| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 252520100 | Tin compound | 23 |
| 20080203362 | PROCESS FOR THE MANUFACTURE OF DOPED SEMICONDUCTOR SINGLE CRYSTALS, AND III-V SEMICONDUCTOR SINGLE CRYSTAL - In a process for manufacturing doped semiconductor single crystal comprises solidifying in a crucible, the amount of dopant is added into the semiconductor melt after the beginning of the crystal growth onto the seed crystal, or after at least partial solidification of the semiconductor single crystal in a conical or tapered portion of the crucible. Dopant may be partially added in advance into the crucible, with the remainder added into the semiconductor melt as described. Type III-V semiconductor single crystals or wafers having a diameter of at least about 100 mm, can be prepared having an electrical conductivity of at least about 250 Siemens/cm, and/or an electric resistivity of at most about 4×10 | 08-28-2008 |
| 20090050858 | INDIUM-TIN MIXED OXIDE POWDER - Indium-tin mixed oxide powder which consists of primary particle aggregates and contains 50 to 90% by weight indium oxide, calculated as In | 02-26-2009 |
| 20090065747 | TIN OXIDE-BASED SPUTTERING TARGET, LOW RESISTIVITY, TRANSPARENT CONDUCTIVE FILM, METHOD FOR PRODUCING SUCH FILM AND COMPOSITION FOR USE THEREIN - The present invention is directed to a composition consisting essentially of:
| 03-12-2009 |
| 20090121199 | IN SM OXIDE SPUTTERING TARGET - A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements. | 05-14-2009 |
| 20090152511 | INDIUM TIN OXIDE TARGET, METHOD FOR MANUFACTURING THE SAME, TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE, AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE - Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm | 06-18-2009 |
| 20090230365 | Method of synthesis of proton conducting materials - A method of producing a proton conducting material, comprising adding a pyrophosphate salt to a solvent to produce a dissolved pyrophosphate salt; adding an inorganic acid salt to a solvent to produce a dissolved inorganic acid salt; adding the dissolved inorganic acid salt to the dissolved pyrophosphate salt to produce a mixture; substantially evaporating the solvent from the mixture to produce a precipitate; and calcining the precipitate at a temperature of from about 400° C. to about 1200° C. | 09-17-2009 |
| 20100117035 | ELECTROCONDUCTIVE TIN OXIDE HAVING HIGH MOBILITY AND LOW ELECTRON CONCENTRATION - Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed. | 05-13-2010 |
| 20100140570 | Sintered Compact of Composite Oxide, Amorphous Film of Composite Oxide, Process for Producing said Film, Crystalline Film of Composite Oxide and Process for Producing said Film - Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film. | 06-10-2010 |
| 20100207076 | Conductive tin oxide sol and process for producing same - There is provided a conductive tin oxide sol having a high transparency, and a process for producing the sol, a coating composition by use of the sol and a material coated with the coating composition. The conductive tin oxide sol containing phosphorus-doped conductive tin oxide colloidal particles (A), wherein a sol prepared so as to have the colloidal particles (A) in a concentration of 10 mass % in the sol has a transmittance of 30% or more at a wavelength of 600 nm in an optical path length of 10 mm. The particle diameter of the conductive tin oxide sol by observation with transmission electron microscope is 2 to 25 nm. The molar ratio of the doped phosphorus (P) to the tin oxide (SnO | 08-19-2010 |
| 20100207077 | PASTE COMPOSITION - A paste composition comprises a dye containing a novel oligomeric compound with improved dispersion performance. The oligomeric compound comprises a tail structure consisting of hydrophilic and hydrophobic blocks and an amine or imidazole head structure. The paste composition can be used to prepare a semiconductor electrode of a solar cell. A semiconductor electrode produced using the paste composition and a solar cell fabricated using the semiconductor electrode exhibit greatly improved power conversion efficiency and superior processability. | 08-19-2010 |
| 20100301284 | METHODS OF MANUFACTURING ACTIVE MATERIAL AND ELECTRODE, ACTIVE MATERIAL, AND ELECTRODE - An active material, an electrode, and a battery which exhibit high safety in overcharging tests, and methods of manufacturing them are provided. The active material comprises a first metal oxide particle | 12-02-2010 |
| 20110163279 | OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM - The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element. | 07-07-2011 |
| 20110175041 | MANUFACTURING METHOD OF ITO PARTICLES, AND ITO POWDER, COATING MATERIAL FOR TRANSPARENT ELECTROCONDUCTIVE MATERIAL AND TRANSPARENT ELECTROCONDUCTIVE FILM - ITO powder and a producing method of the same, capable of producing ITO particles without using a solvent with a high boiling point by a simple treatment method without a heating process in an atmosphere which causes sintering. Also, an ITO powder is provided, which is suitable for a coating material for a transparent electroconductive material, the ITO powder being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to manufacture a precursor; and a second step of applying heat treatment to the precursor in a pressurizing vessel, to thereby generate ITO particles. | 07-21-2011 |
| 20110278510 | Tin-Doped Indium Oxide Thin Films And Method For Making Same - The tin-doped indium oxide thin film in accordance with the present invention has a tin-doped indium oxide, yttrium ions and europium ions, wherein the yttrium ions are proportional to 0.1-10 mol % of the tin-doped indium oxide while the europium ions proportional to 0.05-5 mol % of the tin-doped indium oxide. | 11-17-2011 |
| 20120132869 | ELECTRICAL CONTACT MATERIAL OF SILVER MATRIX CAPABLE OF RESISTING ARC EROSION AND CONTAINING NO CADMIUM-COMPOSITE - In an electric contact material of silver matrix capable of resisting arc erosion and containing no cadmium-composite, an Ag—(SnO | 05-31-2012 |
| 20120280188 | TRANSPARENT CONDUCTIVE THIN FILM AND METHOD OF MANUFACTURING THE SAME - An embodiment of the disclosed technology discloses a transparent conductive thin film and a method of manufacturing the same. The embodiment of the disclosed technology employs tin (II) oxalate (Sn | 11-08-2012 |
| 20120313057 | In-Ga-Sn OXIDE SINTER, TARGET, OXIDE SEMICONDUCTOR FILM, AND SEMICONDUCTOR ELEMENT - An oxide sintered body including indium element (In), gallium element (Ga) and tin element (Sn) in atomic ratios represented by the following formulas (1) to (3): | 12-13-2012 |
| 20120319057 | Sintered Compact, Amorphous Film and Crystalline Film of Composite Oxide, and Process for Producing the Films - An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided. | 12-20-2012 |
| 20130187104 | INDIUM TIN OXIDE POWDER, METHOD FOR PRODUCING SAME, DISPERSION, PAINT, AND FUNCTIONAL THIN FILM - This indium tin oxide powder has a median diameter of 30 nm to 45 nm and a D | 07-25-2013 |
| 20130248781 | PIGMENTS - The present invention relates to semiconducting pigments based on flake-form substrates which have a doped tin dioxide layer on the surface and to the use of the pigments in paints, coatings, printing inks, plastics, security applications, floorcoverings, films, formulations, ceramic materials, glasses, paper, for laser marking, in thermal protection, in dry preparations, in pigment preparations and in particular as varistor pigment. | 09-26-2013 |
| 20140264197 | Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided. | 09-18-2014 |
| 20150090943 | ANTIMONY-DOPED TIN OXIDE POWDER AND METHOD OF PRODUCING THE SAME - This antimony-doped tin oxide powder is an antimony-doped tin oxide powder characterized by: (A) including at least three kinds of ions selected from the group consisting of Sn | 04-02-2015 |
| 20150371725 | INORGANIC MATERIAL PASTE FOR ELECTRONIC COMPONENTS SUCH AS RESISTORS AND DIELECTRICS, AND METHOD OF PRODUCING SAME - An inorganic material paste obtained by mixing an organometallic compound, inorganic material particles, and a solvent. Additionally provided is an inorganic material paste obtained by mixing inorganic material particles, which are obtained by subjecting an organometallic compound to calcination or light irradiation, and a solvent. The foregoing inorganic material paste can reduce the amount of glass material, reduce the film thickness because the volume density of the functional material is high, yield favorable production efficiency, and achieve cost reduction since it is suitable for mass production. For instance, upon producing a thin film resistor, the resistor obtained by using the paste of the present invention is characterized in having superior stability even in the form of a thin film, and having minimal change in the resistance value caused by self-heating even under a high current. Consequently, this paste is useful in producing thick films of various oxide materials such as fluorescent substances, dielectrics and battery materials, without limitation to resistors. | 12-24-2015 |
