| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117217000 |
Including heating or cooling details (e.g., shield configuration)
| 20 |
| 117209000 |
Including solid member shaping means other than seed or product (e.g., EDFG die)
| 8 |
| 117214000 |
Including details of precursor replenishment
| 6 |
| 117213000 |
Including a sectioned crucible (e.g., double crucible, baffle) | 4 |
| 20090308307 | CRUCIBLE PROTECTION SHEET AND CRUCIBLE APPARATUS USING THE CRUCIBLE PROTECTION SHEET - A crucible protection sheet is provided that can prevent damages to an inner crucible, hinder an outer crucible from silicon-carbidization, and transmit heat from the outer crucible to the inner crucible uniformly. | 12-17-2009 |
| 20110139064 | Graphite Crucible and Silicon Single Crystal Manufacturing Apparatus - A graphite crucible for silicon single crystal manufacturing by the Czochralski method, having a long life cycle, contains at least one gas venting hole provided in a corner portion of the crucible. Gas generated by reaction between the graphite crucible and a quartz crucible is released to the outside through the gas venting hole, and formation of SiC on the surface of the graphite crucible and deformation of the quartz crucible caused by the pressure of the generated gas are prevented. | 06-16-2011 |
| 20150144056 | CRYSTAL GROWING SYSTEMS AND CRUCIBLES FOR ENHANCING HEAT TRANSFER TO A MELT - A system for growing an ingot from a melt includes an outer crucible, an inner crucible, and a weir. The outer crucible includes a first sidewall and a first base. The first sidewall and the first base define an outer cavity for containing the melt. The inner crucible is located within the outer cavity, and has a central longitudinal axis. The inner crucible includes a second sidewall and a second base having an opening therein. The opening in the second base is concentric with the central longitudinal axis. The weir is disposed between the outer crucible and the inner crucible for supporting the inner crucible. | 05-28-2015 |
| 20160024684 | WEIR FOR INHIBITING MELT CONTAMINATION - A system for growing a crystal ingot from a melt is provided. The system includes a first crucible, a barrier, and a shield. The first crucible has a first base and a first sidewall forming a first cavity for containing the melt. The barrier is disposed within the first cavity of the first crucible to inhibit movement of the melt from outward of the barrier to inward of the barrier. The barrier extends from the first base to above the melt. The barrier has an inner arm and an outer arm extending upward to form a channel therebetween. The shield extends downward between the inner arm and the outer arm to inhibit passage of contaminants. | 01-28-2016 |
| 117216000 |
Including a fully-sealed or vacuum-maintained crystallization chamber (e.g., ampoule) | 3 |
| 20090031945 | SINGLE CRYSTAL AND SEMICONDUCTOR WAFER AND APPARATUS AND METHOD FOR PRODUCING A SINGLE CRYSTAL - The disclosure relates to an apparatus and a method for producing a single crystal of semiconductor material. The apparatus comprises a chamber and a crucible which is arranged in the chamber and is enclosed by a crucible heater, a radiation shield for shielding a growing single crystal and thermal insulation between the crucible heater and an inner wall of the chamber. The apparatus may include a resilient seal which seals a gap between the inner wall and the thermal insulation and forms an obstacle for the transport of gaseous iron carbonyls to the single crystal. The disclosure also relates to a method for producing a single crystal of semiconductor material by using the apparatus, the single crystal which is produced and a semiconductor wafer cut therefrom. The single crystal and the semiconductor wafer are distinguished by an edge region, which extends from the circumference to a distance of up to R-5 mm radially into the single crystal or the semiconductor wafer and has an iron concentration, wherein the iron concentration in the edge region is less than 1*10 | 02-05-2009 |
| 20090158996 | APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON - An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium. | 06-25-2009 |
| 20120266808 | SIDE FEED SYSTEM FOR CZOCHRALSKI GROWTH OF SILICON INGOTS - A Czochralski growth system comprising a growth chamber, an isolation valve, a feed chamber containing feedstock, and a feeder is described. The isolation valve is disposed in at least one side wall of the growth chamber, and the feed chamber is vacuum sealed to the growth chamber through the isolation valve. The feeder is insertable into the growth chamber through the isolation valve and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method. | 10-25-2012 |
| 117218000 |
Including details of means providing product movement (e.g., shaft guides, servo means) | 2 |
| 20110132257 | SILICON SINGLE CRYSTAL PULL-UP APPARATUS - A silicon single crystal pull-up apparatus is used to pull up a doped silicon single crystal from a melt by means of the Czochralski process and includes a pull-up furnace, a sample chamber which is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding means for thermally isolating the interior of the pull-up furnace and the interior of the sample chamber, a sample tube which can be raised and lowered between the interior of the sample chamber and the interior of the pull-up furnace, and a raising and lowering means which is provided with guide rails on which the sample tube can slide and a wire mechanism by which the sample tube is raised and lowered along the guide rails. | 06-09-2011 |
| 20150114286 | Pulling Head Having a Magnetic Drive - A pulling head for a crystal growth furnace. The pulling head includes a servomotor and a rotatable housing attached to the servomotor, wherein the housing includes first, second, third and fourth housing magnets. The pulling head also includes a shaft attached to a scale and a connection device having first and second connection magnets. The first connection magnet is arranged between the first and second housing magnets to generate first and second magnetic repulsion forces and the second connection magnet is arranged between the third and fourth housing magnets to generate third and fourth magnetic repulsion forces. A rotation coupling is attached between the shaft and the connection device wherein the scale weighs the shaft, rotation coupling and the connection device. The servomotor rotates the housing and rotation of the housing is transmitted by the magnetic repulsion forces to the connection device to rotate the connection device. | 04-30-2015 |
| 117215000 |
Including sealing means details | 2 |
| 20150114285 | Crystal Growth Chamber With O-Ring Seal For Czochralski Growth Station - A growth chamber or a Czochralski crystal growth station has one or more re-sealable caps that are inserted into the chamber body. An O-ring seals the cap within its mating portion of the chamber body. The re-sealable caps facilitate re-use of the chamber body for a future crystal growth cycle. | 04-30-2015 |
| 20160083864 | CRYSTAL PULLER FOR INHIBITING MELT CONTAMINATION - A crystal puller for growing a crystal ingot includes a housing, insulation, a crucible assembly, a heat shield, and a dust barrier. The housing encloses a growth chamber, and has an upper wall with an inner surface and an aperture. The insulation separates an inside of the housing into an upper area and a lower area, and has a central opening. The crucible assembly is within the lower area to contain the melt. The heat shield is adjacent the central opening of the insulation, and forms a labyrinth gas path with the crucible assembly. The dust barrier extends from the inner surface of the upper wall to one of the insulation and the heat shield, and forms a seal with the upper wall around the aperture to inhibit particles from entering the growth chamber through the upper area of the housing. | 03-24-2016 |
| Entries |
| Document | Title | Date |
|---|
| 20090145351 | VITREOUS SILICA CRUCIBLE - The present invention relates to a vitreous silica crucible for pulling up silicon single crystals by a pulling-up process having a first stage and a second stage after the first stage. The crucible comprises a transparent inner layer containing inner layer bubbles, and an outer layer containing outer layer bubbles. The second stage expansion coefficient X | 06-11-2009 |
| 20090173276 | HIGH-PURITY VITREOUS SILICA CRUCIBLE USED FOR PULLING LARGE-DIAMETER SINGLE-CRYSTAL SILICON INGOT - A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter. | 07-09-2009 |
| 20090272315 | SILICA GLASS CRUCIBLE - A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer. | 11-05-2009 |
| 20090293806 | SILICA GLASS CRUCIBLE AND METHOD FOR MANUFACTURING THE SAME - A silica glass crucible for pulling up a silicon crystal related to the present invention includes a roundness Sx of an interior surface of the silica glass crucible and a roundness Sy of an exterior surface of the silica glass crucible in at least a wall part of the silica glass crucible both being 0.4 or less (Sx/M≦0.4, Sy/M≦0.4) to a maximum thickness M in the same measurement height as the roundness. | 12-03-2009 |
| 20090308306 | CRUCIBLE HOLDING MEMBER AND METHOD FOR PRODUCING THE SAME - A crucible holding member includes a mesh body having an axis direction. The mesh body includes a hollow, an opening, and a plurality of strands. The hollow is provided inside the opening. The opening faces toward one end of the axis direction. The plurality of strands include a plurality of carbon fibers and are woven diagonally with respect to the axis direction to provide the hollow and the opening. The plurality of strands are folded inwardly or outwardly at an edge of the opening, thereby providing a two-layered portion along the edge of the opening. A matrix is filled between the plurality of carbon fibers of the mesh body. | 12-17-2009 |
| 20100000465 | METHOD FOR PRODUCING VITREOUS SILICA CRUCIBLE - A method is provided for producing a vitreous silica crucible having excellent shape formability and fewer internal bubbles without excessively heating the curved portion and the bottom part. The method comprises arc melting a quartz powder molded product loaded in a rotating mold while performing vacuum suction, wherein the electrode is moved sideways with respect to the mold center line upon the initiation of arc melting or during the arc melting, and the arc melting is performed at an eccentric position, and preferably the time for total heating is limited to 60% or less of the total arc melting time. A vitreous silica crucible produced by this method is also provided. | 01-07-2010 |
| 20100071613 | METHOD AND APPARATUS FOR MANUFACTURING FUSED SILICA CRUCIBLE, AND THE FUSED SILICA CRUCIBLE - A method of manufacturing a fused silica crucible by heating and melting a vitreous silica powder compact shaped into a mold using arc discharge of electrodes arranged around a rotation shaft of the mold, includes the steps of: arranging the electrodes in a ring shape, and setting a ratio W/R of a horizontal distance W between the electrode front end and the surface of the vitreous silica powder compact to a vitreous silica powder compact opening radius R, for at least a predetermined time during arc heating, to be in the range of 0.002 to 0.98. | 03-25-2010 |
| 20100107970 | SILICA GLASS CRUCIBLE HAVING MULTILAYERED STRUCTURE - Disclosed is a silica glass crucible employed in pulling silicon single crystals. The crucible comprises at least a transparent layer, semitransparent layer, and opaque layer disposed from the inner surface side to the outer surface side of the crucible. The content of bubbles in the transparent layer is less than 0.3 percent; the content of bubbles in the semitransparent layer falls within a range of from 0.3 to 0.6 percent; and the content of bubbles in the opaque layer is greater than 0.6 percent. | 05-06-2010 |
| 20100116198 | METHOD OF PROTECTING CARBONACEOUS CRUCIBLE AND SINGLE-CRYSTAL PULLING APPARATUS - A method is provided of protecting a carbonaceous crucible that is easy to handle, reduces work hour, and can cover the inner surface of a crucible without breaking the sheet and without gaps. A single-crystal pulling apparatus is also provided. The method of protecting a carbonaceous crucible by interposing a protective sheet made of an expanded graphite material between a quartz crucible and a carbonaceous crucible on which the quartz crucible is placed, including: laying two or more protective sheet pieces on an inner surface of the carbonaceous crucible, each of the protective sheet pieces having such a shape that the protective sheet pieces are combined integrally to form the protective sheet in laying the protective sheet between the crucibles. | 05-13-2010 |
| 20100132609 | QUARTZ GLASS CRUCIBLE FOR SILICON SINGLE CRYSTAL PULLING OPERATION AND PROCESS FOR MANUFACTURING THE SAME - A quartz glass crucible for silicon single crystal pulling operation that by a simple arrangement, attains prevention of any collapse onto the inside at a superior edge of straight trunk part; and a process for manufacturing the same. The quartz glass crucible for silicon single crystal pulling operation having a straight trunk part and a bottom part, is characterized in that at least the straight trunk part is provided with a gradient of fictive temperature so that the fictive temperature on the outermost side thereof is 25° C. or more lower than the fictive temperature on the innermost side thereof. | 06-03-2010 |
| 20100147213 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible for pulling up a silicon single crystal including an outer layer formed from a natural silica glass layer, and an inner layer formed from a synthetic silica glass layer, wherein the synthetic silica glass layer includes a first synthetic silica glass layer formed in a region within a certain range from the center of a crucible bottom section, and a second synthetic silica glass layer formed in a region which excludes the formation region of the first synthetic silica glass layer, and wherein the first synthetic silica glass layer has a thickness of 0.5 mm or more and 1.5 mm or less and a concentration of an OH group included in the first synthetic silica glass layer being 100 ppm or less. | 06-17-2010 |
| 20100154701 | SILICA CRUCIBLE WITH PURE AND BUBBLE FREE INNER CRUCIBLE LAYER AND METHOD OF MAKING THE SAME - A method of making a silica crucible in a mold cavity of the type in which air is drawing through silica grain placed in the mold cavity. A pure silica grain layer is formed on top of a natural silica grain layer. At least a portion of the purse silica grain layer is fused while substantially no air is drawn through the silica grain. Any remaining pure silica grain and a least a portion of the natural silica grain layer is fused while drawing a substantially higher volume of air through the silica. At least a portion of the fused pure silica grain layer is then sublimated. | 06-24-2010 |
| 20100154702 | SURFACE MODIFIED QUARTZ GLASS CRUCIBLE, AND ITS MODIFICATION PROCESS - A surface modified quartz glass crucible and a process for modifying the crucible includes a layer of a metal oxide on the whole or a part of the inside and/or outside of the crucible, and baking it. At least an inside surface of the crucible is coated with a said metal oxide of magnesium, calcium, strontium or barium. The coated layer of the crucible does not abrade easily and provides a high dislocation free ratio of silicon single crystals pulled by using the crucible. | 06-24-2010 |
| 20100154703 | SILICA GLASS CRUCIBLE - To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature. | 06-24-2010 |
| 20100170432 | APPARATUS FOR PULLING SILICON SINGLE CRYSTAL - An apparatus for pulling a silicon single crystal, comprising: a crucible that stores a silicon melt; a heater that heats the crucible; a crucible driving unit for rotating and/or lifting up and down the crucible; a chamber that holds the crucible and the heater; and a magnetic field applying unit that is provided outside the chamber and applies a magnetic field to the chamber, wherein the magnetic field applying unit is formed along the outer peripheral surface of the chamber such that substantially concentric circle-shaped equi-strength lines of the magnetic field are formed about a center axis of the crucible. | 07-08-2010 |
| 20100186662 | CRUCIBLE HAVING A DOPED UPPER WALL PORTION AND METHOD FOR MAKING THE SAME - A fused glass crucible includes a collar of doped aluminum silica that defines uppermost and outermost surfaces of the crucible. The melt line that defines the surface of molten silicon in the crucible may be substantially at the lower end of the collar or slightly above it. Crystallization of the collar makes it hard and therefore supports the remaining uncrystallized portion of the crucible above the melt line. The melt line may also be below the lower end of the collar, especially if the melt is drawn down or poured early in the process. Because there is little or no overlap or because the overlap does not last long, the doped aluminum collar is not damaged by the heat of from the melt. | 07-29-2010 |
| 20100192841 | REINFORCING METHOD OF SILICA GLASS SUBSTANCE AND REINFORCED SILICA GLASS CRUCIBLE - A process reinforcing a silica glass substance, such as a silica glass crucible, is provided without intermixing an impurity. The process comprises forming a silica glass powder layer on a surface of the silica glass substance, and crystallizing said silica glass powder layer under high temperature. As for a silica glass crucible, the process for reinforcing the silica glass crucible and the reinforced silica glass crucible are provided, wherein the silica glass powder layer on the whole or a part of the surface of the crucible is formed and then, crystallized under a temperature at the melting of a silicon raw material being charged into said quartz glass crucible. | 08-05-2010 |
| 20100236473 | VITREOUS SILICA CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON AND METHOD OF MANUFACTURING THE SAME - In order to provide a vitreous silica crucible which does not employ a crystallization accelerator but is difficult to deform during its use even under high temperature, and is easily manufactured, there is provided a vitreous silica crucible for pulling single-crystal silicon wherein the outer surface layer is formed of a bubble-containing vitreous silica layer, the inner surface layer is formed of a vitreous silica layer whose bubbles are invisible to the naked eye, a surface of the outer surface layer includes an unmelted or half-melted silica layer (abbreviated as a half-melted silica layer), and the center line average roughness (Ra) of the half-melted silica layer is 50 to 200 μm, also preferably, and the thickness of the half-melted silica layer is 0.5 to 2.0 mm. | 09-23-2010 |
| 20100251959 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL - Provided is a vitreous silica crucible for pulling silicon single crystals, which can melt a silicon raw material in a short time and improve production yield of silicon single crystals by temporal change of an opaque vitreous silica layer. The vitreous silica crucible includes an opaque vitreous silica layer( | 10-07-2010 |
| 20110011333 | APPARATUS FOR MANUFACTURING GROUP III NITRIDE CRYSTALS - An apparatus for producing group III nitride crystals includes a pressure container, a reaction vessel positioned in the pressure container, a supplier for supplying an interior of the pressure container with nitrogen gas and nitrogen mixed gas at 1 to 20 MPa, a heater for heating the reaction vessel in the pressure container to at least 700° C., a power unit, a seed crystal arrangement for holding a plurality of seed crystal substrates, a dry box part disposed outside the pressure container, and raising/lowering and rotational axes disposed outside the pressure container. | 01-20-2011 |
| 20110011334 | SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF PRODUCING THE SAME - There is provided a silica crucible for pulling a silicon single crystal, comprising silica glass and having a two-layer structure of an outer layer and an inner layer, wherein the inner layer, in a sectional side view of the crucible, has a wavy inner surface shape having mountain parts and valley parts at least between a start position and an end position for the pulling of a silicon single crystal in a silicon melt surface, and when a distance from an upper opening end of the crucible to the start position for the pulling of the silicon single crystal is 100, only a crucible portion from the upper opening end to a position within a range of 40 to 100 is crystalline. | 01-20-2011 |
| 20110017128 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME - Provided are a vitreous silica crucible which enables, during pulling, crystallization promotion of the inner surface and retention of the crucible strength, and a method of manufacturing the same. The vitreous silica crucible | 01-27-2011 |
| 20110023773 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME - Provided is a vitreous silica crucible for pulling a silicon single crystal, having an inner surface layer which is excellent in uniformity and has a low bubble content rate, and a method of manufacturing the same. Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal comprising the step of forming an inner surface layer | 02-03-2011 |
| 20110079175 | IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME - Provided are a quartz crucible and a method of manufacturing the quartz crucible. The quartz crucible is used in a single crystal growth apparatus. The quartz crucible comprises an inner layer including silica, and an outer layer including silica disposed outside the inner layer to surround the inner layer, wherein nitrogen is added in the silica of the outer layer. | 04-07-2011 |
| 20110174214 | CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHOD - To provide a crystal growing apparatus and a crystal growing method capable of enabling use of a quartz crucible for a longer period of time and improving operation rate. | 07-21-2011 |
| 20120031325 | Crystal Growth Crucible Lid - A lid for a crystal growth chamber crucible is constructed by forming arcuate sector-shaped portions and coupling them in abutting relationship, for example by welding, to form an annular profile fabricated lid. The arcuate sector-shaped portions may be formed and removed from a lid fabrication blank with less waste than when unitary annular lids are formed and removed from a similarly sized fabrication blank. For example, the sector-shaped portions may be arrayed in an undulating pattern on the fabrication sheet. | 02-09-2012 |
| 20120037069 | METHOD OF EVALUATING SILICA POWDER, VITREOUS SILICA CRUCIBLE, AND METHOD OF MANUFACTURING VITREOUS SILICA CRUCIBLE - The present invention provides a method of evaluating silica powder which, enables precise prediction of easiness of crystallization of a vitreous silica crucible. According to the present invention, provided is a method of evaluating silica powder including a sample preparation process for preparing a vitrified sample by fusing silica powder at a fusing temperature of 1700 to 1900 deg. C., followed by cooling; a sample heat treatment process for retaining the sample for 30 minutes or more at a temperature of 1400 to 1750 deg. C., followed by cooling; and a sample evaluation process for evaluating a state of opacification of the sample after the sample heat treatment process. | 02-16-2012 |
| 20120103251 | SEED CRYSTAL AXIS FOR SOLUTION GROWTH OF SINGLE CRYSTAL - PROBLEM To provide a seed crystal axis for solution growth of single crystal able to prevent or suppress formation of polycrystals due to the liquid phase technique and grow a single crystal with a high growth rate. | 05-03-2012 |
| 20120125257 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible having a reference point, which is capable of accurately detecting the location of a defect in the vitreous silica crucible used for pulling silicon single crystal, determining a defect generating site of silicon single crystal, and investigating the cause of the defect. The reference point used for specifying the position relationship with respect to a particular part is formed in at least one site of an end portion, an inner wall and an outer wall of the crucible. | 05-24-2012 |
| 20120132133 | VITREOUS SILICA CRUCIBLE - The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible without fear of mixing of impurities into silicon melt. According to the present invention, provided is a vitreous silica crucible for pulling a silicon single crystal, wherein a ratio I2/I1 is 0.67 to 1.17, where I1 and I2 are area intensities of the peaks at 492 cm | 05-31-2012 |
| 20120137963 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible, which is resistant to deformation and corrosion even when heated at high temperature for a long time. There is provided a vitreous silica crucible of the present invention including a substantially cylindrical straight body portion, a curved bottom portion, and a corner portion smoothly connecting the straight body portion and the bottom portion, wherein a wall of the vitreous silica crucible includes, from an inner surface side, a transparent layer and a bubble-containing layer, and a ratio of a thickness of the bubble-containing layer with respect to a thickness of the transparent layer at an intermediate position between an upper end and a lower end of the straight body portion is 0.7 to 1.4. | 06-07-2012 |
| 20120137964 | VITREOUS SILICA CRUCIBLE - The present invention provides a vitreous silica crucible which can suppress buckling and sidewall lowering of the crucible and the generation of cracks. According to the present invention, a vitreous silica crucible is provided for pulling a silicon single crystal having a wall, the wall including a non-doped inner surface layer made of natural vitreous silica or synthetic vitreous silica, a mineralizing element-maldistributed vitreous silica layer containing dispersed island regions each containing a mineralizing element, and wherein the vitreous silica of the island regions and the vitreous silica of a surrounding region of the island regions is a combination of mineralizing element-doped natural vitreous silica and non-doped synthetic vitreous silica, or a combination of mineralizing element-doped synthetic vitreous silica and non-doped natural vitreous silica, and the inner surface layer is made of vitreous silica of a different kind from that of the island region. | 06-07-2012 |
| 20120137965 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL - There is provided a vitreous silica crucible whose strength at high temperature is high, and which allows easy taking-out from a susceptor after completion of pulling. The vitreous silica crucible | 06-07-2012 |
| 20120160159 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME - The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible | 06-28-2012 |
| 20120255487 | VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME - Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal which can suppress melt surface vibration of silicon melt filled therein and has a long lifetime. The crucible includes a peripheral wall portion, a curved portion and a bottom portion, and has a plurality of micro recesses on the specific region of the inner surface of the peripheral wall portion. | 10-11-2012 |
| 20120260852 | VITREOUS SILICA CRUCIBLE - Provided is a vitreous silica crucible which has a special region for suppressing vibration of melt surface during pulling of a silicon single crystal and at the same time, a marking capable of accurately monitoring a changed position of the melt surface when passing through the special region. The special region for preventing sloshing of silicon melt is provided on an inner wall of a straight body portion, and the marking is provided at least at an upper end and a lower end of the special region. | 10-18-2012 |
| 20120285372 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL, AND METHOD FOR MANUFACTURING THE SAME - Provided is a vitreous silica crucible for pulling a silicon single crystal, which stably suppresses surface vibration of a silicon melted solution filled therein and has a long life, and a method for manufacturing the same. The vitreous silica crucible for pulling a silicon single crystal includes a peripheral wall portion, a curved portion, and a bottom portion, wherein a plurality of minute concave portions are formed on a certain area of an inner surface of the peripheral wall portion, and a plurality of bubbles are formed on a lower position of the minute concave portions. | 11-15-2012 |
| 20120291699 | CRUCIBLES MADE WITH THE COLD FORM PROCESS - A crucible for growing crystals, the crucible being formed from Molybdenum and Rhenium. A crucible for growing crystals, the crucible being formed from a metal selected from Group V of the Periodic Table of the Elements. A crucible for growing crystals, the crucible comprising a body and a layer formed on at least a portion of the body, the layer being formed out of Molybdenum. | 11-22-2012 |
| 20130087094 | Composite Crucible For Crystal Growth - A composite crucible comprising an iridium alloy sidewall and an iridium bottom. The iridium alloy is selected from the group consisting of iridium, rhenium, rhodium and tungsten. In some embodiments the iridium alloy comprises about 99 to 95 parts iridium and about 1 to 5 five parts rhenium. The crucible can be fabricated by rolling a flat sheet of iridium alloy into a cylinder and affixing an iridium circular bottom to one end of the cylinder. Seams can be welded to complete the composite crucible structure. | 04-11-2013 |
| 20130160703 | CARBON CRUCIBLE - A carbon crucible prevents leakage of SiO gas from a boundary portion between a straight trunk portion and a tray portion and prevents SiC formation from quickly developing. A carbon crucible ( | 06-27-2013 |
| 20130247818 | SILICA CRUCIBLE AND METHOD FOR FABRICATING THE SAME - A silica crucible and a fabricating method thereof are provided. The silica crucible includes a vitreous silica body having an inner surface and an outer surface, the inner surface of the vitreous silica body defining a cavity adapted for containing a molten material or a powder material; and a first coating layer formed on the inner surface of the vitreous silica body. The first coating layer is formed by pyrolysing a composite of aluminum, magnesium, calcium, titanium, zirconium, radium, chromium, selenium, barium, yttrium, cerium, hafnium, tantalum, tin or silicon under a predetermined temperature. The first coating layer substantially includes of a nonhomogeneous material, and an interface is defined by the homogeneous material and the nonhomogeneous material between the vitreous silica body and the coating layer. The first coating layer has strong adhesion capability and guarantees the coating layer will not be easily peeled off or removed. | 09-26-2013 |
| 20130305984 | GRAPHITE CRUCIBLE FOR SINGLE CRYSTAL PULLING APPARATUS AND METHOD OF MANUFACTURING SAME - A graphite crucible ( | 11-21-2013 |
| 20140041575 | SILICA CONTAINER FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR PRODUCING THE SAME - The present invention is directed to a silica container for pulling single crystal silicon, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the outside of the silica container is made of opaque silica glass containing gaseous bubbles, the inside of the silica container is made of transparent silica glass containing substantially no gaseous bubble, and, on the inner surface of the bottom portion, a silica glass layer containing the OH group in a concentration of more than 300 ppm by mass but 3000 ppm by mass or less, the silica glass layer having a thickness of 20 μm or more but 1000 μm or less, is formed. As a result, a low-cost silica container for pulling single crystal silicon, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided. | 02-13-2014 |
| 20140053772 | SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND MANUFACTURING METHOD THEREOF - The present invention provides a single-crystal silicon pulling silica container including an outer layer made of opaque silica glass containing gaseous bubbles and an inner layer made of transparent silica glass that does not substantially contain the gaseous bubbles; the container also including: a bottom portion, a curved portion, and a straight body portion, wherein continuous grooves are formed on a surface of the inner layer from at least part of the bottom portion to at least part of the straight body portion through the curved portion. As a result, there are provided the single-crystal silicon pulling silica container that can reduce defects called voids or pinholes in the pulled single-crystal silicon and a method for manufacturing such a silica container. | 02-27-2014 |
| 20140060422 | METHOD OF LOADING A CHARGE OF POLYSILICON INTO A CRUCIBLE - A method of loading a crucible includes loading a first layer of polysilicon chunks into the crucible and loading a second layer of granular polysilicon into the crucible to form a polysilicon charge such that the packing density of the polysilicon charge within the crucible is greater than 0.70. | 03-06-2014 |
| 20140150714 | METHOD OF COATING QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL, AND QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL - A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 μm to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified. The surface may be covered by immersing the inner surface in a solution of the alkaline earth hydroxide. The heating may be performed before the crucible for growing silicon crystal is filled with a solid raw material to be melted. | 06-05-2014 |
| 20140150715 | SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND PRODUCING METHOD THEREOF - A single-crystal silicon pulling silica container includes: a transparent layer made of transparent silica glass in an inner side of the silica container, and an opaque layer made of opaque silica glass containing gaseous bubbles in an outer side of the silica container, wherein the transparent layer is constituted of a high-OH group layer that is placed in an inner surface side of the silica container and contains the OH group at a concentration of 200 to 2000 ppm by mass and a low-OH group layer that has the OH group concentration lower than that of the high-OH group layer, and Ba is applied to the inner surface of the high-OH group layer at a concentration of 25 to 1000 μg/cm | 06-05-2014 |
| 20140182510 | SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND PRODUCING METHOD THEREOF - A single-crystal silicon pulling silica container including: a transparent silica glass layer in the inner side of the silica container; and an opaque silica glass layer containing gaseous bubbles in the outer side of the silica container, wherein the transparent layer constitutes of a high-OH group layer placed on an inner surface side of the silica container containing the OH group at a concentration of 200 to 2000 ppm by mass and a low-OH group layer having the OH group concentration lower than the high-OH group layer containing Ba at a concentration of 50 to 2000 ppm by mass. Resulting in the silica container used for pulling single-crystal silicon, providing the silica container improves etching corrosion resistance of the container inner surface to silicon melt when the entire inner surface of transparent silica glass of the container is crystallized short after using the container and method for such silica container. | 07-03-2014 |
| 20140182511 | PROTECTIVE COATING TO PREVENT REACTION BETWEEN GRAPHITE SUSCEPTOR AND QUARTZ CRUCIBLE - A susceptor for supporting a crucible includes a body with an interior surface defining a cavity. A coating is disposed on the interior surface to provide a barrier for preventing contact between the body of the susceptor and the crucible disposed within the cavity. | 07-03-2014 |
| 20140283737 | SINGLE-CRYSTAL SILICON PULLING SILICA CONTAINER AND METHOD FOR PRODUCING THE SAME - The present invention is directed to a single-crystal silicon pulling silica container, the silica container including a straight body portion, a curved portion, and a bottom portion, wherein the OH group concentration in the straight body portion is 30 to 300 ppm by mass, the OH group concentration in the bottom portion is 30 ppm by mass or less, and the difference in the OH group concentration between the straight body portion and the bottom portion is 30 ppm by mass or more. As a result, a low-cost single-crystal silicon pulling silica container, the silica container that can reduce cavity defects called voids and pinholes in pulled single crystal silicon, is provided. | 09-25-2014 |
| 20150027364 | SILICA GLASS CRUCIBLE - Buckling of a vitreous silica crucible | 01-29-2015 |
| 20150114284 | SILICA CONTAINER FOR PULLING SINGLE CRYSTAL SILICON AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a silica container for pulling single crystal, the container having a straight body portion, a curved portion, and a bottom portion, wherein an outer side of the container is made of opaque silica glass containing bubbles, and an inner side of the container is made of transparent silica glass, and a mixed silica layer in which a phase in which a crystalline silica powder is fused and a phase in which an amorphous silica powder is fused are mixed in a granular texture is provided on at least an inner surface layer portion of the straight body portion. As a result, there is provided the silica container for pulling single crystal silicon which can suppress melt surface vibration of a silicon melt in the silica container at a high temperature. | 04-30-2015 |
| 20150136017 | CARBON CRUCIBLE AND METHOD OF MANUFACTURING SAME - A carbon crucible ( | 05-21-2015 |
| 20150337455 | COMPONENT, PARTICULARLY FOR USE IN A CRUCIBLE PULLING METHOD FOR QUARTZ GLASS, AND METHOD FOR PRODUCING SUCH A COMPONENT - The present invention refers to a method for producing a component by joining individual wall parts—especially for producing a melting crucible for use at a high operating temperature in a crucible pulling method for quartz glass, in that at least two wall parts of a refractory metal or of a base alloy of a refractory metal are provided, butt-joined to form a joint and joined together by sintering at a temperature above 1500° C. to form the component. To provide a component of improved tightness and to ensure improved sintering of the individual parts of the component, a sealant is inserted into the joint. | 11-26-2015 |
| 20150354092 | SINGLE-CRYSTAL GROWTH APPARATUS - Disclosed is a single-crystal growth apparatus including a chamber, a crucible provided in the chamber and configured to accommodate a melt that is a raw material for single-crystal growth, a heater disposed between the crucible and a side wall of the chamber and heating the crucible, and a crucible screen disposed on an upper end of the crucible, and the crucible screen has a bending member reflecting a radiant heat generated from the melt in the crucible to inside wall of the crucible. | 12-10-2015 |
| 20160108550 | VITREOUS SILICA CRUCIBLE FOR PULLING OF SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a vitreous silica crucible which inhibits a deformation even when used under a high temperature condition for a long time, and a method for manufacturing the same. The vitreous silica crucible comprises: a substantially cylindrical straight body portion having an opening on the top end and extending in a vertical direction, a curved bottom portion, and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein, the vitreous silica crucible comprises a transparent layer on the inside and a bubble layer on the outside thereof, a compressive stress layer in which compressive stress remains in the inner surface side of the transparent layer, and a tensile stress layer in which tensile stress remains and is adjacent to the compressive stress layer at a gradual rate of change of stress. | 04-21-2016 |
| 20160201216 | VITREOUS SILICA CRUCIBLE | 07-14-2016 |
| 20190145019 | QUARTZ GLASS CRUCIBLE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL USING QUARTZ GLASS CRUCIBLE | 05-16-2019 |
