| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 252521300 | Silicon containing or with silicon compound | 6 |
| 20100078605 | Glass thick film embedded passive material - A method for forming an embedded passive device module comprises depositing a first amount of an alkali silicate material, co-depositing an amount of embedded passive device material with the amount of alkali silicate material; and thermally processing the amount of alkali silicate material and the amount of embedded passive device material at a temperature sufficient to cure the amount of alkali silicate material and the amount of embedded passive device material and form a substantially moisture free substrate. | 04-01-2010 |
| 20100155676 | SEMICONDUCTOR NANOCRYSTAL COMPOSITES - Semiconductor nanocrystal composites are provided. The composites include semiconductor nanocrystals, a radical scavenger and a matrix material. | 06-24-2010 |
| 20110001097 | SILICON COMPOSITE, MAKING METHOD, AND NON-AQUEOUS ELECTROLYTE SECONDARY CELL NEGATIVE ELECTRODE MATERIAL - A silicon composite comprises silicon particles whose surface is at least partially coated with a silicon carbide layer. It is prepared by subjecting a silicon powder to thermal CVD with an organic hydrocarbon gas and/or vapor at 900-1,400° C., and heating the powder for removing an excess free carbon layer from the surface through oxidative decomposition. | 01-06-2011 |
| 20120261627 | Compositions of Matter, and Methods of Removing Silicon Dioxide - Some embodiments include methods of removing silicon dioxide in which the silicon dioxide is exposed to a mixture that includes activated hydrogen and at least one primary, secondary, tertiary or quaternary ammonium halide. The mixture may also include one or more of thallium, BX | 10-18-2012 |
| 20130043442 | METAL CHLORIDE GAS GENERATOR, HYDRIDE VAPOR PHASE EPITAXY GROWTH APPARATUS, AND NITRIDE SEMICONDUCTOR TEMPLATE - A metal chloride gas generator includes: a tube reactor including a receiving section for receiving a metal on an upstream side, and a growing section in which a growth substrate is placed on a downstream side; a gas inlet pipe arranged to extend from an upstream end with a gas inlet via the receiving section to the growing section, for introducing a gas from the upstream end to supply the gas to the receiving section, and supplying a metal chloride gas produced by a reaction between the gas and the metal in the receiving section to the growing section; and a heat shield plate placed in the reactor to thermally shield the upstream end from the growing section. The gas inlet pipe is bent between the upstream end and the heat shield plate. | 02-21-2013 |
| 20150069309 | NITROGEN SUBSTITUTED CARBON AND SILICON CLATHRATES - Compositions comprising Type I clathrates of silicon (Si | 03-12-2015 |
