| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117224000 | Including pressurized crystallization means (e.g., hydrothermal) | 7 |
| 20090013926 | PRESSURE VESSEL FOR GROWING SINGLE CRYSTALS - An object of the present invention is to manufacture single crystals of high quality on an industrial production scale by preventing impurities from being mixed in single crystals when the single crystals are produced by the solvothermal method. | 01-15-2009 |
| 20090301391 | Formable Sealant Barrier - In one embodiment of the present invention, an assembly for HPHT processing comprises a can with an opening. A powder mixture is disposed within the opening. A substrate is disposed within the opening adjacent the powder mixture. Paint is coated on a surface within the opening and opposite the powder mixture with respect to the substrate. A meltable sealant is disposed within the opening and opposite the substrate with respect to the surface and a cap is covering the opening. | 12-10-2009 |
| 20110220013 | REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Reactor designs for use in ammonothermal growth of group-III nitride crystals. Internal heating is used to enhance and/or engineer fluid motion, gas mixing, and the ability to create solubility gradients within a vessel used for the ammonothermal growth of group-III nitride crystals. Novel baffle designs are used for control and improvement of continuous fluid motion within a vessel used for the ammonothermal growth of group-III nitride crystals. | 09-15-2011 |
| 20120137966 | High Pressure Apparatus with Stackable Rings - A high pressure apparatus and related methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, at least one ceramic ring with one or more scribe marks and/or cracks present. The apparatus optionally has a metal sleeve containing each ceramic ring. The apparatus also has a high-strength enclosure, end flanges with associated insulation, and a power control system. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C., respectively. | 06-07-2012 |
| 20130340672 | USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTHERMAL GROWTH OF GROUP-III NITRIDE CRYSTALS - Boron-containing compounds, gasses and fluids are used during ammonothermal growth of group-III nitride crystals. Boron-containing compounds are used as impurity getters during the ammonothermal growth of group-III nitride crystals. In addition, a boron-containing gas and/or supercritical fluid is used for enhanced solubility of group-III nitride into said fluid. | 12-26-2013 |
| 20140190403 | METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA USING AN AUTOCLAVE - A method of growing high-quality, group-III nitride, bulk single crystals. The group III-nitride bulk crystal is grown in an autoclave in supercritical ammonia using a source material or nutrient that is a group III-nitride polycrystals or group-III metal having a grain size of at least 10 microns or more and a seed crystal that is a group-III nitride single crystal. The group III-nitride polycrystals may be recycled from previous ammonothermal process after annealing in reducing gas at more then 600° C. The autoclave may include an internal chamber that is filled with ammonia, wherein the ammonia is released from the internal chamber into the autoclave when the ammonia attains a supercritical state after the heating of the autoclave, such that convection of the supercritical ammonia transfers source materials and deposits the transferred source materials onto seed crystals, but undissolved particles of the source materials are prevented from being transferred and deposited on the seed crystals. | 07-10-2014 |
| 20160002817 | HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL - Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones. | 01-07-2016 |
