| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216066000 | Using ion beam, ultraviolet, or visible light | 31 |
| 20080296258 | Plenum reactor system - Techniques for generating reactions on surfaces that can operate at room temperature and pressure with visible laser light as a radiation source and environmentally sound gases for processing. The apparatus is highly compact, simple, reliable and low cost to operate and maintain, and can dry clean and condition surfaces without causing damage or leaving a residue. Gas is injected at one end of a plenum, directed through the plenum in the presence of the laser radiation, and exhausted at the other end. The plenum creates a highly confined space for directional laminar movement of gas, laser light and by-products, permitting a high degree of uniformity and reaction efficiency. Minimal internal surface area and volume of the reactor prevents by-products from forming, eliminating costly cleaning and downtime. | 12-04-2008 |
| 20090084757 | UNIFORMITY CONTROL FOR ION BEAM ASSISTED ETCHING - An approach for providing uniformity control in an ion beam etch is described. In one embodiment, there is a method for providing uniform etching in an ion beam based etch process. In this embodiment, an ion beam is directed at a surface of a substrate. The surface of the substrate is etched with the ion beam. The etching is controlled to attain uniformity in the etch of the substrate. The control attains uniformity as a function of at least one ion beam based parameter selected from a plurality of ion beam based parameters. | 04-02-2009 |
| 20090114620 | ATOM PROBE ELECTRODE TREATMENTS - A method for treating an atom probe electrode ( | 05-07-2009 |
| 20090166325 | Method for Producing a Photonic Crystal - The invention relates to a process for producing a photonic crystal which consists of a material of high refractive index, comprising the following process steps:
| 07-02-2009 |
| 20090173716 | Lift-off patterning processes employing energetically-stimulated local removal of solid-condensed-gas layers - The invention provides a method for forming a patterned material layer on a structure, by condensing a vapor to a solid condensate layer on a surface of the structure and then localized removal of selected regions of the condensate layer by directing an ion beam at the selected regions, exposing the structure at the selected regions. A material layer is then deposited on top of the solid condensate layer and the exposed structure at the selected regions. Then the solid condensate layer and regions of the material layer that were deposited on the solid condensate layer are removed, leaving a patterned material layer on the structure. | 07-09-2009 |
| 20090179005 | Nanotube Processing Employing Solid-Condensed-Gas-Layers - In a method for processing a nanotube, a vapor is condensed to a solid condensate layer on a surface of the nanotube and then at least one selected region of the condensate layer is locally removed by directing a beam of energy at the selected region. The nanotube can be processed with at least a portion of the solid condensate layer maintained on the nanotube surface and thereafter the solid condensate layer removed. Nanotube processing can include, e.g., depositing a material layer on an exposed nanotube surface region where the condensate layer was removed. After forming a solid condensate layer, an electron beam can be directed at a selected region along a nanotube length corresponding to a location for cutting the nanotube, to locally remove the condensate layer at the region, and an ion beam can be directed at the selected region to cut the nanotube at the selected region. | 07-16-2009 |
| 20090236312 | Method and apparatus for film thickness adjustment - An ion source is used to adjust film thickness uniformity. Voltage is adjusted based on the film thickness to remove material on thicker parts of the substrate while removing almost no material on the thinner part of the substrate. Special procedure is used to obtain virtually uniform film without reducing minimum thickness on a substrate. Source calibration is used to maintain precise etch rate control. Film thicknesses can be adjusted to less than 0.5 nanometers uniformity. | 09-24-2009 |
| 20090308844 | MONOLITHIC HIGH ASPECT RATIO NANO-SIZE SCANNING PROBE MICROSCOPE (SPM) TIP FORMED BY NANOWIRE GROWTH - A scanning probe where the micromachined pyramid tip is extended by the growth of an epitaxial nanowire from the top portion of the tip is disclosed. A metallic particle, such as gold, may terminate the nanowire to realize an apertureless near-field optical microscope probe. | 12-17-2009 |
| 20100116788 | Substrate temperature control by using liquid controlled multizone substrate support - A substrate support useful in a reaction chamber of a plasma processing apparatus is provided. The substrate support comprises a base member and a heat transfer member overlying the base member. The heat transfer member has multiple zones to individually heat and cool each zone of the heat transfer member. An electrostatic chuck overlies the heat transfer member. The electrostatic chuck has a support surface for supporting a substrate in a reaction chamber of the plasma processing apparatus. A source of cold liquid and a source of hot liquid are in fluid communication with flow passages in each zone. A valve arrangement is operable to independently control temperature of the liquid by adjusting a mixing ratio of the hot liquid to the cold liquid circulating in the flow passages. In another embodiment, heating elements along a supply line and transfer lines heat a liquid from a liquid source before circulating in the flow passages. | 05-13-2010 |
| 20100147801 | High-Frequency Plasma Processing Apparatus - This application discloses a High-Frequency plasma processing apparatus comprising a process chamber in which a substrate to be processed is placed, a process-gas introduction line for introducing a process gas into the process chamber, a first HF electrode provided in the process chamber, a first HF power source for applying voltage to the first HF electrode, thereby generating plasma of the process gas. The apparatus further comprises a second HF electrode facing the first HF electrode in the process chamber, interposing discharge space, and a series resonator connecting the second HF electrode and the ground. The frequency of the first HF power source is not lower than 30 MHz. The series resonator is resonant as the distributed constant circuit at the frequency of the first HF power source. | 06-17-2010 |
| 20100224592 | CHARGED PARTICLE BEAM PROCESSING - Electron-beam-induced chemical reactions with precursor gases are controlled by adsorbate depletion control. Adsorbate depletion can be controlled by controlling the beam current, preferably by rapidly blanking the beam, and by cooling the substrate. The beam preferably has a low energy to reduce the interaction volume. By controlling the depletion and the interaction volume, a user has the ability to produce precise shapes. | 09-09-2010 |
| 20110036810 | MANUFACTURING METHOD OF ELECTRON SOURCE - An electron gun with a truncated-cone-shaped cathode with uniform emission current density is efficiently manufactured. A manufacturing method of a cathode electron gun equipped with a supply source for diffusing oxide of a metal element on a single crystal needle of tungsten or molybdenum includes steps of forming a truncated-cone-shape having a flat plane at a single crystal edge serving as the cathode by machining beforehand, thereafter thinning and removing a front layer of the flat plane by a focused gallium ion beam, and re-flattening it. | 02-17-2011 |
| 20110042353 | NANOMETER-SCALE ABLATION USING FOCUSED, COHERENT EXTREME ULTRAVIOLET/SOFT X-RAY LIGHT - Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials. | 02-24-2011 |
| 20110163068 | Multibeam System - A multibeam system in which a charged particle beam and one or more additional beams can be directed to the target within a single vacuum chamber. A first beam colunm preferably produces a beam for rapid processing, and a second beam column produces a beam for more precise processing. A third beam column can be used to produce a beam useful for forming an image of the sample while producing little or no change in the sample. | 07-07-2011 |
| 20120080406 | METHOD AND SYSTEM FOR PREPARING A LAMELA - A system and a method for preparing a lamella. The method may include aligning, by the manipulator, a mask and a sample. Positioning the mask and the sample in front of an ion miller while unchanging the spatial relationship between the mask and the sample. Milling a first exposed portion of the sample until exposing a first sidewall of the lamella. Positioning the mask and the sample in front of the ion miller so that the mask masks a second masked portion of the sample. Milling, by the ion miller, the second exposed portion of the sample until exposing a second sidewall of the lamella. Removing, by the miller, matter from both sides of the lamella; and detaching the lamella from the sample. | 04-05-2012 |
| 20120080407 | Multi-Source Plasma Focused Ion Beam System - The present invention provides a plasma ion beam system that includes multiple gas sources and that can be used for performing multiple operations using different ion species to create or alter submicron features of a work piece. The system preferably uses an inductively coupled, magnetically enhanced ion beam source, suitable in conjunction with probe-forming optics sources to produce ion beams of a wide variety of ions without substantial kinetic energy oscillations induced by the source, thereby permitting formation of a high resolution beam. | 04-05-2012 |
| 20120132618 | METHOD AND APPARATUS FOR MODULATING WAFER TREATMENT PROFILE IN UV CHAMBER - A method and apparatus for providing a uniform UV radiation irradiance profile across a surface of a substrate is provided. In one embodiment, a substrate processing tool includes a processing chamber defining a processing region, a substrate support for supporting a substrate within the processing region, an ultraviolet (UV) radiation source spaced apart from the substrate support and configured to transmit ultraviolet radiation toward the substrate positioned on the substrate support, and a light transmissive window positioned between the UV radiation source and the substrate support, the light transmissive window having an optical film layer coated thereon. In one example, the optical film layer has a non-uniform thickness profile in a radial direction, wherein a thickness of the optical film layer at the peripheral area of the light transmissive window is relatively thicker than at the center region of the optical film layer. | 05-31-2012 |
| 20120199552 | APPARATUS AND METHOD FOR SAMPLE PREPARATION - A sample stage for processing a sample in an ion beam etching apparatus has positioning arrangements each having a receiving apparatus and a mask, a sample being mountable in the receiving apparatus with reference to an ion beam and positionable relative to the mask. The sample stage includes a mechanism that enables a switchover between respective positioning arrangements so a selected positioning arrangement is respectively orientable toward the ion beam. The sample in the selected positioning arrangement is exposed to the ion beam while the remaining positioning arrangements face away from the ion beam. The positioning arrangements are arranged in one common vessel. A method for sequential preparation of at least two samples in an ion beam etching unit using the sample stage is also disclosed. | 08-09-2012 |
| 20120248065 | METHOD FOR FORMING A PATTERN - According to one embodiment, a pattern forming methoo is disclosed. A film is formed on a substrate to be processed. A gaps is formed in a surface of the film. A photo-curable imprinting agent is supplied on the film surface in which the gaps are formed. The agent is contacted with a template including a concave pattern. The contacting is configured to fill the concave pattern with the agent. Light is applied to the agent while the agent is contacted with the template, wherein the agent is cured by the light. The template is separated from the substrate, wherein a pattern of the cured agent is formed on the substrate. | 10-04-2012 |
| 20130001195 | METHOD OF STACK PATTERNING USING A ION ETCHING - The embodiments disclose a method of stack patterning, including loading a stack into a stationary stack stage, rotating one or more ion beam grid assemblies substantially concentrically aligned with the stationary stack stage to etch the stack and controlling the operation of the one or more ion beam grid assemblies to achieve substantial axial uniformity of the etched stack. | 01-03-2013 |
| 20130075366 | SURFACE PROFILE ADJUSTMENT USING GAS CLUSTER ION BEAM PROCESSING - A method of treating a workpiece is described. The method comprises computing correction data from metrology data related to a workpiece surface profile, adjusting the surface profile in accordance with the correction data using a gas cluster ion beam (GCIB), and further adjusting the surface profile by performing an etching process following the GCIB adjustment. | 03-28-2013 |
| 20130306597 | PROCESSING APPARATUS AND METHOD FOR PROCESSING METAL FILM - A method for processing a metal film includes adiabatically expanding a mixed gas including an oxidation gas, a complexing gas and a rare gas in a processing chamber having a vacuum exhaust device such that a gas cluster beam is generated in the processing chamber, and irradiating the gas cluster beam upon a metal film formed on a surface of a workpiece in the processing chamber such that the gas cluster beam collides on the metal film including a metal element and the metal film is etched. The mixed gas includes the oxidation gas which oxidizes the metal element and forms an oxide, and the complexing gas which reacts with the oxide and forms an organometallic complex | 11-21-2013 |
| 20140083976 | CLUSTER BEAM GENERATING APPARATUS, SUBSTRATE PROCESSING APPARATUS, CLUSTER BEAM GENERATING METHOD, AND SUBSTRATE PROCESSING METHOD - A cluster beam generating method that generates a cluster beam includes steps of mixing a gas source material and a liquid source material in a mixer; supplying a cluster beam including clusters originating from the gas source material and clusters originating from the liquid source material that are mixed in the mixer from a nozzle; and adjusting a temperature of the nozzle using a temperature adjusting portion that adjusts a temperature of the nozzle, thereby controlling a ratio of the clusters originating from the gas source material and the clusters originating from the liquid source material in the cluster beam. | 03-27-2014 |
| 20150014275 | SWITCHABLE ION GUN WITH IMPROVED GAS INLET ARRANGEMENT - A switchable ion gun switchable between a cluster mode setting for producing an ion beam substantially comprising ionised gas clusters and an atomic mode setting for producing an ion beam substantially comprising ionised gas atoms, comprising:
| 01-15-2015 |
| 20150021295 | PATTERN FORMING METHOD AND MASK PATTERN DATA - According to one embodiment, a pattern forming method includes: forming a guide layer, including a base layer and a neutralization film with a plurality of parallel line sections, on a processing target film, forming a polymer material containing first polymer segments and second polymer segments, on the guide layer, forming a self-assembly pattern having a plurality of first polymer portions containing the first polymer segment and extending in a direction of the line sections, and a plurality of second polymer portions containing the second polymer segment alternating with the first polymer portions and extending along the direction of the line sections, and selectively removing the second polymer portions. The widths of line sections of both ends of the plurality of line sections of the neutralization film are about two times the width of each first polymer portion or each second polymer portion. | 01-22-2015 |
| 20150041432 | SELF-SUSTAINED NON-AMBIPOLAR DIRECT CURRENT (DC) PLASMA AT LOW POWER - A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system. | 02-12-2015 |
| 20160018579 | POLARIZER BASED ON A NANOWIRE GRID - An array of nanowires with a period smaller then 150 nm can be used for applications such as an optical polarizer. A hard nanomask can be used to manufacture such structures. This nanomask includes a substantially periodic array of substantially parallel elongated elements having a wavelike cross-section. The fabrication method of the nanomask may be contactless and uses ion beams. | 01-21-2016 |
| 20160064197 | METHODS AND APPARATUS FOR CONTROLLING PHOTORESIST LINE WIDTH ROUGHNESS WITH ENHANCED ELECTRON SPIN CONTROL - The present disclosure provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region. | 03-03-2016 |
| 20160107191 | MAKING COLORED BIOCIDAL MULTI-LAYER STRUCTURE - A method of making a colored biocidal multi-layer structure includes providing a first layer of a first color and locating a biocidal second layer on or over the first layer. The biocidal second layer has a second color different from the first color. | 04-21-2016 |
| 20160111254 | Workpiece Processing Method And Apparatus - A system and method for processing a workpiece is disclosed. A plasma chamber is used to create a ribbon ion beam, extracted through an extraction aperture. A workpiece is translated proximate the extraction aperture so as to expose different portions of the workpiece to the ribbon ion beam. As the workpiece is being exposed to the ribbon ion beam, at least one parameter associated with the plasma chamber is varied. The variable parameters include extraction voltage duty cycle, workpiece scan velocity and the shape of the ion beam. In some embodiments, after the entire workpiece has been exposed to the ribbon ion beam, the workpiece is rotated and exposed to the ribbon ion beam again, while the parameters are varied. This sequence may be repeated a plurality of times. | 04-21-2016 |
| 20160189925 | APPARATUS AND METHOD FOR PROCESSING SUBSTRATE USING ION BEAM - A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed. | 06-30-2016 |
