Class / Patent application number | Description | Number of patent applications / Date published |
117214000 | Including details of precursor replenishment | 6 |
20110030612 | SINGLE-CRYSTAL MANUFACTURING APPARATUS - The present invention is a single-crystal manufacturing apparatus based on the Czochralski method having a main chamber configured to accommodate hot zone components including a crucible, and a pull chamber configured to accommodate and take out a single crystal pulled from a raw material melt, the apparatus further comprising a multipurpose chamber interchangeable with the pull chamber, wherein a heating means for heating a raw material charged into the crucible and a cooling means for cooling the hot zone components after pulling the single crystal are placeable in the multipurpose chamber respectively. As a result, there is provided a single-crystal manufacturing apparatus that enables, in manufacture of a single crystal of a large diameter, e.g., approximately 200 mm or more, an operating rate of the single-crystal manufacturing apparatus and productivity of the single crystal to be improved. | 02-10-2011 |
20120285373 | Feed Tool For Shielding A Portion Of A Crystal Puller - A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section. | 11-15-2012 |
20130098290 | SIDE FEED SYSTEM FOR CZOCHRALSKI GROWTH OF SILICON INGOTS - A Czochralski growth system is described comprising a growth chamber, a feed port, and a feed chamber comprising a container for feedstock and a feeder. The feed port is disposed in at least one side wall of the growth chamber, and the feed chamber is attached to the growth chamber at the feed port. The feeder is insertable into the growth chamber through the feed port and supplies the feedstock into the growth chamber. Preferably this system can be used for producing silicon ingots using a continuous Czochralski method. | 04-25-2013 |
20130220215 | Controlled gravity feeding czochralski apparatus with on the way melting raw material - A melting furnace is mounted adjacent a growth furnace in which a single crystal ingot is pulled from the melt according to the Czochralski method. The melting furnace comprises a receiving container for melting therein raw material in a particle or powder form falling in it from a feeder. The receiving container accommodates a set of slope-wise plates providing a distributed sliding of partially melted raw material particles over the surface of these plates and their complete melting while moving downward; eventually the melted raw material flows into the crucible of the growth furnace through a heated conveying tube extending slantingly from the conical bottom of the receiving container to the crucible through coaxial openings in housings of both furnaces. The rate of feeding is defined solely by a feeder, and at continuous feeding the raw material flows continuously by gravity from the feeder to the crucible of the growth furnace, first in a solid state (powder, granules, pellets, etc.) and then in a liquid state. | 08-29-2013 |
20140360428 | RECHARGING APPARATUS - A recharging apparatus is disclosed. The recharging apparatus includes a body provided with an introduction port and a discharge port, a cover unit including a plurality of divided covers, each of the covers being connected to one end of the body and adapted to rotated about the one end of the body, and an opening and closing adjuster to support one surface of each of the covers and to rotate each of the covers about a portion of each of the covers connected to the one end of the body. | 12-11-2014 |
20150354088 | LIQUID DOPING SYSTEMS AND METHODS FOR CONTROLLED DOPING OF SINGLE CRYSTAL SEMICONDUCTOR MATERIAL - A doping system for introducing liquid dopant into a melt of semiconductor or solar-grade material includes a dopant reservoir for holding dopant and a feeding tube. The dopant reservoir includes a body and a tapered end defining an opening having a smaller cross-sectional area than a cross-sectional area of the body. The feeding tube includes a first end extending from the opening of the reservoir, a second end distal from the first end, an angled tip disposed at the second end of the feeding tube, a first restriction for inhibiting the passage of solid dopant through the feeding tube, and a second restriction for controlling the flow of liquid dopant, the second restriction disposed near the second end of the feeding tube. | 12-10-2015 |