Class / Patent application number | Description | Number of patent applications / Date published |
117102000 | With significant flow manipulation or condition, other than merely specifying the components or their sequence or both | 25 |
20080276860 | CROSS FLOW APPARATUS AND METHOD FOR HYDRIDE VAPOR PHASE DEPOSITION - A method and apparatus for hydride vapor phase epitaxial (HVPE) deposition is disclosed. In the HVPE process, a hydride gas flows over a metal source to react with the metal source, which then reacts at the surface of a substrate to deposit a metal nitride layer. The metal source comprises gallium, aluminum, and/or indium. The hydride gas is evenly provided over the metal source to increase efficiency of hydride-metal source reaction. An exhaust positioned diametrically across the chamber from the metal source creates a cross flow of the hydride-metal source product and nitrogen precursor across the chamber tangential to the substrate. A purge gas flowing perpendicular to the cross flow directs the hydride-metal source product and nitrogen precursor to remain as close to the substrate as possible. | 11-13-2008 |
20090107394 | Device for manufacturing sic single crystal and method for the same - A device for manufacturing a SiC single crystal includes: a raw material gas introduction pipe; a raw material gas heat chamber having a raw material gas supply passage for heating the gas in the passage; a reaction chamber having a second sidewall, an inner surface of which contacts an outer surface of a first sidewall of the heat chamber, and having a bottom, on which a SiC single crystal substrate is arranged; and a discharge pipe in a hollow center of the raw material gas heat chamber. The supply passage is disposed between an outer surface of the discharge pipe and an inner surface of the first sidewall. The discharge pipe discharges a residual gas, which is not used for crystal growth of the SiC single crystal. | 04-30-2009 |
20090205563 | TEMPERATURE-CONTROLLED PURGE GATE VALVE FOR CHEMICAL VAPOR DEPOSITION CHAMBER - The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl | 08-20-2009 |
20100242835 | HIGH VOLUME DELIVERY SYSTEM FOR GALLIUM TRICHLORIDE - The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods and equipment are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the precursor is provided at a mass flow of at least 50 g Group III element/hour for a time of at least 48 hours to facilitate high volume manufacture of the semiconductor material. Advantageously, the mass flow of the gaseous Group III precursor is controlled to deliver the desired amount. | 09-30-2010 |
20120240845 | PRODUCTION METHOD OF AN ALUMINUM NITRIDE SINGLE CRYSTAL - Disclosed is a novel method wherein an aluminum nitride single crystal having good crystallinity is efficiently and easily manufactured. The method for produsing an aluminum nitride single crystal wherein nitrogen gas is circulated in the presence of a raw material gas generation source, which generates an aluminum gas or an aluminum oxide gas, and a carbon body, and then the aluminum nitride single crystal is grown under a heating condition; characterized in that,
| 09-27-2012 |
20130032084 | SILICON WAFERS BY EPITAXIAL DEPOSITION - A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors. | 02-07-2013 |
20130047918 | DEPOSITION SYSTEMS INCLUDING A PRECURSOR GAS FURNACE WITHIN A REACTION CHAMBER, AND RELATED METHODS - Deposition systems include a reaction chamber, a substrate support structure disposed within the chamber for supporting a substrate within the reaction chamber, and a gas input system for injecting one or more precursor gases into the reaction chamber. The gas input system includes at least one precursor gas furnace disposed at least partially within the reaction chamber. Methods of depositing materials include separately flowing a first precursor gas and a second precursor gas into a reaction chamber, flowing the first precursor gas through at least one precursor gas flow path extending through at least one precursor gas furnace disposed within the reaction chamber, and, after heating the first precursor gas within the at least one precursor gas furnace, mixing the first and second precursor gases within the reaction chamber over a substrate. | 02-28-2013 |
20130199441 | GAS INJECTORS FOR CHEMICAL VAPOUR DEPOSITION (CVD) SYSTEMS AND CVD SYSTEMS WITH THE SAME - The present invention provides improved gas injectors for use with CVD (chemical vapour deposition) systems that thermalize gases prior to injection into a CVD chamber. The provided injectors are configured to increase gas flow times through heated zones and include gas-conducting conduits that lengthen gas residency times in the heated zones. The provided injectors also have outlet ports sized, shaped, and arranged to inject gases in selected flow patterns. The invention also provides CVD systems using the provided thermalizing gas injectors. The present invention has particular application to high volume manufacturing of GaN substrates. | 08-08-2013 |
20130327266 | TEMPERATURE-CONTROLLED PURGE GATE VALVE FOR CHEMICAL VAPOR DEPOSITION CHAMBER - The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl | 12-12-2013 |
20140318442 | HIGH THROUGHPUT EPITAXIAL DEPOSITION SYSTEM FOR SINGLE CRYSTAL SOLAR DEVICES - An epitaxial reactor enabling simultaneous deposition of thin films on a multiplicity of wafers is disclosed. During deposition, a number of wafers are contained within a wafer sleeve comprising a number of wafer carrier plates spaced closely apart. Process gases flow preferentially into the interior volume of the wafer sleeve, which is heated by one or more lamp modules. To improve uniformity, the direction of process gas flow may be varied in a cross-flow configuration and the wafers may be mounted at a small angle to the plane of the wafer carrier plates, wherein the wafers are configured in pairs along the direction of gas flow and wherein along the direction of gas flow the angular mounting of the wafers provides a smaller gap between opposed wafer surfaces on said parallel wafer carrier plates in the center of said wafer sleeve than at the periphery of said wafer sleeve. | 10-30-2014 |
20140318443 | NUCLEATION OF ALUMINUM NITRIDE ON A SILICON SUBSTRATE USING AN AMMONIA PREFLOW - A silicon wafer used in manufacturing crystalline GaN for light emitting diodes (LEDs) includes a silicon substrate, a buffer layer of aluminum nitride (AlN) and an upper layer of GaN, the silicon wafer has a diameter of at least 200 millimeters and an Si(111)1×1 surface. The AlN buffer layer overlies the Si(111) surface. The GaN upper layer is disposed above the buffer layer, Across the entire wafer substantially no aluminum atoms of the AlN are present in a bottom most plane of atoms of the AlN, and across the entire wafer substantially only nitrogen atoms of the AlN are present in the bottom most plane of atoms of the AlN. A method of making the AlN buffer layer includes preflowing a first amount of ammonia equaling less than 0.01% by volume of hydrogen flowing through a chamber before flowing trimethylaluminum and then a subsequent amount of ammonia through the chamber. | 10-30-2014 |
20150007766 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a gas supply path connected to an organic metal supply source at a first connection, the gas supply path being connected to a carrier gas supply source, the gas supply path supplies a process gas including organic metal and a carrier gas into the reaction chamber; a gas discharge path connected to the organic metal supply source at a second connection, the gas discharge path discharges the process gas to the outside of the apparatus; a first mass flow controller and a first adjustment device provided at the gas supply path; a second adjustment device provided at the gas discharge path; and a shortcut path connecting the gas supply path to the gas discharge path. One of the first and the second adjustment device is a back pressure regulator, and the other is a mass flow controller. | 01-08-2015 |
20150013594 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD - A vapor phase growth apparatus of an embodiment includes: a reaction chamber; a first gas supply path configured to supply a first process gas including organic metal and a carrier gas into the reaction chamber; a second gas supply path configured to supply a second process gas including ammonia into the reaction chamber; a first carrier gas supply path configured to supply a first carrier gas of a hydrogen or inert gas into the first gas supply path while being connected to the first gas supply path and including a first mass flow controller; and a second carrier gas supply path configured to supply a second carrier gas of a hydrogen or inert gas different from the first carrier gas into the first gas supply path while being connected to the first gas supply path and including a second mass flow controller. | 01-15-2015 |
20150013595 | SILICON CARBIDE CRYSTAL GROWTH IN A CVD REACTOR USING CHLORINATED CHEMISTRY - A silicon carbide growth method for growing a silicon carbide crystal on a substrate in a hot wall reaction chamber heated to a temperature between 1600° C. and 2000° C. Process gases enter the reaction chamber utilizing at least a primary gas flow, a secondary gas flow, and a shower gas flow. The shower gas flow is fed substantially perpendicularly to the primary and secondary gas flows and is directed towards the substrate. The primary and secondary gas flows are oriented substantially parallel to the surface of the substrate. A silicon precursor gas is entered by the primary gas flow. A hydrocarbon precursor gas is entered in at least one of the primary gas flow, the secondary gas flow, or the shower gas flow. Hydrogen is entered primarily in the secondary flow and the shower head flow. A CVD reactor chamber for use in processing the method. | 01-15-2015 |
20150059641 | BULK DIFFUSION CRYSTAL GROWTH PROCESS - The present disclosure generally relates to systems and methods for growing group III-V nitride crystals. In particular the systems and methods include diffusing constituent species of the crystals through a porous body composed of the constituent species, where the species freely nucleate to grow large nitride crystals. | 03-05-2015 |
20150075422 | EPITAXIAL SILICON CARBIDE MONOCRYSTALLINE SUBSTRATE AND METHOD OF PRODUCTION OF SAME - The present invention provides an epitaxial SiC monocrystalline substrate having a high quality epitaxial film suppressed in occurrence of step bunching in epitaxial growth using a substrate with an off angle of 6° or less and a method of production of the same, that is, an epitaxial silicon carbide monocrystalline substrate comprised of a silicon carbide monocrystalline substrate with an off angle of 6° or less on which a silicon carbide monocrystalline thin film is formed, the epitaxial silicon carbide monocrystalline substrate characterized in that the silicon carbide monocrystalline thin film has a surface with a surface roughness (Ra value) of 0.5 nm or less and a method of production of the same. | 03-19-2015 |
20150107511 | EPITAXIAL GROWTH METHOD - A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm | 04-23-2015 |
20150114282 | EPITAXIAL GROWTH METHOD - A method for growing an epitaxial film on a surface of a semiconductor wafer by mounting the wafer within a susceptor pocket and supplying source gas and carrier gas to the upper surface side of the susceptor and supplying carrier gas to the lower surface side of the susceptor. The susceptor includes a substantially circular bottom wall and a sidewall encompassing the bottom wall to form a pocket for mounting the wafer, wherein a plurality of circular through-holes are formed in the bottom wall in an outer peripheral region a distance of up to about ½ the radius toward the center of the bottom wall. The total opening surface area of the through-holes is 0.05 to 55% of the surface area of the bottom wall, the opening surface area of each through-hole is 0.2 to 3.2 mm | 04-30-2015 |
20150361583 | DUAL AUXILIARY DOPANT INLETS ON EPI CHAMBER - The present invention provides methods and apparatus for processing semiconductor substrates with dual or multiple dopant inlets formed at different locations of an epitaxial chamber configured to supply dopant gases toward different locations of the substrate during deposition. In one embodiment, a gas delivery system configured to couple to an epitaxial deposition chamber includes a gas conduit has a first end and a second end configured to dispose in an epitaxial deposition chamber, the first end coupled to a gas panel and a second end branched out to include an auxiliary inner dopant inlet and an auxiliary outer dopant inlet, wherein the auxiliary inner dopant inlet and the auxiliary outer dopant inlet are independently controlled when implementing in the epitaxial deposition chamber. | 12-17-2015 |
20150368831 | SYSTEMS AND METHODS FOR AUTOMATED PRODUCTION OF MULTI-COMPOSITION NANOMATERIAL - Various methods and systems are provided for production of nanowires or other nanomaterials. In one example, among others, a system includes a furnace configured to heat at least a portion of a tube, a material feeder coupled to a first end of the tube, and a vacuum pumping system coupled to a second end of the tube. The material feeder can include a source material manipulator that can position a source material in a fixture of a feeder arm and a linear manipulator that can extend the fixture into the tube, where it can be heated to produce a precursor vapor that can be used to form a nanomaterial on a substrate. In another example, a method includes extending a fixture holding source material into a furnace tube, drawing a precursor vapor produced from the source material across a substrate in the furnace tube, and forming nanomaterial on the substrate. | 12-24-2015 |
20160138190 | SILICON CARBIDE SEMICONDUCTOR FILM-FORMING APPARATUS AND FILM-FORMING METHOD USING THE SAME - In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses. | 05-19-2016 |
20160145767 | DEPOSITION SYSTEMS HAVING ACCESS GATES AT DESIRABLE LOCATIONS, AND RELATED METHODS - Deposition systems include a reaction chamber, and a substrate support structure disposed at least partially within the reaction chamber. The systems further include at least one gas injection device and at least one vacuum device, which together are used to flow process gases through the reaction chamber. The systems also include at least one access gate through which a workpiece substrate may be loaded into the reaction chamber and unloaded out from the reaction chamber. The at least one access gate is located remote from the gas injection device. Methods of depositing semiconductor material may be performed using such deposition systems. Methods of fabricating such deposition systems may include coupling an access gate to a reaction chamber at a location remote from a gas injection device. | 05-26-2016 |
20160168750 | METHOD OF PRODUCING HIGH-PURITY CARBIDE MOLD | 06-16-2016 |
20160177470 | VAPOR PHASE GROWTH APPARATUS AND VAPOR PHASE GROWTH METHOD | 06-23-2016 |
20170233888 | REACTOR GAS PANEL COMMON EXHAUST | 08-17-2017 |