| Entries |
| Document | Title | Date |
|---|
| 20080237182 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus that can improve the uniformity of plasma processing carried out on a wafer. The wafer is housed in a chamber of the substrate processing apparatus and subjected to plasma processing using plasma produced in the processing chamber. A temperature control mechanism jets a high-temperature gas toward at least part of an annular focus ring facing the plasma. | 10-02-2008 |
| 20090008362 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a microwave-absorbing heat-generating member disposed along an inside surface of a plasma processing chamber to absorb microwaves and generate heat, wherein the microwave-absorbing heat-generating member is heated by microwaves without exciting plasma, and wherein, after that, a substrate to be processed is loaded into the plasma processing chamber and then plasma is excited to process the substrate. | 01-08-2009 |
| 20090065477 | PULSED-CONTINUOUS ETCHING - In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent. | 03-12-2009 |
| 20090188892 | METHOD OF CHECKING SUBSTRATE EDGE PROCESSING APPARATUS - A method of checking a substrate edge processing apparatus, which can accurately check the state of the substrate edge processing apparatus. The thickness of an organic film formed on a surface of a substrate is measured, and a predetermined process in which undesired substance attached to an edge of the substrate is removed is carried out on a predetermined portion of the organic film using the substrate edge processing apparatus. The film thickness of the predetermined portion is then measured. The removal amount of the organic film is calculated based on the measurement results, and the performance of the substrate edge processing apparatus is evaluated based on the calculated removal amount. | 07-30-2009 |
| 20090194505 | VACUUM COATING TECHNIQUES - Techniques are described for improving the quality and yield of vacuum-processed substrates. A system can include a tape-like substrate that is supplied by unwind spool to a web guide, tension control roller, and additional idler rolls. The substrate can then enter a coating zone, following an essentially spiral pathway and traversing the coating source a number of times before exiting the coating zone and rewinding on spool. The effect of multiple passes through various flux areas of source is to smooth and average out the coating thickness non-uniformities resulting from a non-uniform flux. Related methods are described. Embodiments can be particularly well suited for the manufacture of data tapes including, but not limited to, metal evaporated magnetic, magneto-optical, phase change optical, and preformatted, or thin-film electronics, sensors, RFID tags, and solar films, to name a few examples. | 08-06-2009 |
| 20090206056 | Method and Apparatus for Plasma Process Performance Matching in Multiple Wafer Chambers - A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations. | 08-20-2009 |
| 20090308843 | METHOD OF ETCHING A SACRIFICIAL SILICON OXIDE LAYER - A controlled method of releasing a microstructure comprising a silicon oxide layer located between a substrate layer and a layer to be released from the silicon oxide layer is described. The method comprises the step of exposing the silicon oxide layer to a hydrogen fluoride vapour in a process chamber having controlled temperature and pressure conditions. A by-product of this reaction is water which also acts as a catalyst for the etching process. It is controlled employment of this inherent water source that results in a condensed fluid layer forming, and hence etching taking place, only on the exposed surfaces of the oxide layer. The described method therefore reduces the risk of the effects of capillary induced stiction within the etched microstructure and/or corrosion within the microstructure and the process chamber itself. | 12-17-2009 |
| 20100025368 | HIGH THROUGHPUT THERMAL TREATMENT SYSTEM AND METHOD OF OPERATING - A high throughput thermal treatment system for processing a plurality of substrates is described. The thermal treatment system is configured to thermally treat a plurality of substrates chemically treated in a dry, non-plasma environment. | 02-04-2010 |
| 20100089869 | NANOMANUFACTURING DEVICES AND METHODS - Devices for performing nanofabrication are provided which provide small volume reaction space and high reaction versatility. A device may include a reaction chamber adapted for nanoscale modification of a substrate and vacuum conditions; a scanning probe tip assembly enclosed within the reaction chamber; a first port coupled to the reaction chamber for delivering a gas; a second port coupled to the reaction chamber for applying a vacuum; and a substrate assembly insertedly mounted to the reaction chamber. The reaction chamber may include a body having one or more flexible walls and one or more supports to prevent the reaction chamber from collapsing under a vacuum. The device may further include an electrical conduit for coupling the tips of the scanning probe tip assembly to electrical components outside the reaction chamber. Also provided are apparatuses incorporating the devices and methods of using the devices and apparatuses. | 04-15-2010 |
| 20100126963 | PULSED-CONTINUOUS ETCHING - In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent. | 05-27-2010 |
| 20100320170 | METHOD AND APPARATUS FOR ETCHING A STRUCTURE IN A PLASMA CHAMBER - A plasma processing apparatus includes a plasma reaction chamber in which a plasma is generated for processing. First and second electrodes are located in the chamber for generating the plasma. First and second RF power sources provide RF power to the first and second electrodes, respectively. The apparatus also includes first and second impedance matching circuits through which the RF power is respectively provided from the first and second RF power supplies to the first and second electrodes. A first plasma controller monitors plasma density and, in response thereto, adjusts the RF power supplied by the first RF power source to the first electrode to achieve a given plasma density. A second plasma controller monitors the ion energy of plasma species impinging on a semiconductor structure associated with the second electrode and, in response thereto, adjusts the RF power supplied by the second RF power source to the second electrode to achieve a given ion energy. | 12-23-2010 |
| 20110031214 | VACUUM PROCESSING CHAMBERS INCORPORATING A MOVEABLE FLOW EQUALIZER - A method and apparatus for vacuum processing of a workpiece, the apparatus including a flow equalizer disposed in a vacuum processing chamber between a workpiece support pedestal and a pump port located in a wall of the vacuum processing chamber. In an embodiment, the flow equalizer has a first annular surface concentric about the workpiece support pedestal to provide conductance symmetry about the workpiece support even when the pump port is asymmetrically positioned within the vacuum processing chamber. In an embodiment, the flow equalizer has a second annular surface facing a lower surface of the workpiece support pedestal to restrict conductance as the flow equalizer is moved is response to a chamber pressure control signal. In an embodiment, the apparatus for vacuum processing of a workpiece includes tandem vacuum processing chambers sharing a vacuum pump with each tandem chamber including a flow equalizer to reduce cross-talk between the tandem chambers. | 02-10-2011 |
| 20110049098 | PLASMA ETCHING METHOD - In a plasma etching method of performing a plasma etching on an amorphous carbon layer of a substrate to be processed by using an inorganic film as a mask, the substrate being mounted in a processing chamber, the plasma etching on the amorphous carbon layer is performed by using O | 03-03-2011 |
| 20110056912 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Uniformity in a plasma process can be increased by increasing a plasma confining effect by a cusp magnetic field over the whole circumference. There is provided a plasma processing apparatus which performs a process on a substrate by generating plasma of a processing gas in a depressurized processing chamber. The apparatus includes a magnetic field generation unit | 03-10-2011 |
| 20110068085 | METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR USING MULTIPLE ZONE FEED FORWARD THERMAL CONTROL - A method of controlling wafer temperature in a plasma reactor by obtaining the next scheduled change in RF heat load on the workpiece, and using thermal modeling to estimate respective changes in wafer backside gas pressure and in coolant flow through a wafer support pedestal that would compensate for the next scheduled change in RF heat load, and making the respective changes in the backside gas pressure or in the coolant flow prior to the time of the next scheduled change. | 03-24-2011 |
| 20110108524 | LOCAL PLASMA CONFINEMENT AND PRESSURE CONTROL ARRANGEMENT AND METHODS THEREOF - An arrangement for performing pressure control within a processing chamber substrate processing is provided. The arrangement includes a peripheral ring configured at least for surrounding a confined chamber volume that is configured for sustaining a plasma for etching the substrate during substrate processing. The peripheral ring includes a plurality of slots that is configured at least for exhausting processed byproduct gas from the confined chamber volume during substrate processing. The arrangement also includes a conductive control ring that is positioned next to the peripheral ring and is configured to include plurality of slots. The pressure control is achieved by moving the conductive control ring relative to the peripheral ring such that a first slot on the peripheral ring and a second slot on the conductive control ring are offset with respect to one another in a range of zero offset to full offset. | 05-12-2011 |
| 20110132873 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MEASURING DISTANCE BETWEEN ELECTRODES, AND STORAGE MEDIUM STORING PROGRAM - A distance between electrodes can be accurately measured by using a lifter. A substrate processing apparatus includes an upper electrode | 06-09-2011 |
| 20110139749 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND PROGRAM FOR IMPLEMENTING THE METHOD - A substrate processing method which is capable of enhancing productivity in manufacturing product substrates. In process chambers of an etching apparatus, etching is carried out on a substrate as an object to be processed, and dummy processing is carried out on at least one non-product substrate before execution of the etching. A host computer determines whether or not the dummy processing is to be executed. The host computer determines whether or not the interior of each of the process chambers and is in a stable state, and omits the execution of the dummy processing when it is determined that it is in the stable state. | 06-16-2011 |
| 20110168671 | PROCESS CONTROL USING SIGNAL REPRESENTATIVE OF A THROTTLE VALVE POSITION - In accordance with an embodiment of the invention, a step in a fabrication process can be conducted so as to determine when the process has reached an end point. End point detection can be performed by detecting when a operating process condition changes. For example, in one embodiment, a step in a fabrication process (e.g., an etching step) can be conducted in a chamber by varying a position of a throttle valve connected to the chamber so as to maintain a desired pressure within the chamber. In such method, it can be determined when the etching step has reached an end point by detecting when a signal representative of the throttle valve position changes in a particular way which matches an expected signature. In another embodiment, a step in a fabrication process can be conducted in a chamber by maintaining a desired flow within the chamber, such as by controlling a throttle valve, and allowing the pressure within the chamber to vary. In such method, it can be determined when the step has reached an end point by detecting when a signal representative of the pressure changes. In a particular embodiment in which end point detection is based on change in pressure, the throttle valve can be maintained at a particular position when conducting the step in the fabrication process. | 07-14-2011 |
| 20110174776 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND END POINT DETECTION METHOD - A plasma processing apparatus ( | 07-21-2011 |
| 20110186545 | FEEDFORWARD TEMPERATURE CONTROL FOR PLASMA PROCESSING APPARATUS - Methods and systems for controlling temperatures in plasma processing chamber with reduced controller response times and increased stability. Temperature control is based at least in part on a feedforward control signal derived from a plasma power input into the processing chamber. A feedforward control signal compensating disturbances in the temperature attributable to the plasma power may be combined with a feedback control signal counteracting error between a measured and desired temperature. | 08-04-2011 |
| 20110266256 | METHODS FOR PROCESSING SUBSTRATES IN PROCESS SYSTEMS HAVING SHARED RESOURCES - Methods for processing substrates in twin chamber processing systems having first and second process chambers and shared processing resources are provided herein. In some embodiments, a method may include providing a substrate to the first process chamber of the twin chamber processing system, wherein the first process chamber has a first processing volume that is independent from a second processing volume of the second process chamber; providing one or more processing resources from the shared processing resources to only the first processing volume of the first process chamber; and performing a process on the substrate in the first process chamber. | 11-03-2011 |
| 20120031876 | SYSTEMS, METHODS AND APPARATUS FOR SEPARATE PLASMA SOURCE CONTROL - A plasma source includes multiple ring plasma chambers, multiple primary windings, multiple ferrites and a control system. Each one of the primary windings is wrapped around an exterior one of the ring plasma chambers. Each one of the plurality of the ring plasma chamber passes through a respective portion of the plurality of ferrites. The control system is coupled to each of the ring plasma chambers. A system and method for generating and using a plasma are also described. | 02-09-2012 |
| 20120061350 | Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same - A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process. | 03-15-2012 |
| 20120091097 | Using Vacuum Ultra-Violet (VUV) Data in Radio Frequency (RF) Sources - The invention provide apparatus and methods for creating gate structures on a substrate in real-time using Vacuum Ultra-Violet (VUV) data and Electron Energy Distribution Function (EEDƒ) data and associated (VUV/EEDƒ)-related procedures in (VUV/EEDƒ) etch systems. The (VUV/EEDƒ)-related procedures can include multi-layer-multi-step processing sequences and (VUV/EEDƒ)-related models that can include Multi-Input/Multi-Output (MIMO) models. | 04-19-2012 |
| 20120152898 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING SYSTEM FOR PERFORMING THE SAME - In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material. | 06-21-2012 |
| 20120241410 | APPLICATION OF TREATMENT FLUIDS TO COMPONENTS - A process for treating a target region of a component surface with a treatment fluid including: a) determining an amount of treatment fluid required to treat the target region; b) feeding the determined amount of treatment fluid to a treatment device; c) continuously circulating the treatment fluid through an applicator of the treatment device whilst applying the applicator to the target region; and d) discarding the treatment fluid once the target region of the component surface has been treated. An apparatus for treating a target region of a component surface with a treatment fluid is also disclosed and which includes: a treatment fluid reservoir; a treatment device, operable to receive treatment fluid from the treatment fluid reservoir and to apply treatment fluid to the component; a holding fixture for supporting the component; and a sealable enclosure containing the treatment fluid reservoir, the treatment device and the holding fixture. | 09-27-2012 |
| 20130068726 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus | 03-21-2013 |
| 20130068727 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a stock unit, a processing unit, and an alignment chamber. The stock unit supplies and collects a conveyable tray formed with a plurality of housing holes in each of which a wafer is housed. In the processing chamber, plasma processing is executed on the wafers housed in the tray supplied from the stock unit. The alignment chamber is provided with a rotating table on which the tray before being subjected to the plasma processing is set to perform positioning of the wafers on the rotating table. A housing state determination unit of a control device determines whether or not the wafer is misaligned with respect the housing hole of the tray based on a height detected by height detecting sensors. | 03-21-2013 |
| 20130105442 | TEMPERATURE CONTROL WITH STACKED PROPORTIONING VALVE | 05-02-2013 |
| 20130119016 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a plasma processing chamber, a process monitor which monitors a condition in the plasma processing chamber, an actuator which controls a parameter constituting a plasma processing condition, N+1 correction amount calculating units which calculate a correction amount of a manipulated variable on the basis of a difference between a process monitor value monitored by the process monitor and a desired value of the process monitor and a correlation between the process monitor value and a manipulated variable, which is the parameter, the correlation having been acquired in advance, and N manipulated variable adding units that add a manipulated variable having a priority level next to an N-th manipulated variable. The N-th manipulated variable adding unit defines a correction amount calculated by the N+1-th correction amount calculating unit as the correction amount of an N+1-th manipulated variable. | 05-16-2013 |
| 20130153536 | COMBINATORIAL PROCESSING USING A REMOTE PLASMA SOURCE - Methods and apparatuses for combinatorial processing using a remote plasma source are disclosed. The apparatus includes a remote plasma source and an inner chamber enclosing a substrate support. An aperture is operable to provide plasma exposure to a site-isolated region on a substrate. A transport system moves the substrate support and is capable of positioning the substrate such that the site-isolated region can be located anywhere on the substrate. Barriers and a gas purge system operate to provide site-isolation. Plasma exposure parameters can be varied in a combinatorial manner. Such parameters include source gases for the plasma generator, plasma filtering parameters, exposure time, gas flow rate, frequency, plasma generator power, plasma generation method, chamber pressure, substrate temperature, distance between plasma source and substrate, substrate bias voltage, or combinations thereof. | 06-20-2013 |
| 20130193108 | METHODS OF END POINT DETECTION FOR SUBSTRATE FABRICATION PROCESSES - Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput. | 08-01-2013 |
| 20130240482 | METHODS AND APPARATUS FOR SELECTIVELY MODIFYING RF CURRENT PATHS IN A PLASMA PROCESSING SYSTEM - Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion. | 09-19-2013 |
| 20140034608 | METHOD AND APPARATUS FOR CONTROLLING THE SPATIAL TEMPERATURE DISTRIBUTION ACROSS THE SURFACE OF A WORKPIECE SUPPORT - A chuck for a plasma processor comprises a temperature-controlled base, a thermal insulator, a flat support, and a heater. The temperature-controlled base has a temperature below the desired temperature of a workpiece. The thermal insulator is disposed over the temperature-controlled base. The flat support holds a workpiece and is disposed over the thermal insulator. A heater is embedded within the flat support and/or disposed on an underside of the flat support. The heater includes a plurality of heating elements that heat a plurality of corresponding heating zones. The power supplied and/or temperature of each heating element is controlled independently. | 02-06-2014 |
| 20140034609 | Methods for Controlling Plasma Constituent Flux and Deposition During Semiconductor Fabrication and Apparatus for Implementing the Same - A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process. | 02-06-2014 |
| 20140299577 | APPARATUS AND METHOD FOR SURFACE PROCESSING OF A SUBSTRATE - The invention relates to an apparatus for surface processing on a substrate, for example for applying a coating to the substrate or for removing a coating from the substrate, wherein the apparatus comprises: a chamber enclosing an interior and serving for arranging the substrate for the surface processing, a process gas analyser for detecting at least one gaseous constituent of a residual gas atmosphere formed in the interior, wherein the process gas analyser comprises an ion trap for storing the gaseous constituent to be detected, and an ionization device for ionizing the gaseous constituent. The invention also relates to an associated method for monitoring surface processing on a substrate. | 10-09-2014 |
| 20150053644 | Methods for Selectively Modifying RF Current Paths in a Plasma Processing System - Methods and apparatus for modifying RF current path lengths are disclosed. Apparatus includes a plasma processing system having an RF power supply and a lower electrode having a conductive portion. There is included an insulative component disposed in an RF current path between the RF power supply and the conductive portion. There are included a plurality of RF path modifiers disposed within the insulative component, the plurality of RF path modifiers being disposed at different angular positions relative to a reference angle drawn from a center of the insulative component, whereby at least a first one of the plurality of RF path modifiers is electrically connected to the conductive portion and at least a second one of the plurality of the plurality of RF path modifiers is not electrically connected to the conductive portion. | 02-26-2015 |
| 20150325411 | DIRECTIONAL TREATMENT FOR MULTI-DIMENSIONAL DEVICE PROCESSING - Embodiments of the disclosure include apparatus and methods for modifying a surface of a substrate using a surface modification process. The process of modifying a surface of a substrate generally includes the alteration of a physical or chemical property and/or redistribution of a portion of an exposed material on the surface of the substrate by use of one or more energetic particle beams while the substrate is disposed within a particle beam modification apparatus. Embodiments of the disclosure also provide a surface modification process that includes one or more pre-modification processing steps and/or one or more post-modification processing steps that are all performed within one processing system. | 11-12-2015 |
| 20160020123 | DATA ANALYSIS METHOD FOR PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A stable etching process is realized at an earlier stage by specifying the combination of wavelength and time interval, which exhibits a minimum prediction error of etching processing result within a short period. For this, the combination of wavelength and time interval is generated from wavelength band of plasma emission generated upon etching of the specimen, the prediction error upon prediction of etching process result is calculated with respect to each combination of wavelength and time interval, the wavelength combination is specified based on the calculated prediction error, the prediction error is further calculated by changing the time interval with respect to the specified wavelength combination, and the combination of wavelength and time interval, which exhibits the minimum value of calculated prediction error is selected as the wavelength and the time interval used for predicting the etching processing process. | 01-21-2016 |
| 20160093468 | METHOD OF REDUCING THE THICKNESS OF A TARGET SAMPLE - A method is provided of reducing the thickness of a region of a target sample. Reference data is obtained that is representative of x-rays generated by a particle beam being directed upon part of a reference sample under a first set of beam conditions. Under a second set of beam conditions the particle beam is directed upon the region of the target sample. The resultant x-rays are monitored as monitored data. Output data are then calculated based upon the reference and the monitored data. Material is then removed from the region, so as to reduce its thickness, in accordance with the output data. | 03-31-2016 |
