| Entries |
| Document | Title | Date |
|---|
| 20080196656 | Crucible for the Crystallization of Silicon - A crucible and method for the crystallization of silicon utilize release coatings. The crucible is used in the handling of molten materials that are solidified in the crucible and then removed as ingots. The crucible does not require the preparation of a very thick coating at the end user facilities, is faster and cheaper to produce, presents an improved release effect and allows the production of silicon ingot without cracks. The crucible includes a base body, a substrate layer containing silicon nitride, an intermediate layer containing silica, and a surface layer containing silicon nitride, silicon dioxide and silicon. | 08-21-2008 |
| 20080216737 | CRYSTAL MANUFACTURING APPARATUS - A crystal manufacturing apparatus for manufacturing a group III nitride crystal includes a crucible that holds a mixed molten liquid including an alkali metal and a group III metal; a reaction vessel accommodating the crucible in the reaction vessel; a heating device that heats the crucible with the reaction vessel; a holding vessel having a lid that is capable of opening and closing, accommodating the reaction vessel and the heating device in the holding vessel; a sealed vessel accommodating the holding vessel in the sealed vessel, having an operating device that enables opening the lid of the holding vessel for supplying source materials into the crucible and taking out a manufactured GaN crystal under a sealed condition, and closing the lid of the holding vessel that is sealed in the sealed vessel, the sealed vessel including an inert gas atmosphere or a nitrogen atmosphere; and a gas supplying device for supplying a nitrogen gas to the mixed molten liquid through each of the vessels. | 09-11-2008 |
| 20080282971 | NITRIDE SINGLE CRYSTAL MANUFACTURING APPARATUS - The apparatus has a crucible for storing a solution; an inner container | 11-20-2008 |
| 20090000542 | APPARATUS FOR PRODUCING NITRIDE SINGLE CRYSTAL - It is disclosed an apparatus for growing a nitride single crystal using a flux containing an easily oxidizable substance. The apparatus has a crucible for storing the flux; a pressure vessel for storing the crucible and charging an atmosphere containing at least nitrogen gas; furnace materials disposed within the pressure vessel and out of the crucible; heaters attached to the furnace material; and alkali-resistant and heat-resistant metallic layers covering the furnace material. | 01-01-2009 |
| 20090013925 | Device for producing a block of crystalline material with modulation of the thermal conductivity - The device for producing a block of crystalline material from a bath of molten material comprises a crucible having a bottom and heat extraction means arranged under the crucible. It also comprises means for modulating the thermal conductivity fitted between the bottom of the crucible and the heat extraction means. The means for modulating the thermal conductivity comprise a plurality of plates made from thermally conducting material of low emissivity, parallel to the bottom of the crucible, and means for moving said plates closer to and away from one another. | 01-15-2009 |
| 20090188426 | Crystal-growing furnace with heating improvement structure - A crystal-growing furnace with a heating improvement structure includes a furnace body, a supporting table, a top heater, and a bottom heater. When the silicon material around the top heater is melted, molten silicon slurry will flow directly into the spacing among particles of the silicon material. This will expedite internal part of the silicon material to absorb energy. As a result, a desirable cycle will be established to expedite melting the whole silicon material in the crucible. The crucible is heated at the bottom thereof by the bottom heater directly so as to enhance efficiency in melting the silicon material in the crucible, and to save energy and time consumed by the crystal-growing furnace. Further, since both of the top and the bottom heaters are symmetrical with one another, the crucible can be heated uniformly. This not only saves energy and makes the heating job convenient, but also saves cost in manufacture. | 07-30-2009 |
| 20090205564 | Crystal-growing furnace system - A crystal-growing furnace system includes an isolated chamber, a furnace upper body, and a controller room, wherein the isolated chamber and the controller room are arrayed and isolated from each other. A door is provided between the controller room and the isolated chamber so as to isolate or communicate the controller room from or with the isolated chamber. The isolated chamber includes, among others, a top board, a furnace lower body, and a lifting device, wherein the lifting device moves the furnace lower body upward and closes the furnace upper body so as to form an enclosed crystal-growing furnace, or downward and departs from the furnace upper body. Because the isolated chamber and the controller room are arranged isolating from each other, noise, high temperature, and dust pollution can be isolated from the isolated room, so that personnel working in the controller room can be assured of safety and health. Moreover, since the furnace upper body is arranged outside of the isolated chamber, heat can be transpired directly to the atmosphere, without the need of huge air conditioning devices for cooling factory, and thus having merits both on energy saving and safety. | 08-20-2009 |
| 20090211518 | CRUCIBLE HOLDING MEMBER AND METHOD FOR PRODUCING THE SAME - A crucible holding member includes a hollow mesh body. The hollow mesh body has an upper end opening and a lower end opening, and includes a plurality of strands woven to be arranged diagonally to a central axis of the hollow mesh body. Each of the strands includes a plurality of carbon fibers. A matrix is filled in the interstices between the carbon fibers. | 08-27-2009 |
| 20090272314 | CRUCIBLE HOLDING MEMBER AND METHOD FOR PRODUCING THE SAME - A crucible holding member includes a crucible supporting portion and an external fitting member. The crucible supporting portion includes a plurality of divided graphite pieces longitudinally divided in parallel to an axis line of the crucible supporting portion and radially arranged. The external fitting member is circularly formed and fitted on a body portion of the crucible supporting portion to bind the divided graphite pieces in a circumferential direction. The external fitting member is made of a C/C composite. | 11-05-2009 |
| 20090277377 | CRUCIBLE FOR MELTING SILICON AND RELEASE AGENT USED TO THE SAME - The crucible for melting silicon according to the present invention is a crucible for melting silicon including a crucible main body including a heat-resistant member, and a protective film formed at least on an inner surface of the crucible main body, in which the protective film has a composition of SiO | 11-12-2009 |
| 20090288592 | CRUCIBLE HOLDING MEMBER AND METHOD FOR PRODUCING THE SAME - A crucible holding member includes a mesh body, a matrix, and a carbonaceous layer. The mesh body has a cylinder shape or a basket shape and is formed by weaving a plurality of strands to be aligned diagonally with respect to an axis line of the mesh body. Each of the strands includes a plurality of carbon fibers. The matrix is filled in interstices between the plurality of carbon fibers. A carbonaceous layer is provided on an inner circumferential surface of the mesh body and has a flat surface to contact with an outer circumferential surface of a crucible. | 11-26-2009 |
| 20100089312 | CRYSTAL GROWER WITH INTEGRATED LITZ COIL - An apparatus and method of manufacturing a crystal grower is disclosed. The crystal growing apparatus includes a receptacle constructed to receive a material selected to grow a crystal and an induction heater constructed to heat the material, with the induction heater comprising a Litz coil and a hose constructed to receive the Litz coil therein. The hose further comprises an inner liner formed of an electrically non-conductive material, a reinforcement layer surrounding the inner liner to provide structural reinforcement thereto, and an outer liner applied about the reinforcement layer to form an exterior of the hose. | 04-15-2010 |
| 20100095883 | GRAPHITE CRUCIBLE FOR SILICON ELECTROMAGNETIC INDUCTION HEATING AND APPARATUS FOR SILICON MELTING AND REFINING USING THE GRAPHITE CRUCIBLE - Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible. | 04-22-2010 |
| 20100132608 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 μm or more and 450 μm or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage. | 06-03-2010 |
| 20100162947 | SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF - A silica glass crucible used for pulling up a silicon single crystal and made from natural silica a raw material is provided with a region within a certain range from the center of a bottom section of the crucible and up to 0.5 mm deep from an inner surface and which substantially does not include gas bubbles, wherein an average value of a concentration of Al included in a region within the certain range from the center of the bottom section of the crucible and up to 0.5 mm deep from the inner surface is 30 ppm or more and 150 ppm or less. In the case where the inner layer of the crucible bottom section is formed in this way, dents in the inner surface are prevented and the generation of gas bubbles is reduced. | 07-01-2010 |
| 20100307406 | FLOATING ZONE MELTING APPARATUS - This invention provides a floating zone melting apparatus in which a sample rod especially having a large diameter can be stably melted with a certainty and the crystal being grown can retain a flat shape at the interface of the solid phase and the liquid phase, whereby a single crystal having a large diameter can be grown. | 12-09-2010 |
| 20110247550 | Apparatus for Making Epitaxial Film - An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications. | 10-13-2011 |
| 20120137962 | Gas supply device for use in crystal-growing furnace - The present invention relates to a gas supply device for use in a crystal-growing furnace. The gas supply device has an insulation layer enclosing a crucible, a gas inlet mounted in the insulation layer, and a gas exit formed in the insulation layer. A gas flow guide shield with an adjustable angle is disposed at the opening of the gas inlet, so that the free surface of the melt is blown by the guided gas flow in such a manner that the gas flow takes the impurity away from the free surface efficiently. As a result, the crystal ingot obtained by solidifying the melt will exhibit a reduced concentration of impurities and an improved crystal quality. | 06-07-2012 |
| 20130228120 | DEVICE AND METHOD FOR GROWING DIAMOND IN A LIQUID PHASE - A method of growing a diamond mass in a liquid growth medium. The liquid growth medium can include a carbon source, a diamond growth catalyst such as a diamond catalyst metal-rare earth element alloy or nanocatalyst, and a dissociated hydrogen of a hydrogen source. The carbon source provides carbon atoms for growing diamond and can include a diamond seed material for diamond growth. The molten liquid phase provides a diamond growth catalyst which allows the carbon to form diamond at the temperature and low pressure conditions discussed. Furthermore, the dissociated hydrogen acts as a concentrator for assembling carbon atoms at a relatively high concentration which mimicks, in some respects, diamond growth under more conventional high pressure processes without the high pressure. | 09-05-2013 |
| 20130319321 | METALLIC CRUCIBLES AND METHODS OF FORMING THE SAME - In various embodiments, a precursor powder is pressed into an intermediate volume and chemically reduced, via sintering, to form a metallic shaped article. | 12-05-2013 |
