| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117011000 |
PROCESSES OF GROWTH FROM LIQUID OR SUPERCRITICAL STATE
| 561 |
| 117084000 |
FORMING FROM VAPOR OR GASEOUS STATE (E.G., VPE, SUBLIMATION)
| 372 |
| 117200000 |
APPARATUS
| 181 |
| 117004000 |
PROCESSES OF GROWTH FROM SOLID OR GEL STATE (E.G., SOLID PHASE RECRYSTALLIZATION)
| 28 |
| 117003000 |
PROCESSES OF GROWTH WITH A SUBSEQUENT STEP OF HEAT TREATING OR DELIBERATE CONTROLLED COOLING OF THE SINGLE-CRYSTAL
| 20 |
| 117002000 |
PROCESSES OF GROWTH WITH A SUBSEQUENT STEP ACTING ON THE CRYSTAL TO ADJUST THE IMPURITY AMOUNT (E.G., DIFFUSING, DOPING, GETTERING, IMPLANTING)
| 9 |
| 117001000 |
PROCESSES JOINING INDEPENDENT CRYSTALS | 4 |
| 20080282967 | Crystal Growth Method and Apparatus - A method for forming a uniformly oriented crystalline sheet, wherein a plurality of crystallites are introduced into a liquid. At least a portion of the crystallites float on the surface of the liquid, and are induced to self-orientate until they are uniformly oriented in a compact mosaic configuration, while their sintering is prevented. A uniformly oriented crystalline sheet is formed from the compact mosaic configuration, for example, by sintering the crystallites. An apparatus for forming a crystalline sheet includes a container containing a liquid, wherein a plurality of crystallites are introduced and at least a portion thereof float on the surface of the liquid without sintering. The apparatus also includes a flow unit for inducing a flow of the liquid which moves the floating crystallites, and self-orientation means for allowing self-orientation of the floating crystallites, without sintering, until the floating crystallites are uniformly oriented in a compact mosaic configuration, ready for forming a uniformly oriented crystalline sheet, for example, by sintering the crystallites. | 11-20-2008 |
| 20090114146 | Method for Manufacturing Semiconductor Device and Substrate Processing Apparatus - To provide a method for manufacturing a semiconductor device and a substrate processing apparatus which contribute to forming high-density nuclei. The method for manufacturing a semiconductor device according to the invention includes the steps of: carrying a wafer | 05-07-2009 |
| 20150027362 | SEED LAYERS AND PROCESS OF MANUFACTURING SEED LAYERS - This invention relates seed layers and a process of manufacturing seed layers for casting silicon suitable for use in solar cells or solar modules. The process includes the step of positioning tiles with aligned edges to form seams on a suitable surface, and the step of joining the tiles at the seams to form a seed layer. The step of joining includes heating the tiles to melt at least a portion of the tiles, contacting the tiles at both ends of at least one seam with electrodes, using plasma deposition of amorphous silicon, applying photons to melt a portion of the tiles, and/or layer deposition. Seed layers of this invention include a rectilinear shape of at least about 500 millimeters in width and length. | 01-29-2015 |
| 20160160389 | ARTIFICIAL CRYSTAL GROWTH METHOD - An artificial crystal growth method that includes applying a pressure that causes at least two substantially rectangular-parallelepiped-shaped crystal substrates to abut each other in an X-axis direction with crystallographic axis directions of the crystal substrates aligned with each other, and causing the at least two crystal substrates to grow an artificial crystal in a state where the pressure is being applied. | 06-09-2016 |
