| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 252521500 | Halogen, carbon, phosphorus, or nitrogen containing | 10 |
| 20090014695 | Mineral Dispersants and Methods for Preparing Mineral Slurries Using the Same - A mineral slurry comprises mineral particles in an amount equal to or greater than about 60 percent by total weight of the slurry, wherein 85 percent of the mineral particles have an average particle size equal to or less than 2 micrometers; a polyelectrolyte dispersant derived from an acrylate polymer formed by reversible addition-fragmentation chain transfer polymerization, wherein the polyelectrolyte dispersant comprises endgroups comprising thio-containing residues derived from a trithiocarbonate chain transfer agent, wherein the polyelectrolyte dispersant is in an amount less than about 35 pounds of the dispersant per ton of dry mineral particles, and wherein the polyelectrolyte dispersant has a molecular weight of 3000 to 10,000 Daltons and a polydispersity of at least 1.0 and less than 1.5; and the remainder water. | 01-15-2009 |
| 20090114887 | Bulk, free-standing cubic III-N substrate and a method for forming same. - A method of forming a bulk, free-standing cubic III-N substrate including a) growing epitaxial III-N material on a cubic III-V substrate using molecular beam epitaxy (MBE); and b) removing the III-V substrate to leave the III-N material as a bulk, free-standing cubic III-N substrate. A bulk, free-standing cubic III-N substrate for fabrication of III-N devices. | 05-07-2009 |
| 20090184296 | Method for Manufacturing LiMnPO4 - The main object of the invention is to obtain LiMnPO | 07-23-2009 |
| 20100078606 | PROCESS FOR PRODUCING GROUP III ELEMENT NITRIDE CRYSTAL, AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 04-01-2010 |
| 20100155677 | Polyurethane Roller with Reduced Surface Resistance - The present disclosure relates to an image forming component. The component may include a urethane body, comprising polydiene containing a residual double bond available for oxidation, and including a surface, wherein said double bond is oxidized. The component may also include a first conductive additive including an alkali metal salt, wherein the first conductive additive catalyzes the oxidation of the polydiene and a second conductive additive including an inert conductive additive that does not catalyze the polydiene oxidation, wherein the image forming component exhibits a surface resistivity in the range of 1.0×10 | 06-24-2010 |
| 20120168696 | METHOD FOR MAKING ELECTRODE COMPOSITE MATERIAL - The present disclosure relates to a method for making an electrode composite material. In the method, a trivalent aluminum source, a doped element source, and electrode active material particles are provided. The trivalent aluminum source and the doped element source are dissolved in a solvent to form a solution having trivalent aluminum ions and doped ions. The electrode active material particles are mixed with the solution having the trivalent aluminum ions and doped ions to form a mixture. A phosphate radical containing solution is added to the mixture to react with the trivalent aluminum ions and doped ions, thereby forming a number of electrode composite material particles. The electrode composite material particles are heated. | 07-05-2012 |
| 20150325845 | CHEMICAL SYNTHESIS ROUTE FOR LITHIUM ION BATTERY APPLICATIONS - An exemplary embodiment of a synthesis method includes the following acts or steps: providing LiMn | 11-12-2015 |
| 20160153113 | CONDUCTIVITY BASED ON SELECTIVE ETCH FOR GAN DEVICES AND APPLICATIONS THEREOF | 06-02-2016 |
| 20160181533 | IMPROVED ELECTRON TRANSFER COMPOSITION FOR USE IN AN ELECTRON INJECTION LAYER FOR ORGANIC ELECTRONIC DEVICES | 06-23-2016 |
| 20160376727 | HIGH PRESSURE REACTOR AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA - Provided is a high-pressure reactor suitable for a high-pressure process using supercritical ammonia grow bulk crystal of group III nitride having lateral dimension larger than 2 inches or to form various transition metal nitrides. The reactor has nutrient distributed along the reactor's longitudinal axis and seed material positioned at the reactor's inner wall and along the reactor's longitudinal axis. Nutrient diffuses through supercritical ammonia from the reactor's longitudinal axis and deposits on the seed material positioned by the reactor's inner wall. Both the nutrient and seed material are heated by the same heater. Material growth can primarily be due to material diffusion through supercritical ammonia. This configuration and methodology reduce convective movement of supercritical ammonia due to temperature differential, providing a more quiescent environment in which group III nitride or transition metal nitride is formed. | 12-29-2016 |
