| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 252519140 | Sulfur, tellurium, selenium, nitrogen, phosphorus, or boron containing | 39 |
| 20090184295 | THERMOELECTRIC TRANSPORTATION MATERIAL CONTAINING NITROGEN - A nitrogen-containing thermoelectric material, which has an element composition represented by: | 07-23-2009 |
| 20090302283 | TRANSITION METAL HYDROXIDE AND OXIDE, METHOD OF PRODUCING THE SAME, AND CATHODE MATERIAL CONTAINTING THE SAME - Transition metal hydroxide and oxide, method of producing the same, and cathode material containing the same are disclosed. One method includes coupling an alkaline solution to a transition metal salt solution under an inert gas atmosphere, whereby the alkaline solution includes an additive. A transition metal oxide may be prepared by heating the transition metal hydroxide under an oxygen gas atmosphere. Cathode materials for lithium-ion batteries may be prepared incorporating the transition metal hydroxide and oxide embodiments disclosed herein. | 12-10-2009 |
| 20100102282 | PULVERULENT COMPOUNDS, PROCESSES FOR THE PREPARATION THEREOF AND THE USE THEREOF IN ELECTROCHEMICAL APPLICATIONS - The present invention relates to pulverulent compounds of the formula Ni | 04-29-2010 |
| 20110001096 | SYNTHESIS OF Pb ALLOY AND CORE/SHELL NANOWIRES - Embodiments of the present invention are directed to methods of producing PbSe | 01-06-2011 |
| 20110012069 | DOPED TIN TELLURIDES FOR THERMOELECTRIC APPLICATIONS - The p- or n-conductive semiconductor material comprises a compound of the general formula (I) | 01-20-2011 |
| 20110031453 | PROCESSES FOR POLYMERIC PRECURSORS FOR CAIGAS ALUMINUM-CONTAINING PHOTOVOLTAICS - This invention relates to processes for compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS. | 02-10-2011 |
| 20110108777 | METHOD OF FORMING FUNCTIONALIZED SILANES - Heteroatom doped silane compounds, e.g., phosphorus-containing silane compounds, are provided. The application also provides methods of producing the heteroatom doped silane compounds from halogen substituted silanes via reaction with a heteroatom-containing nucleophile. | 05-12-2011 |
| 20110155970 | MAYENITE-TYPE COMPOUND AND PROCESS FOR PRODUCTION OF SAME - The present invention relates to a mayenite-type compound in which a part of Ca of a mayenite-type compound containing Ca, Al and oxygen is substituted by at least one kind of an atom M selected from the group consisting of Be, Mg and Sr, in which the mayenite-type compound has an atom number ratio represented by M/(Ca+M) of from 0.01 to 0.50, and at least a part of free oxygen ions in a mayenite-type crystal structure are substituted by anions of an atom having electron affinity smaller than that of an oxygen atom. | 06-30-2011 |
| 20120061627 | FLUORESCENT NANOPARTICLES, METHOD FOR PREPARING SAME, AND APPLICATION THEREOF IN BIOLOGICAL MARKING - A method for preparing nanocrystals is disclosed. According to one aspect, the noncrystals include a semiconductor ternary compound consisting of the elements A, B and C. According to another aspect, the nanocrystals include a semiconductor of formula ABC | 03-15-2012 |
| 20120068128 | PROCESS FOR PRODUCING ELECTRODE MATERIALS - A process for producing electrode materials, which comprises treating a mixed oxide which comprises lithium and at least one transition metal as cations with at least one oxygen-containing organic compound of sulfur or phosphorus or a corresponding alkali metal or ammonium salt of an oxygen-containing organic compound of sulfur or phosphorus, or a fully alkylated derivative of an oxygen-containing compound of sulfur or phosphorus. | 03-22-2012 |
| 20120074361 | SEMICONDUCTOR NANOPARTICLES AND METHOD FOR PRODUCING SAME - Copper(II) acetate, zinc(II) acetate, and tin(IV) acetate are weighed so that the total amount of metal ions is 2.0×10 | 03-29-2012 |
| 20120097905 | CATHODE BASED UPON TWO KINDS OF COMPOUNDS AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - Provided is a cathode for lithium secondary batteries comprising a combination of one or more compounds selected from Formula 1 and one or more compounds selected from Formula 2. The cathode provides a high-power lithium secondary battery composed of a non-aqueous electrolyte which exhibits long lifespan, long-period storage properties and superior stability at ambient temperature and high temperatures. | 04-26-2012 |
| 20120097906 | HEAVILY DOPED PbSe WITH HIGH THERMOELECTRIC PERFORMANCE - The present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT>1.3 was observed when n | 04-26-2012 |
| 20120132868 | PROCESS FOR PREPARING PRECURSORS FOR TRANSITION METAL MIXED OXIDES - Process for preparing precursors for transition metal mixed oxides, wherein
| 05-31-2012 |
| 20120175568 | PROCESS FOR PREPARING TRANSITION METAL HYDROXIDES - The present invention relates to a process for preparing transition metal hydroxides with a mean particle diameter in the range from 6 to 12 μm (D50), which comprises combining, in a stirred vessel, at least one solution of at least one transition metal salt with at least one solution of at least one alkali metal hydroxide to prepare an aqueous suspension of transition metal hydroxide, and, in at least one further compartment, continuously introducing a mechanical power in the range from 50 to 10 000 W/l in a proportion of the suspension in each case, based on the proportion of the suspension, and then recycling the proportion into the stirred vessel. | 07-12-2012 |
| 20120228561 | PRODUCTION METHOD FOR LITHIUM ION SECONDARY BATTERY POSITIVE ELECTRODE MATERIAL - Provided is the method for producing, by heat treating raw material powder, a lithium ion secondary battery positive electrode material which contains an olivine-structure crystal represented by general formula LiM | 09-13-2012 |
| 20120235098 | CHALCOGEN COMPOUND POWDER, CHALCOGEN COMPOUND PASTE, PROCESS FOR PRODUCING CHALCOGEN COMPOUND POWDER, AND PROCESS FOR PRODUCING CHALCOGEN COMPOUND PASTE - Chalcogen compound powder containing Cu—In—Ga—Se and having an average particle diameter (D | 09-20-2012 |
| 20120248387 | P-ALGAN LAYER, METHOD OF MANUFACTURING THE SAME, AND GROUP III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The method according to the present invention includes a first step of supplying the Group V source gas at a flow rate B | 10-04-2012 |
| 20120305861 | INORGANIC COMPOUNDS - The invention relates to a chemical compound of the formula Ni | 12-06-2012 |
| 20130001481 | Compound Semiconductors and Their Application - Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In | 01-03-2013 |
| 20130009116 | COMPOUND SEMICONDUCTORS AND THEIR APPLICATION - Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In | 01-10-2013 |
| 20130009117 | NEW COMPOUND SEMICONDUCTORS AND THEIR APPLICATION - Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In | 01-10-2013 |
| 20130015414 | AlxGa1-xN Crystal Substrate | 01-17-2013 |
| 20130069019 | COMPOUND SEMICONDUCTORS AND THEIR APPLICATION - Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In | 03-21-2013 |
| 20130075673 | METHOD FOR PRODUCING LITHIUM-CONTAINING COMPOSITE OXIDE - The present invention provides a method for producing a lithium-containing composite oxide represented by general formula (1) below, the method at least including a step of preparing a solution by dissolving a lithium source, an element M source, a phosphorus source, and an element X source that serve as source materials in a solvent, the phosphorus source being added after at least the element M source is dissolved; a step of gelating the resulting solution; and a step of calcining the resulting gel: | 03-28-2013 |
| 20130099180 | USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL GROWN USING THE AMMONOTHERMAL METHOD - Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method. | 04-25-2013 |
| 20130119325 | CATHODE FOR SECONDARY BATTERY - Disclosed is a cathode for secondary batteries comprising a compound having a transition metal layer containing lithium as at least one compound selected from the following formula 1: (1−x)Li(Li | 05-16-2013 |
| 20130256609 | Thermoelectric Materials and Methods for Synthesis Thereof - Materials having improved thermoelectric properties are disclosed. In some embodiments, lead telluride/selenide based materials with improved figure of merit and mechanical properties are disclosed. In some embodiments, the lead telluride/selenide based materials of the present disclosure are p-type thermoelectric materials formed by adding sodium (Na), silicon (Si) or both to thallium doped lead telluride materials. In some embodiments, the lead telluride/selenide based materials are formed by doping lead telluride/selenides with potassium. | 10-03-2013 |
| 20140027681 | n-TYPE DOPED PbTe AND PbSe ALLOYS FOR THERMOELECTRIC APPLICATIONS - The present invention demonstrates that weak scattering of carriers leads to a high mobility and therefore helps achieve low electric resistivity with high Seebeck coefficient for a thermoelectric material. The inventors demonstrate this effect by obtaining a thermoelectric figure of merit, zT, higher than 1.3 at high temperatures in n-type PbSe, because of the weak scattering of carriers in the conduction band as compared with that in the valence band. The invention further demonstrates favorable thermoelectric transport properties of n-type PbTe | 01-30-2014 |
| 20140110640 | METHOD OF PRODUCING SULFIDE COMPOUND SEMICONDUCTOR BY USE OF SOLVOTHERMAL METHOD AND ROD-LIKE CRYSTAL OF SULFIDE COMPOUND SEMICONDUCTOR - The present invention provides a method of producing a sulfide compound semiconductor containing Cu, Zn, Sn and S, in which the method includes a solvothermal step of conducting a solvothermal reaction of Cu, Zn, Sn and S in an organic solvent, and a rod-like crystal of sulfide compound semiconductor containing Cu, Zn, Sn and S. | 04-24-2014 |
| 20140117292 | SEMICONDUCTOR NANOCRYSTAL, AND METHOD OF PREPARING THE SAME - A nanocrystal including a core including a Group III element and a Group V element, and a monolayer shell on the surface of the core, the shell including a compound of the formula ZnSe | 05-01-2014 |
| 20140131632 | ALLOYED SEMICONDUCTOR NANOCRYSTALS - The invention relates to methods for preparing 3-element semiconductor nanocrystals of the formula WYxZ(1−x), wherein W is a Group II element, Y and Z are different Group VI elements, and 0| 05-15-2014 | |
| 20140138591 | BLENDED CATHODE MATERIALS - A positive electroactive material is described, including: a lithium iron manganese phosphate compound having a composition of Li | 05-22-2014 |
| 20140319433 | Preparation of Nanoparticle Material - A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is described. The process comprises effecting conversion of a nanoparticle precursor composition comprising said group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. A process for fabricating a thin film comprising nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is also described, as well as a process for producing a printable ink formulation comprising said nanoparticles. | 10-30-2014 |
| 20150102271 | PROCESS FOR MANUFACTURING COLLOIDAL MATERIALS, COLLOIDAL MATERIALS AND THEIR USES - A colloidal material including semiconductor nanocrystals of formula AnXm, wherein A is selected from group Ib, IIa, IIb, IIIa, IIIb, IVa, IVb, Va, Vb, VIb, VIIb, VIII, IIb, III, IV or mixtures thereof, X is selected from group Va, VIa, VIIa or mixtures thereof, and n and m are independently a decimal number from 0 to 5. The semiconductor nanocrystals have a quasi 2D structure, wherein the smallest dimension is smaller than the other two dimensions by a factor of at least 1.5 and the faces substantially normal to the smallest dimension consist either of A or X. Also, a semiconducting thin film, an optoelectronic device, a laser, a photovoltaic cell, a diode, a light emitting diode or a display including the colloidal material. | 04-16-2015 |
| 20150380122 | ELECTRICALLY CONDUCTIVE THIN FILMS - An electrically conductive thin film including a compound represented by Chemical Formula 1 and having a layered crystal structure: | 12-31-2015 |
| 20160068405 | SOLUTION BASED SYNTHESIS OF COPPER-ARSENIC-CHALCOGEN NANOPARTICLES - Disclosed herein are synthesis methods and uses of nanoparticles containing copper, arsenic, and chalcogen, in particular their use for making thin films useful for electronics, photovoltaics, and solar energy conversion devices. | 03-10-2016 |
| 20160125969 | LIGHT-TRANSMITTING CONDUCTIVE FILM, DISPLAY DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF LIGHT-TRANSMITTING CONDUCTIVE FILM - An object is to provide a transparent conductive film having favorable transparency and conductivity at low cost. Another object is to reduce the resistivity of a transparent conductive film formed using conductive oxynitride including zinc and aluminum. Another object is to provide a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum. When aluminum and nitrogen are made to be included in a transparent conductive film formed using oxide including zinc to form a transparent conductive film that is formed using conductive oxynitride including zinc and aluminum, the transparent conductive film can have reduced resistivity. Heat treatment after the formation of the transparent conductive film that is formed using conductive oxynitride including zinc and aluminum enables reduction in resistivity of the transparent conductive film. | 05-05-2016 |
| 20160167965 | PROCESSES FOR SYNTHESIZING NANOCRYSTALS | 06-16-2016 |
