Class / Patent application number | Description | Number of patent applications / Date published |
117217000 | Including heating or cooling details (e.g., shield configuration) | 20 |
20090173277 | COOLING STRUCTURE FOR BODY OF CRYSTAL-GROWING FURNACE - A cooling structure for the body of a crystal-growing furnace includes an upper body and a lower body. The upper body includes an outer upper shell and an inner upper shell, wherein an upper enclosing space is formed between the outer upper shell and the inner upper shell. The lower body includes an outer lower shell and an inner lower shell, wherein a lower enclosing space is formed between the outer lower shell and the inner lower shell. A plurality of water pipes are arranged, respectively, around the upper and the lower enclosing spaces, wherein plural spraying holes are provided on each of the water pipes. With the help of a pump, water from an outside water source is drawn through the spraying holes of the water pipes so as to cool down the body of the crystal-growing furnace. In adding an exhaust fan, warm air in the upper enclosing spaces can be driven out speedily. Further, in the upper and the lower enclosing spaces there are provided with emergent water pipes for showering more additional water to cool the body of the crystal-growing furnace in case of emergency such that further disaster can be avoided. | 07-09-2009 |
20090205565 | APPARATUS FOR MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE - The invention provides an apparatus for manufacturing good quality single-crystal silicon carbide stably without formation of cracks and the like, which apparatus comprises: at least a crucible for accommodating silicon carbide feedstock powder and seed crystal; heat insulation material installed around the crucible; and a heating device for heating the crucible, wherein the outer profile of the crucible includes at least one region of narrower diameter than a vertically adjacent region, insulation material is also installed in the space left by the diameter difference, and thickness of the insulation material at the narrower diameter region is greater than that of the insulation material at the vertically adjacent region. The apparatus for manufacturing single-crystal silicon carbide enables precise control of the temperature gradient inside the crucible, thereby enabling manufacture of good quality single-crystal silicon carbide. | 08-20-2009 |
20090211519 | Electrode anchoring structure in crystal-growing furnaces - An electrode anchoring structure in a crystal-growing furnace includes at least one graphite electrode pillar, at least one metal electrode pillar, at least one anchoring base, and at least one locking nut, wherein the graphite electrode pillar is engaged with a nut base of the metal electrode pillar, and the at least one metal electrode pillar is, through the anchoring base, is secured to furnace wall. Therefore, the at least one graphite electrode pillar acts both as weight support and electrical-conducting electrode. Since the flange welded on furnace wall has a greater area exposed to the atmosphere, a desirable cooling effect can be achieved, and temperature drop can be expedited if water spray is performed. The anchoring base is provided with a resilient washer, such that a resilient force can be employed to adjust loading of each graphite electrode pillar in an axial direction. | 08-27-2009 |
20090211520 | Crystal-growing furnace system with emergent pressure-release arrangement - A crystal-growing furnace system with an emergent pressure-release arrangement includes an isolated chamber and a furnace upper body. The top board is provided with an opening and three first guides, and the furnace upper body with a lower opening and three second guides, wherein the lower opening of the furnace upper body covers, correspondingly, on the opening of the top board. In case a crystal-growing furnace, combined oppositely by the furnace upper body and the furnace lower body, has an over-high internal pressure, the pressure will overcome the weight of, and lift up the furnace upper body. At this moment, the furnace upper body will slightly move upward and away from enclosing the furnace lower body, so that the over-high internal pressure in the furnace will be released immediately to prevent the furnace from being exploded and from resulting in public accidents. | 08-27-2009 |
20090249998 | Single crystal pulling apparatus - A single crystal pulling apparatus comprises: a chamber; a crucible disposed within the chamber for containing a melt; a water-cooling means disposed within the chamber in such a manner as surrounding a single crystal pulled up from the melt in the crucible; water piping for feeding cooling water to and discharging the same from the water-cooling means; and supporting arms connected to the chamber for supporting the water-cooling means, wherein the supporting arms are disposed between the single crystal and the water piping. According to this configuration, the supporting arms can prevent the water piping from being damaged in the event of fall and collapse of the single crystal due to failure of the seed neck portion or in the event of rupture of the single crystal due to thermal stress, for instance. | 10-08-2009 |
20100258050 | APPARATUS FOR PRODUCING SINGLE CRYSTAL - The present invention is an apparatus for producing a single crystal, growing the single crystal by the Czochralski method and comprising at least: a main chamber in which a crucible for accommodating a raw material melt and a heater for heating the raw material melt are arranged; a pulling chamber into which the grown single crystal is pulled and accommodated, the pulling chamber being continuously provided above the main chamber; and a cooling cylinder extending at least from a ceiling of the main chamber toward a surface of the raw material melt so as to surround the single crystal during pulling, the cooling cylinder being forcibly cooled with a cooling medium. As a result, there is provided an apparatus for producing a single crystal that can increase the growth rate of the single crystal by efficiently cooling the single crystal during the growth. | 10-14-2010 |
20110056430 | EQUIPMENT FOR GROWING SAPPHIRE SINGLE CRYSTAL - The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt. | 03-10-2011 |
20120000416 | SINGLE CRYSTAL COOLING APPARATUS AND SINGLE CRYSTAL GROWER INCLUDING THE SAME - Provided are a single crystal cooling apparatus and a single crystal grower including the same. The single crystal cooling apparatus includes an upper flange having a circular shape and a lower flange extending downward from the upper flange, the lower flange having a diameter less than that of the upper flange. | 01-05-2012 |
20120118228 | SAPPHIRE INGOT GROWER - Provided is a sapphire ingot grower. The sapphire ingot grower includes a chamber, a crucible disposed in the chamber to contain alumina melt, a heater disposed outside the crucible to heat the crucible, and a heat supply unit disposed over an ingot growing within the crucible to apply heat to the ingot. | 05-17-2012 |
20120186513 | KYROPOULOS SAPPHIRE SINGLE CRYSTAL GROWING APPARATUS USING ELLIPTIC CRUCIBLE - Disclosed is a sapphire single crystal growing apparatus using the Kyropoulos method, and more particularly, is a Kyropoulos sapphire single crystal growing apparatus using an elliptic crucible, which can increase the recovery rate by the elliptic crucible and anisotropic heating. | 07-26-2012 |
20120204784 | SINGLE-CRYSTAL MANUFACTURING APPARATUS - The present invention is a single-crystal manufacturing apparatus for manufacturing a single crystal ingot according to the Czochralski method comprising: a crucible that contains a raw material melt; a heater having a cylindrical heat generating portion that surrounds the crucible; a main chamber that accommodates the heater; a heater electrode that supports the heater and supplies current to the heater; and a heat insulating plate provided below the cylindrical heat generating portion of the heater, wherein the heat insulating plate is fixed to and supported by the heater electrode through an insulating stationary member, and an insulating support member is provided on an upper surface of the heat insulating plate at a position at which the insulating support member faces a lower end of the cylindrical heat generating portion. Its object is to provide a single-crystal manufacturing apparatus that can inhibit heater deformation and prevent deterioration of heat efficiency. | 08-16-2012 |
20120266809 | INSULATION DEVICE OF SINGLE CRYSTAL GROWTH DEVICE AND SINGLE CRYSTAL GROWTH DEVICE INCLUDING THE SAME - Provides are an insulation device of a single crystal growth device and a single crystal growth device including the same. The insulation device is installed inside a chamber of the single crystal growth device and the insulation device includes a plurality of insulation blocks that are spaced by a first distance. | 10-25-2012 |
20130014695 | Ring-Shaped Resistance Heater For Supplying Heat To A Growing Single CrystalAANM Knerer; DieterAACI HaimingAACO DEAAGP Knerer; Dieter Haiming DEAANM Schachinger; WernerAACI SimbachAACO DEAAGP Schachinger; Werner Simbach DE - A ring-shaped resistance heater for supplying heat to a growing single crystal, comprising: | 01-17-2013 |
20130220216 | METHOD AND AN APPARATUS FOR GROWING A SILICON SINGLE CRYSTAL FROM A MELT - Silicon single crystals are grown from the melt by providing the melt in a crucible; imposing a horizontal magnetic field on the melt; directing a gas between the single crystal and a heat shield to a melt free surface, and controlling the gas to flow over a region of the melt free surface extending in a direction substantially perpendicular to the magnetic induction. A suitable apparatus has a crucible for holding the melt; a heat shield surrounding the silicon single crystal having a lower end which is connected to a bottom cover facing a melt free surface and a non-axisymmetric shape with respect to a crucible axis, such that gas which is directed between the crystal and the heat shield to the melt free surface is forced to flow over a region of the melt which extends substantially perpendicular to the magnetic induction. | 08-29-2013 |
20130233241 | SINGLE CRYSTAL PULLING APPARATUS AND LOW HEAT CONDUCTIVE MEMBER USED FOR SINGLE CRYSTAL PULLING APPARATUS - A single crystal pulling apparatus ( | 09-12-2013 |
20130269601 | GRAPHITE HEATER - A graphite heater includes a main body, and a plurality of support portions. The main body includes a tubular portion and a plurality of terminal portions. The plurality of terminal portions extend outward along a central axis of the tubular portion. Each of the plurality of terminal portions has a first planar surface facing the central axis or facing an opposite side of the central axis. The plurality of support portions are each joined to each of the plurality of terminal portions. Each of the plurality of support portions has a second planar surface. The first planar surface and the second planar surface are joined through a carbon-based adhesion layer. | 10-17-2013 |
20150136018 | APPARATUS FOR MANUFACTURING SINGLE CRYSTAL - The present invention provides an apparatus for manufacturing a single crystal according to a Czochralski method, including: a crucible configured to contain a raw material melt; a cylindrical heater surrounding the crucible, the heater being configured to heat the raw material melt; a main chamber that accommodates the crucible and the heater; an electrode that is inserted from the bottom of the main chamber and supports the cylindrical heater, the electrode being configured to supply electric power to the heater; and a melt-leakage receiving tray disposed on the bottom of the main chamber, the tray being configured to receive the raw material melt leaking from the crucible, wherein a melt-leakage cover is disposed below the crucible and above the electrode, the cover being configured to prevent contact between the raw material melt leaking from the crucible and the electrode. | 05-21-2015 |
20160017514 | COOLING RATE CONTROL APPARATUS AND INGOT GROWING APPARUTS INCLUDING SAME - The present disclosure relates to an apparatus for growing an ingot from silicon melt contained in a crucible by using a seed crystal, the apparatus comprising a chamber including a lower portion for accommodating the crucible and an upper portion through which the growing ingot passes, and a cooling rate control unit which is disposed at the upper portion of the chamber to extend to the lower portion of the chamber and has a hole through which the growing ingot passes, wherein the cooling rate control unit comprises an insulation part for insulating the ingot, a cooling part disposed over the insulation part to cool the ingot, and a blocking part disposed between the insulation part and the cooling part to prevent heat exchange therebetween. | 01-21-2016 |
20160194783 | SILICON SINGLE CRYSTAL PULLING APPARATUS | 07-07-2016 |
20220136129 | CRYSTAL PULLING SYSTEMS HAVING FLUID-FILLED EXHAUST TUBES THAT EXTEND THROUGH THE HOUSING - Crystal pulling systems having a fluid-cooled exhaust tube are disclosed. The fluid-cooled exhaust tube extends through the reactor housing and into the reaction chamber. In some embodiments, the exhaust tube extends through the bottom of the crystal puller housing and through a bottom heat shield within the ingot puller housing. | 05-05-2022 |