| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 252519100 |
Compound viewed as composition (i.e., wherein atoms or molecules in a chemical formula are not present as whole small integer values or cannot be multiplied by a single-digit factor to yield integer values)
| 144 |
| 252519300 |
With organic compound
| 124 |
| 252519200 |
Organometallic (e.g., soap, complex, etc.)
| 106 |
| 252519400 |
Sulfur, selenium, or tellurium containing
| 62 |
| 252519500 |
Zinc compound
| 47 |
| 252520100 |
Tin compound
| 23 |
| 252520200 |
Titanium or zirconium compound
| 23 |
| 252521200 |
Iron, cobalt, or nickel compound
| 18 |
| 252521500 |
Halogen, carbon, phosphorus, or nitrogen containing
| 10 |
| 252521100 |
Rare earth metal compound
| 6 |
| 252521300 |
Silicon containing or with silicon compound
| 6 |
| 252520300 |
Silver, gold, or platinum compound | 3 |
| 20080277631 | Electrically Conductive Metal Impregnated Elastomer Materials and Methods of Forming Electrically Conductive Metal Impregnated Elastomer Materials - An electrically conductive, compliant elastomer material that is impregnated with a metal is formed by combining a metal salt with an elastomer precursor material to form a metal salt/precursor mixture, curing the metal salt/precursor mixture to form an elastomer impregnated with metal salt, and treating the elastomer impregnated with metal salt with a chemical reducing composition so as to convert at least a portion of the metal salt impregnated within the elastomer to a metal. The elastomer can be subjected to a suitable solvent that swells the elastomer during the chemical reduction of the metal salt to metal, which enhances the mechanical and electrical properties of the resultant metal impregnated elastomer material. | 11-13-2008 |
| 20090146117 | METHOD FOR PRODUCING SURFACE-TREATED SILVER-CONTAINING POWDER AND SILVER PASTE USING SURFACE-TREATED SILVER-CONTAINING POWDER - A method for producing a surface-treated silver-containing powder comprises vacuum freeze drying a dispersion liquid, which is obtained by dispersing silver or silver compound particles (a) in a solvent together with a surfactant (b) of an alkylamine type or an alkylamine salt type, or a phosphate type having a phosphorus content of 0.5 to 10% by mass so that the surfactant (b) is adsorbed in the surface of the silver or silver compound particles (a), thereby producing a silver-containing powder (c) whose surface is treated with the surfactant (b). Moreover, a silver paste is produced by dispersing the surface-treated silver-containing powder (c) in a solvent, or in a solvent with a resin. | 06-11-2009 |
| 20090294743 | Formulation for Obtaining a Conductive Concrete Mixture - A conductive concrete through which electrical power can pass, such as to provide cathodic protection for the reinforcing steel and resistance to chemical attacks. The conductive concrete mixture has greater mechanical strength properties than those of a standard concrete, low volume weight and mechanical characteristics that enable same to be used in both a structural and architectonic manner. In addition, the concrete is resistant to corrosion owing to the formulation thereof. The invention comprises an electricity conductor having a low water absorption value and a very low rupture deformation, thereby providing great structural stability. The purpose of the invention is to provide a type of concrete which is different from those currently available, owing to the formulation, mixture and novel characteristics thereof, and which is essentially characterised in that it combines the advantages of existing concretes with electrical conductivity. Moreover, the physical and chemical properties of the inventive concrete are greater than those of existing concretes, such as low volume weight. | 12-03-2009 |
| 252520400 |
Vanadium compound | 2 |
| 20100044651 | METHOD FOR THE PRODUCTION OF LITHIUM-RICH METAL OXIDES - The present invention relates to a process for preparing lithium-rich metal oxides and also the lithium-rich metal oxides which can be obtained by this process. Furthermore, the invention relates to the use of lithium-rich metal oxides for producing a cathode for a battery, in particular a lithium ion battery, and also a cathode for a lithium ion battery which comprises lithium-rich metal oxides. | 02-25-2010 |
| 20140231725 | DOPED ALUMINUM NITRIDE CRYSTALS AND METHODS OF MAKING THEM - Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal. | 08-21-2014 |
| 252520500 |
Tungsten or yttrium compound | 1 |
| 20140097391 | NANOSTRUCTURED SILICIDE COMPOSITES FOR THERMOELECTRIC APPLICATIONS - The present invention provides a method of preparing a nanocomposite thermoelectric material. The method includes heating a reaction mixture of a semiconductor material and a metal complex to a temperature greater than the decomposition temperature of the metal complex. The heating forms metallic inclusions having a size less than about 100 nm that are substantially evenly distributed throughout the semiconductor material forming the nanocomposite thermoelectric material. The present invention also provides a nanocomposite thermoelectric material prepared by this method. | 04-10-2014 |
| Entries |
| Document | Title | Date |
|---|
| 20080203361 | Method and Apparatus for Growth of Multi-Component Single Crystals - A method and apparatus for growth of uniform multi-component single crystals is provided. The single crystal material has at least three elements and has a diameter of at least 50 mm, a dislocation density of less than 100 cm | 08-28-2008 |
| 20080283801 | GROUP 13 NITRIDE PHOSPHOR AND METHOD OF PREPARING THE SAME - Provided are a group 13 nitride phosphor having high luminous intensity and excellent reliability obtained by preparing group 13 nitride crystallites homogeneously dispersible in a solid matrix by capping surface defects and homogeneously dispersing the group 13 nitride crystallites in the solid matrix and an efficient method of preparing the same. The present invention relates to a group 13 nitride phosphor consisting of group 13 nitride crystallites having a group 13 element dispersed in a matrix of a silica gel solid layer, with a diamine compound bonded to the surfaces of the group 13 nitride crystallites and the silica gel solid layer, and a method of preparing the same. | 11-20-2008 |
| 20080303004 | Method for producing lithium transition metal polyanion powders for batteries - This invention relates to a process for producing an improved powder for the positive electrode of lithium ion batteries wherein the powder comprises lithium, vanadium and phosphate. The process includes forming a suspension of the precursors with a high boiling temperature solvent and heating the suspension to a reaction temperature of between 250° C. and 400° C. to convert the precursors to the desired solid product. The solid product is separated from the suspension and is heated to a higher temperature to crystallize the product. The resulting product retains a small particle size thus avoiding the need for milling or other processing to reduce the product to a particle size suited for batteries. | 12-11-2008 |
| 20080308774 | Sputtering Target, Transparent Conductive Film, and Their Manufacturing Method - A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 μm or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably. | 12-18-2008 |
| 20090236568 | ALKALI EARTH METAL PRECURSORS FOR DEPOSITING CALCIUM AND STRONTIUM CONTAINING FILMS - Methods and compositions for the deposition of a film on a substrate. In general, the disclosed compositions and methods utilize a precursor containing calcium or strontium. | 09-24-2009 |
| 20090242852 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 10-01-2009 |
| 20090261306 | NON-LEAD RESISTOR COMPOSITION - A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li | 10-22-2009 |
| 20090321692 | Nanostructured material comprising semiconductor nanocrystal complexes - A material and corresponding method of making a material are disclosed. The material includes a first semiconductor material and a plurality of core semiconductor nanocrystals dispersed in the first semiconductor material. | 12-31-2009 |
| 20100038605 | TRANSPARENT CONDUCTIVE FILM, SINTERED BODY TARGET FOR TRANSPARENT CONDUCTIVE FILM FABRICATION, AND TRANSPARENT CONDUCTIVE BASE MATERIAL AND DISPLAY DEVICE USING THE SAME - A transparent conductive film which is amorphous, has a high transmittance of light in the visible region of short wavelengths, and is hard to beak with respect to bending is provided. The transparent conductive film is an amorphous oxide film composed of Ga, In, and O, in which a Ga content ranges from 35 at. % to 45 at. % with respect to all metallic atoms, a resistivity ranges 1.2×10 | 02-18-2010 |
| 20100065791 | SEMICONDUCTOR MATERIAL FOR RADIATION ABSORPTION AND DETECTION - A semiconductor material for radiation absorption and detection comprising a composition of stoichiometry Li(M | 03-18-2010 |
| 20100108953 | MATERIAL FOR PROTECTIVE COATINGS ON HIGH TEMPERATURE-RESISTANT CHROMIUM OXIDE-FORMING SUBSTRATES, METHOD FOR THE PRODUCTION THEREOF, AND USE THEREOF - The invention relates to a material for the formation of protective layers resistant to high temperatures on chromium oxide forming substrates, to a manufacturing method and to a use of these materials. It is suitable for a use as a chromium evaporation layer for metallic alloys containing chromium in the high temperature range. It is the object of the invention to provide a material for applications as a protective layer for chromium oxide forming alloys of high temperature resistance which is thermally and mechanically permanently stable and ensures a high electrical conductivity at the operating temperature of the fuel cell. In accordance with the invention, the material is formed from a spinel phase and an oxidic secondary phase which is preferably formed with an oxidic compound containing manganese. | 05-06-2010 |
| 20110006269 | SOLVENT-FREE SYNTHESIS OF SOLUBLE NANOCRYSTALS - Methods for preparing high quality and high yields of nanocrystals, i.e., metal-oxide-based nanocrystals, using a novel solvent-free method. The nanocrystals advantageously comprise organic alkyl chain capping groups and are stable in air and in nonpolar solvents. | 01-13-2011 |
| 20110006270 | CATHODE MATERIALS FOR SECONDARY (RECHARGEABLE) LITHIUM BATTERIES - The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO | 01-13-2011 |
| 20110057154 | CONDUCTIVE DOPED METAL-GLASS COMPOSITIONS AND METHODS - Provided herein are conductive glass-metal compositions, as well as methods of making and using such compositions. In one example, the compositions include gold (Au) doped lithium-borate glasses shown to exhibit a transition from ionic to electronic conduction within the same sample. This is achieved via appropriate heat treatment, and particularly by heat treatment after annealing, wherein the post-annealing heat treatment is performed at temperatures below the glass transition temperature (T | 03-10-2011 |
| 20110084239 | Transparent Conducting Oxides and Production Thereof - Transparent conducting oxides and production thereof are disclosed. An exemplary method of producing a transparent conducting oxide (TCO) material may comprise: providing a TCO target (110) doped with either a high-permittivity oxide or a low-permittivity oxide in a process chamber (100). The method may also comprise depositing a metal oxide on the target (110) to form a thin film having enhanced optical properties without substantially decreasing electrical quality. | 04-14-2011 |
| 20110108776 | INSULATED ULTRAFINE POWDER, PROCESS FOR PRODUCING SAME AND RESIN COMPOSITE MATERIAL WITH HIGH DIELECTRIC CONSTANT USING SAME - There are disclosed insulated ultrafine powder comprising electroconductive ultrafine powder which is in the form of sphere, spheroid or acicular each having a minor axis in the range of 1 to 100 nm and an insulating film applied thereto; a process for producing the same which is capable of covering the surfaces of the insulated ultrafine powder with the insulating film having a thickness in the range of 0.3 to 100 nm without causing any clearance or vacancy; and a resin composite material which uses the same. A high dielectric constant of the material is assured by adding a small amount of insulated ultrafine powder wherein an insulating film is applied to the electroconductive ultrafine powder, while maintaining the processability and moldability that are the characteristics inherent in a resin material. | 05-12-2011 |
| 20110278509 | METHOD FOR PREPARING MAYENITE-CONTAINING OXIDE AND METHOD FOR PREPARING ELECTROCONDUCTIVE MAYENITE-CONTAINING OXIDE - To provide a method for preparing a mayenite-containing oxide containing a mayenite type compound and having a hydride ion density of at least 1×10 | 11-17-2011 |
| 20120217454 | METHOD FOR FORMING AN ELECTRICALLY CONDUCTIVE OXIDE FILM, AN ELECTRICALLY CONDUCTIVE OXIDE FILM, AND USES FOR THE SAME - A method for forming an electrically conductive oxide film ( | 08-30-2012 |
| 20120261624 | Metal Doped Semiconductor Nanocrystals And Methods of Making The Same - Doped semiconductor nanocrystals and methods of making the same are provided. | 10-18-2012 |
| 20130082218 | SINTERED OXIDE MATERIAL, TARGET COMPRISING SAME, AND OXIDE SEMICONDUCTOR THIN FILM - An oxide sintered body including an oxide of indium and aluminum and having an atomic ratio Al/(Al+In) of 0.01 to 0.08. | 04-04-2013 |
| 20130140502 | SPUTTERING TARGET - An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight). | 06-06-2013 |
| 20130284988 | Method for lithium predoping, method for producing electrodes, and electric energy storage device using these methods - A predoping technique considered as highly practicable is an electrochemical method in which predoping is performed by assembling a battery such that an active material (electrode) and lithium are brought into direct contact with each other or short-circuited therebetween via an electric circuit, and by filling an electrolytic solution in the battery. However, in this case, much time is required, and there are problems such as the handling and the thickness accuracy of an extremely thin lithium metal foil that is not greater than 30 μm thick. By mixing a lithium-dopable material and lithium metal together in the presence of a solvent, such problems can be solved. | 10-31-2013 |
| 20140061550 | SOLUTION-PROCESSED TRANSITION METAL OXIDES - Embodiments may pertain to methods for preparing a transition metal oxide. | 03-06-2014 |
| 20140061551 | METHOD OF MANUFACTURING CONDUCTIVE MAYENITE COMPOUND - A method of manufacturing an electrical conductive mayenite compound, including, (1) a step of preparing a calcinated powder including calcium oxide and aluminum oxide at a ratio of 13:6 to 11:8 (based on molar ratio as converted to CaO:Al | 03-06-2014 |
| 20140246630 | CONTINUOUS PROCESS AND CONTINUOUS REACTING APPARATUS FOR SYNTHESIZING SEMICONDUCTOR GASES - The present invention relates to a continuous process and a continuous reacting apparatus for synthesizing a semiconductor gas including germane (GeH | 09-04-2014 |
| 20150041731 | Method For Preparing Scandium-Doped Hafnium Oxide Film - A method for preparing scandium-doped hafnium oxide film includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element. | 02-12-2015 |
| 20150053897 | Formation of Nanoparticles of Antimonides Starting from Antimony Trihydride as a Source of Antimony - The present invention relates to a process for preparing nanoparticles of antimonides of metal element(s) in the form of a colloidal solution, using antimony trihydride (SbH | 02-26-2015 |
| 20150295022 | SCANDIUM-DOPED HAFNIUM OXIDE FILM - A method for preparing a scandium-doped hafnium oxide film, includes preparing a hafnium target having scandium granules distributed on a peripheral surface thereof; and proceeding a sputtering process to form a scandium-doped hafnium oxide film on a substrate, wherein the scandium doping of the scandium-doped hafnium oxide film is in the range of 3-13%. Such scandium-doped hafnium oxide film is able to be used as an oxide layer in semiconductor element which effectively suppresses the current leakage and reduces the dimension of the semiconductor element. | 10-15-2015 |
| 20160016813 | OXIDE LAYER AND PRODUCTION METHOD FOR OXIDE LAYER, AS WELL AS CAPACITOR, SEMICONDUCTOR DEVICE, AND MICROELECTROMECHANICAL SYSTEM PROVIDED WITH OXIDE LAYER - An oxide layer | 01-21-2016 |
