIRCUIT - A pass gate circuit includes a first transistor coupled between an input node (receiving an input signal) and an output node (outputting an output signal). A second transistor is configured to generate a voltage difference in response to a bias current flowing therethrough, wherein that voltage difference is applied between a first gate of the first transistor and the output node. A differential amplifier functions to compare the voltage at the output node to a reference voltage and generate the bias current in response to that comparison. | 07-03-2014 |
| 20140203860 | GATE DRIVE CIRCUIT FOR TRANSISTOR - In a gate drive circuit, a gate voltage limiting circuit limits a gate voltage equal to or lower than a first limiting voltage in a first period, and limits the gate voltage equal to or lower than a second limiting voltage in a second period. A gate voltage generation circuit generates a drive voltage having a first set value, which is determined to operate the transistor in an active region, in the first period, and generates the drive voltage having a second set value, which is determined based on a gate withstand voltage of the transistor and loss in an on operation of the transistor in a saturated region, in the second period. The first limiting voltage is higher than the first set value by a predetermined value. The second limiting voltage is higher than the second set value by a predetermined value. | 07-24-2014 |
| 20150042397 | APPARATUS AND METHOD FOR CONTROL OF SEMICONDUCTOR SWITCHING DEVICES - Disclosed is a control circuit for control of a semiconductor switching device, such as an IGBT. The control circuit comprising a first feedback path between a first electrode and a control electrode of said semiconductor switching device which has a capacitance. The circuit is operable such that the capacitance in the first feedback path is dependent on the voltage level at said first electrode. In another embodiment the control circuit is operable such that a feedback signal begins to flow in the first feedback path immediately as the semiconductor switching device begins switching off, thereby causing a control action on the semiconductor switching device. | 02-12-2015 |
