Class / Patent application number | Description | Number of patent applications / Date published |
438708000 | Photo-induced etching | 18 |
20080214011 | Method for Fabricating Dual Damascene Structures - A method for fabricating a dual damascene structure includes providing a multi-layer photoresist stack comprising a first photoresist layer and a second photoresist layer, wherein each photoresist layer has a distinct dose-to-clear value, exposing said photoresist stack to one or more predetermined patterns of light, and developing said photo-resist layers to form a multi-tiered structure in the photo-resist layers. | 09-04-2008 |
20090246963 | Exposure Apparatus Applying Polarization Illuminator and Exposure Method Using the Same - An exposure apparatus for transferring patterns on a phase shift mask into a wafer according to the present invention comprises a light source, a polarized light illuminator that selectively passes through a TM mode polarized light of light from the light source to cause it to be incident onto the phase shift mask, a polarization mode translator that translates the TM mode polarized light passing through the phase shift mask into TE mode polarized light, and a lens system irradiating the TE mode polarized light from the polarization mode translator on the wafer. | 10-01-2009 |
20100267242 | Selective Etching Of Semiconductor Substrate(s) That Preserves Underlying Dielectric Layers - In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched. | 10-21-2010 |
20110306213 | OZONE PLENUM AS UV SHUTTER OR TUNABLE UV FILTER FOR CLEANING SEMICONDUCTOR SUBSTRATES - A quartz window with an interior plenum is operable as a shutter or UV filter in a degas chamber by supplying the plenum with an ozone-containing gas. Pressure in the plenum can be adjusted to block UV light transmission into the degas chamber or adjust transmittance of UV light through the window. When the plenum is evacuated, the plenum allows maximum transmission of UV light into the degas chamber. | 12-15-2011 |
20110312186 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - The semiconductor device manufacturing method comprises the step of transferring patterns formed on a reticle to a semiconductor substrate by an exposure with oblique incidence illumination. In the step of making the exposure with oblique incidence illumination, the exposure is made with an aperture stop | 12-22-2011 |
20130059446 | GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS - A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. | 03-07-2013 |
20130210237 | PHOTORESIST REMOVAL METHOD AND PATTERNING PROCESS UTILIZING THE SAME - A photoresist removal method is described. A substrate having thereon a positive photoresist layer to be removed is provided. The positive photoresist layer is UV-exposed without using a photomask. A development liquid is used to remove the UV-exposed positive photoresist layer. The substrate as provided may further have thereon a sacrificial masking layer under the positive photoresist layer. The sacrificial masking layer is removed after the UV-exposed positive photoresist layer is removed. | 08-15-2013 |
20130309872 | GAS CLUSTER ION BEAM ETCHING PROCESS FOR ACHIEVING TARGET ETCH PROCESS METRICS FOR MULTIPLE MATERIALS - A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. | 11-21-2013 |
20140030895 | METHODS AND SYSTEM FOR GENERATING A THREE-DIMENSIONAL HOLOGRAPHIC MASK - A system for surface patterning using a three dimensional holographic mask includes a light source configured to emit a light beam toward the holographic mask. The holographic mask can be formed as a topographical pattern on a transparent mask substrate. A semiconductor substrate can be positioned on an opposite site of the holographic mask as the light source and can be spaced apart from the holographic mask. The system can also include a base for supporting the semiconductor substrate. | 01-30-2014 |
20140302679 | PHASE SHIFT MASK, METHOD OF FORMING ASYMMETRIC PATTERN, METHOD OF MANUFACTURING DIFFRACTION GRATING, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A technique of forming an asymmetric pattern by using a phase shift mask, and further, techniques of manufacturing a diffraction grating and a semiconductor device, capable of improving accuracy of a product and capable of shortening manufacturing time. In a method of manufacturing a diffraction grating by using a phase shift mask (in which a light shield part and a light transmission part are periodically arranged), light emitted from an illumination light source is transmitted through the phase shift mask, and a photoresist on a surface of a Si wafer is exposed by providing interference between zero diffraction order light and positive first diffraction order light which are generated by the transmission through this phase shift mask onto the surface of the Si wafer, and a diffraction grating which has a blazed cross-sectional shape is formed on the Si wafer. | 10-09-2014 |
20150050813 | LITHOGRAPHY APPARATUS, AND METHOD OF MANUFACTURING ARTICLE - A lithography apparatus includes: a shield including a shield member having an aperture formed therein and having a first edge and a second edge defining the aperture; a driving mechanism including a rotation mechanism configured to rotate the shield member and a translation mechanism configured to translate the shield member; and a controller configured to control the driving mechanism so as to sequentially perform patterning. | 02-19-2015 |
20150099364 | METHOD FOR INTEGRATED CIRCUIT FABRICATION - Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the wafer having a resist layer. The method further includes exposing the resist layer using the mask with a fraction radiation dose thereby forming a first plurality of images; re-positioning the mask relative to the wafer; and exposing the resist layer using the mask with another fraction radiation dose. A second plurality of images is formed, wherein a portion of the second plurality of images is superimposed over another portion of the first plurality of images. | 04-09-2015 |
20150371855 | APPARATUS FOR ETCHING TWO-DIMENSIONAL MATERIAL AND METHOD OF PATTERNING TWO-DIMENSIONAL MATERIAL USING THE SAME - According to example embodiments, an apparatus for etching a two-dimensional material layer includes a stage configured to support an etching target including graphene on the stage, a light source configured to emit light having a wavelength that is shorter than a wavelength of visible light, a mask imprinted with a pattern for transferred onto the etching target, a fluid inlet configured to supply a fluid over the etching target, and a fluid outlet configured to absorb a residue and a reaction product after the fluid is supplied over the etching target using the fluid inlet. | 12-24-2015 |
20160005613 | PROCESS FOR TREATING A STRUCTURE - The disclosure relates to a process for treating a structure, the structure comprising, from its back side to its front side, a carrier substrate, an insulating layer and a useful layer, the useful layer having a free surface, the structure being placed in an atmosphere containing chemical species, the chemical species being capable of reacting chemically with the useful layer. This treatment process is noteworthy in that the useful layer is heated by a pulsed laser beam, the beam sweeping the free surface, the wavelength of the beam differing by, at most, plus or minus 15 nm from a central wavelength, the central wavelength being chosen so that the sensitivity of the reflectivity of the structure relative to the insulating layer is zero. | 01-07-2016 |
438709000 | Photo-induced plasma etching | 4 |
20120244717 | RESIN REMOVAL METHOD, RESIN REMOVAL APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a resin removal method is provided. In the resin removal method, near-field light is generated in a local area of a pattern concave-convex portion on a pattern master used for imprinting by irradiating the pattern master with ultraviolet light in an ashing gas atmosphere which removes resin attached to the pattern master. Then, the resin is removed from the pattern master by using the ashing gas and the near-field light. | 09-27-2012 |
20130196509 | Gas Cluster Ion Beam Etching Process for Etching Si-Containing, Ge-Containing, and Metal-Containing Materials - A method and system for performing gas cluster ion beam (GCIB) etch processing of various materials is described. In particular, the GCIB etch processing includes setting one or more GCIB properties of a GCIB process condition for the GCIB to achieve one or more target etch process metrics. Furthermore, the GCIB etch processing utilizes Si-containing and/or Ge-containing etchants. Further yet, the GCIB etch processing facilitates etching Si-containing material, Ge-containing material, and metal-containing material. | 08-01-2013 |
20140273482 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND DRY ETCHING APPARATUS FOR THE SAME - A manufacturing method of a semiconductor device including arranging a compound semiconductor above a stage of a chamber, supplying an etching gas into the chamber, and generating a plasma in the chamber is provided. The compound semiconductor includes a group-III element nitride as a main component. A surface of the compound semiconductor is processed by a dry etching. Light is irradiated into the chamber during the generating of the plasma. A dry etching apparatus including a chamber including a stage, on which a compound semiconductor is mounted, and a light source irradiating light into the chamber is provided. The chamber is supplied with an etching gas. A plasma is generated in the chamber. A surface of the compound semiconductor is an object of a dry etching. | 09-18-2014 |
20140335695 | EXTERNAL UV LIGHT SOURCES TO MINIMIZE ASYMMETRIC RESIST PATTERN TRIMMING RATE FOR THREE DIMENSIONAL SEMICONDUCTOR CHIP MANUFACTURE - Embodiments of the present invention provide an apparatus and methods for forming stair-like structures in manufacturing three dimensional (3D) stacking of semiconductor chips. In one embodiment, a method of forming stair-like structures on a substrate includes performing a trimming process on a substrate to trim a patterned photoresist layer disposed on a film stack from a first width to a second width in a processing chamber, wherein the patterned photoresist layer exposes a portion of the film stack uncovered by the patterned photoresist layer during the trimming process, wherein the trimming process further comprises supplying a trimming gas mixture including at least an oxygen containing gas, and providing a light energy in the trimming gas mixture to an edge of the substrate during the trimming process. | 11-13-2014 |