| Entries |
| Document | Title | Date |
|---|
| 20090134365 | THERMOELECTRIC MATERIAL - A p-type oxide thermoelectric material which has a high output factor and a low environmental load. The thermoelectric material is composed of an oxide represented by the compositional formula (Ni | 05-28-2009 |
| 20090194746 | COMPOSITE CARBONATE AND METHOD FOR PRODUCING THE SAME - The present invention provides a nickel atom-, manganese atom- and cobalt atom-containing composite carbonate that is high in specific surface area and large in tap density, and useful as a raw material for producing a lithium nickel manganese cobalt composite oxide to be used in a positive electrode active material for use in a lithium secondary battery, and provides a method for industrially advantageously producing the composite carbonate. The composite carbonate includes nickel atoms, manganese atoms and cobalt atoms, and has an average particle size of 5 μm or more and less than 20 μm, a BET specific surface area of 40 to 80 m | 08-06-2009 |
| 20090242853 | Process For Producing Niobium Suboxide - A method is described for preparing a niobium suboxide represented by the formula, NbO | 10-01-2009 |
| 20090267030 | SINTERED BODY FOR VACUUM VAPOR DEPOSITION - A sintered body for vacuum vapor deposition, the sintered body being a sintered body of an oxide containing at least one cation element; the cation element having an electronegativity of 1.5 or more; and the sintered body having a surface roughness of 3 μm or less and a bulk resistance of less than 1×10 | 10-29-2009 |
| 20090302281 | METHOD AND APPARATUS FOR PRODUCING A DISLOCATION-FREE CRYSTALLINE SHEET - A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate. | 12-10-2009 |
| 20100148133 | P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND FABRICATION METHOD THEREOF - A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula Li | 06-17-2010 |
| 20100207075 | METHOD FOR PRODUCING METAL COMPLEX OXIDE POWDER - Disclosed is a low-cost metal complex oxide material which has excellent stability at high temperatures and good crystallinity, while placing only a little burden on the environment. Specifically disclosed is a method for producing a metal complex oxide powder represented by the following general formula: ABO | 08-19-2010 |
| 20100252785 | ITO POWDER AND METHOD OF PRODUCING THE SAME, COATING MATERIAL FOR TRANSPARENT CONDUCTIVE MATERIAL, AND TRANSPARENT CONDUCTIVE FILM - ITO particles are provided, which are small in variations of particle diameters and used for an ITO coating material capable of forming a transparent conductive film having high transparency and low haze value. Also, ITO coating material is provided, containing such ITO particles, and a transparent conductive film containing such ITO particles. Further, ITO powders are provided, wherein 90% or more of ITO particles constituting the ITO powders have a primary particle diameter of 20 nm or less. | 10-07-2010 |
| 20100264379 | POROUS METAL OXIDE AND METHOD OF PREPARING THE SAME - Porous metal oxides are provided. The porous metal oxides are prepared by heat treating a coordination polymer. A method of preparing the porous metal oxide is also provided. According to the method, the shape of the particles of the metal oxide can be easily controlled, and the shape and distribution of pores of the porous metal oxide can be adjusted. | 10-21-2010 |
| 20110101286 | ALUMINUM-CONTAINING ZINC OXIDE-BASED n-TYPE THERMOELECTRIC CONVERSION MATERIAL - ZnAlO series thermoelectric conversion materials have large thermal conductivity κ about 40 W/mK at room temperature, thus the dimensionless figure of merit ZT remains around 0.3 at 1000 deg C, which is a third of the value required in practical application. An n-type thermoelectric conversion material, comprising aluminum including zinc oxide, which is represented by a general formula: Zn | 05-05-2011 |
| 20110210294 | ELECTRICALLY CONDUCTING MICROPOROUS FRAMEWORKS - Electrically conducting vanadium arsenate or vanadium phosphate materials are described. The materials include a vanadium arsenate or vanadium phosphate framework structure about organic template and water molecules which may be removed to leave a microporous structure. The three-dimensional vanadium framework may provide electronic conductivity, while the extra-framework constituents may provide ionic conductivity. | 09-01-2011 |
| 20110260120 | THERMOELECTRIC CONVERSION MATERIAL AND THERMOELECTRIC CONVERSION ELEMENT - Disclosed is a thermoelectric conversion material that exhibits a high thermoelectric conversion properties. The thermoelectric conversion material comprises zinc oxide and is represented by formula (I): | 10-27-2011 |
| 20110297894 | Proton conducting ceramics in membrane separations - Perovskite materials of the general formula SrCeO | 12-08-2011 |
| 20120037857 | Method for Manufacturing a Powder for the Production of P-Type Transparent Conductive Films - This invention relates to material compositions, a manufacturing method for these materials and a manufacturing method for ceramic bodies, to be used as targets in physical vapour deposition techniques of p-type transparent conductive films. There is disclosed a method for manufacturing a pelletized oxide material M | 02-16-2012 |
| 20120181488 | METHOD FOR THE PRODUCTION OF METAL OXIDE-CONTAINING LAYERS - The invention relates to a liquid-phase method for producing metal oxide-containing layers from nonaqueous solution. In said method, an anhydrous composition containing i) at least one metal oxo-alkoxide of generic formula M | 07-19-2012 |
| 20120326098 | Positive Electrode Active Material For Lithium-Ion Batteries, Positive Electrode For Lithium-Ion Batteries, And Lithium-Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which attains a lithium ion battery having high safety. The positive electrode active material for lithium ion battery has a layer structure represented by the compositional formula: Li | 12-27-2012 |
| 20120326099 | Positive Electrode Active Material For Lithium Ion Battery, Positive Electrode For Lithium Ion Battery, And Lithium Ion Battery - The present invention provides a positive electrode active material for lithium ion battery which attains a lithium ion battery having high safety. The positive electrode active material has a layer structure for a lithium ion battery, in which the positive electrode active material is represented by the following composition formula: | 12-27-2012 |
| 20130009111 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, SPUTTERING TARGET, AND THIN FILM TRANSISTOR - Disclosed is an oxide for a semiconductor layer of a thin film transistor, which, when used in a thin film transistor that includes an oxide semiconductor in the semiconductor layer, imparts good switching characteristics and stress resistance to the transistor. Specifically disclosed is an oxide for a semiconductor layer of a thin film transistor, which is used for a semiconductor layer of a thin film transistor and contains at least one element selected from the group consisting of In, Ga and Zn and at least one element selected from the group X consisting of Al, Si, Ni, Ge, Sn, Hf, Ta and W. | 01-10-2013 |
| 20130119323 | CATHODE ACTIVE MATERIAL FOR SECONDARY BATTERY - Disclosed is a cathode active material for secondary batteries comprising, a compound having a transition metal layer containing lithium as at least one compound selected from the following Formula 1: Li(Li | 05-16-2013 |
| 20130119324 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - There is provided an oxide for semiconductor layers of thin-film transistors, which oxide can provide thin-film transistors with excellent switching characteristics and by which oxide favorable characteristics can stably be obtained even after the formation of passivation layers. The oxide to be used for semiconductor layers of thin-film transistors according to the present invention includes Zn, Sn, and Si. | 05-16-2013 |
| 20130168614 | NICKEL ALLYL AMIDINATE PRECURSORS FOR DEPOSITION OF NICKEL-CONTAINING FILMS - Disclosed are nickel allyl amidinate precursors having the formula: | 07-04-2013 |
| 20130240800 | SI ALLOY-CONTAINING NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRICAL DEVICES - Disclosed is a negative electrode active material for electrical devices, comprising an alloy having a composition represented by the formula: Si | 09-19-2013 |
| 20130299753 | OXIDE SINTERED BODY AND TABLETS OBTAINED BY PROCESSING SAME - The present invention discloses a tablet for ion plating, which is capable of providing high speed film formation of a transparent conductive film suitable for a solar cell, and continuing film formation without generating crack, fracture or splash; and an oxide sintered body for obtaining the same. The oxide sintered body etc. comprising indium oxide as a main component, and tungsten as an additive element, content of tungsten being 0.001 to 0.15, as an atomic ratio of W/(In+W), characterized in that said oxide sintered body is mainly composed of a crystal grain (A) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and a crystal grain (B) composed of the indium oxide phase with a bixbyite type structure, where tungsten does not make a solid solution, and has a density of 3.4 to 5.5 g/cm | 11-14-2013 |
| 20140054517 | CATHODE ACTIVE MATERIAL - A cathode active material is provided by which excellent charge and discharge properties in a high-current range can be obtained when used in non-aqueous electrolyte secondary batteries. The cathode active material consists of a mixed metal fluoride represented by the general formula Fe( | 02-27-2014 |
| 20140110639 | NEGATIVE-ELECTRODE ACTIVE MATERIAL, AND METHOD FOR PRODUCTION OF NEGATIVE-ELECTRODE ACTIVE MATERIAL - A negative-electrode active material characterized by containing a silicon oxide represented by a general formula SiO | 04-24-2014 |
| 20140332735 | COMPLEX OXIDE SINTERED BODY, SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE FILM, AND METHOD FOR PRODUCING SAME - The present invention provides a complex oxide sintered body | 11-13-2014 |
| 20150048280 | METHOD FOR MANUFACTURING NANOSTRUCTURED METAL OXIDE CALCINATE AND NANOSTRUCTURED METAL OXIDE CALCINATE THEREOF - A method for manufacturing a nanostructured metal oxide calcinate suitable for biosensor through a procedure of redox reaction is disclosed in this invention. The nanostructured metal oxide calcinate is free of impurities and produced with better electrocatalytic activity and better conductivity. Thus, an electrode of biosensor can be modified via the nanostructured metal oxide calcinate. The method for manufacturing the nanostructured metal oxide calcinate includes: disposing a first metal material and a second metal material into a reaction slot and making the first metal material and the second metal material dissolved within a solvent to form a mixture, wherein the pH value of the mixture ranges between 0 to 7, the mixture performs a redox reaction process for obtaining a metal oxide material; and eventually calcining the metal oxide material for obtaining a nanostructured metal oxide calcinate. | 02-19-2015 |
| 20150048281 | OXIDE FILM AND PROCESS FOR PRODUCING SAME - An oxide film according to this invention is a film of an oxide (possibly including inevitable impurities) containing silver (Ag) and nickel (Ni). This oxide film is an aggregate of microcrystals, an amorphous form including microcrystals, or an amorphous form and has p-type conductivity, which exhibits no clear diffraction peak with the XRD analysis, as seen in a chart in FIG. | 02-19-2015 |
| 20150048282 | TRANSPARENT COMPOUND SEMICONDUCTOR AND PRODUCTION METHOD THEREFOR - The present invention relates to a transparent compound semiconductor and to a production method therefor, and is adapted to provide a transparent compound semiconductor of high stability and charge mobility while being transparent. The transparent compound semiconductor according to the present invention has a composition of Ba | 02-19-2015 |
| 20150053898 | COMPOSITE OXIDE POWDER FOR SOLID OXIDE FUEL CELL AND ITS PRODUCTION METHOD - To provide a composite oxide powder for a solid oxide fuel cell containing lanthanum, strontium and/or calcium, manganese and oxygen and having a highly uniform composition, and its production method. | 02-26-2015 |
| 20150060743 | PEROVSKITE RELATED COMPOUND - Perovskite related compound of the present invention have layered structures in which perovskite units and A-rare earth structure units are alternately arranged. The reduced cell parameters a | 03-05-2015 |
| 20150123046 | TRANSPARENT CONDUCTIVE THIN FILM - Disclosed is a transparent conductive thin film and an electronic device including the same. The transparent conductive thin film may include a perovskite vanadium oxide represented by Chemical Formula 1, | 05-07-2015 |
| 20150329428 | PROCESS FOR PREPARING CERAMICS, CERAMICS THUS OBTAINED AND USES THEREOF, ESPECIALLY AS A SPUTTERING TARGET - A method for preparing a ceramic from an inorganic base material in the form of a powder with a high boiling point, including a step in which the powder of the inorganic base material is mixed with a second inorganic component which is also in powder form and which serves as a dopant for the inorganic base material. The dopant comprises a single inorganic material or a mixture of at least two inorganic materials that have a dopant effect on the inorganic base material. The method also includes a sintering step performed at a high temperature. Owing to the high density thereof, the resulting ceramics are suitable for use as a target element. The films and electrodes obtained from said ceramics have particularly beneficial properties. | 11-19-2015 |
| 20150380499 | P-TYPE TRANSPARENT OXIDE SEMICONDUCTOR, TRANSISTOR HAVING THE SAME, AND MANUFACTURE METHOD OF THE SAME - A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: | 12-31-2015 |
| 20160122634 | SYNTHESIS OF CsSnI3 BY A SOLUTION BASED METHOD - This invention discloses a solution based synthesis of cesium tin tri-iodide (CsSnI | 05-05-2016 |
| 20160149005 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME, CRYSTAL, AND MANUFACTURING METHOD FOR SAME - A semiconductor device or a crystal that suppresses phase transition of a corundum structured oxide crystal at high temperatures is provided. According to the present invention, a semiconductor device or a crystal structure is provided, including a corundum structured oxide crystal containing one or both of indium atoms and gallium atoms, wherein the oxide crystal contains aluminum atoms at least in interstices between lattice points of a crystal lattice. | 05-26-2016 |
| 20160197139 | STABLE AMORPHOUS METAL OXIDE SEMICONDUCTOR | 07-07-2016 |
