| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 216062000 | Irradiating, ion implanting, alloying, diffusing, or chemically reacting the substrate prior to etching to change properties of substrate toward the etchant | 6 |
| 20130248489 | MICROSTRUCTURE MANUFACTURING METHOD - A microstructure manufacturing method includes (a) generating first light including an interference fringe by crossing two laser beams, (b) forming a denatured region and a non-denatured region on an object having thermal non-linearity by applying the first light onto the object, so that the denatured region and the non-denatured region are disposed so as to correspond to a period of the interference fringe of the first light, and (c) etching the object so that the denatured region or the non-denatured region is selectively eliminated. | 09-26-2013 |
| 20130256267 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a water removing step of removing water from a substrate, a silylating step of supplying a silylating agent to the substrate after the water removing step, and an etching step of supplying an etching agent to the substrate after the silylating step. The substrate may have a surface on which a nitride film and an oxide film are exposed and in this case, the etching step may be a selective etching step of selectively etching the nitride film by the etching agent. The etching agent may be supplied in a form of a vapor having an etching component. | 10-03-2013 |
| 20140263180 | APPARATUS AND METHODS FOR PULSED PHOTO-EXCITED DEPOSITION AND ETCH - Embodiments of the invention provide methods for processing a substrate within a processing chamber. In one embodiment, the method comprises providing a precursor gas mixture into the processing chamber, the precursor gas mixture comprising a deposition precursor gas and an etch precursor gas, subjecting the precursor gas mixture to a thermal energy from a heat source to deposit a material layer on a surface of the substrate, wherein the thermal energy is below the minimum required for pyrolysis of the etch precursor gas, and after the material layer is formed on the surface of the substrate, subjecting the precursor gas mixture to a photon energy from a radiation source, the photon energy having a wavelength and a power level selected to promote photolytic dissociation of the etch precursor gas over the deposition precursor gas and etch a portion of the material layer from the surface of the substrate. | 09-18-2014 |
| 20140360978 | METHOD OF MANUFACTURING A LIQUID EJECTION HEAD - Provided is a method of manufacturing a liquid ejection head including: a substrate having energy generating elements disposed thereon; and an ejection orifice forming member having ejection orifices, the substrate and the ejection orifice forming member forming a flow path therebetween, the method including: forming, on the substrate, a mold having a recessed portion at a position corresponding to a region in which each of the ejection orifices is formed and in a vicinity of the position; forming a coating layer by chemical vapor deposition so as to cover the mold; and forming the ejection orifices through the coating layer to obtain the ejection orifice forming member. | 12-11-2014 |
| 20150354060 | FILM FORMATION APPARATUS, FILM FORMATION METHOD, AND STORAGE MEDIUM - A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber. | 12-10-2015 |
| 20160060767 | Ion Implant Assisted Metal Etching - An improved method of etching a metal substrate is described. After a mask layer is applied to the metal substrate, an ion implantation process is performed which implants ions, such as oxygen ions, into the exposed regions of the metal substrate. This implantation creates regions of metal oxide, which may be more susceptible to etching. Afterwards, the exposed regions of metal oxide are subjected to an etching process. This process may be through vaporization or may be a wet etch process. In some embodiments, the etchant is selected so that the metal oxide binds with the etchant to form a volatile compound, which stays in the vapor or gaseous state. This may reduce the unwanted deposition of the metal to other surfaces. These ion implantation and etching processes may be repeated a plurality of times to create a recessed feature of the desired depth. | 03-03-2016 |
