| Entries |
| Document | Title | Date |
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| 20080223825 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - A substrate processing apparatus includes: a gas supply mechanism supplying gas containing a halogen element and basic gas into a process chamber; and a first temperature adjusting member and a second temperature adjusting member adjusting a temperature of the substrate in the process chamber, wherein the second temperature adjusting member adjusts the temperature of the substrate to a higher temperature than the first temperature adjusting member. | 09-18-2008 |
| 20080230518 | GAS FLOW DIFFUSER - A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a chamber body having an interior volume, a substrate support disposed in the interior volume and a gas distribution assembly having an asymmetrical distribution of gas injection ports. In another embodiment, a method for vacuum processing a substrate is provided that includes disposing a substrate on a substrate support within in a processing chamber, flowing process gas into laterally into a space defined above a gas distribution plate positioned in the processing chamber over the substrate, and processing the substrate in the presence of the processing gas. | 09-25-2008 |
| 20080245770 | Positive Displacement Pumping Chamber - A substrate processing system as illustrated at ( | 10-09-2008 |
| 20090032496 | METHOD FOR MANUFACTURING THERMAL INTERFACE MATERIAL HAVING CARBON NANOTUBES - A method for manufacturing a thermal interface material includes the following steps: providing a carbon nanotube array formed on a substrate, the carbon nanotube array having a number of carbon nanotubes and a number of interstices between the adjacent carbon nanotubes; filling a liquid state first base material into the interstices; curing the first base material, thereby achieving a carbon nanotube/first base material composite; dripping a liquid state second base material onto the surface of the carbon nanotube/first base material composite, the first base material melting and flowing out of the carbon nanotube/first base material composite, until the carbon nanotube array being substantially submerged in the second base material; and curing the second base material, thereby achieving a thermal interface material. | 02-05-2009 |
| 20090095713 | NOVEL METHODS FOR CLEANING ION IMPLANTER COMPONENTS - A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber. | 04-16-2009 |
| 20090159566 | METHOD AND APPARATUS FOR CONTROLLING TEMPERATURE OF A SUBSTRATE - A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, method for controlling a substrate temperature during processing includes placing a substrate on a substrate pedestal assembly in a vacuum processing chamber, controlling a temperature of the substrate pedestal assembly by flowing a heat transfer fluid through a radial flowpath within the substrate pedestal assembly, the radial flowpath including both radially inward and radially outward portions, and plasma processing the substrate on the temperature controlled substrate pedestal assembly. In another embodiment, plasma processing may be at least one of a plasma treatment, a chemical vapor deposition process, a physical vapor deposition process, an ion implantation process or an etch process, among others. | 06-25-2009 |
| 20090206055 | PLASMA PROCESSING APPARATUS AND METHOD, AND BAFFLE PLATE OF THE PLASMA PROCESSING APPARATUS - In a plasma processing apparatus for performing a plasma process on a target substrate, a baffle plate has an opening through which the process passes and partitions the internal space of the processing container into a plasma process space and an exhaust space, the opening being a single continuous slit. The baffle plate is disposed in an annular gas exhaust path around the mounting table, and the slit includes a plurality of linear slit portions extending in a radial direction of the annular baffle plate and a plurality of curved slit portions, each of which interconnects ends of a pair of the adjacent linear slit portions, so that the slit is formed in a wave shape in its entirety. | 08-20-2009 |
| 20090212014 | METHOD AND SYSTEM FOR PERFORMING MULTIPLE TREATMENTS IN A DUAL-CHAMBER BATCH PROCESSING SYSTEM - A processing system for treating a plurality of substrates is described. The processing system comprises a first batch processing system configured to chemically treat the plurality of substrates and a second batch processing system configured to thermally treat the plurality of substrates. A transfer system is coupled to the first batch processing system and the second batch processing system, and configured to transfer the plurality of substrates into and out of each batch processing system. Furthermore, a control system is coupled to the first batch processing system, the second batch processing system and the transfer system, and configured to execute a chemical removal process. | 08-27-2009 |
| 20090272719 | SYSTEM AND METHOD FOR PEDESTAL ADJUSTMENT - A pedestal positioning assembly system for use in a substrate processing system includes a pedestal rigidly attached to a pedestal shaft, a reference rigidly attached to the substrate processing system, a lateral adjustment assembly to adjust a lateral location of the pedestal relative to the reference, and a vertical adjustment assembly to adjust a tilt of the pedestal relative to the reference. The lateral adjustment assembly and the vertical adjustment assembly are external to a processing chamber and are coupled to the pedestal disposed within the processing chamber through the pedestal shaft. The reference can be a ring and the lateral adjustment assembly substantially centers the pedestal within the ring. A method of adjusting a pedestal includes leveling the pedestal, translating the pedestal, calibrating the pedestal height to a preheat ring level, and checking the level and location of the pedestal while rotating the pedestal. | 11-05-2009 |
| 20100032410 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a bath in which a liquid or a gas is fed, and a mechanism which feeds out a liquid or a gas into the bath. The substrate processing apparatus processes a to-be-processed substrate which is disposed in the bath. The mechanism includes a first feed-out device and a second feed-out device configured to feed out the liquid or gas into the bath, the first feed-in device configured to start/stop the feed-out of the liquid or gas from the first feed-out device, and second feed-in device configured to start/stop the feed-out of the liquid or gas from the second feed-out device. | 02-11-2010 |
| 20100102030 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND COMPUTER READABLE STORAGE MEDIUM - A substrate processing apparatus is disclosed for bringing a substrate from a carrier, by a substrate transfer portion inside a transfer chamber, into a processing module to perform a process therein. The substrate processing apparatus includes a substrate storing chamber coupled to an exterior of the transfer chamber via a transfer opening to be in communications with the transfer chamber; a first storing shelf in the substrate storing chamber to store substrates for a first storing purpose; a second storing shelf in the substrate storing chamber to store substrates for a second storing purpose different from the first storing purpose; and a shifting mechanism that shifts the first and the second storing shelves to position a substrate storing area of one of the first and the second storing shelves so that substrate transferring is enabled between the substrate storing area and the substrate transfer portion via the transfer opening. | 04-29-2010 |
| 20100116786 | ETCHING METHOD AND APPARATUS - When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion. | 05-13-2010 |
| 20100116787 | ETCHING METHOD AND APPARATUS - When a substrate is etched by using a processing gas including a first gas containing halogen and carbon and having a carbon number of two or less per molecule, while supplying the processing gas toward the substrate independently from a central and a peripheral portion of a gas supply unit, which face the central and the periphery part of the substrate respectively, the processing gas is supplied such that a gas flow rate is greater in the central portion than in the peripheral portion. When the substrate is etched by using a processing gas including a second gas containing halogen and carbon and having a carbon number of three or more per molecule, the processing gas is supplied such that a gas flow rate is greater in the peripheral portion than in the central portion. | 05-13-2010 |
| 20100126962 | Spin head and method of chucking substrate using the same - Provided is a spin head. Chuck pins, installed at a support plate to support the lateral surface of a substrate, are moved along the perpendicular direction to the radial direction of the support plate. The effect of centrifugal force applied to the chuck pins during the rotation of the support plate is minimized to support a substrate stably. | 05-27-2010 |
| 20100200545 | NON-CONTACT SUBSTRATE PROCESSING - Embodiments of the present invention provide apparatus and methods for supporting, positioning or rotating a semiconductor substrate during processing. One embodiment of the present invention provides a method for processing a substrate comprising positioning the substrate on a substrate receiving surface of a susceptor, and rotating the susceptor and the substrate by delivering flow of fluid from one or more rotating ports. | 08-12-2010 |
| 20100237046 | DRY NON-PLASMA TREATMENT SYSTEM AND METHOD OF USING - A dry non-plasma treatment system and method for removing oxide material is described. The treatment system is configured to provide chemical treatment of one or more substrates, wherein each substrate is exposed to a gaseous chemistry under controlled conditions including surface temperature and gas pressure. Furthermore, the treatment system is configured to provide thermal treatment of each substrate, wherein each substrate is thermally treated to remove the chemically treated surfaces on each substrate. | 09-23-2010 |
| 20100282710 | SHUTTERED GATE VALVE - Embodiments of gate valves and methods of using same are provided herein. In some embodiments, a gate valve for use in a process chamber may include a body having an opening disposed therethrough from a first surface to an opposing second surface of the body; a pocket extending into the body from a sidewall of the opening; a gate movably disposed within the pocket between a closed position that seals the opening and an open position that reveals the opening and disposes the gate completely within the pocket; and a shutter configured to selectively seal the pocket when the gate is disposed in the open position. In some embodiments, one or more heaters may be coupled to at least one of the body or the shutter. | 11-11-2010 |
| 20100301011 | APPARATUS AND METHOD FOR DOWNSTREAM PRESSURE CONTROL AND SUB-ATMOSPHERIC REACTIVE GAS ABATEMENT - A sub-atmospheric downstream pressure control apparatus includes a first flow restricting element (FRE); a pressure control chamber (PCC) located in serial fluidic communication downstream from the first FRE; a second FRE located in serial fluidic communication downstream from the PCC; a gas source; and a flow controlling device in serial fluidic communication downstream from the gas source and upstream from the PCC. | 12-02-2010 |
| 20110006038 | PLASMA PROCESSING CHAMBER WITH ENHANCED GAS DELIVERY - A method and apparatus for providing flow into a processing chamber are provided. In one embodiment, a vacuum processing chamber is provided that includes a substrate support pedestal disposed in an interior volume of a chamber body, a lid enclosing the interior volume, a gas distribution plate positioned below the lid and above the substrate support pedestal, and a vortex inducing gas inlet oriented to induce a vortex of gas circulating in a plenum around a center line of the chamber body prior to the gas passing through the gas distribution plate. | 01-13-2011 |
| 20110062113 | SUBSTRATE PROCESSING APPARATUS AND METHOD - A bypass route is provided in order to transfer a substrate without passing through the normal pressure transfer chamber, that is, a loader module, from a load lock chamber to a storage. In the bypass route, a sub-transfer unit for transferring the processed substrate from the load lock chamber to the storage is provided. The sub-transfer unit transfers the processed substrate from the load lock chamber to the storage, and a main transfer unit of the loader module returns the processed substrate from the storage to a transport container on holding stage. | 03-17-2011 |
| 20110068084 | SUBSTRATE HOLDER AND SUBSTRATE TEMPERATURE CONTROL METHOD - A substrate holder which has an electrostatic chuck on a substrate holding side of a holder main body and electrostatically adsorbs a substrate includes: a heating unit which is built in the electrostatic chuck and heats the substrate; a circulation medium distribution path which is formed inside the holder main body and connected to a circulation medium supplying unit which circulates and supplies a circulation medium; a heat transference varying unit which is formed by sealing a heat transfer gas in a gap between the holder main body and the electrostatic chuck and connected to a heat transfer gas supply system which can control a sealing pressure; and a gas sealing unit which is formed by sealing a heat transfer gas in a gap between the electrostatic chuck and the substrate and connected to the heating transfer gas supply system. | 03-24-2011 |
| 20110174775 | SURFACE PROCESSING APPARATUS - To prevent a processing gas from leaking from a processing tank for processing a surface of a substrate and to stabilize flow of the processing gas in a processing space. | 07-21-2011 |
| 20110186544 | METHOD OF ACCELERATING SELF-ASSEMBLY OF BLOCK COPOLYMER AND METHOD OF FORMING SELF-ASSEMBLED PATTERN OF BLOCK COPOLYMER USING THE ACCELERATING METHOD - A block copolymer film is formed on a substrate. Then, the block copolymer film is annealed in an inert-gas atmosphere, for example, in a neon atmosphere. This places the outside (mainly the upper portion) of the block copolymer film in a nonpolar state, thereby strongly drawing, for example, a monomer unit having hydrophobic characteristics outside the block copolymer film to accelerate self-assembly. This results in an improvement in throughput in self-assembled pattern formation of the block copolymer film. | 08-04-2011 |
| 20110204029 | PROCESSING SYSTEM AND METHOD FOR CHEMICALLY TREATING A SUBSTRATE - A processing system and method for chemically treating a substrate, wherein the processing system comprises a temperature controlled chemical treatment chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, without plasma, under controlled conditions including wall temperature, surface temperature and gas pressure. The chemical treatment of the substrate chemically alters exposed surfaces on the substrate. | 08-25-2011 |
| 20120111833 | SUBSTRATE PROCESSING METHOD - There is provided a substrate processing method, in which a throughput can be improved even in case the time for recovery processing for restoring the state of a processing chamber is longer than the time for predetermined processing to be performed in the processing chamber. Substrates are alternately transferred to two processing chambers C, D, and the same film forming processing is performed on the substrates in the processing chambers C, D in parallel with each other. When the number of substrates processed in the processing chamber C has reached a predetermined number (11 substrates), dummy sputtering processing in the film forming chamber C is started and also 23rd-25th substrates of the first lot are transferred to the film forming chamber D to thereby perform film forming processing until the dummy sputtering processing is finished. | 05-10-2012 |
| 20120160805 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method comprises: an execution step of executing the first processing for the plurality of substrates, and executing the second processing for the substrates having undergone the first processing; a recovery step of recovering the plurality of substrates having undergone the first processing and the second processing to the retraction chamber; a conditioning step of, after completion of the first processing for the last substrate among the plurality of substrates, loading a dummy substrate into the first processing chamber, executing the third processing for the dummy substrate, and unloading the dummy substrate from the first processing chamber; and a second execution step of, after the dummy substrate is unloaded from the first processing chamber in the conditioning step, loading the substrates recovered in the recovery step into the first processing chamber, and executing the third processing for the substrates loaded into the first processing chamber. | 06-28-2012 |
| 20120175343 | APPARATUS AND METHOD FOR ETCHING A WAFER EDGE - An apparatus and method for etching a portion of a wafer include a mount for holding a wafer having an edge, a front surface, a back surface and an axis perpendicular to the front and back surfaces. A frame is used to deliver an etchant to the wafer edge while the wafer is held with the wafer edge at a distance from the frame. A nonreactive fluid flow may be provided and directed along the front and back surfaces of the wafer edge to drive the etchant away from the front and back surfaces. The frame can be configured either to deliver the etchant in liquid form or to deliver the etchant in vapor form. The frame can include a plenum for directing the etchant in vapor form to the wafer edge within a receiving area of the plenum, or the frame can include a roller having a groove for receiving the wafer edge and for drawing the etchant in liquid form to the wafer edge. | 07-12-2012 |
| 20120273462 | ETCHING DEVICE AND A METHOD FOR ETCHING A MATERIAL OF A WORKPIECE - An etching device is provided, the etching device including a process chamber including an etchant, a structure configured to provide a laminar flow of the etchant, and a workpiece handler configured to move a workpiece through the laminar flow of the etchant along a predefined track. | 11-01-2012 |
| 20120292289 | TRANSPORT ROLLER FOR THE VACUUM TREATMENT OF SUBSTRATES - A transport cylinder for the vacuum treatment of substrates includes a roll body and at least one spacer element arranged on the roll body and enveloping the roll body. The spacer element is made of a knitted tube containing metallic or/and metallic threads. | 11-22-2012 |
| 20120292290 | SUBSTRATE PROCESSING METHOD, SYSTEM AND PROGRAM - A substrate processing method is used for a substrate processing system having a substrate processing device and a substrate transfer device. The substrate processing method includes a substrate transfer step of transferring a substrate and a substrate processing step of performing a predetermined process on the substrate. The substrate transfer step and the substrate processing step include a plurality of operations, and at least two operations among the plurality of the operations are performed simultaneously. Preferably, the substrate processing device includes an accommodating chamber, a mounting table placed in the accommodating chamber to be mounted thereon the substrate, and a heat transfer gas supply line for supplying a heat transfer gas to a space between the substrate mounted on the mounting table and the mounting table. | 11-22-2012 |
| 20130001194 | APPARATUSES AND METHODS FOR TREATING SUBSTRATE - Provided is a substrate treating apparatus, which includes a process chamber providing a space in which a substrate is treated, an exhausting pipe connected to the process chamber, and providing a passage through which gas is discharged from the process chamber to an outside thereof, a pump installed on the exhausting pipe, and a valve installed on the exhausting pipe between the process chamber and the pump, and opening and closing the passage. The valve includes a first plate provided with exhausting holes, and a first driver moving the first plate such that the exhausting holes are located within the passage or outside the passage. | 01-03-2013 |
| 20130026135 | APPARATUSES, SYSTEMS AND METHODS FOR TREATING SUBSTRATE - Provided is an apparatus, system and method for treating a substrate, and more particularly, a substrate treating apparatus having a cluster structure, a substrate treating system, and a substrate treating method using the substrate treating system. The substrate treating apparatus includes a load port on which a container containing a substrate is installed, a plurality of process modules treating the substrate, a transfer module disposed between the load port and the process modules, and transferring the substrate between the container and the process modules, and a buffer chamber disposed between neighboring ones of the process modules, and providing a space for carrying the substrate between the neighboring process modules. | 01-31-2013 |
| 20130134128 | DEVICE AND METHOD FOR TREATING WAFER-SHAPED ARTICLES - A method and device for processing wafer-shaped articles comprises a closed process chamber. A rotary chuck is located within the process chamber, and is adapted to hold a wafer shaped article thereon. An interior fluid distribution ring is positioned above the rotary chuck, and comprises an annular surface inclined downwardly from a radially inner edge to a radially outer edge thereof. At least one fluid distribution nozzle extends into the closed process chamber and is positioned so as to discharge fluid onto the annular surface of the fluid distribution ring. | 05-30-2013 |
| 20130175241 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A solvent vapor containing a solvent material capable of dissolving hydrogen fluoride is supplied to a surface of a substrate, thereby covering the surface of the substrate with a liquid film containing solvent material. Thereafter an etching vapor containing a hydrogen fluoride is supplied to the surface of the substrate covered by the liquid film containing the solvent material, thereby etching the surface of the substrate. | 07-11-2013 |
| 20130186857 | POSITIVE DISPLACEMENT PUMPING CHAMBER - A method is for processing a substrate. The method includes placing the substrate in a process volume and introducing a process gas or vapour into the process volume and/or subsequently removing gas or vapour from the volume. The step of introducing and/or removing the gas is at least partially performed by moving a movable wall to change the process volume in an appropriate sense. | 07-25-2013 |
| 20130233827 | METHODS AND MATERIALS FOR REMOVING METALS IN BLOCK COPOLYMERS - The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer. | 09-12-2013 |
| 20130284700 | PROPORTIONAL AND UNIFORM CONTROLLED GAS FLOW DELIVERY FOR DRY PLASMA ETCH APPARATUS - Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved uniformity. One embodiment of the present invention provides a gas injection assembly. The gas injection assembly includes an inlet hub, a nozzle having a plurality of injection passages disposed against the inlet hub, and a distribution insert disposed between the nozzle and the inlet hub. The distribution insert has one or more gas distribution passages configured to connect the inlet hub to the plurality of the injection passages the nozzle. Each of the one or more gas distribution passages has one inlet connecting with a plurality of outlets, and distances between the inlet and each of the plurality of outlets are substantially equal. | 10-31-2013 |
| 20140076849 | ETCHING APPARATUS AND ETCHING METHOD - An etching apparatus includes: a chamber configured to accommodate a substrate to be processed having an etching target film; a gas exhaust mechanism configured to exhaust an inside of the chamber; an etching gas supply mechanism configured to supply an etching gas into the chamber; and a gas cluster generation mechanism configured to generate a gas cluster in the chamber by spraying a cluster gas into the chamber, wherein a gas produced by a reaction when the etching target film is etched with the etching gas is discharged from the chamber by the gas cluster generated by the gas cluster generation mechanism. | 03-20-2014 |
| 20140076850 | METHODS AND APPARATUS FOR PROVIDING A GAS MIXTURE TO A PAIR OF PROCESS CHAMBERS - A method and apparatus for supplying a gas mixture to a load lock chamber is described. In one embodiment, the apparatus supplies a gas mixture to a pair of process chambers, comprising a first ozone generator to provide a first gas mixture to a first process chamber, a second ozone generator to provide a second gas mixture to a second process chamber, a first gas source coupled to the first ozone generator via a first mass flow controller and a first gas line, and coupled to the second ozone generator via a second mass flow controller and a second gas line, and a second gas source coupled to the first ozone generator via a third mass flow controller and a third gas line and coupled to the second ozone generator via fourth mass flow controller and a fourth gas line. | 03-20-2014 |
| 20140151330 | METHODS AND MATERIALS FOR REMOVING METALS IN BLOCK COPOLYMERS - The present invention relates to a method for treating a block copolymer solution, wherein the method comprises: providing a solution comprising a block copolymer in a non aqueous solvent; and, treating the solution to remove metals using an ion exchange resin. The invention also relates to a method of forming patterns using the treated block copolymer. | 06-05-2014 |
| 20150303035 | SYSTEMS AND METHODS FOR PROVIDING GASES TO A PROCESS CHAMBER - A gas supply system for providing a plurality of process gases to a process chamber includes a plurality of mass flow controllers each arranged to receive a respective subset of the plurality of process gases. Each of the respective subsets includes more than one of the process gases, and at least one of the process gases is provided to more than one of the plurality of mass flow controllers. Respective valves are arranged upstream of each of the plurality of mass flow controllers to selectively provide the respective subsets to the mass flow controllers. A first quantity of the plurality of mass flow controllers is less than a total number of the plurality of process gases to be supplied to the process chamber. The first quantity is equal to a maximum number of the plurality of process gases to be used in the process chamber at any one time. | 10-22-2015 |
| 20160064196 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus that performs plasma processing on a substrate held on a transport carrier including an annular frame and a holding sheet. The apparatus includes: a process chamber; a plasma excitation device that generates plasma; a stage in the chamber; a cooling mechanism for cooling the stage; a cover that partly covers the holding sheet and the frame and has a window section through which the substrate is partly exposed to plasma; and a movement device that moves a relative position of the cover to the frame. The cover has a roof section, a cylindrical circumferential side section extending from a circumferential edge of the roof section toward the stage, and a correction member that protrudes from the roof section and/or the circumferential side section toward the frame and presses the frame onto the stage to correct warpage of the frame. | 03-03-2016 |
| 20160093473 | SYSTEMS AND METHODS OF TREATING A SUBSTRATE - Substrate treating systems are disclosed. The system may include a chamber with a processing space, a supporting unit provided in the processing space to support a substrate, a gas supplying unit provided in the processing space to supply gas into the processing space, a plasma source unit generating plasma from the gas, and a liner unit disposed to enclose the supporting unit. The supporting unit may include a supporting plate supporting a substrate. The liner unit may include an inner liner enclosing the supporting plate and an actuator vertically moving the inner liner. | 03-31-2016 |
| 20160115591 | REACTOR FOR PRODUCING POLYCRYSTALLINE SILICON AND METHOD FOR REMOVING A SILICON-CONTAINING LAYER ON A COMPONENT OF SUCH A REACTOR - Silicon deposited by CVD and/or silico dust is removed from a polycrystalline silicon deposition reactor component by abrasion with silicon-containing particles in a gas stream. | 04-28-2016 |
| 20170233532 | THIN FILM SELF ASSEMBLY OF TOPCOAT-FREE SILICON-CONTAINING DIBLOCK COPOLYMERS | 08-17-2017 |
