Class / Patent application number | Description | Number of patent applications / Date published |
326037000 |
MULTIFUNCTIONAL OR PROGRAMMABLE (E.G., UNIVERSAL, ETC.)
| 802 |
326021000 |
SIGNAL SENSITIVITY OR TRANSMISSION INTEGRITY
| 498 |
326062000 |
INTERFACE (E.G., CURRENT DRIVE, LEVEL SHIFT, ETC.)
| 413 |
326093000 |
CLOCKING OR SYNCHRONIZING OF LOGIC STAGES OR GATES
| 169 |
326104000 |
FUNCTION OF AND, OR, NAND, NOR, OR NOT
| 161 |
326101000 |
SIGNIFICANT INTEGRATED STRUCTURE, LAYOUT, OR LAYOUT INTERCONNECTIONS
| 113 |
326008000 |
SECURITY (E.G., ACCESS OR COPY PREVENTION, ETC.)
| 107 |
326009000 |
RELIABILITY
| 94 |
326016000 |
WITH TEST FACILITATING FEATURE
| 94 |
326001000 |
SUPERCONDUCTOR (E.G., CRYOGENIC, ETC.)
| 49 |
326056000 |
TRI-STATE (I.E., HIGH IMPEDANCE AS THIRD STATE)
| 46 |
326052000 |
EXCLUSIVE FUNCTION (E.G., EXCLUSIVE OR, ETC.)
| 36 |
326035000 |
THRESHOLD (E.G., MAJORITY, MINORITY, OR WEIGHTED INPUTS, ETC.)
| 35 |
326059000 |
THREE OR MORE ACTIVE LEVELS (E.G., TERNARY, QUATENARY, ETC.)
| 18 |
326017000 |
ACCELERATING SWITCHING
| 6 |
326051000 |
INHIBITOR | 2 |
20110254589 | INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING SAME - An integrated circuit has one or more logic gates and a control circuit. The control circuit has one or more control elements coupled to the logic gates. The control circuit controls the states of the one or more logic gates. The one or more control elements have one or more programmable resistance elements and/or one or more threshold switching elements. | 10-20-2011 |
20130176053 | INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME - An integrated circuit has one or more logic gates and a control circuit. The control circuit has one or more control elements coupled to the logic gates. The control circuit controls the states of the one or more logic gates. | 07-11-2013 |
326100000 |
INTEGRATED INJECTION LOGIC | 1 |
20110279146 | COMPLEMENTARY SPIN TRANSISTOR LOGIC CIRCUIT - There is provided a complementary spin transistor logic circuit, including: a parallel spin transistor that includes a magnetized first source, a first drain magnetized in parallel with the magnetization direction of the first source, a first channel layer and a first gate electrode; and an anti-parallel spin transistor that includes a magnetized second source, a second drain magnetized in anti-parallel with the magnetization direction of the second source, a second channel layer and a second gate electrode, wherein the first gate electrode and the second gate electrode are connected to a common input terminal. | 11-17-2011 |