| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 117101000 | Characterized by specified crystallography or arrangement of substrate (e.g., wafer cassette, Miller index) | 15 |
| 20090025629 | Substrate for Growing Compound Semiconductor and Epitaxial Growth Method - It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer. | 01-29-2009 |
| 20090165704 | Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon - A silicon seed rod assembly used for producing polycrystalline silicon by means of a vapor deposition method includes two rod-shape silicon seed rods; and a silicon connection member bridging the silicon seed rods, wherein an opening-end peripheral edge of a through-hole on one side surface of the connection member is sharper than that on the other side surface thereof, and an opening-end peripheral surface on the one side surface thereof is formed into a flat contact surface disposed in a direction perpendicular to a perforation direction of the through-hole, and wherein a upper end portion of the silicon seed rod is inserted into the through-hole so that the contact surface comes into contact with the support surface of the silicon seed rod. | 07-02-2009 |
| 20100175613 | Base material for forming single crystal diamond film and method for producing single crystal diamond using the same - The present invention is a base material for forming a single crystal diamond comprising, at least, a seed base material of a single crystal and a thin film heteroepitaxially grown on the seed base material, wherein the seed base material is a single crystal diamond and the thin film is Iridium film or Rhodium film. As a result, there is provided a base material for forming a single crystal diamond that enables a single crystal diamond having a high crystallinity to be heteroepitaxially grown thereon and that can be reused repeatedly and a method for producing a single crystal diamond that enables a single crystal diamond having a high crystallinity and a large area to be produced at low cost. | 07-15-2010 |
| 20100229789 | Beta-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method - A thin-film single crystal growing method includes preparing a substrate, irradiating an excitation beam on a metallic target made of a pure metal or an alloy in a predetermined atmosphere, and combining chemical species including any of atoms, molecules, and ions released from the metallic target by irradiation of the excitation beam with atoms contained in the predetermined atmosphere to form a thin film on the substrate. | 09-16-2010 |
| 20100275837 | OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. | 11-04-2010 |
| 20110056429 | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices - A method for rapid growth of gallium and nitrogen containing material is described. The method includes providing a bulk gallium and nitrogen containing substrate. A first epitaxial material of first thickness is formed over the substrate, preferably with a pseudomorphical process. The method also forms a second epitaxial layer over the first to create a stacked structure. The stacked structure consists of a total thickness of less than about 2 microns. | 03-10-2011 |
| 20120103250 | FILM OF N TYPE (100) ORIENTED SINGLE CRYSTAL DIAMOND SEMICONDUCTOR DOPED WITH PHOSPHOROUS ATOMS, AND A METHOD OF PRODUCING THE SAME - There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is ( | 05-03-2012 |
| 20120234231 | PROCESS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTALS - The process for producing silicon carbide single crystals of the present invention comprises a step for growing single crystals of silicon carbide on a silicon carbide seed crystal by supplying a sublimed gas of a silicon carbide source material to the silicon carbide seed crystal arranged on a pedestal, wherein a spacing member composed of silicon carbide is arranged between the pedestal and the silicon carbide seed crystal, the spacing member is non-adhesively held on the pedestal by a supporting member, the silicon carbide seed crystal is adhered to the surface of the spacing member on the opposite side of the pedestal, and the spacing member and the supporting member are relatively arranged so that the adhesive surface of the spacing member adhered with the silicon carbide seed crystal is separated by | 09-20-2012 |
| 20130276697 | METHOD AND APPARATUS FOR FABRICATING FREESTANDING GaN SUBSTRATE - It is to suppress abnormal growth of GaN crystals around edge ends of a seed substrate. A susceptor is provided that has a pocket section in which a seed substrate is fixed, and a sub-susceptor provided between the susceptor and the seed substrate, the sub-susceptor being not reactive with the seed substrate, with a gap provided between the seed substrate and the sub-susceptor. | 10-24-2013 |
| 20140020620 | DIAMOND - The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilised. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface. | 01-23-2014 |
| 20150337457 | GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD - In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Ga | 11-26-2015 |
| 20150361584 | ROLLED COPPER FOIL FOR PRODUCING TWO-DIMENSIONAL HEXAGONAL LATTICE COMPOUND AND METHOD OF PRODUCING TWO-DIMENSIONAL HEXAGONAL LATTICE COMPOUND - A rolled copper foil for producing a two-dimensional hexagonal lattice compound, including P: 0.01 to 0.21 wt %, Fe: 0.006 wt % or less, and the balance being Cu and inevitable impurities, and having the following relationship: 2.0<=(I/I | 12-17-2015 |
| 20160076168 | SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD - In one instance, the invention provides a substrate for growing a thick layer of group III nitride. The substrate has a first surface prepared for epitaxial growth of group III nitride and a second surface, opposite to the first surface, having a plurality of grooves. The invention also provides a method of producing a thick layer or a bulk crystal of group III nitride using a grooved substrate. The grooved substrate in one configuration grows a thick layer or a bulk crystal of group III nitride with reduced bow and/or spontaneous separation from the substrate. | 03-17-2016 |
| 20160186360 | MANUFACTURING METHOD OF EPITAXIAL SILICON WAFER - A manufacturing method of an epitaxial silicon wafer, using an epitaxial growth apparatus including a susceptor and a heat ring, includes: determining a surface position of a silicon wafer to be higher than a surface position of a peripheral portion of the susceptor and to be lower than a surface position of the heat ring; and adjusting a gap between the surface position of the silicon wafer and the surface position of the heat ring to control a difference between a film thickness of the epitaxial layer formed on a peripheral portion in a <110> orientation of the silicon wafer and a film thickness of the epitaxial layer formed on the peripheral portion in a <100> orientation of the silicon wafer. | 06-30-2016 |
| 20160251775 | METHOD FOR PRODUCING EPITAXIAL SILICON CARBIDE WAFER | 09-01-2016 |
