Class / Patent application number | Description | Number of patent applications / Date published |
360324120 | Detail of free layer or additional film for affecting or biasing the free layer | 49 |
20080204946 | MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC MEMORY DEVICE - A magnetoresistance effect element having a free magnetic layer is provided. The free magnetic layer is formed in a laminate including a fixed magnetization layer having a fixed magnetization direction, a non-magnetic layer formed on the fixed magnetization layer, a first ferromagnetic layer, a non-magnetic metallic layer formed on the first ferromagnetic layer, and a second ferromagnetic layer formed on the non-magnetic metallic layer. The free magnetic layer includes magnetic recording regions, and in each region, the first ferromagnetic layer and the second ferromagnetic layer are coupled such that their magnetization directions are anti-parallel with each other, and one of the magnetic recording regions is opposite to the fixed magnetization layer with the non-magnetic layer therebetween. | 08-28-2008 |
20080239589 | Spin transfer MRAM device with novel magnetic synthetic free layer - We describe a CPP MTJ MRAM element that utilizes transfer of spin angular momentum as a mechanism for changing the magnetic moment direction of a free layer. The device includes a tunneling barrier layer of MgO and a non-magnetic CPP layer of Cu or Cr and utilizes a novel synthetic free layer having three ferromagnetic layers mutually exchange coupled in pairwise configurations. The free layer comprises an inner ferromagnetic and two outer ferromagnetic layers, with the inner layer being ferromagnetically exchange coupled to one outer layer and anti-ferromagnetically exchange coupled to the other outer layer. The ferromagnetic coupling is very strong across an ultra-thin layer of Ta, Hf or Zr of thickness preferably less than 0.4 nm. | 10-02-2008 |
20080239590 | Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element - A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermediate layer which contains insulating portions and magnetic metallic portions and which is provided between the first magnetic layer and the second magnetic layer; and a pair of electrodes to flow current in a direction perpendicular to a film surface of a multilayered film made of the first magnetic layer, the intermediate layer and the second magnetic layer; wherein the magnetic metallic portions of the intermediate layer contain non-ferromagnetic metal. | 10-02-2008 |
20080239591 | Magneto-resistance effect element, and method for manufacturing the same - A magneto-resistance effect element, including: | 10-02-2008 |
20080278864 | Novel CPP device with an enhanced dR/R ratio - A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M) | 11-13-2008 |
20080278865 | MAGNETRORESISTIVE ELEMENT, METHOD OF MANUFACTURING THE SAME, AND MAGNETIC MULTILAYERED FILM MANUFACTURING APPARATUS - A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer containing a ferromagnetic material and a platinum group metal, a second magnetization fixed layer formed from a layer containing a ferromagnetic material, and a first nonmagnetic intermediate layer located between the first magnetization fixed layer and the second magnetization fixed layer, a magnetic free layer formed from a layer containing a ferromagnetic material, and a second nonmagnetic intermediate layer located between the layered magnetization fixed layer and the magnetic free layer. | 11-13-2008 |
20080278866 | MAGNETIC SENSING ELEMENT - At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed close to a free magnetic layer. A film thickness ratio of the first hard bias layer in a whole hard bias layer is from 35% to 75%. This stabilizes magnetization in the free magnetic layer to reduce asymmetry, thus enabling improvement in stability of reproducing characteristics including noise suppression. | 11-13-2008 |
20080278867 | MAGNETORESISTANCE DEVICE WITH A DIFFUSION BARRIER BETWEEN A CONDUCTOR AND A MAGNETORESISTANCE ELEMENT AND METHOD OF FABRICATING THE SAME - A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between said magnetoresistance element to another element, and a diffusion barrier structure disposed between said conductor and said magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between said free and fixed ferroelectric layer. | 11-13-2008 |
20090002899 | MAGNETORESISTIVE ELEMENT, MAGNETORESISTIVE HEAD, AND MAGNETIC DISK APPARATUS - According to one embodiment, a magnetoresistive element includes a magnetization fixed layer, an intermediate layer provided on the magnetization fixed layer, a free layer provided on the intermediate layer, a separating layer composed of nonmagnetic metal and provided on the free layer, and a fluctuation compensated layer whose static magnetic coupling with the free layer is disconnected by the separating layer, whose magnetization direction is fixed so as to be antiparallel to the magnetization direction of the magnetization fixed layer, and provided on the separating layer. | 01-01-2009 |
20090027813 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH CoFeGe FERROMAGNETIC LAYERS - A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has a ferromagnetic alloy comprising Co, Fe and Ge in the sensor's free layer and/or pinned layer. The sensor may be a simple pinned structure, in which case the pinned layer may be formed of the CoFeGe ferromagnetic alloy. Alternatively, the sensor may have an AP-pinned layer structure, in which case the AP2 layer may be formed of the CoFeGe ferromagnetic alloy. The Ge-containing alloy comprises Co, Fe and Ge, wherein Ge is present in the alloy in an amount between about 20 and 40 atomic percent, and wherein the ratio of Co to Fe in the alloy is between about 0.8 and 1.2. More particularly, the CoFeGe alloy may consist essentially of only Co, Fe and Ge according to the formula (Co | 01-29-2009 |
20090034135 | Differential magnetoresistive magnetic head - Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect. | 02-05-2009 |
20090040662 | Magnetoresistive element having spacer layer that includes two layered regions composed of oxide semiconductor and nonmagnetic conductor phase sandwiched therebetween - An MR element includes a free layer having a direction of magnetization that changes in response to an external magnetic field, a pinned layer having a fixed direction of magnetization, and a spacer layer disposed between these layers. The spacer layer includes a first region, a second region and a third region that are each in the form of a layer and that are arranged in a direction intersecting the plane of each of the foregoing layers. The second region is sandwiched between the first region and the third region. The first region and the third region are each composed of an oxide semiconductor, and the second region includes at least a nonmagnetic conductor phase out of the nonmagnetic conductor phase and an oxide semiconductor phase. | 02-12-2009 |
20090040663 | MAGNETIC MEMORY - A magnetic memory includes a stack, a first writing wire, and a second writing wire. The stack includes a magnetic pinned layer, a tunnel barrier insulating layer, and a magnetic free layer, so as to form a magnetic tunnel junction (MTJ). The MTJ has an easy axis. The first writing wire is disposed under the stack. The included angle between the first writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on a projected plane. The second writing wire is disposed above the stack. The included angle between the second writing wire and the easy axis of the MTJ is smaller than 45 degrees and greater than 0 degrees on the projected plane. | 02-12-2009 |
20090046398 | METHOD OF BIASING A MAGNETO RESISTIVE SENSOR ELEMENT - A method of biasing a magneto resistive sensor element includes providing at least one magneto resistive sensor element having a magnetic sensitivity along a first axis that is parallel to a plane of the at least one sensor element. A magnet is positioned adjacent to the at least one sensor element for biasing the at least one sensor element, wherein the magnet has a magnetization that is non-perpendicular to the plane of the at least one sensor element, and wherein the magnetization includes a component parallel to the plane of the at least one sensor element that increases a sensitive range of the at least one sensor element along the first axis. | 02-19-2009 |
20090080124 | MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY INCLUDING THE SAME - A magnetoresistive element includes: a first magnetization reference layer having magnetization perpendicular to a film plane, a direction of the magnetization being invariable in one direction; a magnetization free layer having magnetization perpendicular to the film plane, a direction of the magnetization being variable; a first intermediate layer provided between the first magnetization reference layer and the magnetization free layer; a magnetic phase transition layer provided on an opposite side of the magnetization free layer from the first intermediate layer, the magnetic phase transition layer being magnetically coupled to the magnetization free layer, and being capable of bidirectionally performing a magnetic phase transition between an antiferromagnetic material and a ferromagnetic material; and an excitation layer provided on an opposite side of the magnetic phase transition layer from the magnetization free layer, and causing the magnetic phase transition layer to perform the magnetic phase transition from the antiferromagnetic material to the ferromagnetic material. | 03-26-2009 |
20090080125 | MAGNETIC HEAD - A magnetic head is configured to include a free layer having a magnetization direction which is rotatable depending on an external field, a reference layer arranged parallel to the free layer and magnetically isolated from the free layer, and a pinned layer arranged parallel to the reference layer. The pinned layer and the reference layer are antiferromagnetically coupled. The pinned layer has a magnetization direction which is pinned in a predetermined direction, and a magnetization direction of the reference layer is antiparallel with respect to that of the pinned layer. The pinned layer is configured to have an area larger than that of the reference layer. | 03-26-2009 |
20090091865 | CPP device with uniformity improvements - A novel CCP scheme is disclosed for a CPP-GMR sensor in which an amorphous metal/alloy layer such as Hf is inserted between a lower Cu spacer and an oxidizable layer such as Al, Mg, or AlCu prior to performing a pre-ion treatment (PIT) and ion assisted oxidation (IAO) to transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more. An amorphous Hf layer may be used without an oxidizable layer, or a thin Cu layer may be inserted in the CCP scheme to form a Hf/PIT/IAO or Hf/Cu/Al/PIT/IAO configuration. A double PIT/IAO process may be used as in Hf/PIT/IAO/Al/PIT/IAO or Hf/PIT/IAO/Hf/PIT/IAO schemes. | 04-09-2009 |
20090097170 | FERROMAGNETIC TUNNEL JUNCTION ELEMENT, MAGNETIC RECORDING DEVICE AND MAGNETIC MEMORY DEVICE - A ferromagnetic tunnel junction element is a magnetoresistance effect element wherein an electric resistance varies in accordance with a magnetic field applied. The ferromagnetic tunnel junction element includes a pinned layer wherein at least a part of a magnetization direction is held, and an insulation layer formed on the pinned layer, creating an energy barrier that electrons can flow through by a tunnel effect. A first free layer made of a first ferromagnetic material containing boron atoms, is formed on the insulation layer. In the first free layer, a direction of the magnetization switches under an influence of an external magnetic field. A second free layer made of a first ferromagnetic material containing boron atoms, is formed on the first free layer. The direction of magnetization of the second free layer switches under the influence of the external magnetic field, exchanging and coupling with the first free layer. | 04-16-2009 |
20090103215 | MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS - MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo). | 04-23-2009 |
20090109580 | MAGNETIC FIELD DETECTING ELEMENT INCLUDING TRI-LAYER STACK WITH STEPPED PORTION - A magnetic field detecting element comprises; a stack including an upper magnetic layer and a lower magnetic layer, and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization of said upper magnetic layer and said lower magnetic layer changes in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which is provided to sandwich said stack therebetween in a direction of the stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking, and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack opposite to an air bearing surface, and wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and said lower magnetic layer in a direction perpendicular to the air bearing surface; and insulating layers which are provided on both sides of said stack in a track width direction thereof, wherein a stepped portion is formed so that a length of said upper magnetic layer in the track width direction is different from that of said lower magnetic layer. | 04-30-2009 |
20090109581 | MAGNETORESISTANCE EFFECT ELEMENT - There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic layer provided between the ferromagnetic layers, and a layer containing an oxide or nitride as a principal component, wherein the layer containing the oxide or nitride as the principal component contains a magnetic transition metal element which does not bond to oxygen and nitrogen and which is at least one of Co, Fe and Ni. | 04-30-2009 |
20090161269 | MAGNETORESISTIVE SENSOR HAVING AN ENHANCED FREE LAYER STABILIZATION MECHANISM - A magnetoresistive sensor having an improved hard bias stabilization structure. The sensor includes a hard bias layer that is formed on a surface that has been treated to form it with an anisotropic texture that induces a magnetic anisotropy oriented parallel with the air bearing surface. This magnetic anisotropy is further aided by a shape induced magnetic anisotropy caused by configuring the hard bias layers to have a width parallel with the air bearing surface that is larger than a stripe height of the hard bias layer measured perpendicular to the air bearing surface. | 06-25-2009 |
20090168271 | DUAL-LAYER FREE LAYER IN A TUNNELING MAGNETORESISTANCE (TMR) ELEMENT HAVING DIFFERENT MAGNETIC THICKNESSES - Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer structure comprised of dual-layers. The free layer structure includes a first free layer and a second amorphous free layer. The magnetic thicknesses of the first free layer and the second amorphous free layer of the dual layer structure differ to provide improved TMR performance. In one example, the first free layer may have a magnetic thickness that is less than 40% of the total magnetic thickness of the free layer structure. | 07-02-2009 |
20090195941 | Patterned MR device with controlled shape anisotropy - A magnetic sensor with increased sensitivity, lower noise, and improved frequency response is described. The sensor's free layer is ribbon shaped and is closely flanked at each long edge by a ribbon of magnetically soft, high permeability material. This side pattern absorbs external field flux, concentrating it to flow into the sensor's edges to promote larger MR sensor magnetization rotation. | 08-06-2009 |
20090231762 | MAGNETORESISTIVE EFFECT ELEMENT AND THIN-FILM MAGNETIC HEAD WITH THE MAGNETORESISTIVE EFFECT ELEMENT - An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, and a magnetization direction of the pinned layer is substantially parallel to a film surface thereof. | 09-17-2009 |
20090257153 | Binary output reader structure (BORS) with high utilization rate - We disclose a magnetic read head, and method for making it, that operates in a binary rather than an analog mode. This greatly boosts signal amplitude for high area density recording as device dimensions get smaller. The device is well suited to the inclusion of side shields which further reduces side reading errors. The device has a utilization efficiency close to 100% | 10-15-2009 |
20090257154 | SCISSORING-TYPE CURRENT-PERPENDICULAR-TO-THE-PLANE GIANT MAGNETORESISTANCE (CPP-GMR) SENSORS WITH DAMPED FREE LAYER STRUCTURES - A “scissoring-type” current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor has magnetically damped free layers. In one embodiment each of the two free layers is in contact with a damping layer that comprises Pt or Pd, or a lanthanoid (an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Th, Yb, and Lu). Each of the two free layers has one of its surfaces in contact with the sensor's electrically conducting nonmagnetic spacer layer and its other surface in contact with its associated damping layer. A nonmagnetic film may be located between each free layer and its associated damping layer. In another embodiment the damping element is present as a dopant or impurity in each of the two free layers. In another embodiment a nanolayer of the damping element is located within each of the two free layers. | 10-15-2009 |
20090268352 | ST-RAM MAGNETIC ELEMENT CONFIGURATIONS TO REDUCE SWITCHING CURRENT - In order to increase an efficiency of spin transfer and thereby reduce the required switching current, a current perpendicular to plane (CPP) magnetic element for a memory device includes either one or both of a free magnetic layer, which has an electronically reflective surface, and a permanent magnet layer, which has perpendicular anisotropy to bias the free magnetic layer. | 10-29-2009 |
20090268353 | CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE SENSOR WITH ANTIPARALLEL-FREE LAYER STRUCTURE AND LOW CURRENT-INDUCED NOISE - A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL | 10-29-2009 |
20090290268 | NONVOLATILE PROGRAMMABLE LOGIC GATES AND ADDERS - Spin torque magnetic logic device having at least one input element and an output element. Current is applied through the input element(s), and the resulting resistance or voltage across the output element is measured. The input element(s) include a free layer and the output element includes a free layer that is electrically connected to the free layer of the input element. The free layers of the input element and the output element may be electrically connected via magnetostatic coupling, or may be physically coupled. In some embodiments, the output element may have more than one free layer. | 11-26-2009 |
20090323230 | MAGNETIC SENSOR - A magnetic sensor comprises a support; a nonmagnetic conductive layer disposed on the support; a fixed magnetization layer disposed on a first part of the nonmagnetic conductive layer and on the support; a free magnetization layer disposed on a second part of the nonmagnetic conductive layer different from the first part and on the support; and a nonmagnetic low resistance layer, disposed on a part overlapping the nonmagnetic conductive layer in at least one of the fixed magnetization layer and free magnetization layer, having an electrical resistivity lower than that of the one layer. | 12-31-2009 |
20100046121 | CPP MAGNETORESISTIVE HEAD - According to one embodiment, a CPP magnetoresistive head includes a magnetoresistive film comprising a free layer above a non-magnetic intermediate layer and a fixed layer below the non-magnetic intermediate layer, wherein the magnetoresistive film is between a lower magnetic shield layer and an upper magnetic shield layer. The CPP magnetoresistive head also includes a domain control film on each side of the magnetoresistive film, wherein a sense current flows through the magnetoresistive film between the upper magnetic shield layer and the lower magnetic shield layer. The CPP magnetoresistive head also includes a high heat conductivity layer, and a heat dissipation layer having a high heat conductivity and a low linear expansion coefficient, the heat dissipation layer being disposed at the back in a device height direction of the magnetoresistive film and on each side of the domain control film. | 02-25-2010 |
20100053824 | MAGNETORESISTIVE ELEMENT - A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction. | 03-04-2010 |
20100061023 | MAGNETIC HEAD DEVICE AND MAGNETIC DISK DRIVE APPARATUS WITH THE MAGNETIC HEAD DEVICE - A magnetic head device includes a magnetic head section having a first free layer with a magnetization orientation that is not previously defined but changes depending upon only external magnetic field applied, a second free layer with a magnetization orientation that is not previously defined but changes depending upon only external magnetic field applied, a nonmagnetic intermediate layer sandwiched between the first free layer and the second free layer, a first electrode layer stacked on a surface of the first free layer opposite to the nonmagnetic intermediate layer, and a second electrode layer stacked on a surface of the second free layer opposite to the nonmagnetic intermediate layer; a sense-current supply means for flowing a sense current across the first electrode layer and the second electrode layer of the magnetic head section; and a frequency divider circuit for dividing by two a frequency of an output signal produced across the first electrode layer and the second electrode layer of the magnetic head section. | 03-11-2010 |
20100073828 | TMR device with novel free layer - A TMR sensor with a free layer having a FL1/FL2/FL3 configuration is disclosed in which FL1 is FeCo or a FeCo alloy with a thickness between 2 and 15 Angstroms. The FL2 layer is made of CoFeB or a CoFeB alloy having a thickness from 2 to 10 Angstroms. The FL3 layer is from 10 to 100 Angstroms thick and has a negative λ to offset the positive λ from FL1 and FL2 layers and is comprised of CoB or a CoBQ alloy where Q is one of Ni, Mn, Tb, W, Hf, Zr, Nb, and Si. Alternatively, the FL3 layer may be a composite such as CoB/CoFe, (CoB/CoFe) | 03-25-2010 |
20100085666 | Low noise magneto-resistive sensor utilizing magnetic noise cancellation - A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be roughly orthogonal to one another causes them to be magnetostatically coupled in a weak antiferromagnetic mode. This enables the low frequency noise spectra of the two free layers to cancel one another. Careful control of the SH/TW ratio is an important feature of the device | 04-08-2010 |
20100177449 | TMR device with novel free layer stucture - A composite free layer having a FL1/insertion/FL2 configuration is disclosed for achieving high dR/R, low RA, and low λ in TMR or GMR sensors. Ferromagnetic FL1 and FL2 layers have (+) λ and (−) λ values, respectively. FL1 may be CoFe, CoFeB, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, or Nb. FL2 may be CoFe, NiFe, or alloys thereof with Ni, Ta, Mn, Ti, W, Zr, Hf, Tb, Nb, or B. The thin insertion layer includes at least one magnetic element such as Co, Fe, and Ni, and at least one non-magnetic element selected from Ta, Ti, W, Zr, Hf, Nb, Mo, V, Cr, or B. In a TMR stack with a MgO tunnel barrier, dR/R>60%, λ˜1×10 | 07-15-2010 |
20100182723 | Magnetic detector including magnetoresistive element and impact sensor - A magnetic detector includes a magnetoresistive element and an impact sensor. The magnetoresistive element has a plurality of element-constituent layers that are stacked and include a free layer having a magnetization direction that changes in response to a magnetic field to be detected by the magnetic detector. The impact sensor has a plurality of sensor-constituent layers that are made of materials the same as those of the element-constituent layers and stacked in the same order as the element-constituent layers. The plurality of sensor-constituent layers include an impact detecting layer corresponding to the free layer and having a magnetization direction that changes by an inverse magnetostrictive effect in response to distortion created in the impact detecting layer by an impact received by the magnetic detector. The impact detecting layer exhibits a greater amount of change in magnetization direction when the magnetic detector receives an impact, compared with the free layer. | 07-22-2010 |
20100195253 | MAGNETORESISTIVE (MR) ELEMENTS HAVING IMPROVED HARD BIAS SEED LAYERS - MR devices and associated methods of fabrication are disclosed. An MR device includes an MR element and a bias structure on either side of the MR element for biasing a free layer of the MR element. The bias structure includes an amorphous buffer layer, a first seed layer formed from Cr, a second seed layer formed from a non-magnetic Cr alloy, and a hard bias magnetic layer. The second seed layer formed from the non-magnetic Cr alloy is formed between the Cr seed layer and the hard bias magnetic layer. An example of a non-magnetic Cr alloy is Chromium-Molybdenum (CrMo). | 08-05-2010 |
20100214700 | Thin film magnetic head provided with dual synthetic free layers - A thin film magnetic head includes a first through fourth free layers, a spacer layer, and a bias magnetic field application layer. The first and second free layers are magnetized in opposite directions of each other in the orthogonal direction to the ABS when the bias magnetic field is applied to the first and second free layers, and are exchange-coupled such that an angle between the magnetization direction of the bias magnetic field and the first free layer is acute and such that an angle between the magnetization direction of the bias magnetic field and the second free layer is acute. Similarly, the third and fourth layers have the same configuration. | 08-26-2010 |
20100214701 | Magnetoresistive effect element in cpp-type structure and magnetic disk device - An MR element according to the present invention has the superior effects that further improve an MR ratio because a structure of a spacer layer | 08-26-2010 |
20100226048 | MAGNETO-RESISTANCE EFFECT ELEMENT, MAGNETO-RESISTANCE EFFECT HEAD, MAGNETIC STORAGE AND MAGNETIC MEMORY - A magneto-resistance effect element, a magneto-resistance effect head, a magnetic storage and a magnetic memory, in which noise caused by a spin-transfer torque is reduced, are provided. In a fixed magnetization layer or a free magnetization layer of a magneto-resistance effect element including the fixed magnetization layer, a spacer layer and the free magnetization layer; a layer containing one element selected from the group consisting of Ti, Zr, Nb, Mo, Ru, Rh, Pd, Ag, La, Hf, Ta, W, Re, Os, Ir, Pt and Au is disposed. | 09-09-2010 |
20100232075 | DETECTION OF MAGNETIC BEADS USING A MAGNETORESISTIVE DEVICE TOGETHER WITH FERROMAGNETIC RESONANCE - A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance of the latter is then detected by a magneto-resistive type of sensor. This approach offers several advantages over prior art methods in which the magnetic moment of the bead is detected directly. | 09-16-2010 |
20100328823 | MAGNETORESISTIVE READER WITH DEMAGNETIZATION FLUX GUIDE - A magnetic reader comprises first and second shields oriented transversely to a media-facing surface, a magnetoresistive stack located between the first and second shields, and a flux guide. The magnetoresistive stack extends from a proximal end oriented toward the media-facing surface to a distal end oriented away from the media-facing surface. The flux guide extends from the first shield toward the second shield, and is spaced from the magnetoresistive stack at the distal end. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield. | 12-30-2010 |
20110007431 | SPIN TORQUE OSCILLATOR SENSOR ENHANCED BY MAGNETIC ANISOTROPY - A spin torque oscillator device having a magnetic free layer with a magnetic anisotropy that has a component that is oriented perpendicular to a direction of an applied magnetic field. The spin torque oscillator device includes a magnetic reference layer, a magnetic free layer and a non-magnetic layer sandwiched there-between. A component of the magnetic anisotropy of the free layer can be oriented perpendicular to a magnetization of the reference layer, and this orientation relative to the magnetization of the reference layer can be either in lieu of or in addition to its orientation relative to the applied magnetic field. The magnetic anisotropy cants the magnetization of the free layer which would otherwise be oriented antiparallel with the magnetization of the reference layer. The magnetic anisotropy in the free layer improves performance of the spin torque sensor by reducing noise. | 01-13-2011 |
20110026169 | DUAL CPP GMR HEAD USING A SCISSOR SENSOR - A dual current-perpendicular-to-plane scissor sensor according to one embodiment includes a middle free layer; two outer free layers positioned on opposite sides of the middle free layer; spacer layers between the middle free layer and each of the outer free layers; and a hard bias layer positioned behind the free layers relative to a media-facing surface of the sensor, wherein the free layers are about magnetostatically balanced. | 02-03-2011 |
20110032644 | METHOD AND SYSTEM FOR PROVIDING MAGNETIC TUNNELING JUNCTION ELEMENTS HAVING IMPROVED PERFORMANCE THROUGH CAPPING LAYER INDUCED PERPENDICULAR ANISOTROPY AND MEMORIES USING SUCH MAGNETIC ELEMENTS - A method and system for providing a magnetic element and a magnetic memory utilizing the magnetic element are described. The magnetic element is used in a magnetic device that includes a contact electrically coupled to the magnetic element. The method and system include providing pinned, nonmagnetic spacer, and free layers. The free layer has an out-of-plane demagnetization energy and a perpendicular magnetic anisotropy corresponding to a perpendicular anisotropy energy that is less than the out-of-plane demagnetization energy. The nonmagnetic spacer layer is between the pinned and free layers. The method and system also include providing a perpendicular capping layer adjoining the free layer and the contact. The perpendicular capping layer induces at least part of the perpendicular magnetic anisotropy in the free layer. The magnetic element is configured to allow the free layer to be switched between magnetic states when a write current is passed through the magnetic element. | 02-10-2011 |
20120147504 | High resolution magnetic read head - A CPP MR read head and its method of fabrication includes a patterned CPP MR sensor stack having a SAF free layer structure that is longitudinally biased by the combination of an exchange biasing layer formed over the sensor stack and hard biasing layers that are formed adjacent to the patterned sides of the stack. The combination provides the stack with high resolution reading capabilities without the necessity for a narrow read gap formed by closely spaced top and bottom shields. Sixteen embodiments are described that provide different versions of the exchange biasing layer, different positions of the hard biasing layers and different patternings of the CPP MR sensor stack. | 06-14-2012 |
20130128391 | MAGNETO-RESISTANCE EFFECT ELEMENT, AND METHOD FOR MANUFACTURING THE SAME - A magneto-resistance effect element, including:
| 05-23-2013 |