| Entries |
| Document | Title | Date |
|---|
| 20080210379 | SUBSTRATE PROCESSING APPARATUS AND FOCUS RING - A substrate processing apparatus that can reliably improve the efficiency of heat transfer between a focus ring and a mounting stage. A housing chamber with the interior thereof evacuated houses a substrate. The substrate is mounted on a mounting stage that is disposed in the housing chamber. An annular focus ring is mounted on the mounting stage such as to surround a peripheral portion of the mounted substrate. A heat transfer film is formed on a surface of the focus ring which contacts the mounting stage by printing processing. | 09-04-2008 |
| 20080223524 | Semiconductor producing device and semiconductor device producing method - A tubular electrode ( | 09-18-2008 |
| 20080230180 | Processing Equipment for Object to be Processed - Processing equipment for an object to be processed is provided with a process container, the internal of which can be evacuated, a gas introducing means for introducing a prescribed gas into the process container, a supporting table provided in the process container, a ring-shaped supporting part provided on the supporting table for supporting the object to be processed, a plurality of thermoelectric conversion elements provided on an upper plane of the supporting table on an inner side of the supporting part, an element storing space evacuating means for evacuating inside the element storing space formed by a lower plane of the object to be treated, which is supported by the supporting part, an upper plane of the supporting table and the supporting part. | 09-25-2008 |
| 20080230181 | PLASMA PROCESSING APPARATUS AND STRUCTURE THEREIN - A structure, for use in a processing chamber of a plasma processing apparatus in which a plasma process is performed on a target substrate, includes a base member at least having a first surface and a second surface; and a thermally sprayed insulating film covering the first surface. Further, the structure includes an insulating protection member covering the second surface and made of a material having a linear expansion coefficient different from that of the base member; and a buffing surface covered with an insulating layer interposed between the thermally sprayed insulating film and the insulating protection member to prevent a contact therebetween. The thermally sprayed insulating film, the insulating protection member and the insulating layer constitute an insulating surface covering the first surface and the second surface. | 09-25-2008 |
| 20080236755 | Single-wafer type substrate processing apparatus having a carry-in port provided with first and second placement tables arranged in a line - A single-wafer type substrate processing apparatus includes: a plurality of process modules connected to a substrate transfer chamber; a carry-in port having a plurality of first placement tables arranged in a horizontal direction so that a substrate carrier is placed thereon; a second placement table installed on the left or right of an area where the first placement tables are arranged in the horizontal direction so that the substrate carrier is temporarily placed thereon; and a transfer mechanism transferring the substrate carrier from the second placement table to one of the first placement tables. When viewed in a direction perpendicular to the horizontal direction, an outer end of the second placement table in the horizontal direction is inside one of a maintenance area and a footprint area of the plurality of single-wafer type process modules as a whole, which one area is larger than the other in the horizontal direction. | 10-02-2008 |
| 20080289766 | Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup - An apparatus with an edge ring configured to surround a perimeter of a semiconductor wafer in a semiconductor process, the edge ring having a plurality of protrusions located on an upper surface of the edge ring, the protrusions capable of preventing the semiconductor wafer from moving outside the bounds of a process plane. There is also an apparatus having a semiconductor process chamber and an electrostatic chuck, a semiconductor wafer, and an edge ring. There is also a method including providing a semiconductor process chamber, semiconductor wafer disposed within the semiconductor process chamber, and an edge ring, the edge ring having a plurality of protrusions located on an upper surface of the edge ring, the protrusions capable of preventing the semiconductor wafer from moving outside the bounds of a process plane. The method also includes performing an etch process on the semiconductor wafer. | 11-27-2008 |
| 20080295965 | PLASMA PROCESSING APPARATUS - An inner medium passage | 12-04-2008 |
| 20080295966 | Electrode Assembly For The Removal Of Surface Oxides By Electron Attachment - An apparatus and a method comprising same for removing metal oxides from a substrate surface are disclosed herein. In one particular embodiment, the apparatus comprises an electrode assembly that has a housing that is at least partially comprised of an insulating material and having an internal volume and at least one fluid inlet that is in fluid communication with the internal volume; a conductive base connected to the housing comprising a plurality of conductive tips that extend therefrom into a target area and a plurality of perforations that extend therethrough and are in fluid communication with the internal volume to allow for a passage of a gas mixture comprising a reducing gas. | 12-04-2008 |
| 20090000744 | EDGE RING ARRANGEMENTS FOR SUBSTRATE PROCESSING - A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. | 01-01-2009 |
| 20090044911 | VACUUM PROCESSOR - A vacuum processor includes: a chamber; a pump which keeps the inside of the chamber in a vacuum state by; a connection part which connects the chamber with the pump and is formed with a gas passage therein. An inner wall of the connection part is provided with a capturing part capturing particles in the passage. The capturing part has a fibrous substance facing the passage and disposed along the passage. The fibrous substance is provided to capture particles. A peripheral part of the woven cloth of the fibrous substance is folded to a back side of the unwoven cloth and the front end of the peripheral part of the woven cloth is interfolded to the back side of the unwoven cloth. | 02-19-2009 |
| 20090050272 | DEPOSITION RING AND COVER RING TO EXTEND PROCESS COMPONENTS LIFE AND PERFORMANCE FOR PROCESS CHAMBERS - A deposing ring and cover ring for extending process components life and performance for process chambers are disclosed. A deposition ring including a protruding surface is positioned in spaced apart relation with a cover ring including a depressed surface. Indicated surfaces of the deposition ring and cover ring may be covered with a coating to improve adhesion of deposited materials. | 02-26-2009 |
| 20090101284 | Table for plasma processing apparatus and plasma processing apparatus - An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled. | 04-23-2009 |
| 20090120584 | COUNTER-BALANCED SUBSTRATE SUPPORT - A semiconductor processing system is described. The system includes a processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure. The system also includes a pumping system coupled to the chamber and adapted to remove material from the processing chamber. The system further includes a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the processing chamber is provided which is rigidly and sometimes rotatably coupled to the substrate support shaft. A motor coupled to the bracket can be actuated to vertically translate the substrate support pedestal, shaft and bracket from a first position to a second position closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force, where the tilting force is generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support. The counter-balancing force reduces the deflection of the bracket and the substrate support. | 05-14-2009 |
| 20090165956 | ELECTROSTATIC CHUCK AND APPARATUS FOR TREATING SUBSTRATE INCLUDING THE SAME - An electrostatic chuck for an apparatus for treating a substrate includes a body; an insulating plate attached onto a top surface of the body, wherein the substrate is disposed on the insulating plate; an electrode in the insulating plate; a temperature controlling unit including a heating unit and a cooling unit under the electrode and in the insulating plate; and a thermal conduction unit disposed between the electrode and the temperature controlling unit. | 07-02-2009 |
| 20090173446 | SUBSTRATE SUPPORT, SUBSTRATE PROCESSING APPARATUS INCLUDING SUBSTRATE SUPPORT, AND METHOD OF ALIGNING SUBSTRATE - The present invention relates to a substrate support that facilitates aligning a substrate and prevents the substrate from being damaged by arc discharge in processing a substrate using plasma, a substrate processing apparatus including the substrate support, and a method of aligning the substrate. A substrate support, which includes a main body on which a substrate is placed and a subsidiary body disposed around the side of the main body and having a slope declining from a position above the main body to the upper side of the main body, is provided, such that it is easy to align the substrate and it is possible to damage due to arc discharge in processing the substrate using plasma. | 07-09-2009 |
| 20090183835 | ETCHING PROCESS APPARATUS AND MEMBER FOR ETCHING PROCESS CHAMBER - It is an object of the present invention to provide an etching process apparatus which can suppress evolution of foreign matter to improve production yield. | 07-23-2009 |
| 20090199968 | Method and Apparatus for Electronic Device Manufacture Using Shadow Masks - Electronic devices are formed on a substrate that is advanced stepwise through a plurality of deposition vessels. Each deposition vessel includes a source of deposition material and has at least two shadow masks associated therewith. Each of the two masks is alternately positioned within the corresponding deposition vessel for patterning the deposition material onto the substrate through apertures in the mask positioned therein, and positioned in an adjacent cleaning vessel for mask cleaning. The patterning onto the substrate and the cleaning of at least one of the masks are performed concurrently. | 08-13-2009 |
| 20090229759 | ANNULAR ASSEMBLY FOR PLASMA PROCESSING, PLASMA PROCESSING APPARATUS, AND OUTER ANNULAR MEMBER - An annular assembly for plasma processing which can prevent poor attraction of a substrate. The annular assembly is comprised of a focus ring that is mounted on a mounting stage and disposed such as to surround an outer periphery of a substrate subjected to the plasma processing, and an outer annular member that is disposed such as to surround an outer periphery of the focus ring. The outer annular member has an exposed surface that is exposed into a processing space in which plasma is produced, and the exposed surface is covered with yttria. | 09-17-2009 |
| 20090294066 | Dry Etching Apparatus - A plasma etching and/or cleaning apparatus is disclosed. The apparatus includes a pedestal for mounting a wafer thereon, a quartz insulator having the pedestal therein, a ceramic top cover covering a portion of the quartz insulator that is exposed to plasma, and a lower pedestal supporting the quartz insulator. By simply covering the quartz insulator with a ceramic cover, a decrease in particles may be observed, and the lifetime of the quartz pedestal is increased. Therefore, maintenance and repair costs of the apparatus can be reduced, thereby enhancing operation efficiency. Furthermore, since the production of particles can be reduced, a more uniform etch rate can be obtained when etching the wafer, thereby enhancing the yield of the semiconductor device. In a further embodiment, the ceramic cover has an upper surface free of holes adapted to contain an alignment pin. | 12-03-2009 |
| 20090308538 | SUBSTRATE TEMPERATURE REGULATION FIXED APPARATUS - A substrate temperature regulation fixed apparatus has a base substance on which a vacuumed object is placed, an adhesive layer and a base plate. The base substance is fixed on the base plate through the adhesive layer. The adhesive layer contains a substance having plasma resistance. | 12-17-2009 |
| 20100032095 | SUBSTRATE PROCESSING APPARATUS - The processing device includes a processing chamber which receives the substrate, a depressurization mechanism which depressurizes the interior of the processing chamber, a stage which holds the substrate and is arranged in the processing chamber, a linear movement mechanism which linearly moves the stage and is arranged in the processing chamber, and a parallel link mechanism which prevents the rotation of the stage and is arranged in the processing chamber. A space portion isolated from the internal atmosphere of the processing chamber is formed in the stage. An air communication path that allows the space portion to communicate with the external atmosphere of the processing chamber is formed in the parallel link mechanism. | 02-11-2010 |
| 20100059181 | LOW SLOPED EDGE RING FOR PLASMA PROCESSING CHAMBER - Embodiments of a cover ring for use in a plasma processing chamber are provided. In one embodiment, a cover ring for use in a plasma processing chamber includes a ring-shaped body fabricated from a yttrium (Y) containing material. The body includes a bottom surface having an inner locating ring and an outer locating ring. The inner locating ring extends further from the body than the outer locating ring. The body includes an inner diameter wall having a main wall and a secondary wall separated by a substantially horizontal land. The body also includes a top surface having an outer sloped top surface meeting an inner sloped surface at an apex. The inner sloped surface defines an angle with a line perpendicular to a centerline of the body less than about 70 degrees. | 03-11-2010 |
| 20100065216 | RING ASSEMBLY FOR SUBSTRATE PROCESSING CHAMBER - An isolator ring is provided for a substrate support used in a substrate processing chamber. The substrate support comprises an annular ledge having a circumferential edge, and an inner perimeter sidewall. The isolator ring comprises an L-shaped dielectric ring comprising a laser textured surface; a horizontal leg capable of resting on the annular ledge of the support, and having a length that extends radially outward and stops short of the circumferential edge of the annular ledge; and a vertical leg abutting the inner perimeter sidewall of the support. A ring assembly includes the isolator ring and a deposition ring. | 03-18-2010 |
| 20100126669 | VACUUM TREATMENT APPARATUS - Provided is a vacuum treatment device capable of uniformly treating the whole of a substrate in a vacuum container. In the vacuum treatment device in which the substrate is placed and held in the recess of a substrate holder, the difference between the heights of the surface of the substrate holder and the surface of the substrate to be treated is set to be equal to or shorter than 0.2 mm, and the distance between the side surface of the substrate and the inner surface of the recess of the substrate holder is set to be equal to or shorter than 5 mm. | 05-27-2010 |
| 20100193131 | ASHING DEVICE - An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a processing chamber. The ashing device includes a path, which is formed in the processing chamber and through which active species supplied to the processing chamber pass. The path is defined by a surface on which the metal scattered from the substrate by the active species is collectible, with the surface being formed so as to expose a metal that is of the same kind. | 08-05-2010 |
| 20100193132 | MULTI-WORKPIECE PROCESSING CHAMBER AND WORKPIECE PROCESSING SYSTEM INCLUDING THE SAME - A multi-workpiece processing chamber according to the present invention comprises a chamber housing which forms at least two internal processing spaces therein; at least one partition member which is provided in the chamber housing and partitions the chamber housing into at least two internal processing spaces; and the respective internal processing spaces being coupled with the partition member and having a symmetric shape to generate a processing reaction uniformly. The multi-workpiece processing chamber according to the present invention has internal processing spaces that have a symmetric shape by being coupled with a partition member. Thus, a processing reaction uniformly occurs across the internal processing areas and reproducibility and uniformity of a workpiece processing process may improve. | 08-05-2010 |
| 20100206484 | TRAY, TRAY SUPPORT MEMBER, AND VACUUM PROCESSING APPARATUS - A chuck capable of holding a tray capable of holding a substrate in a predetermined position in a vacuum vessel includes a vertically movable frame, and an arm extending from the frame toward the tray and capable of supporting the tray. The arm includes a support portion which abuts against the tray, and a counterbore portion formed on that side of the support portion which faces the frame. This structure can reduce the warpage of the tray. | 08-19-2010 |
| 20100212834 | Plasma processing apparatus - A plasma processing apparatus for processing a subject placed on a subject stage disposed in a processing chamber in a vacuum vessel, by using plasma formed in said processing chamber, includes: an exhaust space communicating with the processing chamber, extending in a horizontal direction, and exhausting gas in the processing chamber; an exhaust port communicating with the exhaust space, the gas being exhausted via the exhaust port; a pump disposed communicating with the exhaust port and exhausting the gas; and a plate member disposed in the exhaust space between a connection portion to the processing chamber and the exhaust port, extending along a direction connecting the connection portion and the exhaust port, and disposed outside a view angle from an upper surface of the subject stage. | 08-26-2010 |
| 20100300623 | PLASMA ETCHING APPARATUS - According to one embodiment, a plasma etching apparatus includes an electrode to which a high-frequency voltage is applied, having an upper surface along which a processing target substrate is to be placed, and having an inclined side, and an electrode cover provided along the side of the electrode. | 12-02-2010 |
| 20110024047 | SUBSTRATE SUPPORT HAVING FLUID CHANNEL - A support for a substrate processing chamber comprises a chuck having a substrate receiving surface, and a base comprising an upper wall comprising a recessed trench having (i) an attachment face at a first depth, and (ii) a fluid channel at a second depth. A lower wall is seated in the recessed trench and attached to the attachment face of the upper wall, to close the fluid channel. A fluid inlet is provided to supply a heat transfer fluid to the fluid channel and a fluid outlet provided to discharge the heat transfer fluid from the fluid channel. | 02-03-2011 |
| 20110024048 | PLASMA PROCESSING APPARATUS - In a plasma oxidation processing apparatus ( | 02-03-2011 |
| 20110126984 | EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS - An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. | 06-02-2011 |
| 20110203736 | SURFACE ACTIVATION DEVICE - A surface activation device comprises a holding compartment, a nozzle support, and a sealing assembly. The holding compartment defines a receiving chamber and defining a plurality of recesses for holding workpieces therein. The nozzle support is rotatably received in the receiving chamber and comprises an outer barrel, an inner barrel is received in the outer barrel, and at least one ultraviolet (UV) lamp is embedded in the outer barrel. The outer barrel and the inner barrel cooperatively define a first chamber therebetween, and the inner barrel defines a second chamber therein. The sealing assembly seals the first chamber and the second chamber, and comprises at least one first inlet tube communicated with the first chamber and at least one second inlet tube communicated with the second chamber. | 08-25-2011 |
| 20110232847 | QUARTZ GLASS MEMBER FOR PLASMA ETCHING - Provided is a doped quartz glass member for plasma etching, which is used in a plasma etching process and is free from any problematic fluoride accumulation during use. The quartz glass member for plasma etching is used as a jig for semiconductor production in a plasma etching process, and includes at least two or more kinds of metal elements in a total amount of 0.01 wt % or more to less than 0.1 wt %, in which the metal elements are formed of at least one kind of a first metal element selected from metal elements belonging to Group 3B of the periodic table and at least one kind of a second metal element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, Ti, Zr, Hf, lanthanoids, and actinoids. | 09-29-2011 |
| 20110277934 | METHODS OF SELECTIVELY DEPOSITING AN EPITAXIAL LAYER - Apparatus for selectively depositing an epitaxial layer are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein; a deposition gas source coupled to the process chamber; an etching gas source coupled to the process chamber, the etching gas source including a hydrogen and halogen gas source and a germanium gas source; an energy control source to maintain the substrate at a temperature at up to 600 degrees Celsius; and an exhaust system coupled to the process chamber to control the pressure in the process chamber. | 11-17-2011 |
| 20110297321 | SUBSTRATE SUPPORT STAGE OF PLASMA PROCESSING APPARATUS - An object is to provide a substrate support stage of a plasma processing apparatus, in which electrical discharge from a connection terminal is prevented with a simple structure. In the substrate support stage of a plasma processing apparatus, an electrostatic attraction plate ( | 12-08-2011 |
| 20120006491 | PLASMA TEXTURING APPARATUS FOR SOLAR CELL - A plasma texturing apparatus for a solar cell includes a susceptor having engagement projections to prevent a wafer mounted therein from slipping outward or fluctuating back and forth when aligning the wafer over a cathode for plasma texturing; a focus ring functioning to confine plasma when conducting a plasma texturing process; and a clamp placed on an inner surface of the focus ring in such a way as to have a downward slope, and having one end which is coupled to the focus ring and the other end which faces away from the one end, is formed to be pointed and functions to squeeze and support peripheral portions of the wafer. | 01-12-2012 |
| 20120006492 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 01-12-2012 |
| 20120037316 | METHOD OF SUPPLYING ETCHING GAS AND ETCHING APPARATUS - A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container. | 02-16-2012 |
| 20120103526 | HIGH PURITY ALUMINUM COATING HARD ANODIZATION - The disclosure relates to a chamber component or a method for fabricating a chamber component for use in a plasma processing chamber apparatus. The chamber component includes a polished high purity aluminum coating and a hard anodized coating that is resistive to the plasma processing environment. | 05-03-2012 |
| 20120211166 | ION SOURCES AND METHODS FOR GENERATING AN ION BEAM WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTION - Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber. | 08-23-2012 |
| 20120216955 | PLASMA PROCESSING APPARATUS - According to one embodiment, a plasma processing apparatus that includes a process target holding portion and a plasma generating unit in a chamber, and processes a process target by using generated plasma is provided. An yttrium oxide film is formed on an inner wall of the chamber and a surface of a structural member in the chamber on a generation region side of the plasma. The yttrium oxide film includes yttrium oxide particles, has a film thickness of 10 μm or more and 200 μm or less, has a film density of 90% or more, and is such that yttrium oxide particles, which are present in a unit area 20 μm×20 μm and whose grain boundary is confirmable, are 0 to 80% in area ratio. | 08-30-2012 |
| 20130008608 | PLASMA PROCESSING APPARATUS - The plasma processing apparatus includes a processing container, a gas supplying unit, an introducing unit, a holding member, and a focus ring. In a processing space defined by the processing container, plasma of a processing gas supplied from the gas supplying unit is generated by energy introduced from the introducing unit. The holding member for holding an object to be processed and a focus ring formed to surround a cross-section of the holding member are disposed in the processing space. A gap equal to or less than 350 μm is defined between the cross-section of the holding member and the focus ring. | 01-10-2013 |
| 20130008609 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a first electrode and a second electrode disposed to face each other, a high frequency power supply unit for applying a high frequency power to either the first electrode or the second electrode, a processing gas supply unit for supplying a processing gas to a processing space, and a main dielectric member provided at a substrate mounting portion on a main surface of the first electrode. A focus ring is attached to the first electrode to cover a peripheral portion of the main surface of the first electrode and a peripheral dielectric member is provided in a peripheral portion on the main surface of the first electrode so that an electrostatic capacitance per unit area applied between the first electrode and the focus ring is smaller than that applied between the first electrode and the substrate by the main dielectric member. | 01-10-2013 |
| 20130025790 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided are a plasma processing apparatus and a plasma processing method, by which plasma damage is reduced during processing. At the time of performing desired plasma processing to a substrate ( | 01-31-2013 |
| 20130133834 | Plasma Processing Chamber With Flexible Symmetric RF Return Strap - Chambers for processing semiconductor wafers are provided. One such chamber includes an electrostatic chuck having a surface for supporting a substrate. A ground assembly is provided that surrounds a periphery of the electrostatic chuck. The ground assembly includes a first annular part and a second annular part and a space between the first annular part and the second annular part. A conductive strap having flexibility is provided. The conductive strap is annular and has a curved cross-sectional shape with a first end and a second end. The conductive strap is disposed in the space such that the first is electrically connected to the first annular part and the second end is electrically connected to the second annular part. The curved cross-sectional shape has an opening that faces away from the electrostatic chuck when the annular conductive strap is in the space. | 05-30-2013 |
| 20130153149 | Substrate Processing Tool with Tunable Fluid Flow - Embodiments provided herein describe substrate processing tools. The substrate processing tools include a housing defining a processing chamber. A substrate support is coupled to the housing and configured to support a substrate within the processing chamber. The substrate has a central axis. A first annular member is moveably coupled to the housing and positioned within the processing chamber. The first annular member circumscribes the central axis of the substrate. A second annular member is moveably coupled to the housing and positioned within the processing chamber. The second annular member circumscribes the central axis of the substrate. Movement of the first annular member and the second annular member relative to the housing changes a flow of processing fluid through the processing chamber. | 06-20-2013 |
| 20130168020 | ETCHING DEVICE AND FOCUS RING - An etching device includes a treatment target holding device holding a treatment target and a plasma generation device, etching the treatment target using generated plasma. The treatment target holding device includes a treatment target supporting member on which the treatment target is mounted, a ring-shaped focus ring that has a step part in a predetermined position, and a protective film containing yttria. The treatment target supporting member has a positioning pin that fixes the focus ring on a focus ring mounting region, the focus ring has a cavity part in a position corresponding to the positioning pin. The protective film is formed on a bottom surface and a side surface that configure the step part and on an upper surface of the focus ring corresponding to a formation position of the cavity part. | 07-04-2013 |
| 20130180662 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus having a processing chamber, a sample stage, a sample, a dielectric-composed insulating film and an electrode, the sample stage can be divided into an upper member and a lower member, the upper member including the insulating film and an electrode, the apparatus includes a socket which is deployed inside a through hole of the upper member, and which is electrically connected to the electrode, a pin which is brought into contact with the socket by being inserted into the socket, and a seal member which is attached onto the socket in order to implement a hermetic sealing between the upper-member side and the lower-member side inside the through hole, the upper-member side being continuously linked to the decompressed processing chamber, the lower-member side being continuously linked to the substantially-atmospheric-pressure side which is the outside of the processing chamber. | 07-18-2013 |
| 20130220550 | PLASMA BOUNDARY LIMITER UNIT AND APPARATUS FOR TREATING SUBSTRATE - Provided is an apparatus for treating a substrate. The apparatus comprises a plasma boundary limiter unit disposed within a process chamber to surround a discharge space defined above a support unit. The plasma boundary limiter unit comprises a plurality of plates disposed along a circumference of the discharge space, and the plurality of plates are spaced apart from each other along the circumference of the discharge space so that a gas within the discharge space flows to the outside of the discharge space through passages provided between the adjacent plates. | 08-29-2013 |
| 20130233491 | DRY ETCHING APPARATUS - A dry etching apparatus is disclosed, which is capable of forming a uniform pattern in a substrate surface, the dry etching apparatus for etching at least one substrate through the use of plasma, comprising the at least one substrate placed on a tray inside a chamber; a susceptor, provided inside the chamber while confronting with the at least one substrate, for supplying a high-frequency power to form the plasma; a grounding part provided beneath the susceptor while being untouchable to the susceptor; and an insulating part provided between the susceptor and the grounding part. | 09-12-2013 |
| 20130269877 | SEMICONDUCTOR PROCESSING APPARATUS - A semiconductor processing apparatus includes a wafer supporting unit for supporting a wafer and a wafer holder positioned outside of the wafer supporting unit. The wafer holder further includes a plurality of horizontal parts extending axially around the wafer supporting unit and a plurality of vertical parts vertically extending from the horizontal parts respectively. Topmost surfaces of the vertical parts and a topmost surface of the wafer supporting unit are non-coplanar. | 10-17-2013 |
| 20130276985 | Methods of Processing Semiconductor Substrates, Electrostatic Carriers for Retaining Substrates for Processing, and Assemblies Comprising Electrostatic Carriers Having Substrates Electrostatically Bonded Thereto - A method of processing a substrate includes physically contacting an exposed conductive electrode of an electrostatic carrier with a conductor to electrostatically bond a substrate to the electrostatic carrier. The conductor is removed from physically contacting the exposed conductive electrode. Dielectric material is applied over the conductive electrode. The substrate is treated while it is electrostatically bonded to the electrostatic carrier. In one embodiment, a conductor is forced through dielectric material that is received over a conductive electrode of an electrostatic carrier to physically contact the conductor with the conductive electrode to electrostatically bond a substrate to the electrostatic carrier. After removing the conductor from the dielectric material, the substrate is treated while it is electrostatically bonded to the electrostatic carrier. Electrostatic carriers for retaining substrates for processing, and such assemblies, are also disclosed. | 10-24-2013 |
| 20130284374 | HIGH TEMPERATURE ELECTROSTATIC CHUCK WITH REAL-TIME HEAT ZONE REGULATING CAPABILITY - Embodiments of the present invention provide electrostatic chucks for operating at elevated temperatures. One embodiment of the present invention provides a dielectric chuck body for an electrostatic chuck. The dielectric chuck body includes a substrate supporting plate having a top surface for receiving a substrate and a back surface opposing the top surface, an electrode embedded in the substrate supporting plate, and a shaft having a first end attached to the back surface of the substrate supporting plate and a second end opposing the first end. The second end is configured to contact a cooling base and provide temperature control to the substrate supporting plate. The shaft is hollow having a sidewall enclosing a central opening, and two or more channels formed through the sidewall and extending from the first end to the second end. | 10-31-2013 |
| 20130284375 | CONSUMABLE PART FOR USE IN A PLASMA PROCESSING APPARATUS - A method of reusing a consumable part for use in a plasma processing apparatus includes cleaning a surface of the consumable part made of SiC that has been eroded by a first plasma process performed for a specific period of time. The method further includes depositing SiC on the cleaned surface of the eroded consumable part by CVD. The method also includes remanufacturing a consumable part having a predetermined shape by machining the eroded consumable part on which the SiC is deposited for performing a second plasma process on a substrate by using the remanufactured consumable part. | 10-31-2013 |
| 20130340942 | EDGE SEAL FOR LOWER ELECTRODE ASSEMBLY - A lower electrode assembly useful for supporting a semiconductor substrate in a plasma processing chamber includes a temperature controlled lower base plate, an upper plate, a mounting groove surrounding a bond layer and an edge seal comprising an elastomeric band having an outer concave surface in an uncompressed state, the band mounted in the groove such that upper and lower ends of the band are axially compressed and a maximum outward bulging of the band is no greater than a predetermined distance. | 12-26-2013 |
| 20140014270 | GAS MIXING APPARATUS - Embodiments of gas mixing apparatus are provided herein. In some embodiments, a gas mixing apparatus may include a container defining an interior volume, the container having a closed top and bottom and a sidewall having a circular cross section with respect to a central axis of the container passing through the top and bottom; a plurality of first inlets coupled to the container proximate the top of the container to provide a plurality of process gases to the interior volume of the container, the plurality of first inlets disposed such that a flow path of the plurality of process gases through the plurality of first inlets is substantially tangential to the sidewall of the container; and an outlet coupled to the container proximate the bottom of the container to allow the plurality of process gases to be removed from the interior volume of the container. | 01-16-2014 |
| 20140034242 | EDGE RING ASSEMBLY FOR PLASMA PROCESSING CHAMBER AND METHOD OF MANUFACTURE THEREOF - A two piece edge ring assembly is configured to surround a semiconductor substrate in a plasma processing chamber wherein plasma is generated and used to process the semiconductor substrate. The edge ring assembly comprises upper and lower rings which have an outer protective coating. The upper and lower rings are configured such that the upper ring is supported on an outer portion of the upper surface of the lower ring and the protective coatings are on plasma exposed surfaces of the upper and lower rings. | 02-06-2014 |
| 20140034243 | APPARATUS FOR PLASMA PROCESSING SYSTEM WITH TUNABLE CAPACITANCE - A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The substrate is disposed above a chuck and surrounded by an edge ring, which is electrically isolated from the chuck. The system includes a RF power, which provides power to the chuck. The system also includes a tunable capacitance arrangement, which is coupled to the edge ring to provide RF coupling to the edge ring, resulting in the edge ring having an edge ring potential. The system further includes the plasma processing chamber configured to strike plasma to process the substrate, which is processed while the tunable capacitance arrangement is configured to cause the edge ring potential to be dynamically tunable to a DC potential of the substrate while processing the substrate. | 02-06-2014 |
| 20140096908 | DISTRIBUTED MULTI-ZONE PLASMA SOURCE SYSTEMS, METHODS AND APPARATUS - A processing chamber including multiple plasma sources in a process chamber top. Each one of the plasma sources is a ring plasma source including a primary winding and multiple ferrites. A plasma processing system is also described. A method of plasma processing is also described. | 04-10-2014 |
| 20140116622 | ELECTROSTATIC CHUCK AND SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus using plasma. The apparatus includes a chamber having a processing space therein, a substrate supporting assembly located in the chamber and including an electrostatic chuck supporting a substrate, a gas supplying unit supplying gases into the chamber, and a power source applying power for generating plasma from the gases supplied into the chamber. The electrostatic chuck includes a dielectric plate including an electrode adsorbing the substrate by using an electrostatic force, a body located below the dielectric plate and including a metallic plate to which a high frequency power source is connected, and a bonding unit located between the dielectric plate and the body and fastening the dielectric plate and the body. The bonding unit is formed as a multilayer structure. | 05-01-2014 |
| 20140116623 | ETCHING TREATMENT APPARATUS - Disclosed is an etching treatment apparatus. The etching treatment apparatus includes a crucible to receive a wafer, a wafer jig part having a groove into which the wafer is seated, and a size adjusting part inserted into the groove while making contact with the edge of the wafer. | 05-01-2014 |
| 20140190636 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a processing chamber for processing a substrate, a shield at an inner wall of the processing chamber, and a connector attaching the shield to the inner wall of the processing chamber. The connector includes a groove and a protrusion respectively on opposing surfaces of the inner wall of the processing chamber and the shield. | 07-10-2014 |
| 20140202635 | MOUNTING TABLE AND PLASMA PROCESSING APPARATUS - A mounting table includes an electrostatic chuck having a mounting surface and a backside opposite to the mounting surface, a first through hole being formed in the mounting table; a base joined to the backside of the electrostatic chuck and having a second through hole in communication with the first through hole; a lifter pin which is received in a pin hole formed by the first through hole and the second through hole, the lifter pin being movable up and down to protrude beyond and retract below the mounting surface. An upper end portion of the lifter pin has a shape in which a diameter decreases toward a lower end of the lifter pin to correspond to a shape of the upper end portion of the pin hole. The upper end portion of the lifter pin is in surface contact with the upper end portion of the pin hole. | 07-24-2014 |
| 20140231018 | PLASMA PROCESSING APPARATUS - In one aspect there is provided a plasma processing apparatus including a substrate placing unit configured to be placed a substrate to be processed, and an upper electrode opposed to the substrate placing unit, wherein an outer portion of a main surface of the upper electrode opposed to the substrate placing unit has a mirror surface. | 08-21-2014 |
| 20140231019 | SUSCEPTOR - A susceptor | 08-21-2014 |
| 20140251542 | WAFER SUSCEPTOR FOR FORMING A SEMICONDUCTOR DEVICE AND METHOD THEREFOR - In one embodiment, a wafer susceptor is formed to have portion of the susceptor that is positioned between a wafer pocket and an outside edge of the susceptor to have a non-uniform and/or a non-planar surface. In another embodiment, the non-uniform and/or non-planar surface includes one of a recess into the surface or a protrusion extending away from the surface. | 09-11-2014 |
| 20140290862 | POWER SUPPLY DEVICE AND VACUUM PROCESSING APPARATUS USING THE SAME - A power supply device supplies power to a substrate holder having a plurality of electrodes. The device includes a first fixed conductive member, a second fixed conductive member, a fixed insulating member fixed to an insulating housing portion and configured to insulate the first fixed conductive member from the second fixed conductive member, a first rotation conductive member, a second rotation conductive member, a rotation insulating member fixed to an insulating column portion and configured to insulate the first rotation conductive member from the second rotation conductive member, a first power supply member configured to supply a first voltage to the substrate holder via the first rotation conductive member and the first fixed conductive member, and a second power supply member configured to supply a second voltage to the substrate holder via the second rotation conductive member and the second fixed conductive member. | 10-02-2014 |
| 20140311676 | SUBSTRATE MOUNTING TABLE AND PLASMA TREATMENT DEVICE - A substrate mounting table ( | 10-23-2014 |
| 20140367047 | EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS - An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring. | 12-18-2014 |
| 20150007941 | BIASING SYSTEM FOR A PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a process chamber housing defining a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate plasma in the process chamber, and a biasing system. The biasing system is configured to bias the platen with a negatively biased DC signal to attract ions from the plasma towards the workpiece during a first processing time interval and configured to bias the platen with a positively biased DC signal to repel ions from the platen towards interior surfaces of the process chamber housing during a cleaning time interval. The cleaning time interval is separate from the first processing time interval and occurs after the first processing time interval. | 01-08-2015 |
| 20150059980 | PLASMA PROCESSING APPARATUS - In plasma processing, damage on a cover is prevented while thermal effect on an annular frame is suppressed. Plasma processing is applied to a substrate held by a carrier including an annular frame and a holding sheet. There are provided a chamber having a decompressible internal space, a plasma source for generating plasma in the chamber, a stage that is provided in the chamber and places the carrier thereon, and a cover that is placed above the stage to cover the holding sheet and the frame, and has a window penetrating through the thickness of the cover. The cover is made of a material having a high thermal conductivity, and a front face exposed to plasma, at least on the side of the window of the cover, is covered with a protect part made of a material having a low reactivity with plasma. | 03-05-2015 |
| 20150083332 | PLASMA PROCESSOR AND PLASMA PROCESSING METHOD - An etching chamber | 03-26-2015 |
| 20150348814 | ELECTROSTATIC CHUCK AND SEMICONDUCTOR-LIQUID CRYSTAL MANUFACTURING APPARATUS - An electrostatic chuck includes a base plate including a penetration hole, a cylindrical insulating component inserted in the penetration hole, the cylindrical insulating component including a protruding portion protruding from an upper end of the penetration hole, a placing table arranged on the base plate, a dent portion formed in a lower face of the placing table, the dent portion in which the protruding portion of the cylindrical insulating component is fitted, a concave portion formed in the dent portion of the placing table, an electrode formed in the concave portion of the placing table, and a power feeding terminal arranged in an inner part of the cylindrical insulating component, the power feeding terminal connected to the electrode. | 12-03-2015 |
| 20150364347 | DIRECT LIFT PROCESS APPARATUS - The present disclosure provides a substrate support assembly includes a substrate pedestal having an upper surface for receiving and supporting a substrate, a cover plate disposed on the substrate support pedestal, and two or more lift pins movably disposed through the substrate support pedestal and the cover plate. The cover plate includes a disk body having a central opening. The two or more lift pins are self supportive. Each of the two or more lift pins comprises one or more contact pads, and the contact pads of the lift pins extend into to the central opening of the cover plate to receive and support a substrate at an edge region of the substrate. | 12-17-2015 |
| 20150371878 | Method and Apparatus for Plasma Dicing a Semi-conductor Wafer - The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a cover ring disposed above the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma. | 12-24-2015 |
| 20160035543 | PLASMA PROCESSING APPARATUS - There is provided a plasma processing apparatus including a focus ring capable of preventing a part of a heat transfer sheet from adhering to and remaining on a mounting table. The plasma processing apparatus comprises: a chamber for performing a plasma process on a target object; a mounting table configured to mount thereon the target object; and a focus ring configured to surround the target object, the focus ring being in contact with the mounting table via a flexible heat transfer sheet. Further, the heat transfer sheet has a contact surface in contact with the mounting table and an anti-adhesion layer formed on the contact surface, and the anti-adhesion layer is located between said contact surface of the heat transfer sheet and a mounting surface of the mounting table. Furthermore, the anti-adhesion layer contains heat conductive particulates, and the heat transfer sheet is formed in an annular shape. | 02-04-2016 |
| 20160079107 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket. | 03-17-2016 |
| 20160118224 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus is provided that is configured to supply a gas into a chamber, generate a plasma from the gas using a power of an electromagnetic wave, and perform a predetermined plasma process on a substrate that is held by a mounting table. The plasma processing apparatus includes a dielectric window through which the electromagnetic wave that is output from an electromagnetic wave generator is propagated and transmitted into the chamber, a support member that supports the dielectric window, a partition member that separates a space where the support member is arranged from a plasma generation space and includes a protrusion abutting against the dielectric window, and a conductive member that is arranged between the partition member and the dielectric window and is protected from being exposed to the plasma generation space by the protrusion. | 04-28-2016 |
| 20160126114 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a processing chamber, a table disposed in the processing chamber, a dielectric window provided at the processing chamber, and a surrounding body made of a dielectric material surrounding a processing space between the table and the dielectric window. The dielectric window and the surrounding body are separated from each other in a vertical direction with a predetermined gap therebetween. | 05-05-2016 |
| 20160167167 | BLANK ETCHING FIXTURE | 06-16-2016 |
| 20160189934 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus that processes a substrate by converting a processing gas into plasma. A plurality of rotatable substrate stages are provided at a lower side within a processing container. An upper electrode is provided at an upper side within the processing container. The upper electrode is supplied with a high frequency wave from a high frequency power source to convert a processing gas supplied into the processing container into plasma. The upper electrode is rotatable about a vertical portion of an electrode support member by a driving mechanism and a rotary mechanism. | 06-30-2016 |
