Entries |
Document | Title | Date |
20090277873 | DRY ETCHING METHOD - The object of the present invention is to provide a dry etching method which permits the reduction of the amount of any etching product formed during the etching process to thus improve the in-plane etching uniformity with respect to an object to be etched. The dry etching method comprises the steps of providing an electrode equipped with an electrode-presser member which at least comprises a surface layer composed of an yttrium-containing oxide and which is disposed on the peripheral region of the upper surface of the electrode, placing a substrate on the electrode and then subjecting the substrate to dry etching, while preventing the formation of any etching product at the peripheral region of the electrode. | 11-12-2009 |
20120145670 | METHOD FOR ETCHING A MATERIAL IN THE PRESENCE OF A GAS - The invention relates to a method for etching a structure ( | 06-14-2012 |
20120248064 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes: a gas supply mechanism supplying gas containing a halogen element and basic gas into a process chamber; and a first temperature adjusting member and a second temperature adjusting member adjusting a temperature of the substrate in the process chamber, wherein the second temperature adjusting member adjusts the temperature of the substrate to a higher temperature than the first temperature adjusting member. | 10-04-2012 |
20120255932 | NANOFABRICATION DEVICE AND METHOD FOR MANUFACTURE OF A NANOFABRICATION DEVICE - A nanofabrication device in an example includes a conducting nanotip and a gas microchannel adjacent to the nanotip and configured to deliver a gas to the nanotip. The nanofabrication device can be used for controlled and localized etching and/or deposition of material from a substrate. | 10-11-2012 |
20140175054 | INDEPENDENT RADIANT GAS PREHEATING FOR PRECURSOR DISASSOCIATION CONTROL AND GAS REACTION KINETICS IN LOW TEMPERATURE CVD SYSTEMS - In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums. | 06-26-2014 |
20140360979 | DRY NON-PLASMA TREATMENT SYSTEM AND METHOD OF USING - A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate. | 12-11-2014 |
20150144595 | GAS CLUSTER IRRADIATION MECHANISM, SUBSTRATE PROCESSING APPARATUS USING SAME, AND GAS CLUSTER IRRADIATION METHOD - A gas cluster irradiation mechanism includes at least one nozzle unit having a plurality of gas injection nozzles, and a gas supply unit for supplying the gas to the nozzle unit. The plurality of the gas injection nozzles is set such that when the gas is supplied from the gas injection nozzles at a preset flow rate a pressure in the processing chamber remains below a limit at which the gas cluster begins to be destroyed. Further, the gas injection nozzles are arranged with a preset interval between neighboring gas injection nozzle such that respective areas in which residual gas from the neighboring gas injection nozzles spreads do not overlap with each other, the residual gas being part of the gas injected from the gas injection nozzles and not contributing to generation of the gas cluster. | 05-28-2015 |