| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 252521100 | Rare earth metal compound | 6 |
| 20090001329 | RARE EARTH-OXIDES, RARE EARTH-NITRIDES, RARE EARTH-PHOSPHIES, AND TERNARY ALLOYS WITH SILICON - Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices. | 01-01-2009 |
| 20090065748 | Composite Materials for Infrared Sensing Markers - The present invention discloses composite materials for distant laser sensing in the infrared spectral region. The composites are disclosed to consist of the conductive polymer, the infrared active compound and the thermoplastic matrix polymer. | 03-12-2009 |
| 20110108778 | THERMOELECTRIC SKUTTERUDITE COMPOSITIONS AND METHODS FOR PRODUCING THE SAME - Compositions related to skutterudite-based thermoelectric materials are disclosed. Such compositions can result in materials that have enhanced ZT values relative to one or more bulk materials from which the compositions are derived. Thermo-electric materials such as n-type and p-type skutterudites with high thermoelectric figures-of-merit can include materials with filler atoms and/or materials formed by compacting particles (e.g., nanoparticles) into a material with a plurality of grains each having a portion having a skutterudite-based structure. Methods of forming thermoelectric skutterudites, which can include the use of hot press processes to consolidate particles, are also disclosed. The particles to be consolidated can be derived from (e.g., grinded from), skutterudite-based bulk materials, elemental materials, other non-Skutterudite-based materials, or combinations of such materials. | 05-12-2011 |
| 20120175570 | TABLET FOR ION PLATING, PRODUCTION METHOD THEREFOR AND TRANSPARENT CONDUCTIVE FILM - A tablet for ion plating which enables to attain high rate film-formation of a transparent conductive film suitable for a blue LED or a solar cell, and a noduleless film-formation not generating splash, an oxide sintered body most suitable for obtaining the same, and a production method thereof. | 07-12-2012 |
| 20120241696 | TABLET FOR VAPOR DEPOSITION AND METHOD FOR PRODUCING THE SAME - A tablet for vapor deposition of the present invention is characterized in that, crystal grains appearing on a fracture surface of an indium oxide sintered body have such a grain diameter distribution that the percentage due to crystal grains having a grain diameter corresponding to a highest peak is 20% or less; and the tablet for vapor deposition is produced by a method comprising: a first step of obtaining a calcined powder by mixing an indium oxide powder and a cerium oxide powder, and subjecting the mixture to a heat treatment at 1300° C. or above and 1550° C. or below; a second step of obtaining a granulated powder by mixing an uncalcined indium oxide powder and/or an uncalcined cerium oxide powder with the obtained calcined powder such that the ratio of the calcined powder is 50% by mass to 80% by mass, both inclusive, followed by granulation; and a third step of obtaining an indium oxide sintered body containing cerium as a dopant by molding the obtained granulated powder, thereby forming a molded body, and then sintering the molded body at a temperature which is 1100° C. or above and 1350° C. or below, and which is lower than the temperature of the heat treatment on the calcined powder in the first step by 200° C. or more. | 09-27-2012 |
| 20140061553 | LANTHANUM BORIDE SINTERED BODY AND METHOD FOR PRODUCING THE SAME - A lanthanum boride sintered body | 03-06-2014 |
