| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 430316000 | Multiple etching of substrate | 14 |
| 20080248431 | PATTERN FORMING METHOD USED IN SEMICONDUCTOR DEVICE MANUFACTURING AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A pattern forming method includes forming a first anti-reflection coating on a substrate, the substrate having an uneven surface; forming a second anti-reflection coating on the first anti-reflection coating, the first anti-reflection coating having an uneven surface, and the second anti-reflection coating planarizing the uneven surface of the first anti-reflection coating; forming an intermediate layer film on the second anti-reflection coating; forming a resist film on the intermediate-layer film; patterning the resist film to form a resist pattern; forming an intermediate-layer pattern by etching the intermediate-layer film using the resist pattern as a mask; and forming an under-layer pattern by etching the first and second anti-reflection coatings using the intermediate-layer pattern as a mask. | 10-09-2008 |
| 20080292992 | Photomask correcting method and manufacturing method of semiconductor device - A writing pattern data generating method for, in order to form a first photomask for use in a manufacturing method of a semiconductor device which including forming a first resist pattern on a mask film formed on a first film using the first photomask, forming a first mask pattern by etching the mask film, removing the first resist pattern, forming a second resist film on the mask film, forming a second resist pattern on the mask film, forming a second mask pattern by etching the mask film, removing the second resist pattern, and forming a first film pattern by etching the first film, the generating method comprising correcting a first pattern data in accordance with a difference between the first film pattern and the second mask pattern and a difference between the first resist pattern and the first mask pattern. | 11-27-2008 |
| 20090123875 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR PROCESSING ETCHING-TARGET FILM - The present invention provides a method for processing an etching-target film, which can achieve both of a highly precise dry etching process and a reduction of LER. A method for processing an etching-target film, comprises: forming, in sequence from the bottom, an organic mask layer | 05-14-2009 |
| 20100055617 | METHOD OF FORMING PATTERN IN SEMICONDUCTOR DEVICE - Disclosed is a method of forming a pattern in a semiconductor device. A first mask pattern to form dense lines and a second mask pattern to form spaces (parts where ends of lines are opposite to each other) are used when double patterning is applied to a photolithography process to form a line and space pattern on a semiconductor substrate. Therefore, when the line and space pattern is formed, a fine pattern may be formed without generating a bridge at parts where ends of lines are opposite to each other. | 03-04-2010 |
| 20100081092 | METHOD FOR FABRICATING METAL INTERCONNECTION OF SEMICONDUCTOR DEVICE - A method includes forming an interlayer dielectric layer including a contact plug over a semiconductor substrate, forming a metal layer, a hard mask layer, and an anti-reflection layer over the interlayer dielectric layer, forming a photoresist pattern over the anti-reflection layer, etching the anti-reflection layer in a primary etching process, using the photoresist pattern as an etching mask, to form an anti-reflection pattern, forming a first polymer layer over a surface of the anti-reflection pattern and the photoresist pattern by using polymer generated in the primary etching process, etching the hard mask layer in a secondary etching process, by using the anti-reflection pattern, the photoresist pattern, and the first polymer layer as an etching mask, to form a hard mask, and etching the metal layer in a tertiary etching process, by using the photoresist pattern, the anti-reflection pattern, the first polymer layer, and the hard mask as an etching mask, to form a metal interconnection. A first polymer layer is formed over the surface of the anti-reflection pattern and the photoresist pattern such that the design rule of the anti-reflection pattern is determined by polymer generated through the primary etching process. | 04-01-2010 |
| 20100099046 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device comprises forming a protective film over a photoresist pattern to improve the residual ratio of the photoresist pattern. The method comprises forming a photoresist pattern over an underlying layer and forming a protective pattern on an upper portion and sidewalls of the photoresist pattern. | 04-22-2010 |
| 20100112487 | MANUFACTURING A NARROW TRACK READ HEAD - Embodiments of the invention operate to narrow the track width of a read head used in a disk drive. In one embodiment, a magnetic read head has a track width of about 40 nm or less. The read head is fabricated by a method that includes fabricating a film stack from a substrate, a sensor material, a stop material, a first release material, a mask material, and a photo resist material. The mask material may include a masking substrate material and a second release material. The film stack is processed by forming a read head image in the photo resist material, removing portions of the film stack that lie outside the read head image of the photo resist material, stripping the film stack to remove the photo resist, mask and first release materials, and milling the sensor material according to the read head image. | 05-06-2010 |
| 20100304305 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING POLYMER HAVING NITROGEN-CONTAINING SILYL GROUP - There is provided a resist underlayer film for lithography causing no intermixing with a photoresist and having a dry etching rate higher than that of the photoresist, and a resist underlayer film forming composition for forming the underlayer film. A resist underlayer film forming composition for lithography comprising: a polymer containing a partial structure of Formula (1): | 12-02-2010 |
| 20110039212 | Circuitized substrate with internal resistor, method of making said circuitized substrate, and electrical assembly utilizing said circuitized substrate - A circuitized substrate which utilizes at least one internal (embedded) resistor as part thereof, the resistor comprised of a material including resin and a quantity of powders of nano-particle and/or micro-particle sizes. The resistor serves to decrease the capacitance in the formed circuit while only slightly increasing the high frequency resistance, thereby improving circuit performance through the substantial elimination of some discontinuities known to exist in structures like these. An electrical assembly (substrate and at least one electrical component) is also provided. | 02-17-2011 |
| 20110143285 | METHOD OF FABRICATING LIQUID CRYSTAL DISPLAY DEVICE - A method of fabricating a transflective type liquid crystal display device includes: forming gate and data lines with a gate insulating layer therebetween on a substrate and crossing each other to define a pixel region that includes a switching region, a reflective region, and a transmissive region; forming a thin film transistor corresponding to the switching region and connected to the gate and data lines; forming a first passivation layer on the thin film transistor; forming a reflective plate on the first passivation layer in the reflective region; forming a second passivation layer on the reflective plate; forming a pixel electrode on the second passivation layer and connected to a drain electrode of the thin film transistor; forming a third passivation layer on the pixel electrode. | 06-16-2011 |
| 20110287369 | RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICON HAVING ANION GROUP - There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hardmask. A resist underlayer film forming composition for lithography comprising a silane compound containing an anion group, wherein the silane compound containing an anion group is a hydrolyzable organosilane in which an organic group containing an anion group is bonded to a silicon atom and the anion group forms a salt structure, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The anion group may be a carboxylic acid anion, a phenolate anion, a sulfonic acid anion, or a phosphonic acid anion. The hydrolyzable organosilane may be a compound of Formula (1): R | 11-24-2011 |
| 20140302440 | NARROW FRAME TOUCH INPUT SHEET WITH GOOD ANTICORROSION PROPERTY AND MANUFACTURING METHOD THEREOF - A method of manufacturing a narrow frame touch input sheet having very good anticorrosion properties and suitable for a narrow frame capacitance type touch sensor having a double-layer transparent conductive film pattern. The method uses an electrical conductivity sheet obtained by sequentially forming transparent and light blocking conductive films, and first resist layers, on both sides of a transparent base sheet, exposing and developing the resist layers on both sides simultaneously, etching the transparent and light blocking films simultaneously, removing the resist layers, laminating second resist layers with anticorrosion agent on the revealed light blocking films, etching the light blocking conductive films in center windows and terminal portions to reveal the transparent films, and side etching revealed end faces of the light blocking films at center window and terminal portion boundaries to create visor structured second resist layers that are heat softened as an anticorrosion layer on the revealed faces. | 10-09-2014 |
| 20140315133 | METHOD FOR FABRICATING A CIRCUIT - A method for fabricating a circuit, by defining a first set of resist features on a substrate and corresponding to a first mask layout, followed by defining a second set of resist features on the substrate corresponding to a second mask layout, wherein the second set adds to the first set for rectifying an error in either mask layout. In another aspect, the method is by defining a first set of resist features on a substrate and corresponding to a first mask layout that has an error, etching the substrate while the first set protects selected regions, defining a second set of resist features on the substrate and corresponding to a second mask layout, followed by etching the substrate to selectively remove portions of the selected regions for rectifying the error. | 10-23-2014 |
| 20150064628 | METHODS FOR MAKING MICRO- AND NANO-SCALE CONDUCTIVE GRIDS FOR TRANSPARENT ELECTRODES AND POLARIZERS BY ROLL TO ROLL OPTICAL LITHOGRAPHY - Methods of micro- and nano-patterning substrates to form transparent conductive electrode structures or polarizers by continuous near-field optical nanolithography methods using a roll-type photomask or phase-shift mask are provided. In such methods, a near-field optical nanolithography technique uses a phase-shift or photo-mask roller that comprises a rigid patterned externally exposed surface that transfers a pattern to an underlying substrate. The roller device may have an internally disposed radiation source that generates radiation that passes through the rigid patterned surface to the substrate during the patterning process. Sub-wavelength resolution is achieved using near-field exposure of photoresist material through the cylindrical rigid phase-mask, allowing dynamic and high throughput continuous patterning. | 03-05-2015 |
