| Entries |
| Document | Title | Date |
|---|
| 20080198514 | Magnetoresistive device, magnetic head, magnetic storage apparatus, and magnetic memory - A CPP-type magnetoresistive device includes a magnetization pinned layer, a magnetization free layer, and a non-magnetic layer provided between the magnetization pinned layer and the magnetization free layer. At least one of the magnetization free layer and the magnetization pinned layer is formed of CoFeGe, and the CoFeGe has a composition falling within a range defined by line segments connecting coordinate points A, B, C, and D in a ternary composition diagram where the point A is (42.5, 30, 27.5), the point B is (35, 52.5, 12.5), the point C is (57.5, 30.0, 12.5), and the point D is (45.0, 27.5, 27.5), and where each of the coordinate points is represented by content percentage of (Co, Fe, Ge) expressed by atomic percent (at. %). | 08-21-2008 |
| 20080204942 | MAGNETIC THIN FILM HAVING SPACER LAYER THAT CONTAINS CuZn - A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between said pinned layer and said free layer. Sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said spacer layer, and said free layer. Said spacer layer has a CuZn metal alloy which includes an oxide region, said oxide region consisting of an oxide of any of Al, Si, Cr, Ti, Hf, Zr, Zn, and Mg. | 08-28-2008 |
| 20080204943 | Magnetoresistive element, magnetic memory, magnetic head, and magnetic recording/reproducing device - A magnetoresistive element includes: a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer provided between the first magnetic layer and the second magnetic layer. At least one of the first magnetic layer and the second magnetic layer has a magnetic compound that is expressed by M | 08-28-2008 |
| 20080204944 | MAGNETIC MEMORY - It is possible to reduce writing current without causing fluctuation of the writing characteristic. A magnetic memory includes: a magnetoresistance effect element having a magnetization pinned layer whose magnetization direction is pinned, a storage layer whose magnetization direction is changeable, and a non-magnetic layer provided between the magnetization pinned layer and the storage layer; and a first wiring layer which is electrically connected to the magnetoresistance effect element and extends in a direction substantially perpendicular to a direction of an easy magnetization axis of the storage layer, an end face of the magnetoresistance effect element substantially perpendicular to the direction of the easy magnetization axis of the storage layer and an end face of the first wiring layer substantially perpendicular to the direction of the easy magnetization axis being positioned on the same plane. | 08-28-2008 |
| 20080212241 | DAMPING CONTROL IN MAGNETIC NANO-ELEMENTS USING ULTRATHIN DAMPING LAYER - A write head and a method for forming the write head. The method includes providing a first pole and a second pole for the write head. The first pole and the second pole are formed from a ferromagnetic material. Regions of the write head including at least a portion of at least one of the first pole and the second pole of the write head are volumetrically doped with a dopant material selected from one of a 4d transition metal, 5d transition metal, and 4f rare earth metal. The dopant material is predetermined to provide a magnetic damping in the doped regions which is greater than the magnetic damping in the ferromagnetic material. | 09-04-2008 |
| 20080239587 | Magneto-resistance effect element, magnetic head, magnetic recording device and magnetic memory - A magneto-resistance effect element includes: a first magnetic layer of which a first magnetization is fixed in one direction; a second magnetic layer of which a second magnetization is fixed in one direction; a spacer layer located between the first magnetic layer and the second magnetic layer and made of at least one selected from the group consisting of an oxide, a nitride, an oxynitride and a metal; and a current bias generating portion, which is located adjacent to the spacer layer, for applying a bias magnetic field to the spacer layer. | 10-02-2008 |
| 20080239588 | Magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device - A magneto-resistance effect element includes a magneto-resistance effect film comprised of a free magnetization layer, a fixed magnetization layer and an intermediate layer disposed between the free magnetization layer and the fixed magnetization layer; a magnetic coupling layer which is disposed on one main surface of the fixed magnetization layer; a ferromagnetic layer which is disposed on one main surface of the magnetic coupling layer; an antiferromagnetic layer which is disposed on one main surface of the ferromagnetic layer; a magnetic domain controlling film for applying a biasing magnetic field to the free magnetization layer; and a pair of electrodes for flowing a current in the magneto-resistance effect film; wherein an asymmetry is set positive and an element resistance RA is set to 1.5 Ωμm | 10-02-2008 |
| 20080259507 | Tunneling Magnetoresistive (TMR) Sensor with A Co-Fe-B Free Layer Having A Negative Saturation Magnetostriction - A tunneling magnetoresistive (TMR) sensor with a free layer made of a Co—Fe—B alloy is disclosed. After annealing at a temperature of less than 300° C., the Co—Fe—B free layer exhibits a negative or zero saturation magnetostriction, λ | 10-23-2008 |
| 20080316655 | Current sensor and method of manufacturing current sensor - Provided is a current sensor capable of detecting an induced magnetic field by a current to be detected with higher precision. The first and second modules are provided on facing surfaces of integrated substrates, respectively, with spacers in between. Each of the first and second modules includes an element substrate, and an MR element layer. On each of the MR elements layers, provided is an MR element having a stacked structure including a pinned layer, a nonmagnetic intermediate layer, and a free layer whose magnetization direction changes according to the induced magnetic field and which exhibits an anisotropic field in a direction different from that of the magnetization of the pinned layer. The stacked structures of the MR elements are provided in a same layer level. | 12-25-2008 |
| 20090002898 | CPP-TMR SENSOR WITH NON-ORTHOGONAL FREE AND REFERENCE LAYER MAGNETIZATION ORIENTATION - A TMR sensor structure having free and reference layers, where the magnetic orientations of the free and reference layers are non-orthogonal. In one embodiment, a ferromagnetic free layer film has a bias-point magnetization nominally oriented in plane of the film thereof, in a first direction at an angle θ | 01-01-2009 |
| 20090015971 | COHERENT SPIN VALVE AND RELATED DEVICES - Embodiments of the present invention are directed toward the field of spintronics, and in particular, systems and devices capable of performing spin coherent quantum logic operations. The inventive spin valve comprises two ferromagnetic electrode layers, and a non-magnetic conducting layer positioned therebetween. An external magnetic field | 01-15-2009 |
| 20090021869 | MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD AND MAGNETIC RECORDING AND/OR REPRODUCING SYSTEM - There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin. | 01-22-2009 |
| 20090040661 | TUNNELING MAGNETIC SENSING ELEMENT AND METHOD FOR MAKING THE SAME - An insulating barrier layer including a lower insulating layer composed of Al—O and an upper insulating layer composed of CoFe—O and disposed on the lower insulating layer is formed on a second pinned magnetic layer. A free magnetic layer is formed on the insulating barrier layer. According to this structure, a high rate of change in resistance (ΔR/R) and a low RA (element resistance R×element area A) can be achieved. | 02-12-2009 |
| 20090080122 | CURRENT PERPENDICULAR TO PLANE GMR AND TMR SENSORS WITH IMPROVED MAGNETIC PROPERTIES USING Ru/Si SEED LAYERS - A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer layer (or barrier layer) to be very thin. The seed layer includes a thin layer of Ru and a thin layer of Si which intermix to form a homogeneous, amorphous thin seed layer of Ru-silicide. | 03-26-2009 |
| 20090097168 | MAGNETIC THIN FILM, AND MAGNETORESISTANCE EFFECT DEVICE AND MAGNETIC DEVICE USING THE SAME - A magnetic thin film being ferromagnetic and exhibiting large spin polarization at room temperature is provided that comprises a substrate ( | 04-16-2009 |
| 20090141408 | MAGNETORESISTANCE EFFECT ELEMENT, MAGNETIC HEAD, MAGNETIC REPRODUCING APPARATUS, AND MAGNETIC MEMORY - A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer whose direction of magnetization changes in response to an external magnetic field; a nonmagnetic intermediate layer located between the first and second magnetic layers; and a film provided in the first magnetic layer, in the second magnetic layer, at a interface between the first magnetic layer and the nonmagnetic intermediate layer, and/or at a interface between the second magnetic layer and the nonmagnetic intermediate layer, the film having a thickness not larger than 3 nanometers, and the film has as least one selected from the group consisting of nitride, oxinitride, phosphide, and fluoride. The pair of electrodes are electrically connected to the magnetoresistance effect film to supply a sense current perpendicularly to a film plane of said magnetoresistance effect film. | 06-04-2009 |
| 20090154032 | MAGNETORESISTIVE SENSOR WITH NITROGENATED HARD BIAS LAYER FOR IMPROVED COERCIVITY - A magnetoresistive sensor having a hard bias structure that provides improved bias field robustness. The sensor includes a nitrogenated hard bias layer and a seed layer that include a nitrogenated NiTa layer and a layer of Ru. The seed layer can also include a layer of CrMn disposed between the layer of NiTa and the layer of Ru. The novel seed structure allows a nitrogenated hard bias layer to be used, while maintaining a high magnetic coercivity of the hard bias layer. | 06-18-2009 |
| 20090161266 | TMR device with surfactant layer on top of cofexby/cofez inner pinned layer - A high performance TMR element is fabricated by inserting an oxygen surfactant layer (OSL) between a pinned layer and AlOx tunnel barrier layer in a bottom spin valve configuration. The pinned layer preferably has a SyAP configuration with an outer pinned layer, a Ru coupling layer, and an inner pinned layer comprised of CoFe | 06-25-2009 |
| 20090168266 | Magneto-resistive effect element, magnetic head, and magnetic recording/reading apparatus - Embodiments of the present invention provide a practical magneto-resistive effect element for CPP-GMR, which exhibits appropriate resistance-area-product and high magnetoresistance change ratio, and meets the demand for a narrow read gap. Certain embodiments of a magneto-resistive effect element in accordance with the present invention include a pinned ferromagnetic layer containing a first ferromagnetic film having a magnetization direction fixed in one direction, a free ferromagnetic layer containing a second ferromagnetic film having a magnetization direction varying in response to an external magnetic field, an intermediate layer provided between the pinned ferromagnetic layer and the free ferromagnetic layer, and a current confinement layer for confining a current. At least one of the pinned ferromagnetic layer or the free ferromagnetic layer includes a highly spin polarized layer. | 07-02-2009 |
| 20090180218 | Information storage devices using magnetic domain wall movement and methods of operating the same - An information storage device includes a magnetic layer configured to store information, a first and second conductive layer. The first conductive layer contacts a first end of the magnetic layer. The second conductive layer contacts a second end of the magnetic layer. The magnetic layer includes first and second pinning regions at which magnetic domain walls are pinned. The widths of the magnetic layer at the first and second pinning regions are different. | 07-16-2009 |
| 20090207533 | CPP-TYPE MAGNETO RESISTANCE ELEMENT HAVING A PAIR OF FREE LAYERS AND SPACER LAYER SANDWICHED THEREBETWEEN - A magnetic field detecting element includes: first and second free layers whose magnetization directions change in accordance with an external magnetic field; a spacer layer that is sandwiched between the first and second free layers; a first exchange coupling transmitting layer that is located adjacent to a surface of first free layer, the surface of first free layer | 08-20-2009 |
| 20090244789 | METHOD AND SYSTEM FOR PROVIDING A HARD BIAS CAPPING LAYER - The method and system for providing a magnetoresistive device are disclosed. The magnetoresistive device is formed from a plurality of magnetoresistive layer. The method and system include providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method and system include depositing hard bias layer(s). The method and system also include providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method and system also include performing a planarization. The planarization stop layer is configured for the planarization. | 10-01-2009 |
| 20090244790 | MAGNETORESISTIVE ELEMENT AND LAYERED OBJECT - An magnetoresistive element includes: an underlayer made of a nitride; a pinning layer made of an antiferromagnetic layer overlaid on the underlayer, the pinning layer having the close-packed surface in the (111) surface of crystal, the pinning layer setting the (002) surface of crystal in parallel with the surface of the underlayer; a reference layer overlaid on the pinning layer, the reference layer having the magnetization fixed in a predetermined direction based on the exchange coupling with the pinning layer; a nonmagnetic layer overlaid on the reference layer, the nonmagnetic layer made of a nonmagnetic material; and a free layer overlaid on the nonmagnetic layer, the free layer made of a ferromagnetic material, the free layer enabling a change in the direction of the magnetization under the influence of an external magnetic field. | 10-01-2009 |
| 20090316308 | SELF-PINNED CPP GIANT MAGNETORESISTIVE HEAD WITH ANTIFERROMAGNETIC FILM ABSENT FROM CURRENT PATH - A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium. | 12-24-2009 |
| 20100033880 | MULTI-BIT STRAM MEMORY CELLS - A multi-bit spin torque magnetic element that has a ferromagnetic pinned layer having a pinned magnetization orientation, a non-magnetic layer, and a ferromagnetic free layer having a magnetization orientation switchable among at least four directions, the at least four directions being defined by a physical shape of the free layer. The magnetic element has at least four distinct resistance states. Magnetic elements with at least eight magnetization directions are also provided. | 02-11-2010 |
| 20100079919 | SPIN-TORQUE OSCILLATOR, A MAGNETIC SENSOR AND A MAGNETIC RECORDING SYSTEM - In a spin-torque oscillator, a first ferromagnetic layer, a non-magnetic layer and a second ferromagnetic layer are stacked. A pair of electrodes perpendicularly applies a current onto each plane of the first ferromagnetic layer, the non-magnetic layer and the second ferromagnetic layer. The current induces a precession of a magnetization of at least one of the first ferromagnetic layer and the second ferromagnetic layer. The at least one is formed by an in-plane magnetization film having a uniaxial magnetic anisotropy. A magnetic field generator generates a magnetic field to control a direction of the magnetization so that a non-linearity frequency shift of the precession by the uniaxial magnetic anisotropy cancels a non-linearity frequency shift of the precession by a demagnetizing field on the in-plane magnetization film. | 04-01-2010 |
| 20100118448 | DIFFERENTIAL HEAD HAVING A BALANCED OUTPUT AND METHOD OF MANUFACTURING THEREOF - In one embodiment, a differential-type magnetic read head includes a differential-type magneto-resistive-effect film formed on a substrate, and a pair of electrodes for applying current in a direction perpendicular to a film plane of the film. The film includes a first and second stacked film, each having a pinned layer, an intermediate layer, and a free layer, with the second stacked film being formed on the first stacked film. A side face in a track width direction of the film is shaped to have an inflection point at an intermediate position in a thickness direction of the film, and the side face is shaped to be approximately vertical to the substrate in an upward direction of the substrate from the inflection point. Also, the side face is shaped to be gradually increased in track width as approaching the substrate in a downward direction of the substrate from the inflection point. | 05-13-2010 |
| 20100328822 | METHOD AND SYSTEM FOR PROVIDING A BARRIER FOR A MAGNETORESISTIVE STRUCTURE UTILIZING HEATING - A method and system for providing a magnetic recording transducer is described. The method and system include providing a pinned layer for a magnetic element. In one aspect, a portion of a tunneling barrier layer for the magnetic element is provided. The magnetic recording transducer annealed is after the portion of the tunneling barrier layer is provided. The annealing is at a temperature higher than room temperature. A remaining portion of the tunneling barrier layer is provided after the annealing. In another aspect, the magnetic transducer is transferred to a high vacuum annealing apparatus before annealing the magnetic transducer. In this aspect, the magnetic transducer may be annealed before any portion of the tunneling barrier is provided or after at least a portion of the tunneling barrier is provided. The annealing is performed in the high vacuum annealing apparatus. A free layer for the magnetic element is also provided. | 12-30-2010 |
| 20120206838 | MAGNETORESISTIVE ELEMENT HAVING A MAGNETIC COMPOUND, MAGNETIC MEMORY, MAGNETIC HEAD, AND A MAGNETIC RECORDING/REPRODUCING DEVICE - An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer layer. At least one of the first magnetic layer and the second magnetic layer includes a magnetic compound layer including a magnetic compound that is expressed by M1 | 08-16-2012 |
| 20130088797 | CPP Device with Improved Current Confining Structure and Process - Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided | 04-11-2013 |
