| Entries |
| Document | Title | Date |
|---|
| 20080198513 | MAGNETIC THIN FILM HAVING NON-MAGNETIC SPACER LAYER THAT IS PROVIDED WITH SnO2 LAYER - A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is sandwiched between said pinned layer and said free layer, wherein sense current is configured to flow in a direction that is perpendicular to film surfaces of said pinned layer, said non-magnetic spacer layer, and said free layer. Said non-magnetic spacer layer has a first layer which includes SnO | 08-21-2008 |
| 20080218912 | CPP-type magnetoresistive element having spacer layer that includes semiconductor layer - An MR element includes: a free layer whose direction of magnetization changes in response to a signal magnetic field; a pinned layer whose direction of magnetization is fixed; and a spacer layer disposed between these layers. The spacer layer includes: a semiconductor layer made of an n-type semiconductor; and a Schottky barrier forming layer made of a metal material having a work function higher than that of the n-type semiconductor that the semiconductor layer is made of, the Schottky barrier forming layer being disposed in at least one of a position between the semiconductor layer and the free layer and a position between the semiconductor layer and the pinned layer, touching the semiconductor layer and forming a Schottky barrier at an interface between the semiconductor layer and itself The semiconductor layer is 1.1 to 1.7 nm in thickness, and the Schottky barrier forming layer is 0.1 to 0.3 nm in thickness. | 09-11-2008 |
| 20080253037 | Thin-Film Magnetic Head and Manufacturing Method Thereof - A thin-film magnetic head includes a lower magnetic shield layer, an MR multi-layered structure formed on the lower magnetic shield layer so that current flows in a direction perpendicular to surfaces of laminated layers, an insulation layer formed to surround the MR multi-layered structure, an additional metal layer laminated on at least the MR multi-layered structure, an upper electrode layer made of a soft magnetic material laminated on the additional metal layer and the insulation layer, and an upper magnetic shield layer laminated on the upper electrode layer. The additional metal layer has a multi-layered structure including a nonmagnetic metal layer and a soft magnetic layer laminated on the nonmagnetic metal layer, and has a length along a track-width direction of the MR multi-layered structure larger than a width of a magnetization-free layer in the MR effect multi-layered structure. | 10-16-2008 |
| 20080316654 | MAGNETIC SENSOR AND MANUFACTURING METHOD THEREFOR - A magnetic sensor for detecting magnetism in two-axial directions or three-axial directions is constituted of a substrate, a silicon oxide film that is formed on the substrate so as to form the planar surface and slopes, a plurality of magnetoresistive elements, each of which is formed by laminating a free layer, a conductive layer, and a pin layer on the substrate, a plurality of lead films that are formed to connect the magnetoresistive elements in series, a CVD oxide film for covering the magnetoresistive elements, and a non-magnetic film that is formed between the magnetoresistive elements and the CVD oxide film so as to cover the periphery of the free layer with respect to each magnetoresistive element. Thus, it is possible for the magnetic sensor to include the magnetoresistive elements having superior hysteresis characteristics. | 12-25-2008 |
| 20090002897 | CPP-GMR DEVICE AND MAGNETIC DISK SYSTEM - The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a multilayer device assembly comprising a fixed magnetization layer, a spacer layer, a free layer and a cap layer stacked one upon another in order, with a sense current applied in a stacking direction of the multilayer device assembly. In the rear of the multilayer device assembly, there is a refilled insulation layer formed, which is in contact with the rear end face of the multilayer device assembly and extends rearward, wherein the uppermost position P of the refilled insulation layer that is in contact with the rear end face of said multilayer device assembly lies at a rear end face of the cap layer and is set in such a way as to satisfy a relation: 0.2≦(T | 01-01-2009 |
| 20090009914 | Semiconductor Device Using Locating and Sign of the Spin of Electrons - A spin-valve structure is provided, illustrating the layer structure used for the magnetic tunnel junction, by a method comprising the steps of providing a substrate, growing a ferromagnetic layer on the substrate, growing a tunnel barrier layer on the ferromagnetic layer, providing a first non-magnetic metallic contact on the ferromagnetic layer and providing a second non-magnetic metallic contact for the single ferromagnetic layer. Beside such a single sided structure a double-sided structure can be provided having e.g. a Ga0.94Mn0.06As/undoped GaAs/Ga0.94Mn0.06As trilayer structure on top of a semi-insulating GaAs substrate and an undoped LT-GaAs buffer layer. There is an inner square contact and a surrounding electrical back contact. This sample structure makes it possible to perform two-probe magnetoresistance measurements through both ferromagnets and the GaAs tunnel barrier. The resistance of the device is fully dominated by the vertical tunneling process through the tunnel barrier. | 01-08-2009 |
| 20090034132 | MAGNETIC FIELD DETECTING ELEMENT HAVING STACK WITH A PLURALITY OF FREE LAYERS AND SIDE SHIELD LAYERS - A magnetic field detecting element comprising: a stack including an upper magnetic layer, a lower magnetic layer and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization directions of said upper magnetic layer and said lower magnetic layer change in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which are provided in a manner that they sandwich said stack therebetween in a direction of stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack, the surface being opposite to an air bearing surface of said stack, wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and to said lower magnetic layer in a direction perpendicular to the air bearing surface; and a pair of side shield layers which are provided on both sides of said stack with regard to a track width direction. | 02-05-2009 |
| 20090034133 | MAGNETIC FIELD DETECTING ELEMENT HAVING THIN STACK WITH A PLURALITY OF FREE LAYERS AND THICK BIAS MAGNETIC LAYER - A magnetic field detecting element comprising: a stack including an upper magnetic layer, a lower magnetic layer and a non-magnetic intermediate layer sandwiched between said upper magnetic layer and said lower magnetic layer, wherein magnetization directions of said upper magnetic layer and said lower magnetic layer change in accordance with an external magnetic field; an upper shield electrode layer and a lower shield electrode layer which are provided in a manner that they sandwich said stack therebetween in a direction of stacking of said stack, wherein said upper shield electrode layer and said lower shield electrode layer supply sense current in the direction of stacking and magnetically shield said stack; a bias magnetic layer which is provided on a surface of said stack, the surface being opposite to an air bearing surface of said stack, wherein said bias magnetic layer applies a bias magnetic field to said upper magnetic layer and to said lower magnetic layer in a direction perpendicular to the air bearing surface; and insulating films which are provided on both sides of said stack with regard to a track width direction thereof. The bias magnetic layer has a larger thickness than said stack, and said upper shield electrode layer and/or said lower shield electrode layer includes an auxiliary shield layer which fills a stepped portion, the stepped portion being formed by said stack and said bias magnetic layer. | 02-05-2009 |
| 20090046396 | Magnetic Recording Medium, Linear Magnetic Recording and Reproduction System and Magnetic Recording and Reproduction Method - The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nomnagnetic support. A product, Mrδ, of a residual magnetization Mr of the magnetic layer and a thickness δ of the magnetic layer is equal to or greater than 2 mT•μm and equal to or less than 12 mT•μm, a squareness in a perpendicular direction is equal to or greater than 0.4 and equal to or less than 0.7, and a squareness in a longitudinal direction is equal to or greater than 0.3 but less than 0.6. | 02-19-2009 |
| 20090052095 | Magnetic recording head and magnetic recording apparatus - A magnetic recording head includes: | 02-26-2009 |
| 20090059441 | CPP device with improved current confining structure and process - Plasma nitridation, in place of plasma oxidation, is used for the formation of a CCP layer. Al, Mg, Hf, etc. all form insulating nitrides under these conditions. Maintaining the structure at a temperature of at least 150° C. during plasma nitridation and/or performing post annealing at a temperature of 220° C. or higher, ensures that no copper nitride can form. Additionally, unintended oxidation by molecular oxygen of the exposed magnetic layers (mainly the pinned and free layers) is also avoided | 03-05-2009 |
| 20090059442 | CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT HAVING CHARACTERISTIC FREE LAYERS - A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer which is sandwiched between the first magnetic layer and the second magnetic layer, the first non-magnetic intermediate layer producing a magnetoresistance effect between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer which is sandwiched between the second magnetic layer and the third magnetic layer, the second non-magnetic intermediate layer allowing the second magnetic layer and the third magnetic layer to be exchange-coupled such that magnetization directions thereof are anti-parallel to each other under no magnetic field, the stack being adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack, the bias magnetic layer applying a bias magnetic field to the stack in a direction that is perpendicular to the air bearing surface. | 03-05-2009 |
| 20090086383 | CPP type magneto-resistive effect device and magnetic disk system - The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back. | 04-02-2009 |
| 20090097167 | MAGNETIC SENSOR, MAGNETIC FIELD SENSING METHOD, SEMAGNETIC RECORDING HEAD, AND MAGNETIC MEMORY DEVICE - A magnetic sensor includes a magnetoresistance element having a peak of a thermal fluctuation strength of magnetization under a magnetic field having a certain frequency, a frequency filter connected to the magnetoresistance element and having its transmittance decreased or increased in substantially the frequency of the magnetic field to output a signal corresponding substantially to the peak of the thermal fluctuation strength of magnetization, and a detector connected to the frequency filter to detect the magnetic field based on the signal of the frequency filter. | 04-16-2009 |
| 20090128965 | CPP MAGNETO-RESISTIVE ELEMENT PROVIDED WITH A PAIR OF MAGNETIC LAYERS AND NICR BUFFER LAYER - A magnetic field detecting element has a stack which includes a NiCr layer, a first magnetic layer whose magnetization direction varies in accordance with an external magnetic field, a non-magnetic spacer layer, and a second magnetic layer whose magnetization direction varies in accordance with the external magnetic field, said NiCr layer, said first magnetic layer, said spacer layer and said second magnetic layer being disposed in this order and being arranged in contact with each other, wherein a sense current is adapted to flow in a direction that is perpendicular to a film surface of said stack; and a bias magnetic layer which is disposed on a side of said stack, said side being opposite to an air bearing surface of said stack, wherein said bias magnetic layer is adapted to apply a bias magnetic field to said stack in a direction that is perpendicular to said air bearing surface. Both first and second magnetic layers have bcc crystalline structures, and said non-magnetic spacer layer has a film configuration in which an insulating layer or a semiconductor layer is inserted into a metal layer. | 05-21-2009 |
| 20090161264 | Magnetic Field Sensitive Sensor - The present invention relates to a sensor, preferably for magnetic rotary or linear sensor systems which include a scale arranged at a given distance from the sensor, with at least one magnetic field-sensitive GMR sensor element which is arranged in a housing, wherein the housing additionally includes one magnetic field source each associated to the at least one GMR sensor element, wherein the at least one GMR sensor element is firmly cast into an associated slot in the housing, wherein on at least one side of the slot a projection protrudes into the interior of the housing flush with this side wall of the slot, which also includes mounting recesses for accommodating the magnetic field source. | 06-25-2009 |
| 20090161265 | Magnetic sensor, magnetic head, and magnetic memory by using spin hall devices - A magnetic sensor reduces thermal fluctuation and realizes high-sensitive signal detection using a spin Hall device of a simple structure configured with only one magnetic layer. The magnetic sensor includes a stacked film in which a nonmagnetic spin Hall layer, a nonmagnetic insulator layer, and a magnetic layer are stacked, an electrode nonmagnetic terminal pair connected to a side surface of the nonmagnetic spin Hall layer, and a unit applying a current in a film thickness direction of the stacked film. A thickness of the nonmagnetic spin Hall layer is thinner than twice a spin diffusion length of a material constituting the nonmagnetic spin Hall layer. A magnetization direction of the magnetic layer magnetized by an external magnetic field is detected due to the polarity of a voltage across both ends of the electrode nonmagnetic terminal pair. | 06-25-2009 |
| 20090168263 | READ TRANSDUCER AND MAGNETIC STORAGE SYSTEM IMPLEMENTING SAME - A transducer according to one embodiment comprises a first ferromagnetic layer; a second ferromagnetic layer; and an electrically conductive layer positioned between the ferromagnetic layers; wherein a length of the first ferromagnetic layer in a first direction parallel to a plane of deposition thereof is greater than a length of the electrically conductive layer in the first direction such that a first end of the first ferromagnetic layer extends beyond an end of the electrically conductive layer in the first direction, wherein an electrical current enters or exits the end of the first ferromagnetic layer that extends beyond the end of the electrically conductive layer in the first direction. Additional transducer structures, and systems implementing such transducers, are also disclosed. | 07-02-2009 |
| 20090168264 | Magnetoresistive element and magnetic head - In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in response to an external magnetic field. The spacer layer and the second ferromagnetic layer are stacked in this order on the first ferromagnetic layer. The first ferromagnetic layer includes a plurality of ferromagnetic material layers stacked, and an insertion layer made of a nonmagnetic material and inserted between respective two of the ferromagnetic material layers that are adjacent to each other along the direction in which the layers are stacked. The ferromagnetic material layers and the spacer layer each include a component whose crystal structure is a face-centered cubic structure. The spacer layer and the insertion layer are each composed of an element having an atomic radius greater than that of at least one element constituting the ferromagnetic material layers. | 07-02-2009 |
| 20090168265 | MAGNETIC RECORDING MEDIUM, MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a hexagonal ferrite powder and a binder on one surface of a nonmagnetic support and a backcoat layer on the other surface of the nonmagnetic support. A power spectrum density at a pitch of 10 micrometers ranges from 800 to 10,000 nm | 07-02-2009 |
| 20090174969 | MAGNETIC RECORDING MEDIUM, MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support, wherein the magnetic layer has a thickness δ ranging from 10 to 80 nm, a product, Mrδ, of a residual magnetization Mr of the magnetic layer and the thickness δ of the magnetic layer is equal to or greater than 1 mA but less than 5 mA, a ratio, Sdc/Sac, of an average area Sdc of magnetic clusters in a DC demagnetized state to an average area Sac of magnetic clusters in an AC demagnetized state as measured by a magnetic force microscope, MFM, ranges from 0.8 to 2.0. | 07-09-2009 |
| 20090174970 | MAGNETIC RECORDING MEDIUM, MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCTION METHOD - The present invention relates to a magnetic recording medium comprising a nonmagnetic layer comprising a nonmagnetic powder and a binder and a magnetic layer comprising a ferromagnetic powder and a binder in this order on a nonmagnetic support. The magnetic layer has a thickness ranging from 30 to 130 nm, and a glossiness of the magnetic layer surface ranges from 155 to 270 percent. | 07-09-2009 |
| 20090180217 | MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM - A magnetoresistive device comprising a magnetoresistive unit, an upper shield layer and a lower shield shield layer stacked such that the magnetoresistive unit is held between them. The magnetoresistive unit comprises a nonmagnetic metal intermediate layer, a first ferromagnetic layer and a second ferromagnetic layer stacked with the nonmagnetic metal intermediate layer in the middle. When no bias magnetic field is applied, the first and second ferromagnetic layers have mutually antiparallel magnetizations. The magnetoresistive unit further comprises first and second side shield layers, and first and second biasing layers located to be magnetically coupled to the first and second side shield layers, wherein magnetic fluxes fed from the bias magnetic fields pass through the first and second side shield layers positioned in proximity to the magnetoresistive unit such that the magnetizations of the first and second ferromagnetic layers become substantially orthogonal to each other. | 07-16-2009 |
| 20090207532 | MAGNETO RESISTANCE EFFECT DEVICE, HEAD SLIDER, MAGNETIC INFORMATION STORAGE APPARATUS, AND MAGNETO RESISTANCE EFFECT MEMORY - A magneto resistance effect device includes a fixed magnetization portion including a ferromagnetic material, in which the magnetization direction can be fixed, and a tunnel barrier layer including high band gap metal oxide and low band gap metal oxide, and arranged on the fixed magnetization portion. The device includes a free magnetization portion including a ferromagnetic material, arranged on the tunnel barrier layer, in which the magnetization can be changed. | 08-20-2009 |
| 20090237844 | MAGNETIC SENSOR DEVICE FOR AND A METHOD OF SENSING MAGNETIC PARTICLES - A magnetic sensor device ( | 09-24-2009 |
| 20090244788 | Magneto resistive effect element with a magnetic film generating spin fluctuation of conduction electrons - The present invention is to be capable of suppressing magnetic white noises as far as possible. A resonant magneto-resistance effect element includes a first magnetic layer whose magnetization direction is substantially parallel to a film plane, a second magnetic film whose magnetization direction is substantially perpendicular to the film plane, and a non-magnetic layer which is provided between the first and second layers. | 10-01-2009 |
| 20090251830 | MAGNETIC DETECTOR - Magnetoresistive elements each have a layered structure including a pinned magnetic layer having a magnetization direction pinned in one direction, a free magnetic layer with magnetization being variable by an external magnetic field, and a nonmagnetic material layer arranged therebetween. Assuming that a center distance between a N-pole and a S-pole of a permanent magnet is λ, the magnetoresistive elements connected in series are arranged in a direction parallel to a relative movement direction with a center distance λ arranged therebetween. Interfaces in the layers of the layered structure of each of the magnetoresistive elements are orthogonal to a facing surface of the permanent magnet, and are in the relative movement direction. The pinned magnetic layers of the magnetoresistive elements have magnetization directions, all the magnetization directions are orthogonal to the relative movement direction in a plane parallel to the interfaces. | 10-08-2009 |
| 20090257150 | Apparatus for Storing Electrical Energy - An apparatus for storing electrical energy is provided. The apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus. | 10-15-2009 |
| 20090262466 | MAGNETIC SENSOR AND MAGNETIC ENCODER USING SAME - Soft magnetic material elements are provided on both sides of each of magneto-resistance effect elements with a spacing therebetween. As a result, an external magnetic field generated from a magnet can be pulled to above a substrate on which the magneto-resistance effect element is provided, thereby making it possible to amplify the external magnetic field to be applied to the magneto-resistance effect element to more than in the related art. Since a bias magnetic field is applied to a free magnetic layer, a magnetic sensor is resistant to a disturbance magnetic field. Moreover, since the external magnetic field applied to the magneto-resistance effect element can be amplified, even if the bias magnetic field is applied to the free magnetic layer, the magnetic detection sensitivity can be apparently improved to more than in the related art, thereby increasing the output. | 10-22-2009 |
| 20090296285 | METHODS AND SYSTEMS FOR USING RESISTIVITY OF SENSOR FILM IN AN ELEMENT SHUNT - A system in one approach includes a sensor stack formed of a plurality of thin film layers; a shunt formed of at least some of the same layers as the sensor stack, the shunt being spaced from the sensor stack; a first lead coupled to the sensor stack and the shunt; and a second lead coupled to the sensor stack and the shunt. A method in one embodiment includes forming a plurality of thin film layers; removing a portion of the thin film layers for defining at least a portion of a sensor stack and at least a portion of a shunt spaced front the sensor stack; forming a first lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt and a second lead coupled to the at least a portion of the sensor stack and the at least a portion of the shunt. Additional systems and methods are also presented. | 12-03-2009 |
| 20090303640 | MAGNETO-RESISTANCE EFFECT ELEMENT PROVIDED WITH CURRENT LIMITING LAYER INCLUDING MAGNETIC MATERIAL - A magneto resistance effect element includes a first magnetic layer, a second magnetic layer and a spacer layer interposed between the first and second magnetic layers. The magneto resistance effect element is configured to allow sense current to flow in a direction that is perpendicular to film planes of the first magnetic layer, the second magnetic layer and the spacer layer so that a relative angle between a magnetization direction of the first magnetic layer and a magnetization direction of the second magnetic layer varies depending on an external magnetic field. The present invention aims at providing a magneto resistance effect element which ensures high resistance to sense current, while limiting the influence of the current limiting layer on the magnetic layer, and which thereby achieves a high magneto resistance ratio. | 12-10-2009 |
| 20100007996 | Magnetic head assembly and magnetic recording/reproducing apparatus - It is made possible to reduce the write magnetic field generated from the main magnetic pole toward the spin torque oscillator, so as to reduce the variation in the oscillation characteristics of the spin torque oscillator, and reduce the current required for oscillation. The magnetic head assembly includes: a recording magnetic pole; a spin torque oscillator that has first and second magnetic layers, and an intermediate layer interposed between the first and second magnetic layers, the spin torque oscillator generating a high-frequency magnetic field by applying a current between the first and second magnetic layers; and a third magnetic layer that is placed adjacent to at least part of a side face of the second magnetic layer. | 01-14-2010 |
| 20100079918 | Method of manufacturing magnetoresistive element, magnetoresistive element, magnetic head assembly and magnetic recording apparatus - A method of manufacturing a magnetoresistive element includes forming a metal layer on a first ferromagnetic layer, oxidizing the metal layer to form an oxide layer in which unoxidized metal is remained and a magnetic conduction column penetrating the oxide layer in a thickness direction and including at least a part of constituent elements of the first ferromagnetic layer, annealing a resultant structure at a higher temperature than a temperature at which the oxide layer is formed to convert at least a part of a periphery of the magnetic conduction column into a magnetic oxide including a part of constituent elements of the oxide layer and at least a part of constituent elements of the magnetic conduction column, and forming a second ferromagnetic layer. | 04-01-2010 |
| 20100091414 | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus - A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of krypton ions, krypton plasma, krypton radicals, xenon ions, xenon plasma and xenon radicals on the film submitted to the first treatment. | 04-15-2010 |
| 20100091415 | Method for manufacturing a magneto-resistance effect element and magnetic recording and reproducing apparatus - A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of nitrogen ions, nitrogen atoms, nitrogen plasma, and nitrogen radicals on the film submitted to the first treatment. | 04-15-2010 |
| 20100097729 | CPP DUAL FREE LAYER MAGNETORESISTIVE HEAD FOR MAGNETIC DATA STORAGE - A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is antiparallel coupled with one of the free layers. The antiparallel coupling of the third magnetic layer with one of the free layers, allows the sensor to be used in a tunnel valve design, having an electrically insulating barrier layer between the free layers. The tunnel valve design reduces spin torque noise in the sensor, and the presence of the third magnetic layer allows the free layers to remain bias at 90 degrees to one another in spite of interfacial coupling through the very thin barrier layer. | 04-22-2010 |
| 20100110592 | Spin torque oscillator, magnetic recording head, magnetic head assembly and magnetic recording apparatus - A spin torque oscillator includes a first magnetic layer, a second magnetic layer and a first nonmagnetic layer. The first magnetic layer includes a magnetic film of a magnetic material with a body-centered cubic (bcc) structure and an oriented {110} plane of the body-centered cubic structure, the oriented {110} plane being oriented substantially parallel to a principal plane of the magnetic film. The first nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer. In addition, a magnetic moment in the magnetic film precesses around an axis substantially parallel to the principal plane. Furthermore, a magnetic field is applied in a direction substantially perpendicular to the principal plane, and a current is passed perpendicularly to the principal plane. | 05-06-2010 |
| 20100165518 | ENHANCED MAGNETORESISTANCE AND LOCALIZED SENSITIVITY BY GATING IN LORENTZ MAGNETORESISTORS - A Lorentz magnetoresistive sensor that employs a gating voltage to control the momentum of charge carriers in a quantum well structure. A gate electrode can be formed at the top of the sensor structure to apply a gate voltage. The application of the gate voltage reduces the momentum of the charge carriers, which makes their movement more easily altered by the presence of a magnetic field, thereby increasing the sensitivity of the sensor. | 07-01-2010 |
| 20100232073 | Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer - A thin film magnetic head includes a magnetoresistive effect (MR) laminated body that has the following structure: first and second magnetic layers in which the magnetization direction of at least one of the magnetic layers changes according to an external magnetic field; the first magnetic layer is provided at a lower side of a laminated direction; the second magnetic layer is provided at an upper side of the laminated direction; a non-magnetic intermediate layer made of ZnO sandwiched between the first and the second magnetic layers; a first intermediate interface layer is provided at the interface between the first magnetic layer and the non-magnetic intermediate layer; and a second intermediate interface layer is provided at the interface between the non-magnetic intermediate layer and the second magnetic layer. At least the first intermediate interface layer contains Ag and Zn, or Au and Zn. | 09-16-2010 |
| 20100246073 | Magnetic recording medium, magnetic signal reproduction system and magnetic signal reproduction method - An aspect of the present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support. A height of protrusions with a protrusion density of 0.002 protrusion/μm | 09-30-2010 |
| 20110013321 | Enhanced hard bias in thin film magnetoresistive sensors with perpendicular easy axis growth of hard bias and strong shield-hard bias coupling - A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth. | 01-20-2011 |
| 20110051295 | Magnetoresistive effect element in CPP-type structure and magnetic disk device - In an MR element of the present invention, an effect of an extremely-high MR ratio is obtained since a crystal structure of a CoFe magnetic layer in the vicinity of an interface with a spacer layer is formed as a close packed structure, such as an hcp structure and an fcc structure, and a total existing ratio of these crystal structures is 25% or more by an area ratio. | 03-03-2011 |
| 20110235216 | LONGITUDINAL BIAS STACK FOR A CURRENT-PERPENDICULAR-TO-PLANE (CPP) READ SENSOR - A read head having an improved longitudinal bias stack for stabilizing the sense layer structure of a CPP read sensor is proposed. The longitudinal bias stack is separated by an insulation layer from the CPP read sensor in each of two side regions, and is sandwiched together with the insulation layer and the CPP read sensor between lower and upper ferromagnetic shields in the read head. In a preferred embodiment of the invention, the longitudinal bias stack mainly comprises an Fe—Pt longitudinal bias layer without any seed layers, and thus the thickness of the insulation layer alone defines a spacing between the Fe—Pt longitudinal bias layer and the CPP read sensor. Since the Fe—Pt longitudinal bias layer without any seed layers exhibits good in-plane hard-magnetic properties after annealing and the spacing is narrow, the stabilization scheme is effective. | 09-29-2011 |
| 20110299198 | MAGNETIC RECORDING MEDIUM, MAGNETIC SIGNAL REPRODUCTION SYSTEM AND MAGNETIC SIGNAL REPRODUCING METHOD - The present invention relates to a magnetic recording medium comprising a magnetic layer comprising a ferromagnetic powder and a binder on a nonmagnetic support, wherein the magnetic layer has a thickness δ ranging from 10 to 80 nm, a product, Mrδ, of a residual magnetization Mr of the magnetic layer and the thickness δ of the magnetic layer is equal to or greater than 1 mA but less than 5 mA, a ratio, Sdc/Sac, of an average area Sdc of magnetic clusters in a DC demagnetized state to an average area Sac of magnetic clusters in an AC demagnetized state as measured by a magnetic force microscope, MFM, ranges from 0.8 to 2.0. | 12-08-2011 |
| 20120075752 | MAGNETIC HEAD - According to one embodiment, there is provided a magnetic head for a three-dimensional magnetic recording/reproducing apparatus, the head executing reading from or writing to a recording medium, utilizing a magnetic resonance, the medium including stacked layers formed of magnetic substances having different resonance frequencies, the head comprising a spin torque oscillation unit and auxiliary magnetic poles. The unit is operable to simultaneously oscillate at a plurality of frequencies to cause the magnetic resonance, when reading or writing. The magnetic poles assist the unit, when reading or writing. Further, according to another embodiment, there is provided a recording magnetic head using a high-frequency assist method and comprising a microwave magnetic field applying unit and a recording magnetic pole. The unit executes writing to a recording medium, and is formed of a plurality of spin torque oscillation elements having phases thereof synchronized. The magnetic pole assists the writing. | 03-29-2012 |
| 20140098443 | MAGNETORESISTIVE-BASED MIXED ANISOTROPY HIGH FIELD SENSOR - A mixed anisotropy magnetic field sensor includes a first magnetic material film having in-plane anisotropy with a first magnetic easy axis that is in-plane, a second magnetic material film having out-of-plane anisotropy with a second magnetic easy axis that is perpendicular to the first magnetic easy axis of the first magnetic material film, and a non-magnetic spacer between the first magnetic material film and the second magnetic material film. The first magnetic material film has a magnetization oriented in a first magnetization orientation parallel to the first magnetic easy axis in the presence of no applied magnetic field, and the second magnetic material film has a magnetization oriented in a second magnetization orientation parallel to the second magnetic easy axis in the presence of no applied magnetic field. | 04-10-2014 |
| 20140362477 | MAGNETO-RESISTANCE EFFECT DEVICE, AND MAGNETIC RECORDER - According to one embodiment, a magneto-resistance effect device includes: a multilayer structure having a cap layer; a magnetization pinned layer; a magnetization free layer provided between the cap layer and the magnetization pinned layer; a spacer layer provided between the magnetization pinned layer and the magnetization free layer; a function layer which is provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer, the function layer having oxide containing at least one element selected from Zn, In, Sn and Cd, and at least one element selected from Fe, Co and Ni; and a pair of electrodes for applying a current perpendicularly to a film plane of the multilayer structure. | 12-11-2014 |
