| Entries |
| Document | Title | Date |
|---|
| 20080199813 | Method for forming a photoresist pattern on a semiconductor wafer using oxidation-based catalysis - According to one exemplary embodiment, a method for forming a photoresist pattern on a semiconductor wafer includes forming a photoresist including an organic polymer matrix on the semiconductor wafer. The method further includes exposing the photoresist to a patterned radiation. The method further includes baking the photoresist after exposing the photoresist to the pattern radiation. The method further includes applying an oxidizing reagent to the photoresist to create the photoresist pattern corresponding to the patterned radiation. | 08-21-2008 |
| 20080220373 | Method for forming a photoresist-laminated substrate, method for plating an insulating substrate, method for surface treating of a metal layer of a circuit board, and method for manufacturing a multi layer ceramic condenser using metal nanoparticles aerosol - The present invention relates to a method for forming a photoresist-laminated substrate including: preparing a laminated substrate having an insulating substrate and a metal layer; coating with an aerosol of metal nanoparticles on the metal layer; laminating a photoresist film on the metal layer coated with the aerosol of metal nanoparticles. The method of the present invention is a environmentally friendly method since an aerosol of metal nanoparticles is used, differentiated from the conventional wet process. | 09-11-2008 |
| 20080220374 | METHOD AND STRUCTURE FOR IMPROVED ALIGNMENT IN MRAM INTEGRATION - A method for implementing alignment of a semiconductor device structure includes forming first and second sets of alignment marks within a lower level of the structure, the second set of alignment marks adjacent the first set of alignment marks. An opaque layer is formed over the lower level, including the first and second sets of alignment marks. A portion of the opaque layer corresponding to the location of said first set of alignment marks is opened so as to render the first set optically visible while the second set of alignment marks initially remains covered by the opaque layer. The opaque layer is patterned using the optically visible first set of alignment marks, wherein the second set of alignment marks remain available for subsequent alignment operations in the event the first set becomes damaged during patterning of the opaque layer. | 09-11-2008 |
| 20080248429 | METHOD OF FORMING A CONTACT HOLE - A method of forming a contact hole is provided. A pattern is formed in a photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a first opening. Another pattern is formed in another photo resist layer. The pattern is exchanged into a silicon photo resist layer to form a second opening. The pattern having the first, and second openings is exchanged into the interlayer dielectric layer, and etching stop layer to form the contact hole. The present invention has twice exposure processes and twice etching processes to form the contact hole having small distance. | 10-09-2008 |
| 20080248430 | Process for preparing a nano-carbon material field emission cathode plate - A nano-carbon material field emission cathode plate is prepared by an oxidation-reduction reaction, which includes immersing a substrate having a first metal layer thereon in a solution of a second metal salt with a nano-carbon material dispersed therein. A difference between the two standard redox potentials of the first metal and the second metal is so great that ions of the second metal in the solution are reduced to elemental metal while the first metal is oxidized, and thus a layer of the second metal is formed on the first metal layer with the nano-carbon material partially embedded in the second metal layer. | 10-09-2008 |
| 20080254392 | FLEXIBLE CIRCUIT WITH COVER LAYER - The invention relates to flexible circuits and more particularly to flexible printed circuits having cover layers. The cover layers may be a chemically-etchable adhesive polyimide. The cover layers may be patterned after they are applied to the flexible circuit substrate. | 10-16-2008 |
| 20080261155 | Metallic Air-Bridges - A lithographic method of producing an air-bridge ( | 10-23-2008 |
| 20080274430 | UV RADIATION BLOCKING PROTECTIVE LAYERS COMPATIBLE WITH THICK FILM PASTES - This invention relates to novel compositions comprising a protective polymer layer and a UV blocking agent. This is used in the fabrication of electronic devices using thick film pastes. The present invention is also an electronic device fabrication process using the compositions. The protective polymer layer is fabricated from materials, which are insoluble after irradiation in the ester-type solvents contained in the thick film paste. By appropriate selection of protective film polymers, the protective film can be compatible with the thick film paste and can be further used to shield portions of the thick film paste from UV irradiation. | 11-06-2008 |
| 20080292990 | Electronic device manufacture - New methods are provided for manufacturing a semiconductor device. Preferred methods of the invention include depositing a photoresist on a semiconductor substrate surface followed by imaging and development of resist coating layer; applying a curable organic or inorganic composition over the resist relief image; etching to provide a relief image of the resist encased by the curable composition; and removing the resist material whereby the curable organic or inorganic composition remains in a relief image of increased pitch relative to the previously developed resist image. | 11-27-2008 |
| 20080299492 | Exposure method and electronic device manufacturing method - An exposure method for exposing a bright-dark pattern onto each exposure region of a substrate via a projection optical system includes a position detection process for detecting positions of a plurality of microscopic regions in a unit exposure field of the substrate, a deformation calculation step of calculating a state of deformation in the unit exposure field based on information related to the positions of the plurality of microscopic regions obtained in the position detection step, and a shape modification step of modifying the shape of the bright-dark pattern to be exposed on the substrate based on the deformation state obtained in the deformation calculation step. The microscopic regions detected in the position detection step include a circuit pattern formed in the unit exposure field. | 12-04-2008 |
| 20080299493 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING DEVICE - An apparatus according to the present invention includes a vacuum chamber ( | 12-04-2008 |
| 20090004602 | Fabricating method of nano-ring structure by nano-lithography - The present invention is to provide a “fabricating method of nano-ring structure by nano-lithography” for fabricating out a new nano-ring structure in more miniature manner than that of the current fabricating facilities by directly using the current fabricating facilities without any alteration or redesign of the precision so that the number and density of the nano-ring structure in unit area or unit volume can be significantly increased in more evenness manner. | 01-01-2009 |
| 20090035704 | Underlayer Coating Composition Based on a Crosslinkable Polymer - The present invention relates to an underlayer coating composition capable of being crosslinked comprising a polymer, a compound capable of generating a strong acid, and optionally a crosslinker, where the polymer comprises at least one absorbing chromophore and at least one moiety selected from an epoxy group, an aliphatic hydroxy group and mixtures thereof. | 02-05-2009 |
| 20090042139 | Exposure method and electronic device manufacturing method - An exposure method enabling deformation occurring in a unit exposure field to be measured rapidly and accurately and enabling a plurality of patterns to be superimposed on a substrate with high accuracy. The exposure method of the present embodiment for exposing a bright-dark pattern on the substrate using a projection optical system includes a position detection process for detecting the positions of a plurality of position detection marks, relative to a substrate-in-plane-direction of the substrate, arranged in at least one functional element in a unit exposure field of the substrate, a deformation calculation process for calculating the state of deformation occurring in the unit exposure field based on information related to the positions of the position detection marks obtained in the position detection process, and a shape modification process for modifying the shape of the bright-dark pattern to be exposed on the substrate based on the deformation state obtained in the deformation calculation process. | 02-12-2009 |
| 20090042140 | ANTI-REFLECTIVE POLYMER, ANTI-REFLECTIVE COMPOSITION CONTAINING THE SAME, AND METHOD FOR FORMING PATTERN USING THE SAME - A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer for crosslinking is useful in an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process. | 02-12-2009 |
| 20090042141 | ANTI-REFLECTIVE POLYMER, ANTI-REFLECTIVE COMPOSITION CONTAINING THE SAME, AND METHOD FOR FORMING PATTERN USING THE SAME - A polymer for crosslinking an anti-reflective film has a high refractive index. An anti-reflective composition containing the polymer is useful in a damascene process and an immersion lithography process using ArF (193 nm) of a semiconductor device manufacturing process. | 02-12-2009 |
| 20090042142 | ORGANIC TRIODES WITH NOVEL GRID STRUCTURES AND METHOD OF PRODUCTION - An organic semiconductor device is provided. The device has a first electrode and a second electrode, with an organic semiconductor layer disposed between the first and second electrodes. An electrically conductive grid is disposed within the organic semiconductor layer, which has openings in which the organic semiconductor layer is present. At least one insulating layer is disposed adjacent to the electrically conductive grid, preferably such that the electrically conductive grid is completely separated from the organic semiconductor layer by the insulating layer. Methods of fabricating the device, and the electrically conductive grid in particular, are also provided. In one method, openings are formed in an electrically conductive layer with a patterned die, which is then removed. In another method, an electrically conductive layer and a first insulating layer are etched through the mask to expose portions of a first electrode. In yet another method, a patterned die is pressed into a first organic semiconductor layer to create texture in the surface of the first organic semiconductor layer, and then removed. An electrically conductive material is then deposited onto the first organic semiconductor layer from an angle to form a grid having openings as a result of the textured surface and the angular deposition. In each of the methods, insulating layers are preferably deposited or otherwise formed during the process to completely separate the electrically conductive layer from previously and subsequently deposited organic semiconductor layers. | 02-12-2009 |
| 20090047604 | Lithographic apparatus and device manufacturing method - A lithographic apparatus and method is disclosed to reduce the exposure time that a substrate spends within a main lithographic apparatus by pre- (or post-) exposing one or more edge devices on the substrate. Because an edge device does not ultimately yield a useful device, it can be exposed with a lithographic apparatus that has a lower resolution than that used to expose one or more of the other, complete devices produced from the substrate. Therefore, the pre- (or post-) exposure of an edge device can be performed using a less complex, and less expensive, lithographic device. | 02-19-2009 |
| 20090053654 | Mask and Method for Patterning a Semiconductor Wafer - A method for generating a mask pattern is provided. A target lithographic pattern comprising a plurality of first geometric regions is provided, wherein the regions between the plurality of first geometric regions comprise first spaces. The target lithographic pattern is transformed, and the transformed pattern is decomposed into a first pattern and a second pattern. | 02-26-2009 |
| 20090061360 | MATERIAL FOR RESIST PROTECTIVE FILM FOR IMMERSION LITHOGRAPHY - To provide a resist protective film material for immersion lithography. | 03-05-2009 |
| 20090061361 | Integrated Circuit Manufacturing Methods with Patterning Device Position Determination - Methods of manufacturing an integrated circuit by a lithographic apparatus are disclosed. The methods include patterning a radiation beam with a patterning device, projecting the patterned beam onto a substrate using a projection system, and determining the position of the patterning device. In one example, the patterning device's position relative to the projection system is determined by measuring the position of the patterning device's support structure. In another example, the position can be determined by measuring a position of the patterning device relative to its support and by measuring a position of the support. In another example, a Z-position of the patterning device is determined by directing at least one beam of radiation onto a part of the patterning device located outside a pattern area. This can be done by directing a pair of laser beams from sensors on the projection system to reflecting strips on the patterning device. | 03-05-2009 |
| 20090068597 | EXPOSURE METHOD AND APPARATUS, AND ELECTRONIC DEVICE MANUFACTURING METHOD - An exposure method provided is a high-resolution and inexpensive method suitable for use in formation of a fine pattern for making up an electronic device. A diffraction grating is located in proximity to a wafer or the like for making up an electronic device, and illumination light with a predetermined incidence angle property is applied onto the diffraction grating to effect exposure on the wafer. The exposure is done while changing a positional relation between the semiconductor wafer and the diffraction grating according to need. | 03-12-2009 |
| 20090068598 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD, DEBRIS COLLECTION MECHANISM AND DEBRIS COLLECTION METHOD, AND METHOD FOR PRODUCING DISPLAY PANEL - A laser processing apparatus is provided for patterning with laser light a resin film or a metal film formed on a substrate. The apparatus includes a laser light source; and a debris collection device having a transmission window through which the laser light is transmitted, a vortex generation mechanism generating a vortex gas flow by allowing gas to flow into a region near a laser light-irradiated area of the resin film or the metal film, and a screening device having an opening through which the incident laser light passes and screening a flow of debris. The mechanism is placed close to the resin film or the metal film on the substrate. Debris generated by laser light irradiation and before and after being stacked on the object film is entrained in the vortex gas flow generated by the vortex generation mechanism and is exhausted to outside through the screening device. | 03-12-2009 |
| 20090068599 | METHOD OF MANUFACTURING IMAGE SENSOR - Provided is a method of manufacturing image sensor capable of maximizing light condensing efficiency so that the light input through a micro-lens is condensed onto a light receiving element. According to the present invention, inner micro-lenses or a condensing efficiency of the light input through the micro-lens. Therefore, light condensing efficiency of the light condensed onto the light receiving element in the image sensor can be improved. | 03-12-2009 |
| 20090075209 | DEVICE MANUFACTURING APPARATUS AND DEVICE MANUFACTURING METHOD - An apparatus for manufacturing a device comprises a processing unit configured to perform a process for manufacturing the device, a conveying unit configured to convey an article to the processing unit, and a controller configured to control the conveying unit based on a job queue. Information for controlling conveyance of an article for a job next to a job for which the processing unit is performing the process is registered in the job queue. The controller is configured to control the conveying unit so as to convey the article for the next job in advance, based on the information. | 03-19-2009 |
| 20090075210 | EXPOSURE APPARATUS AND METHOD OF MANUFACTURING DEVICE - An exposure apparatus which includes a projection optical system configured to project light from an original onto a substrate and performs an exposure of the substrate to light via a liquid that fills a gap between a final optical element of the projection optical system and the substrate, the apparatus comprises a controller configured so that 1) an exposure condition for the substrate is input to the controller, the exposure condition including a shot area layout and a dose for a shot area, and 2) the controller obtains a contact time during which the shot area is to be kept in contact with the liquid based on the input exposure condition, and corrects the input dose based on the obtained contact time. | 03-19-2009 |
| 20090075211 | Immersion lithography fluid control system - An immersion lithography apparatus includes an optical member, a gap defined between the optical member and a surface disposed opposite the optical member being filled with an immersion liquid, and a fluid control device including a gas outlet through which a gas is supplied to prevent the immersion liquid from entering a surround area external to an exposure area. A flow velocity of the gas supplied from the gas outlet depends on a contact angle between the immersion liquid and the surface. | 03-19-2009 |
| 20090075212 | Immersion lithography fluid control system - An immersion lithography apparatus includes an optical member, a gap defined between the optical member and a surface disposed opposite the optical member being filled with an immersion liquid, and a fluid control device including a gas outlet through which a gas is supplied to prevent the immersion liquid from entering a surround area external to an exposure area. A flow velocity of the gas supplied from the gas outlet depends on a contact angle between the immersion liquid and the surface. | 03-19-2009 |
| 20090092925 | Projection optical system, exposure apparatus, and exposure method - An immersion projection optical system that prevents leakage of a liquid (immersion liquid) into the optical system and maintains satisfactory imaging capability. The projection optical system of the present invention is a projection optical system that projects a reduced image of a first plane onto a second plane through a liquid. The projection optical system includes an interface optical lens (Lb) having a side towards the first plane that contacts a gas and a side towards the second plane that contacts the liquid. The interface optical element includes a light entering surface (Lba), which has a convex shape facing towards the first plane, and a groove (Gr), which is formed to surround an effective region in a light emitting surface of the interface optical element. | 04-09-2009 |
| 20090111057 | PHOTOIMAGEABLE BRANCHED POLYMER - Novel, developer-soluble anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a multi-functional acid reacted with a multi-functional vinyl ether to form a branched polymer or oligomer. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light and post-exposure baking, the cured polymers/oligomers will decrosslink and depolymerize, rendering the layer soluble in typical photoresist developing solutions (e.g., alkaline developers). | 04-30-2009 |
| 20090123873 | Lamination for Printed Photomask - A method for masking regions of photoresist in the manufacture of a soldermask for printed circuit boards is disclosed. Following application of photoresist over patterned traces on a substrate, a sheet-like thin film is applied over the photosensitive material. The thin film may adhere to the photosensitive material by way of the adhesive state of the photosensitive material or by way of an adhesive applied to the photosensitive material or the thin film or carried by the thin film. Digital mask printing may proceed on the surface of the thin film. The photosensitive material may then be exposed through the printed photomask, the thin film (with photomask) removed, and the photosensitive material developed. | 05-14-2009 |
| 20090123874 | EXPOSURE METHOD, EXPOSURE APPARATUS, AND METHOD FOR MANUFACTURING DEVICE - An exposure apparatus for efficiently exposing patterns onto corresponding regions of a substrate. The apparatus includes a first wafer stage, a second wafer stage, an alignment sensor which detects marks of wafers on the wafer stages, a projection optical system which irradiates a first region of a wafer with first exposure light, and an imperfect shot region exposure system which irradiates a second region of a wafer that differs from the first region with second exposure light. The imperfect shot region exposure system irradiates the second region of a wafer held on the second wafer stage with the second exposure light. | 05-14-2009 |
| 20090136874 | Method for manufacturing printed circuit board - A method of manufacturing a printed circuit board is disclosed. The method, which includes forming a base pattern over one side of a negative photoresist, exposing the one side, attaching an insulation layer on the one side, developing the negative photoresist such that the base pattern is uncovered, and forming a circuit pattern over the base pattern, can increase the thickness of the circuit pattern and strengthen the adhesion between the circuit pattern and the insulation layer. | 05-28-2009 |
| 20090142703 | Display Member Exposing Method and Plasma Display Member Manufacturing Method - A manufacturing method for a plasma display member wherein generation of defects such as interruption and short-circuit of a pattern obtained after exposure and development is suppressed and yield is improved, even when a foreign material is adhered on a photomask or photomask is scratched. An exposing method for a display member wherein a display member having a photosensitive layer formed on a base substrate is exposed through a photomask having a desired pattern. The exposing method for the display member is characterized in that the photomask and the base substrate are relatively shifted during exposure operation. | 06-04-2009 |
| 20090155723 | PROCESS FOR FORMING AN ORGANIC ELECTRONIC DEVICE INCLUDING AN ORGANIC DEVICE LAYER - A process of forming an electronic device is disclosed. An organic device layer is formed. The organic device layer includes a charge-selective material and a radiation sensitizer and has a first electrical conductivity and a first surface energy. First portions of the organic device layer are selectively exposed to radiation. The electrical conductivity and surface energy of the first portions of the organic device layer are modified. | 06-18-2009 |
| 20090162790 | PHOTORESIST DOUBLE PATTERNING - A method for etching an etch layer formed on a substrate is provided. A first photoresist (PR) mask with first mask features is provided on the etch layer. A protective coating is provided on the first PR mask by a process including at least one cycle. Each cycle includes (a) a deposition phase for depositing a deposition layer over the surface of the first mask features using a deposition gas, and (b) a profile shaping phase for shaping the profile of the deposition layer using a profile shaping gas. A liquid PR material is applied over the first PR mask having the protective coating. The PR material is patterned into a second mask features, where the first and second mask features form a second PR mask. The etch layer is etched though the second PR mask. | 06-25-2009 |
| 20090162791 | ELECTRONIC DEVICE AND METHOD OF MANUFACTURING THEREOF - The device has a carrier and an electric element. The carrier has a first and an opposed side and is provided with an connection layer, an intermediate layer and contact pads. The element is present at the first side and coupled to the connection layer. It is at least partially encapsulated by an encapsulation that extends into isolation areas between patterns in the intermediate layer. A protective layer is present at the second side of the carrier, which covers an interface between the contact pads and the intermediate layer. | 06-25-2009 |
| 20090170030 | Method of making a pillar pattern using triple or quadruple exposure - Methods of making pillar shaped device array using a triple or quadruple exposure technique are described. A plurality of pillar shaped devices are formed arranged in a hexagonal or rectangular pattern. | 07-02-2009 |
| 20090186302 | METAL OR METAL COMPOUND PATTERN AND FORMING METHOD OF PATTERN, AND ELECTRON EMITTING DEVICE, ELECTRON SOURCE, AND IMAGE-FORMING APPARATUS USING THE PATTERN - The present invention is to provide a method for forming various patterns such as a metal or metal compound pattern, in which the amounts of the materials constituting the pattern which are removed during the formation step can be suppressed to the minimum. The method comprises a resin pattern forming step of forming on the surface of a substrate a resin pattern capable of absorbing a solution containing metal components, an absorbing step of dipping the resin pattern in the solution containing metal components to make the resin pattern absorb the solution containing metal components, a washing step of washing the substrate having formed thereon the resin pattern that has absorbed the solution containing metal components, and a burning step of burning the resin pattern after washing. | 07-23-2009 |
| 20090191484 | PHOTOSENSITIVE RESIN COMPOSITION CONTROLLING SOLUBILITY AND PATTERN FORMATION METHOD OF DOUBLE-LAYER STRUCTURE USING THE SAME - The present invention relates to a new photosensitive resin composition capable of solubility control and a pattern formation method of a double-layer structure using the same, and more particularly to a photosensitive resin composition that can control the | 07-30-2009 |
| 20090191485 | MONOMER, RESIN, RESIST COMPOSITION USING THE RESIN, AND METHOD PRODUCING SEMICONDUCTOR DEVICE USING THE RESIST COMPOSITION - A monomer, which is represented by General Formula I: | 07-30-2009 |
| 20090208875 | SURFACE POSITION DETECTING APPARATUS, EXPOSURE APPARATUS, AND DEVICE MANUFACTURING METHOD - A surface position detecting apparatus disclosed herein has a light-sending optical system SL to guide light to a detection target surface, a light-receiving optical system to guide the light to a light-receiving surface, a detector arranged on the light-receiving surface, a splitter to split the light guided to the detection target surface W, into measurement light and reference light on a field basis, and a combiner to combine the measurement light traveling via the detection target surface W toward the light-receiving optical system, with the reference light traveling toward the light-receiving optical system without passing via the detection target surface W, on a field basis; and the detector independently detects the reference light and the measurement light on the light-receiving surface. | 08-20-2009 |
| 20090233236 | METHOD FOR FABRICATING SELF-ALIGNED NANOSTRUCTURE USING SELF-ASSEMBLY BLOCK COPOLYMERS, AND STRUCTURES FABRICATED THEREFROM - In one embodiment, the present invention provides a method for patterning a surface that includes forming a block copolymer atop a heterogeneous reflectivity surface, wherein the block copolymer is segregated into first and second units; applying a radiation to the first units and second units, wherein the heterogeneous reflectivity surface produces an exposed portion of the first units and the second units; and applying a development cycle to selectively remove at least one of the exposed first and second units of the segregated copolymer film to provide a pattern. | 09-17-2009 |
| 20090233237 | Process For Preparing Conductive Material - It is to provide a process for preparing a conductive material in which transparency and conductivity are both high, and storage stability is high, and further, in a process for preparing a conductive material utilizing ultra fine silver particles, to provide a process for preparing a conductive material having high conductivity without requiring a calcination step which has conventionally been required. | 09-17-2009 |
| 20090246703 | Lithographic Apparatus and Device Manufacturing Method - A lithographic apparatus includes an illumination system, a support, a substrate table, a projection system, and an actuator. The illumination system is configured to condition a radiation beam. The support is constructed to support a patterning device. The patterning device is capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam. The substrate table is constructed to hold a substrate. The projection system is configured to project the patterned radiation beam onto a target portion of the substrate. The actuator is constructed and arranged to exert a force on a part of the lithographic apparatus via an elongated structure. The elongated structure is provided with a vibration damper constructed and arranged to damp vibrations in the elongated structure. | 10-01-2009 |
| 20090253077 | Anti-reflection film forming material, and method for forming resist pattern using the same - The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. | 10-08-2009 |
| 20090263747 | THREE AXIS LINEAR ACTUATOR | 10-22-2009 |
| 20090274980 | METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE BY USING DOUBLE PATTERNING PROCESS WHICH USES ACID DIFFUSION - A method of forming fine patterns of a semiconductor device according to a double patterning process that uses acid diffusion is provided. In this method, a plurality of first mask patterns are formed on a substrate so as to be separated from one another. A capping film including an acid source is formed on sidewalls and an upper surface of each of the plurality of first mask patterns. A second mask layer is formed on the capping films. A plurality of acid diffused regions are formed within the second mask layer by diffusing acid obtained from the acid source from the capping films into the second mask layer. A plurality of second mask patterns are formed of residual parts of the second mask layer which remain in the first spaces after removing the acid diffused regions of the second mask layer. | 11-05-2009 |
| 20090286184 | METHOD FOR MANUFACTURING CONDUCTIVE MEMBER PATTERN - A method capable of easily and simply manufacturing a conductive member pattern such as a nano-size fine wiring or electrode is disclosed. Specifically, the disclosed method for manufacturing a conductive member pattern includes the steps of: forming an ion-exchangeable resin pattern on a substrate by using a photosensitive resin; making the resin pattern absorb a metal component-containing solution; and baking the resin pattern having absorbed the metal component-containing solution, wherein the width and the ratio “width/height” of the resin pattern before baking are 1 μm or less and 5 or less, respectively. | 11-19-2009 |
| 20090305165 | WAFER EXPOSING METHOD, EUV EXPOSING APPARATUS, AND EB EXPOSING APPARATUS - A wafer exposing method comprising EUV-exposing a product area, which is formed as a product chip, on a wafer and EB-exposing a peripheral area on the wafer, wherein the EB exposure of a wafer different from the wafer being EUV-exposed is performed while the EUV exposure of the wafer is performed. | 12-10-2009 |
| 20090317747 | ANTI-REFLECTIVE COATINGS USING VINYL ETHER CROSSLINKERS - Novel, wet developable anti-reflective coating compositions and methods of using those compositions are provided. The compositions comprise a polymer and/or oligomer having acid functional groups and dissolved in a solvent system along with a crosslinker and a photoacid generator. The preferred acid functional group is a carboxylic acid, while the preferred crosslinker is a vinyl ether crosslinker. In use, the compositions are applied to a substrate and thermally crosslinked. Upon exposure to light, the cured compositions will decrosslink, rendering them soluble in typical photoresist developing solutions (e.g., alkaline developers). | 12-24-2009 |
| 20100021848 | METHOD FOR FORMING PATTERN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a method for forming a pattern including: applying a photosensitive resin onto a film on a wafer substrate; partly exposing the photosensitive resin to light and developing the photosensitive resin to form a first pattern having an opening portion; applying a photo-curable material onto the film exposed by the opening portion of the first pattern; bringing one face of an optically-transmissive template having a second pattern formed on the one face into contact with the photo-curable material, the second pattern including projections and reentrants; irradiating the photo-curable material with light; and separating the template from the photo-curable material. | 01-28-2010 |
| 20100021849 | Method of Forming Patterns of Semiconductor Device - In a method of forming patterns of a semiconductor device, a semiconductor substrate defining photoresist patterns formed over a target etch layer is provided. An auxiliary layer is formed over the semiconductor substrate and the photoresist patterns. The auxiliary layer formed on a surface of the photoresist patterns is denatured into first auxiliary patterns. A photoresist film is formed over the semiconductor substrate, the first auxiliary patterns, and the auxiliary layer. The auxiliary layer formed below the photoresist film is denatured into a second auxiliary pattern. Here, the auxiliary layer remains only between the photoresist patterns. Etch mask patterns, including the photoresist patterns and the auxiliary layer, are formed by removing the photoresist film and the first and second auxiliary patterns. | 01-28-2010 |
| 20100035186 | MANUFACTURING A GRAPHENE DEVICE AND A GRAPHENE NANOSTRUCTURE SOLUTION - Techniques for manufacturing a graphene structure solution and a graphene device are provided. A uniform graphene nanostructure solution is produced by applying anisotropic etching on a multi-layered graphene using an oxide nanowire as a mask. A graphene device is manufactured by dipping a substrate with a pattern of a molecule layer in a graphene nanostructure solution so that graphenes are aligned on the substrate with the pattern. | 02-11-2010 |
| 20100040981 | Tuning Optical Cavities - A tunable optical cavity can be tuned by relative movement between two reflection surfaces, such as by deforming elastomer spacers connected between mirrors or other light-reflective components that include the reflection surfaces. The optical cavity structure includes an analyte region in its light-transmissive region, and presence of analyte in the analyte region affects output light when the optical cavity is tuned to a set of positions. Electrodes that cause deformation of the spacers can also be used to capacitively sense the distance between them. Control circuitry that provides tuning signals can cause continuous movement across a range of positions, allowing continuous photosensing of analyte-affected output light by a detector. | 02-18-2010 |
| 20100068652 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - To include transferring simultaneously by lithography a first region from a position opposed between a first constituent member and a second constituent member in a longitudinal direction of a third constituent member to the end of a side of the first constituent member and a first mask pattern for forming the first constituent member, onto a semiconductor substrate, transferring simultaneously by lithography a second region including regions other than the first region out of the third constituent member and a second mask pattern for forming the second constituent member, onto the semiconductor substrate, and forming the first constituent member, the second constituent member, and the third constituent member on the semiconductor substrate by using the first and second mask patterns. | 03-18-2010 |
| 20100081091 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to an aspect of the present invention, there is provided a method for manufacturing a semiconductor device, the method including; sequentially forming a first film and a second film on a base film; processing the second film, thereby forming a second pattern; processing the first film with the second pattern, thereby forming a first pattern; removing the second pattern; depositing a third film on the base film and the first pattern; processing the third film, thereby forming a third pattern on side walls of the first pattern; removing the first pattern; and processing the base film with the third pattern; wherein, when processing the third film, a process condition is adjusted based on at least one information of a size of the second pattern and a size of the first pattern. | 04-01-2010 |
| 20100092889 | Mandrel - Pixel wells and a grid of electrical lines including electrical bridges are formed using an ultraviolet transparent mandrel having a three-dimensional surface and an integrated mask. | 04-15-2010 |
| 20100143847 | PHOTOSENSITIVE SELF-ASSEMBLED MONOLAYER FOR SELECTIVE PLACEMENT OF HYDROPHILIC STRUCTURES - A photosensitive monolayer is self-assembled on an oxide surface. The chemical compound of the photosensitive monolayer has three components. A first end group provides covalent bonds with the oxide surface for self assembly on the oxide surface. A photosensitive group that dissociates upon exposure to ultraviolet radiation is linked to the first end group. A second end group linked to the photosensitive group provides hydrophobicity. Upon exposure to the ultraviolet radiation, the dissociated photosensitive group is cleaved and forms a hydrophilic derivative in the exposed region, rendering the exposed region hydrophilic. Carbon nanotubes or nanocrystals applied in an aqueous dispersion are selectively attracted to the hydrophilic exposed region to from electrostatic bonding with the hydrophilic surface of the cleaved photosensitive group. | 06-10-2010 |
| 20100151391 | METHOD AND APPARATUS FOR HIGH DENSITY STORAGE OF ANALOG DATA IN A DURABLE MEDIUM - Analog data such as text and images are stored in microscopic analog format on a disk surface capable of maintaining the information for 1000 years or more whereby simple optical magnification will result in one being able to read the information formed therein. For a disk read by backlighting, as with microfiche, a photosensitive material is overlayed on hard metal surface which in turn is formed on a transparent glass or quartz material. A laser beam is focused on certain desired portions of the photosensitive material and the exposed material and underlying hard metal layer etched off to form pits down to the transparent layer corresponding to the analog information. The resulting disk can then be used to produce archival copies and distribution copies using hot embossing or other disclosed techniques. | 06-17-2010 |
| 20100178612 | LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A lithographic apparatus includes a support constructed to support a patterning device for imparting a radiation beam with a pattern in its cross-section to form a patterned radiation beam and a substrate table constructed to hold a substrate. A projection system projects the patterned radiation beam onto a target portion of the substrate. The patterning device includes one or more alignment patterns, the lithographic apparatus including a secondary illumination system effective to illuminate each alignment pattern with radiation separate from said radiation beam, the projection system projecting an image of each alignment pattern onto the substrate table. The substrate table includes a number of sensor arrangements, each sensitive to the projected image of one of said alignment patterns. | 07-15-2010 |
| 20100183983 | PROCESS FOR MANUFACTURING ELECTRONIC DEVICE - A process of this invention contains forming a resin composition containing a filler and a photocurable resin over a substrate (a transparent substrate | 07-22-2010 |
| 20100190111 | CONDUCTIVE FILM AND METHOD FOR PRODUCING THE SAME - Disclosed is a method for producing a conductive film, which includes a silver metal forming step for forming a silver metal portion by exposing and developing a photosensitive material which has a silver salt-containing layer containing a silver salt on a supporting body, and a smoothing step for smoothing the silver metal portion. The smoothing step is performed by calender roll at a line pressure of not less than 1960 N/cm (200 kgf/cm). Consequently, the surface resistance of the film after development can be reduced in production of a conductive film which is effective for shielding electromagnetic waves. | 07-29-2010 |
| 20100196828 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A film which becomes an outgassing generation source under reduced pressure or in a vacuum is formed on a substrate. A resist film an outgassing generation amount per unit area of which is smaller than the film under reduced pressure or in a vacuum is formed on the film in such a manner that the film is not exposed. The resist film is exposed by using pattern light of extreme ultraviolet (EUV) light. The resist film is developed. The substrate is processed by using the resist film and the film as a mask or by using the film as a mask. | 08-05-2010 |
| 20100203453 | METHOD FOR PRODUCING CONDUCTIVE FILM - A conductive film producing method includes a metallic silver forming step of exposing and developing a photosensitive material having a 95-μm-thick long support and thereon a silver salt-containing emulsion layer, thereby forming a metallic silver portion to prepare a conductive film precursor, and a smoothing treatment step of subjecting the conductive film precursor to a smoothing treatment to produce a conductive film. In the smoothing treatment, the conductive film precursor is pressed by first and second calender rolls facing each other, and the first calender roll is a resin roll to be brought into contact with the support. The method satisfies the condition of ½≦P1/P2≦1, wherein P1 represents a conveying force applied when the conductive film precursor is introduced to an area where the smoothing treatment step is conducted, and P2 represents a conveying force applied when the smoothing-treated conductive film is discharged from the area. | 08-12-2010 |
| 20100203454 | ENHANCED TRANSPARENT CONDUCTIVE OXIDES - A method of engineering of enhanced transparent conducting oxides by incorporating discrete metallic particles and structures, nonmetallic, organic and inorganic metamaterials or nanostructures in order to manipulate optical, thermal, electronic or electrical energy, properties or effects. A method of using transparent conducting oxides (TCO) incorporating discrete metallic particles and structures, nonmetallic, organic or inorganic metamaterials or nanostructures for any purpose including to manipulate optical, thermal, electronic or electrical energy, properties or effects in or on any material, substrate, or device. | 08-12-2010 |
| 20100209852 | TRACK NOZZLE SYSTEM FOR SEMICONDUCTOR FABRICATION - The present disclosure provides a method for fabricating a semiconductor device using a track pipeline system. The method includes storing a plurality of chemicals in a plurality of storage units of the system, wherein each storage unit is operable to store one of the chemicals, mixing the chemicals into a mixture, and dispensing the mixture onto a wafer using a nozzle of the system. | 08-19-2010 |
| 20100248152 | Using Electric-Field Directed Post-Exposure Bake for Double-Patterning (D-P) - The invention provides a method of processing a substrate using Double-Patterning (D-P) processing sequences and Electric-Field Enhanced Layers (E-FELs). The D-P processing sequences and E-FELs can be used to create lines, trenches, vias, spacers, contacts, and gate structures using a minimum number of etch processes. | 09-30-2010 |
| 20100255421 | Method for forming resist pattern and method for manufacturing semiconductor device - In order to suppress variation of a resist pattern size caused by a temperature unevenness at a prebaking process, applying a resist of a positive type or a negative type on a base substrate, prebaking, exposing, post-exposure baking, and forming the resist to be a predetermined shape by developing the resist are carried out. The prebaking is carried out at a temperature equal to or more than a detachment starting temperature of a protective group of a base resin included in the resist in a case where the resist is the positive type. In a case where the resist is the negative type, the prebaking is carried out at a temperature equal to or more than a cross-linking starting temperature of a cross-linker in a base resin included in the resist. | 10-07-2010 |
| 20100291485 | NANOSCALE MOLECULE SYNTHESIS - This invention relates to nanoscale molecule synthesis, including three-dimensional addressable arrays of biopolymeric nucleic acids and processes for manufacturing such arrays. Such arrays can be functionalized with complementary chemical reactive probes to provide catalytic enzymes. | 11-18-2010 |
| 20110020752 | EXTREME ULTRAVIOLET RADIATION SOURCE AND METHOD FOR PRODUCING EXTREME ULTRAVIOLET RADIATION - A radiation source is constructed and arranged to produce extreme ultraviolet radiation. The radiation source includes a chamber, a first electrode at least partially contained in the chamber, a second electrode at least partially contained in the chamber, and a supply constructed and arranged to provide a discharge gas to the chamber. The first electrode and the second electrode are configured to create a discharge in the discharge gas to form a plasma so as to generate the extreme ultraviolet radiation. The source also includes a gas supply constructed and arranged to provide a gas at a partial pressure between about 1 Pa and about 10 Pa at a location near the discharge. The gas is selected from the group consisting of hydrogen, helium, and a mixture of hydrogen and helium. | 01-27-2011 |
| 20110123930 | Ceramic substrate preparation process - An etching-free ceramic substrate preparation process includes the step of bonding a dry film to one side of a ceramic plate, the step of applying an exposing and developing process to the dry film to form a predetermined circuit layout on the dry film, the step of coating a thin-thickness first metal layer on the ceramic plate and the dry film, the step of forming a copper layer on the first metal layer by a coating technique, the step of cutting/grinding the dry film, the first metal layer and the copper layer to remove the dry film from the ceramic plate, the step of obtaining the desired height of the copper layer on the ceramic plate, and the step of forming a second metal layer on the surface of the copper layer by a coating technique. | 05-26-2011 |
| 20110159440 | CLEANING RETICLE, METHOD FOR CLEANING RETICLE STAGE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a method for cleaning a reticle stage of an extreme ultraviolet exposure apparatus is disclosed. The method can include pressing a particle catching layer of a cleaning reticle onto the reticle stage, and the cleaning reticle includes the particle catching layer formed on a substrate. The method can include peeling the cleaning reticle from the reticle stage. The method can include removing the particle catching layer from the substrate. I addition, the method can include forming a new particle catching layer on the substrate having the particle catching layer removed. | 06-30-2011 |
| 20110159441 | LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD - A immersion lithographic apparatus is disclosed in which one or more liquid diverters are positioned in a space surrounded by a liquid confinement structure. A function of the liquid diverter(s) is to hinder the formation of one or more recirculation zones of immersion liquid which may lead to variations in refractive index of the immersion liquid in the space and thereby imaging errors. | 06-30-2011 |
| 20110189613 | Exposure apparatus, exposure method, and device fabrication method - An exposure apparatus forms an immersion area by supplying a liquid onto a part of a substrate, and forms a prescribed pattern on the substrate through the liquid. A spare immersion area, which is capable of holding part of the liquid on the substrate, is formed at the outer circumference of the immersion area. It is possible to prevent the separation of the liquid, which is disposed between a lower surface of a projection optical system and a substrate surface, from the lower surface of the projection optical system in accordance with the relative movement of the projection optical system and the substrate. | 08-04-2011 |
| 20110200944 | MANUFACTURING METHOD OF EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - A manufacturing method of an exposure apparatus includes adjusting a positioning device that determines a positional relation at the time of docking between a body and a stage module such that a positional relation between an absolute reference surface of a metrology frame of the body and a stage position reference surface of the stage module becomes a desired relation. Accordingly, after that, only by docking the body and the stage module with each other via the positioning device, the positional relation between the absolute reference surface of the body and the stage position reference surface of the stage module becomes a desired relation. | 08-18-2011 |
| 20110262866 | EXPOSURE APPARATUS AND DEVICE MANUFACTURING METHOD - An exposure apparatus which projects exposure light from a pattern of an illuminated original onto a substrate, comprises a projection system including an optical element and configured to project the exposure light onto the substrate, an enclosure configured to enclose the projection system, and a cleaning mechanism configured to clean the optical element by irradiating the optical element with ultraviolet light under an environment in which oxygen is present within the enclosure, the cleaning mechanism including a light source configured to generate ultraviolet light, a tubular member including an exit window and configured to partially enclose an optical path between the light source and the optical element, and a regulating device configured to regulate an environment of a space inside the tubular member so that a partial pressure of oxygen becomes lower in the space inside the tubular member than in a space which is outside the tubular member. | 10-27-2011 |
| 20110269074 | NOVEL POLYMERS AND PHOTORESIST COMPOSITIONS - New polymers are provided comprising (i) one or more covalently linked photoacid generator moieties and (ii) one or more photoacid-labile groups, wherein the one or more photoacid generator moieties are a component of one or more of the photoacid-labile groups. Preferred polymers of the invention are suitable for use in photoresists imaged at short wavelengths such as sub-200 nm, particularly 193 nm. | 11-03-2011 |
| 20110287367 | METHOD AND APPARATUS FOR VERIFYING STITCHING ACCURACY OF STITCHED CHIPS ON A WAFER - A method for verifying stitching accuracy of a stitched chip on a wafer is disclosed. Initially, a set of test structures are inserted within a reticle layout. An exposure program is executed to control a photolithography equipment having a stepper to perform multiple exposures of the reticle on a wafer to generate a stitched chip on the wafer. Electrical measurements are then performed on the test structures at actual stitch boundaries of the stitched chip to evaluate stitching accuracy of the stitched chip. | 11-24-2011 |
| 20120077127 | Methods Of Forming Patterns - Some embodiments include methods of forming patterns in which a block copolymer-containing composition is formed over a substrate, and is then patterned to form a first mask. The block copolymer of the composition is subsequently induced into forming a repeating pattern within the first mask. Portions of the repeating pattern are then removed to form a second mask from the first mask. The patterning of the block copolymer-containing composition may utilize photolithography. Alternatively, the substrate may have regions which wet differently relative to one another with respect to the block copolymer-containing composition, and the patterning of the first mask may utilize such differences in wetting in forming the first mask. | 03-29-2012 |
| 20120077128 | SUBSTRATE EDGE TREATMENT FOR COATER/DEVELOPER - A method of substrate edge treatment includes forming a processing target film on a treatment target substrate, applying an energy line to a predetermined position on the processing target film to form a latent image on the processing target film, heating the treatment target substrate in which the latent image is formed on the processing target film, developing the processing target film after the heating, inspecting whether a residue is present at an edge of the treatment target substrate after the developing, and cleaning an end of the treatment target substrate to remove the residue at the edge of the treatment target substrate determined to be defective in the inspecting. | 03-29-2012 |
| 20120107745 | VIA STRUCTURE IN MULTI-LAYER SUBSTRATE AND MANUFACTURING METHOD THEREOF - Disclosed is a via structure in a multi-layer substrate, comprising a first metal layer, a dielectric layer and a second metal layer. The first metal layer has an upper surface. The dielectric layer covers the first metal layer in which a via is opened to expose the upper surface. The second metal layer is formed in the via and contacts an upper surface and an inclined wall of the via. A contacting surface of the second metal layer has a top line lower than the upper edge of the inclined wall. Alternatively, the second metal layer can be formed on the dielectric layer as being a metal line simultaneously as formed in the via as being a pad. The metal line and the pad are connected electronically. The aforesaid metal second layer can be formed in the via and on the dielectric layer by a metal lift-off process. | 05-03-2012 |
| 20120135355 | METHOD OF FORMING PATTERNS - A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer. | 05-31-2012 |
| 20120171621 | METHOD FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE - A method for manufacturing an electronic device comprises a step for forming a coating film ( | 07-05-2012 |
| 20120202155 | UNDERLAYER COATING COMPOSITION AND PROCESSES THEREOF - The invention relates to an underlayer coating composition comprising a polymer, where the polymer comprises at least one hydroxyaromatic unit in the backbone of the polymer phenol which has a pendant group comprising a fluoro or iodo moiety, and at least one unit comprising an aminoplast. The invention further relates to a process for forming an image using the composition, especially for EUV. | 08-09-2012 |
| 20120219916 | MICROSTRUCTURE MANUFACTURING METHOD - A microstructure manufacturing method includes forming a layer of a photosensitive resin on a substrate surface having an electrical conductivity, forming a structure of the photosensitive resin by exposing the layer of the photosensitive resin to light and developing the layer of the photosensitive resin to expose a part of the substrate surface, forming a first plated layer on the exposed part of the substrate surface by soaking the structure of the photosensitive resin in a first plating solution, curing the structure of the photosensitive resin after forming the first plated layer, removing at least part of the first plated layer after curing the structure of the photosensitive resin, and forming a second plated layer on a part where the first plated layer is removed, by soaking the structure of the photosensitive resin in a second plating solution different from the first plating solution. | 08-30-2012 |
| 20120251956 | ANTIREFLECTIVE COATING COMPOSITION AND PROCESS THEREOF - The invention relates to an antireflective coating composition comprising a crosslinker and a crosslinkable polymer capable of being crosslinked by the crosslinker, where the crosslinkable polymer comprises a unit represented by structure (1): | 10-04-2012 |
| 20120315582 | PATTERNED SUBSTRATE AND METHOD FOR PRODUCING SAME - Disclosed is a patterned substrate having a conductor pattern. The conductor pattern is obtained by forming a layer (B) containing an organic polysilane on a conductive substrate (A), irradiating a certain region of the layer (B) with a radiation for oxidizing the organic polysilane constituting the layer (B) in the certain region, and then applying a solution containing a conducting polymer, water and/or a hydrophilic solvent over at least the certain region of the layer (B) for forming a layer (C) composed of the conducting polymer while impregnating the layer (B) in the certain region with the conducting polymer for electrically connecting the layer (C) and the substrate (A). | 12-13-2012 |
| 20120328990 | UNDERLAYER COMPOSITION AND PROCESS THEREOF - The present invention relates to an underlayer composition comprising a polymer, an organic titanate compound and optionally a thermal acid generator, where the polymer comprises at least one fluoroalcohol group and at least one epoxy group. The invention also relates to a process for using this underlayer material as an antireflective coating composition and/or a hard mask for pattern transfer. | 12-27-2012 |
| 20130011798 | METHOD OF APPLYING PATTERNED METALLIZATION TO BLOCK FILTER RESONATORS - An embodiment of the present invention provides a method of applying patterned metallization to a ceramic block comprising applying a photodefinable ink to said ceramic block; drying said ink; exposing said photodefinable ink to UV radiation through a predefined mask according to the thickness of the film to form a pattern; developing said pattern in a developer solution thereby forming a patterned ceramic block; and rinsing, drying and firing said patterned ceramic block. | 01-10-2013 |
| 20130017494 | Photoresist Processing Methods - A photoresist processing method includes treating a substrate with a sulfur-containing substance. A positive-tone photoresist is applied on and in contact with the treated substrate. The method includes selectively exposing a portion of the photoresist to actinic energy and developing the photoresist to remove the exposed portion and to form a photoresist pattern on the substrate. The treating with a sulfur-containing substance reduces an amount of residual photoresist intended for removal compared to an amount of residual photoresist that remains without the treating. | 01-17-2013 |
| 20130101941 | METHOD FOR DESIGN AND MANUFACTURE OF PATTERNS WITH VARIABLE SHAPED BEAM LITHOGRAPHY - In the field of semiconductor device production, a method for manufacturing a surface using two-dimensional dosage maps is disclosed. A set of charged particle beam shots for creating an image on the surface is determined by combining dosage information such as dosage maps for a plurality of shots into the dosage map for the surface. A similar method is disclosed for fracturing or mask data preparation of a reticle image. | 04-25-2013 |
| 20130122428 | EXPOSURE SYSTEM, METHOD OF FORMING PATTERN USING THE SAME AND METHOD OF MANUFACTURING DISPLAY SUBSTRATE USING THE SAME - An exposure system includes an exposure apparatus and a phase shift mask. The exposure apparatus emits a multi-wavelength light including a plurality of wavelengths different from each other. The phase shift mask includes a transparent substrate and a light blocking layer. The transparent substrate includes a first surface, and a second surface opposite to the first surface. The multi-wavelength light is incident into the first surface. The transparent substrate further includes a recess which extends from the second surface toward the first surface. The light blocking layer includes a first opening which exposes the second surface of the transparent substrate, and a second opening which is spaced apart from the first opening and exposes the recess of the transparent substrate. | 05-16-2013 |
| 20130143164 | POLYMERIZABLE COMPOSITION - Provided is a polymerizable composition containing (A) a polymerization initiator, (B) a polymerizable compound, (C) at least either a tungsten compound or a metal boride, (D) a compound having a maximum absorption wavelength between 300 nm and 450 nm and assuming that the maximum absorbance between 300 nm and 450 nm is 1, having an absorbance of 0.3 or less at a wavelength of 550 nm, and (E) an alkali-soluble binder. | 06-06-2013 |
| 20130183624 | RADIATION-SENSITIVE RESIN COMPOSITION - A radiation-sensitive resin composition includes a compound represented by a formula (1), and a polymer that serves as a base resin. R | 07-18-2013 |
| 20130189626 | LIQUID CRYSTAL DISPLAY DEVICE TREATED BY UV IRRADIATION - A liquid crystal display device includes a pair of substrates, a liquid crystal between substrates and alignment layers disposed on the inner surface sides of the substrates. The alignment layer is made from a material including polyamic acid containing a diamine component and polyimide containing a diamine component different from the diamine component of the polyamic acid. The alignment layer is subjected to alignment treatment by irradiation of light. UV light can be irradiated in the oblique direction onto the alignment layer through a mask having openings. A reflecting plate can be arranged between a UV light source and the mask. Also, bank structures having a thickness from 0.1 to 0.15 μm can be provided on the alignment layer of the TFT substrate. | 07-25-2013 |
| 20130252173 | METHOD OF MANUFACTURING ELECTROFORMING MOLD, ELECTROFORMING MOLD, AND METHOD OF MANUFACTURING ELECTROFORMED COMPONENT - In a method of manufacturing an electroforming mold, a first photoresist layer is formed on an upper surface of a bottom conductive film of a substrate, and the first photoresist layer is divided into a first soluble portion and a first insoluble portion. A conductive material is thermally deposited on an upper surface of the first photoresist layer within a predetermined temperature range, to thereby form an intermediate conductive film. An intermediate conductive film is patterned. A second photoresist layer is formed on an exposed upper surface of the first photoresist layer after the intermediate conductive film is removed, and on an upper surface of the intermediate conductive film remaining after patterning. The second photoresist layer is divided into a second soluble portion and a second insoluble portion. Next, the first and second photoresist layers are developed, and the first and second soluble portions are removed. | 09-26-2013 |
| 20130280659 | EXHAUST APPARATUS, PROCESSING APPARATUS, AND DEVICE MANUFACTURING METHOD - An exhaust apparatus includes a structural member; a vacuum pump configured to exhaust a gas via the structural member; and a regulator configured to regulate a temperature of the structural member. The structural member has first and second end faces and a columnar through hole connecting the first and second end faces to each other. The apparatus is configured such that the vacuum pump exhausts a gas via the through hole. | 10-24-2013 |
| 20130309611 | Immersion Lithography Watermark Reduction - Provided is a method of performing a lithography process. The method includes: exposing, through an immersion lithography process, a photo-sensitive material on a substrate, the immersion lithography process using a fluid for the exposing; thereafter treating the photo-sensitive material with a solution to neutralize quenchers that have diffused into the photo-sensitive material through the liquid, wherein the solution contains a substance that diffuses into the photo-sensitive material at a first rate that is dependent on a second at which the quenchers diffuse into the photo-sensitive material; thereafter removing a portion of the photo-sensitive material; thereafter performing a post-exposure bake to the photo-sensitive material; and developing the photo-sensitive material. | 11-21-2013 |
| 20130330672 | METHOD FOR ENHANCING LITHOGRAPHIC IMAGING OF ISOLATED AND SEMI-ISOLATED FEATURES - The present invention relates to photolithography methods for enhancing lithographic imaging of isolated and semi-isolated features. A first layer of a first photoresist is formed over a substrate. A second layer of a second photoresist is formed over the first layer. The second photoresist includes a polymer containing an absorbing moiety. The second layer is exposed through a first patterned mask and developed to form a first relief image. The first relief image and the first layer are exposed through a second patterned mask. One of the first and the second patterned masks includes a dense pattern, while the other includes an isolated or a semi-isolated pattern. The first relief image and base soluble regions of the first layer are removed to form a second relief image with an isolated or a semi-isolated pattern. The second layer can also be bleachable upon exposure and bake in the present invention. | 12-12-2013 |
| 20140004467 | METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION | 01-02-2014 |
| 20140004468 | MULTIPLE-GRID EXPOSURE METHOD | 01-02-2014 |
| 20140057209 | METHOD OF FORMING PATTERNS - A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film having a receding contact angle of 70 degrees or above with respect to water, wherein the resist composition for negative development contains a resin capable of increasing the polarity by the action of an acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) exposing the resist film via an immersion medium, and (c) performing development with a negative developer. | 02-27-2014 |
| 20140080065 | METHOD OF LITHOGRAPHY - A lithography method of manufacturing integrated circuits is disclosed. A combination photoalignment-photoresist layer is formed on a substrate. A treatment is performed on the combination photoalignment-photoresist layer. The combination photoalignment-photoresist layer is exposed to a predetermined pattern. The combination photoalignment-photoresist layer is developed to form a pattern and expose a portion of the substrate. | 03-20-2014 |
| 20140127629 | METHOD OF FORMING PATTERN - Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 μm or greater amount to a density of 30 particles/ml or less. | 05-08-2014 |
| 20140186772 | PHOTORESIST PATTERN TRIMMING METHODS - Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices. | 07-03-2014 |
| 20140212816 | PHOTOLITHOGRAPHIC METHODS - Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices. | 07-31-2014 |
| 20140255850 | Photo-Resist with Floating Acid - A method for fabricating a semiconductor product includes applying a photo-resist layer to a substrate, the photo-resist layer including a higher acid concentration at an upper portion of the photo-resist layer than at a lower portion of the photo-resist layer. The method also includes exposing the photo-resist layer to a light source through a mask including a feature, the photo-resist layer including a floating, diffusing acid that will diffuse into a region of the photo-resist layer affected by the feature while not diffusing into a feature formed by the mask. | 09-11-2014 |
| 20140349236 | Method for Forming Semiconductor Structure Having Opening - A method for forming a semiconductor structure having an opening is provided. First, a substrate is provided, wherein a first region and a second region are defined on the substrate and an overlapping area of the first region and the second region is defined as a third region. A pattern density of the first region is substantially greater than that of the second region. Then, a material layer is formed on the substrate. A first hard mask and a second hard mask are formed on the material layer. The first hard mask in the first region is removed to form a patterned first hard mask. The second hard mask in the third region is removed to form a patterned second hard mask. Lastly, the material layer is patterned by using the patterned second hard mask layer as a mask to form at least an opening in the third region only. | 11-27-2014 |
| 20140370444 | ANTIREFLECTIVE COATING COMPOSITION AND PROCESS THEREOF - The present invention relates to an absorbing hard mask antireflective coating composition comprising a novel polymer, where the novel polymer comprises in the backbone of the polymer four repeat units -A-, -B-, -C- and -D-, where A is repeat unit which comprises a fused aromatic ring in its backbone, B has the structure (1), C is a hydroxylbiphenyl of structure (2) and D is a derivatized fluorene of structure (3), | 12-18-2014 |
| 20140370445 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes a photolithography process having steps of a developing solution immersing process. The steps of the developing solution immersing process includes step (a) of dropping a developing solution on a silicon carbide semiconductor substrate and forming a developing solution film so as to have a film thickness of more than 6 μm and step (b) of reducing the film thickness of the developing solution film to 6 μm or less. | 12-18-2014 |
| 20150044616 | METHOD OF FORMING PATTERNS - A method of forming patterns includes (a) coating a substrate with a resist composition for negative development to form a resist film, wherein the resist composition contains a resin capable of increasing the polarity by the action of the acid and becomes more soluble in a positive developer and less soluble in a negative developer upon irradiation with an actinic ray or radiation, (b) forming a protective film on the resist film with a protective film composition after forming the resist film and before exposing the resist film, (c) exposing the resist film via an immersion medium, and (d) performing development with a negative developer. | 02-12-2015 |
| 20150056558 | PHOTOACID GENERATOR AND PHOTORESIST COMPRISING SAME - A photoacid generator compound has the formula (I): | 02-26-2015 |
| 20150079522 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD - A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method. | 03-19-2015 |
| 20150132701 | Photoresist System and Method - A photoresist includes a group which will decompose that is attached to a hydrocarbon backbone at multiple points along the hydrocarbon chain. With such an attachment, the group which will decompose will cleave from one point in order to generate a desired shift in polarity while still remaining bonded to the hydrocarbon backbone. This prevents the group which will decompose from leaving the photoresist, thereby reducing or eliminating volume losses associated with exposure and post-exposure baking. | 05-14-2015 |
| 20150293446 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, RESIST FILM USING THE SAME, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit represented by the following Formula (A) and having at least two of a repeating unit represented by the following Formula (B), a repeating unit represented by the following Formula (C), a repeating unit represented by the following Formula (D) and a repeating unit represented by the following Formula (E). | 10-15-2015 |
| 20150355550 | PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD - A method for producing a semiconductor element includes applying a photoresist composition on a surface of an inorganic substrate to provide a resist film. The photoresist composition includes a polymer comprising an acid-labile group, and an acid generator. The resist film is exposed. The exposed resist film is developed with a developer solution containing an organic solvent to form a negative resist pattern. Ions are implanted into the inorganic substrate using the negative resist pattern as a mask. The photoresist composition preferably further contains a compound including a carboxy group, a sulfo group, a group represented by formula (i), a group capable of generating the carboxy group, the sulfo group or the group represented by the formula (i) by an action of an acid, a lactonic carbonyloxy group or a combination thereof, and having a molecular weight of no greater than 1,000. | 12-10-2015 |
| 20160026083 | PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - The present invention has an object to provide a pattern forming method, in which even when a pattern which is fine and has a high aspect ratio is formed, the collapse or peeling of the pattern is inhibited; a method for manufacturing an electronic device, including the pattern forming method; and an electronic device manufactured by the manufacturing method. The pattern forming method of the present invention includes an adhesion aiding layer forming step of forming an adhesion aiding layer containing a polymerizable group and having a light transmittance of 80% or more at a wavelength of 193 nm on a substrate; a resist film forming step of applying a radiation-sensitive resin composition onto the adhesion aiding layer to form a resist film; an exposing step of exposing the resist film; and a developing step of developing the exposed resist film to form a pattern. | 01-28-2016 |
| 20160026090 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING PHOTOLITHOGRAPHIC RINSE SOLUTION - A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8. | 01-28-2016 |
| 20160041467 | PHOTOLITHOGRAPHIC METHODS - Provided are photoresist overcoat compositions, substrates coated with the overcoat compositions and methods of forming electronic devices by a negative tone development process. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices. | 02-11-2016 |
| 20160054658 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE - Provided is a pattern forming method including a step of applying a solvent (S) onto a substrate, a step of applying an actinic ray-sensitive or radiation-sensitive resin composition onto a substrate, on which the solvent (S) has been applied, to form an actinic ray-sensitive or radiation-sensitive film, a step of exposing the actinic ray-sensitive or radiation-sensitive film, and a step of developing the exposed actinic ray-sensitive or radiation-sensitive film with a developing liquid containing an organic solvent to form a negative-type pattern. | 02-25-2016 |
| 20160097976 | PHOTOSENSITIVE MATERIAL AND METHOD OF LITHOGRAPHY - Photosensitive materials and method of forming a pattern that include providing a composition of a component of a photosensitive material that is operable to float to a top region of a layer formed from the photosensitive material. In an example, a photosensitive layer includes a first component having a fluorine atom (e.g., alkyl fluoride group). After forming the photosensitive layer, the first component floats to a top surface of the photosensitive layer. Thereafter, the photosensitive layer is patterned. | 04-07-2016 |
| 20160103395 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD - A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method. | 04-14-2016 |
| 20160124309 | PATTERN FORMATION METHODS - Methods of forming an electronic device, comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) forming a photoresist layer over the one or more layers to be patterned, wherein the photoresist layer is formed from a composition that comprises: a matrix polymer comprising a unit having an acid labile group; a photoacid generator; and an organic solvent; (c) coating a photoresist overcoat composition over the photoresist layer, wherein the overcoat composition comprises: a matrix polymer; an additive polymer; a basic quencher; and an organic solvent; wherein the additive polymer has a lower surface energy than a surface energy of the matrix polymer, and wherein the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition; (d) exposing the photoresist layer to activating radiation; (e) heating the substrate in a post-exposure bake process; and (f) developing the exposed film with an organic solvent developer. The methods have particular applicability in the semiconductor manufacturing industry. | 05-05-2016 |
| 20160154310 | METHOD FOR EXPOSING PHOTORESIST IN A MICROELECTRIC DEVICE | 06-02-2016 |
| 20160195814 | PATTERN FORMATION METHOD, ELECTRONIC-DEVICE PRODUCTION METHOD, AND PROCESSING AGENT | 07-07-2016 |
| 20160252818 | PRODUCTION METHOD OF SEMICONDUCTOR ELEMENT, AND ION IMPLANTATION METHOD | 09-01-2016 |
