| Entries |
| Document | Title | Date |
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| 20080223286 | Method for producing a semiconductor crystal - Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction. | 09-18-2008 |
| 20080251008 | Substrate Processing Apparatus and Semiconductor Device Producing Method - Disclosed is a hot wall type substrate processing apparatus, including a processing chamber which is to accommodate at least one product substrate therein; a heating member which is disposed outside of the processing chamber and which is to heat the product substrate; a processing gas supply system connected to the processing chamber; and an exhaust system, wherein with a member from which a Si film is exposed being disposed such as to be opposed to a surface on which selective growth is to be effected of the product substrate, an epitaxial film including Si is allowed to selectively grow on a Si surface of the product substrate. | 10-16-2008 |
| 20080308036 | VAPOR-PHASE GROWTH APPARATUS AND VAPOR-PHASE GROWTH METHOD - There is provided a vapor-phase growth apparatus which shortens a temperature decrease time of a wafer substrate after an epitaxial growth step to make it easy to realize a high throughput in film formation of an epitaxial layer. The vapor-phase growth apparatus includes a gas supply port formed in a top portion of a reactor, a gas distribution plate arranged in the reactor, a discharge port formed in a bottom portion of the reactor, an annular holder on which a semiconductor wafer is placed to face the gas distribution plate. A separation distance between the gas distribution plate and the annular holder is set such that a cooling gas which flows downward from the gas supply port through the gas distribution plate to decrease the temperature is in a laminar flow state on a surface of the semiconductor wafer or a surface of the annular holder. | 12-18-2008 |
| 20090101063 | Method of Manufacturing GaN Crystal Substrate - Affords a method of manufacturing GaN crystal substrate in which enlargement of pit size in the growing of GaN crystal is inhibited to enable GaN crystal substrate with a high substrate-acquisition rate to be produced. The method of manufacturing GaN crystal substrate includes a step of growing GaN crystal ( | 04-23-2009 |
| 20090199763 | Process for the production of gan or aigan crystals - The invention concerns a process and an apparatus for the production of gallium nitride or gallium aluminium nitride single crystals. It is essential for the process implementation according to the invention that the vaporisation of gallium or gallium and aluminium is effected at a temperature above the temperature of the growing crystal but at least at 1000° C. and that a gas flow comprising nitrogen gas, hydrogen gas, inert gas or a combination of said gases is passed over the surface of the metal melt in such a way that the gas flow over the surface of the metal melt prevents contact of the nitrogen precursor with the metal melt. | 08-13-2009 |
| 20090301389 | Method for Metal-Free Synthesis of Epitaxial Semiconductor Nanowires on Si - The present invention relates to epitaxial growth of nanowires on a substrate. In particular the invention relates to growth of nanowires on an Si-substrate without using Au as a catalyst. In the method according to the invention an oxide template is provided on a passivated surface of the substrate. The oxide template defines a plurality of nucleation onset positions for subsequent nanowire growth. According to one embodiment a thin organic film is used to form the oxide template. | 12-10-2009 |
| 20100101486 | SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING NITRIDE COMPOUND SEMICONDUCTOR SINGLE CRYSTAL - Provided is a technique for stabilizing characteristics of an NdGaO | 04-29-2010 |
| 20100139553 | Method of Growing III-Nitride Crystal - Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal ( | 06-10-2010 |
| 20100162945 | GALLIUM NITRIDE-BASED MATERIAL AND METHOD OF MANUFACTURING THE SAME - A method to make gallium nitride-based material by Hydride Vapor Phase Epitaxial Growth is provided. | 07-01-2010 |
| 20100206216 | Method of Producing High Quality Relaxed Silicon Germanium Layers - A method for minimizing particle generation during deposition of a graded Si.sub.1-xGe.sub.x layer on a semiconductor material includes providing a substrate in an atmosphere including a Si precursor and a Ge precursor, wherein the Ge precursor has a decomposition temperature greater than germane, and depositing the graded Si.sub.1-xGe.sub.x layer having a final Ge content of greater than about 0.15 and a particle density of less than about 0.3 particles/cm.sup.2 on the substrate. | 08-19-2010 |
| 20110000425 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate. | 01-06-2011 |
| 20110011332 | METHOD AND APPARATUS FOR PRODUCING LARGE, SINGLE-CRYSTALS OF ALUMINUM NITRIDE - A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm | 01-20-2011 |
| 20110017126 | COLOURED DIAMOND - A diamond layer of single crystal CVD diamond which is coloured, preferably which has a fancy colour, and which has a thickness of greater than 1 mm. | 01-27-2011 |
| 20110114014 | METHOD FOR MANUFACTURING EPITAXIAL WAFER AND WAFER HOLDER USED IN THE METHOD - A susceptor having a recessed portion and a ring-like step portion is arranged in a reaction chamber, and a plurality of through bores are formed in a bottom wall in the recessed portion excluding the step portion. A lift pin inserted in each of the through bores temporarily holds a wafer, then a lower surface of an outer peripheral portion of the wafer is mounted on the step portion to accommodate the wafer in the recessed portion, and a raw material gas is circulated in the reaction chamber to form an epitaxial layer on a wafer surface in the recessed portion. When forming the epitaxial layer on the wafer surface, the lift pin protrudes upwards from an upper surface of the bottom wall, and a height h of a top portion of the lift pin based on the upper surface of the bottom wall as a reference is set to the range from a position where the height h exceeds 0 mm to a position immediately before the lift pin comes into contact with the wafer. | 05-19-2011 |
| 20110209660 | METHODS AND APPARATUS FOR DEPOSITION PROCESSES - Methods and apparatus for deposition processes are provided herein. In some embodiments, an apparatus may include a substrate support comprising a susceptor plate having a pocket disposed in an upper surface of the susceptor plate and having a lip formed in the upper surface and circumscribing the pocket, the lip configured to support a substrate on the lip; and a plurality of vents extending from the pocket to the upper surface of the susceptor plate to exhaust gases trapped between the backside of the substrate and the pocket when a substrate is disposed on the lip. Methods of utilizing the inventive apparatus for depositing a layer on a substrate are also disclosed. | 09-01-2011 |
| 20110277681 | GAS INJECTORS FOR CVD SYSTEMS WITH THE SAME - The present invention provides improved gas injectors for use with chemical vapour deposition (CVD) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates. | 11-17-2011 |
| 20110283933 | METHOD, SYSTEM, AND APPARATUS FOR THE GROWTH OF SiC AND RELATED OR SIMILAR MATERIAL, BY CHEMICAL VAPOR DEPOSITION, USING PRECURSORS IN MODIFIED COLD-WALL REACTOR - An approach for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique is described here. The method comprises modifications in the design of the typical cold-wall CVD reactors, providing a better temperature uniformity in the reactor bulk and a low temperature gradient in the vicinity of the substrate, and an approach to increase the silicon carbide growth rate and to improve the quality of the growing layers, using halogenated carbon-containing precursors (carbon tetrachloride CCl | 11-24-2011 |
| 20120060750 | METHOD OF FORMING CRYSTALLINE OXIDE SEMICONDUCTOR FILM - An oxide semiconductor film with excellent crystallinity is formed. At the time when an oxide semiconductor film is formed, as a substrate is heated to a temperature of higher than or equal to a first temperature and lower than a second temperature, a part of the substrate having a typical length of 1 nm to 1 μm is heated to a temperature higher than or equal to the second temperature. Here, the first temperature means a temperature at which crystallization occurs with some stimulation, and the second temperature means a temperature at which crystallization occurs spontaneously without any stimulation. Further, the typical length is defined as the square root of a value obtained in such a manner that the area of the part is divided by the circular constant. | 03-15-2012 |
| 20120067274 | FILM FORMING APPARATUS, WAFER HOLDER, AND FILM FORMING METHOD - A wafer holder used in a film forming apparatus is disclosed. The wafer holder including a boat holding a plurality of wafers and a reaction gas supply part supplying a reaction gas from a side surface of the plurality of wafers held by the boat, and the wafer holder further includes an upper wafer holder being placed to cover an upper surface of each of the plurality of wafers when the plurality of wafer is supported by the boat and including a gas introduction suppression part suppressing an introduction of the reaction gas onto the upper surface of each the plurality of wafers by surrounding each of the plurality of wafers. | 03-22-2012 |
| 20120118226 | Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate - Fracture toughness of AlGaN single-crystal substrate is improved and its absorption coefficient reduced. A nitride semiconductor single-crystal substrate has a composition represented by the formula Al | 05-17-2012 |
| 20120160157 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE - There is provided a method of manufacturing a light emitting diode, the method including: growing a first conductivity type nitride semiconductor layer and an active layer on a substrate in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the active layer grown thereon to a second reaction chamber; and growing a second conductivity type nitride semiconductor layer on the active layer in the second reaction chamber, wherein an atmosphere including a nitride source gas and a dopant source gas supplying a dopant to be included in the second conductivity type nitride semiconductor layer is created in an interior of the second reaction chamber prior to the transferring of the substrate to the second reaction chamber. This method improves a system's operational capability and productivity. In addition, the crystallinity and doping uniformity of semiconductor layers obtained by this method may be improved. | 06-28-2012 |
| 20120174859 | METHOD AND APPARATUS FOR PRODUCING EPITAXIAL WAFER - After removing deposit on a susceptor in an epitaxial growth furnace by a cleaning recipe (step S | 07-12-2012 |
| 20120216743 | ATTACHMENT FOR SUBSTRATES HAVING DIFFERENT DIAMETERS, SUBSTRATE PROCESSING APPARATUS, AND METHOD OF MANUFACTURING SUBSTRATE OR SEMICONDUCTOR DEVICE - A downsized substrate may be housed in a substrate accommodation vessel (FOUP) constituting a transfer system corresponding to a large diameter substrate. An attachment includes an upper plate and a lower plate supported by a first support groove that can support an 8-inch wafer, and holding columns installed at the upper plate and the lower plate and including a second support groove that can support a 2-inch wafer (if necessary, via a wafer holder and a holder member). Accordingly, the 2-inch wafer can be housed in a pod corresponding to the 8-inch wafer, and the pod, which is a transfer system, can be standardized to reduce cost of a semiconductor manufacturing apparatus. In addition, a distance from each gas supply nozzle to the wafer can be increased to sufficiently mix reactive gases before arrival at the wafer and improve film-forming precision to the wafer. | 08-30-2012 |
| 20120234229 | SUBSTRATE SUPPORT ASSEMBLY FOR THIN FILM DEPOSITION SYSTEMS - Substrate support assemblies and deposition chambers employing such support assemblies to improve temperature uniformity during film depositions, such as epitaxial growths of group-V material stacks for LEDs. In one embodiment, the support assembly includes a first component having a first thermal resistance and a top surface upon which the substrate is to be disposed at a first location. The support assembly further includes a second component to be disposed over the first component and cover a second location of the susceptor while the substrate is disposed over the first location and having a second thermal resistance to insulate regions of the susceptor adjacent to the substrate by an amount approximating that of the substrate during a deposition process. In embodiments, the second component is removable from the first component and supports the substrate in absence of the first component during transfer of the substrate between multiple deposition systems. | 09-20-2012 |
| 20120255486 | CLEANING APPARATUS AND METHOD, AND FILM GROWTH REACTION APPARATUS AND METHOD - Disclosed herein is an apparatus for cleaning an inner surface of a film growth reaction chamber, including a supporting unit, a cleaning unit, an electric motor and a power supply apparatus. The cleaning unit includes a surface facing the inner surface of the reaction chamber, and the surface is provided with a plurality of scraping structures. The electric motor is provided on the supporting unit and includes a driving shaft. One end of the driving shaft is connected to the cleaning unit so as to drive the cleaning unit to move. The power supply apparatus is connected to the electric motor. The cleaning apparatus of the present application provides a method for cleaning the inner surface of the reaction chamber, which is highly automatic, effective and timesaving, and may ensure the quality and consistency of cleaning process. | 10-11-2012 |
| 20120291696 | METHOD AND APPARATUS FOR CRYSTAL GROWTH USING A MEMBRANE-ASSISTED SEMI-CLOSED REACTOR - A method and apparatus for depositing III-V material is provided. The apparatus includes a reactor partially enclosed by a selectively permeable membrane | 11-22-2012 |
| 20120325138 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus and method comprising a film-forming chamber for supplying a reaction gas into, a cylindrical shaped liner provided between an inner wall of the film-forming chamber and a space for performing a film-forming process, a main-heater for heating a substrate placed inside the liner, from the bottom side, a sub-heater cluster provided between the liner and the inner wall, for heating the substrate from the top side, wherein the main-heater and the sub-heater cluster are resistive heaters, wherein the sub-heater cluster has a first sub-heater provided at the closest position to the substrate, and a second sub-heater provided above the first sub-heater, wherein the first sub-heater heats the substrate in combination with the main-heater, the second sub-heater heats the liner at a lower output than the first sub-heater, wherein each temperature of the main-heater, the first sub-heater, and the second sub-heater is individually controlled. | 12-27-2012 |
| 20130042803 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - A substrate processing apparatus includes: a process chamber having an object to be heated therein and configured to process a plurality of substrates; a substrate holder configured to hold the substrates with an interval therebetween in a vertical direction in the process chamber; a first heat exchange unit supporting the substrate holder from a lower side thereof in the process chamber and configured to perform a heat exchange with a gas in the process chamber; a second heat exchange unit provided in the process chamber, the second heat exchange unit being horizontally spaced apart from the first heat exchange unit with a gap therebetween and being configured to perform a heat exchange with the gas in the process chamber; and an induction heating unit configured to subject the object to be heated to an induction heating from an outer side of the object to be heated. | 02-21-2013 |
| 20130047917 | DIRECT LIQUID INJECTION FOR HALIDE VAPOR PHASE EPITAXY SYSTEMS AND METHODS - Methods of depositing compound semiconductor materials on one or more substrates include metering and controlling a flow rate of a precursor liquid from a precursor liquid source into a vaporizer. The precursor liquid may comprise at least one of GaCl | 02-28-2013 |
| 20130152852 | LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM - Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10 | 06-20-2013 |
| 20130152853 | FILM-FORMING APPARATUS AND FILM-FORMING METHOD - A film-forming apparatus | 06-20-2013 |
| 20130180447 | SUSCEPTOR AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - A susceptor is disclosed that can increase a heat capacity of a susceptor outer peripheral portion by enlarging the thickness of the susceptor and equalize thermal conditions for an outer peripheral portion and the inner peripheral portion of a wafer and a method for manufacturing an epitaxial wafer that uses this susceptor to perform vapor-phase epitaxy of an epitaxial layer. Back surface depositions have a close relationship with heat transfer that occurs between a wafer and a susceptor, i.e., a wafer outer peripheral portion has a higher temperature than a wafer inner peripheral portion since the wafer is in contact with or close to the susceptor at the wafer outer peripheral portion and hence the back surface depositions are apt to be generated. This is solved by equalizing thermal conditions for the wafer outer peripheral portion and the inner peripheral portion of the wafer back surface. | 07-18-2013 |
| 20130269599 | Methods and Apparatus for Continuous Pressure Control Processing - Apparatus and method for continuous pressure control in a process chamber. An apparatus includes a process chamber configured to receive a wafer; at least one pump coupled to the process chamber for maintaining pressure in the process chamber; an inlet for receiving reactive gasses into the process chamber; and a pressure control valve positioned between the at least one pump and configured to seal the process chamber to control the pressure in the process chamber. A method includes disposing at least one semiconductor wafer into a process chamber that is coupled to a pump for maintaining a sub-atmospheric pressure within the process chamber; introducing reactive process gasses into the process chamber; using a pressure control valve, at least partially sealing the process chamber; and increasing the pressure within the process chamber while exposing the semiconductor wafer to the process gasses to form epitaxial material. Additional embodiments are disclosed. | 10-17-2013 |
| 20130319319 | SUSCEPTOR AND METHOD FOR MANUFACTURING EPITAXIAL WAFER USING THE SAME - The present invention provides a susceptor for supporting a semiconductor substrate at the time of performing vapor-phase epitaxy of an epitaxial layer, wherein a pocket in which the semiconductor substrate is to be placed is formed on an upper surface of the susceptor, the pocket has a two-stage structure having an upper-stage-pocket portion for supporting an outer peripheral edge portion of the semiconductor substrate and a lower-stage-pocket portion that is formed on a central side of the pocket below the upper-stage-pocket portion, through holes that penetrate to a back surface of the susceptor and are opened at the time of performing the vapor-phase epitaxy are formed in the lower-stage-pocket portion, and a groove is provided on the back surface of the susceptor at a position corresponding to that of the upper-stage-pocket portion. | 12-05-2013 |
| 20140014029 | METHOD OF FABRICATING A COMPOSITE STRUCTURE WITH A STABLE BONDING LAYER OF OXIDE - A method of preventing microcavity formation in the bonding layer of a composite structure resulting from creep and thermal expansion due to high temperature exposure of the composite structure The method includes the steps of providing the thin film with a thickness of 5 micrometers or less; providing the bonding layer of oxide with a thickness that is equal to or greater than the thickness of the thin film with the bonding layer formed by low pressure chemical vapor deposition. The thin film or support substrate have a mean thermal expansion coefficient of 7×10 | 01-16-2014 |
| 20140020619 | Method for Growing a Monocrystalline Tin-Containing Semiconductor Material - Disclosed are methods for growing Sn-containing semiconductor materials. In some embodiments, an example method includes providing a substrate in a chemical vapor deposition (CVD) reactor, and providing a semiconductor material precursor, a Sn precursor, and a carrier gas in the CVD reactor. The method further includes epitaxially growing a Sn-containing semiconductor material on the substrate, where the Sn precursor comprises tin tetrachloride (SnCl | 01-23-2014 |
| 20140150713 | CONTROLLING DOPING OF SYNTHETIC DIAMOND MATERIAL - A method of manufacturing synthetic CVD diamond material, the method comprising: providing a microwave plasma reactor comprising: a plasma chamber; one or more substrates disposed in the plasma chamber providing a growth surface area over which the synthetic CVD diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, injecting process gases into the plasma chamber; feeding microwaves from the microwave generator into the plasma chamber through the microwave coupling configuration to form a plasma above the growth surface area; and growing synthetic CVD diamond material over the growth surface area, wherein the process gases comprise at least one dopant in gaseous form, selected from a one or more of boron, silicon, sulphur, phosphorous, lithium and beryllium at a concentration equal to or greater than 0.01 ppm and/or nitrogen at a concentration equal to or greater than 0.3 ppm, wherein the gas flow system includes a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area, and wherein the process gases are injected towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm | 06-05-2014 |
| 20140230722 | EPITAXIAL WAFER MANUFACTURING DEVICE AND MANUFACTURING METHOD - An epitaxial wafer manufacturing device, including a shield ( | 08-21-2014 |
| 20140290564 | SUSCEPTOR, VAPOR PHASE GROWTH APPARATUS, AND METHOD OF MANUFACTURING EPITAXIAL WAFER - An aspect of the present invention relates to a susceptor comprising a counterbored groove receiving a semiconductor wafer in the course of manufacturing an epitaxial wafer by vapor phase growing an epitaxial layer on a surface of the semiconductor wafer, wherein a lateral wall of the counterbored groove is comprised of at least one flat portion and at least one protruding portion being higher than the flat portion, and a height of the flat portion is equal to or greater than a thickness of the semiconductor wafer. | 10-02-2014 |
| 20150013593 | THIN FILM FORMATION - A method of forming a graphene film on a surface ( | 01-15-2015 |
| 20150068447 | METHOD AND APPARATUS FOR PRODUCING BULK SILICON CARBIDE FROM A SILICON CARBIDE PRECURSOR - A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positioned inside the furnace shell surrounded by insulation. The hot zone comprises a crucible with a silicon carbide precursor positioned in the lower region and a silicon carbide seed positioned in the upper region. The hot zone is heated to sublimate the silicon carbide precursor, forming silicon carbide on the bottom surface of the silicon carbide seed. Also disclosed is the sublimation furnace to produce the silicon carbide as well as the resulting silicon carbide material. | 03-12-2015 |
| 20160090665 | APPARATUS FOR PRODUCING GROUP III NITRIDE CRYSTAL, AND METHOD FOR PRODUCING THE SAME - Apparatus and method for producing a Group III nitride crystal are to be provided. The apparatus for producing a Group III nitride crystal, contains: a chamber; a nitrogen element-containing gas supplying port for supplying a nitrogen element-containing gas to the chamber; a compound gas supplying port for supplying a compound gas of the Group III element to the chamber, so as to mix the compound gas with the nitrogen element-containing gas; a discharging port for discharging the compound gas and the nitrogen element-containing gas thus mixed, outside the chamber; a holder for holding a seed substrate at a position that is on a downstream side of a mixing point of the compound gas and the nitrogen element-containing gas and is an upstream side of the discharging port; a first heater for heating the seed substrate; and a second heater for heating a space between the mixing point and the seed substrate to a temperature that is higher than a temperature heated by the first heater. | 03-31-2016 |
| 20160097144 | CONTAMINATION CONTROL METHOD OF VAPOR DEPOSITION APPARATUS AND METHOD OF PRODUCING EPITAXIAL SILICON WAFER - A contamination control method includes: a wafer loading step for loading a monitor wafer in a chamber of a vapor deposition apparatus; a heat-treatment repetition step for consecutively repeating a heat-treatment step for thermally treating the monitor wafer for predetermined times; a wafer unloading step for unloading the monitor wafer from the chamber; and a wafer-contamination-evaluation step for evaluating a metal-contamination degree of the monitor wafer unloaded out of the chamber. The heat-treatment step includes a first heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-containing gas and a second heat-treatment step for thermally treating the monitor wafer in an atmosphere of a hydrogen-chloride-containing gas and the hydrogen-containing gas. | 04-07-2016 |
| 20160108554 | METHOD FOR MANUFACTURING ALUMINUM-BASED GROUP III NITRIDE SINGLE CRYSTAL - The method for manufacturing an aluminum-based group III nitride single crystal includes the step of supplying an aluminum halide gas and a nitrogen source gas onto a base substrate, such that a reaction of the aluminum halide gas and the nitrogen source gas is conducted on the base substrate, wherein the reaction of the aluminum halide gas and the nitrogen source gas is conducted under coexistence of a halogen-based gas such that a halogen-based gas ratio (H) represented by the following formula (1) is no less than 0.1 and less than 1.0: | 04-21-2016 |
| 20160115622 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus according to an embodiment includes n (n is an integer equal to or greater than 1) reaction chambers each processing a substrate under a pressure less than atmospheric pressure, a cassette chamber having a cassette holding portion capable of placing a cassette holding the substrate on the cassette holding portion, internal pressure of the cassette chamber being able to be reduced to a pressure less than the atmospheric pressure, a transferring chamber provided between the reaction chamber and the cassette chamber and transferring the substrate under a pressure less than the atmospheric pressure, and a substrate standby portion capable of simultaneously holding n or more substrates processed in the reaction chamber and provided in a region having a heat-resistant temperature of 500° C. or more, internal pressure of the region being able to be reduced to a pressure less than the atmospheric pressure. | 04-28-2016 |
| 20160138189 | SUBSTRATE HOLDER, PLASMA REACTOR AND METHOD FOR DEPOSITING DIAMOND - A substrate holder having a base plate where a plurality of protruding poles is arranged, said poles spaced apart from one another by intermediate spaces. Alternatively or in addition, a plasma reactor for depositing diamond from the gas phase may be provided, the plasma reactor comprising such a substrate holder. A method for depositing diamond from the gas phase may be provided. | 05-19-2016 |
| 20160201219 | SUSCEPTOR WITH SUPPORTING ELEMENT | 07-14-2016 |
| 20180023214 | HEATING MODULATORS TO IMPROVE EPI UNIFORMITY TUNING | 01-25-2018 |
