| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345520 | With means to heat the workpiece support | 25 |
| 20080308230 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus | 12-18-2008 |
| 20090095425 | APPARATUS FOR THE FORMATION OF A METAL FILM - An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel. | 04-16-2009 |
| 20090194238 | PLASMA PROCESSING APPARATUS - Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus | 08-06-2009 |
| 20090277588 | Semiconductor producing device and semiconductor device producing method - A tubular electrode ( | 11-12-2009 |
| 20100032096 | Apparatus for Holding Semiconductor Wafers - Apparatus for holding semiconductor wafers during semiconductor manufacturing processes are disclosed. In one embodiment, the apparatus comprises a heat-conductive layer disposed on a supporting base. The apparatus also comprises a plurality of holes formed through the heat-conductive layer and the supporting base. The apparatus further comprises a plurality of heat-conductive lift pins that extend through the holes over the heat-conductive layer at the top end, and make a direct contact with a wafer substrate. The heat-conductive layer and the lift pins are connected to a heating circuit. | 02-11-2010 |
| 20100059182 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a chamber having a reaction space therein, a substrate seating member disposed in the reaction space of the chamber to seat a substrate thereon, an induction heating unit to heat the substrate seating member, and at least one altitude adjusting unit to selectively adjust the altitude of the induction heating unit at the outside of the chamber according to a temperature adjusting region of the substrate seating member. Therefore, it is possible to constantly control a temperature of the substrate seating member by adjusting the distance length between the substrate seating member and the induction heating unit at the outside of the chamber. | 03-11-2010 |
| 20100122774 | SUBSTRATE MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS HAVING SAME - A substrate mounting table includes a mounting table main body, a mounting unit provided at an upper portion of the mounting table main body, a heat source transferring a (cold) heat to the upper portion of the mounting table main body, and a heat transfer control part. The heat transfer control part includes a cavity portion provided in the mounting table main body to correspond to the mounted substrate, and a solid member filled in the cavity portion and having pores communicating with one another. The heat transfer control part controls a heat transfer level from the heat source by supplying or exhausting a heat transfer gas to or from the cavity portion. A controller controls the supplying and the exhausting of the heat transfer gas to and from the cavity portion by a heat transfer gas supply unit and a heat transfer gas exhaust unit, respectively. | 05-20-2010 |
| 20100163188 | MOUNTING TABLE STRUCTURE AND PROCESSING APPARATUS - A mounting table structure | 07-01-2010 |
| 20110005686 | LOADING TABLE STRUCTURE AND PROCESSING DEVICE - A loading table structure which is adapted, in order to prevent damage to the loading table, so that large thermal stress does not occur in the loading table and so that the amount of supply of a purge gas for corrosion prevention to the loading table is minimized. The loading table structure is formed in a processing container capable of discharging gas contained therein and is used to load thereon an object to be processed. The loading table structure is provided with a loading table on which the object to be processed is loaded and which consists of a dielectric, a heating means which is provided to the loading table and which heats the object to be processed loaded on the loading table, and protective strut tubes which are mounted so as to vertically rise from the bottom section of the processing container, which have upper ends joined to the lower surface of the loading table to support the loading table, and which consist of a dielectric. A functional bar extending up to the loading table is inserted into each protective strut tube. | 01-13-2011 |
| 20120000610 | Microwave Plasma Processing Apparatus - In accordance with example embodiments, a plasma processing apparatus includes a chamber configured to perform a plasma process, an upper plate on the chamber, an antenna under the upper plate and the antenna is configured to generate plasma in the chamber, an upper insulator between the upper plate and the antenna and the upper insulator covers a top of the antenna, a lower insulator covering a bottom of the antenna, an antenna support ring configured to fix the antenna to the upper plate, and a metal gasket adhered to the antenna support ring. | 01-05-2012 |
| 20120006493 | HEATING AND COOLING OF SUBSTRATE SUPPORT - A process chamber and a method for controlling the temperature of a substrate positioned on a substrate support assembly within the process chamber are provided. The substrate support assembly includes a thermally conductive body, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, and two or more cooling channels embedded within the thermally conductive body to be coplanar with the one or more heating elements. The cooling channels may be branched into two or more equal-length cooling passages being extended from a single point inlet and into a single point outlet to provide equal resistance cooling. | 01-12-2012 |
| 20120160419 | SUBSTRATE-SUPPORTING UNIT AND SUBSTRATE-PROCESSING APPARATUS COMPRISING SAME - A substrate-supporting unit includes: a mounting board on which a substrate is disposed; and a heater installed in the mounting board to heat the substrate disposed on the mounting board, wherein the mounting board includes: a non-contact surface which faces a center portion of the substrate and is spaced apart from the center portion of the substrate; and a contact member which extends outward from the non-contact surface and is arranged along an edge portion of the substrate disposed on the mounting board to support the edge portion of the substrate. | 06-28-2012 |
| 20130105088 | THERMAL MANAGEMENT OF EDGE RING IN SEMICONDUCTOR PROCESSING | 05-02-2013 |
| 20140069585 | PLASMA ETCHING APPARATUS - Disclosed is a plasma etching apparatus which includes: a base formed of a metal that has a lower expansion coefficient than aluminum; an electrostatic chuck disposed on a mounting surface of the base and configured to mount an object to be processed; a bonding layer which bonds the base to the electrostatic chuck; and a heater provided within the electrostatic chuck. In the plasma etching apparatus, the base is provided with a metal portion that is formed through a cold spraying by using a metal that has a higher thermal conductivity than the metal for forming the base. | 03-13-2014 |
| 20140096909 | HEATING PLATE WITH PLANAR HEATER ZONES FOR SEMICONDUCTOR PROCESSING - A heating plate of a semiconductor substrate support for supporting a semiconductor substrate in a plasma processing chamber includes a first layer with an array of heater zones operable to tune a spatial temperature profile on the semiconductor substrate, and a second layer with one or more primary heaters to provide mean temperature control of the semiconductor substrate. The heating plate can be incorporated in a substrate support wherein a switching device independently supplies power to each one of the heater zones to provide time-averaged power to each of the heater zones by time divisional multiplexing of the switches. | 04-10-2014 |
| 20140110061 | PLASMA PROCESSING APPARATUS - In a plasma processing apparatus, a heating element | 04-24-2014 |
| 20140290863 | CERAMIC MEMBER, MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD FOR MANUFACTURING CERAMIC MEMBER - A ceramic member | 10-02-2014 |
| 20150059981 | HOT WALL REACTOR WITH COOLED VACUUM CONTAINMENT - Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing substrates includes a chamber body enclosing a processing volume, the chamber body comprising a chamber floor, a chamber wall coupled to the chamber floor, and a chamber lid removably coupled to the chamber wall, wherein at least one of the chamber floor, the chamber wall, and the chamber lid comprise passages for a flow of a thermal control media; a heater plate disposed adjacent to and spaced apart from the chamber floor; a sleeve disposed adjacent to and spaced apart from the chamber wall, the sleeve supported by the heater plate; and a first sealing element disposed at a first interface between the chamber wall and the chamber lid. | 03-05-2015 |
| 20150101755 | SUBSTRATE PROCESSING APPARATUS - An insulating film having features such as a low dielectric constant, a low etching rate and a high insulating property is formed. An oxycarbonitride film is formed on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a gas containing an element to the substrate; (b) supplying a carbon-containing gas to the substrate; (c) supplying a nitrogen-containing gas to the substrate; and (d) supplying an oxygen-containing gas to the substrate. | 04-16-2015 |
| 20150114567 | FOCUS RING AND PLASMA PROCESSING APPARATUS - A focus ring to be detachably attached to a top surface of an outer peripheral portion of a mounting table in a processing chamber, includes: an annular main body having a back surface to be attached to the top surface of the outer peripheral portion of the mounting table. And a thermally conductive sheet fixed to the annular main body, the thermally conductive sheet being interposed between the annular main body and the top surface of the outer peripheral portion of the mounting. The thermally conductive sheet is fixed as one unit to the annular main body by coating an unvulcanized rubber on one surface of the thermally conductive sheet, bringing said one surface into contact with the annular main body, and heating the thermally conductive sheet and the annular main body to vulcanize and to adhere the thermally conductive sheet to the annular main body. | 04-30-2015 |
| 20150129134 | PLACEMENT TABLE AND PLASMA PROCESSING APPARATUS - A placement table includes: a base; an electrostatic chuck disposed on the base and including a placement surface on which a workpiece is placed; a plurality of heat generating members disposed at a side opposite to the placement surface of the electrostatic chuck; a power supply configured to generate a current for causing each of the plurality of heat generating members to generate heat; a plurality of electric wires installed to extend in a direction crossing the placement surface from the plurality of heat generating members, respectively, and configured to connect the power supply with the heat generating members, respectively; and a filter mounted on each of the plurality of electric wires to remove a high frequency component having a frequency higher than that of the current generated by the power supply. | 05-14-2015 |
| 20150364355 | SAMPLE HOLDER AND PLASMA ETCHING APPARATUS USING SAME - A sample holder includes a substrate composed of ceramics, having a sample holding surface on one main surface thereof; and a heat-generating resistor provided on an other main surface of the substrate, containing a glass component. The substrate contains the glass component in a vicinity region of the heat-generating resistor. | 12-17-2015 |
| 20150373783 | PLACING TABLE AND PLASMA PROCESSING APPARATUS - Provided is a placing table configured to place a workpiece thereon. The placing table includes: an electrostatic chuck configured to attract the workpiece; a support member configured to support a focus ring; and a metal base having a first region configured to support the electrostatic chuck and a second region configured to support the support member, the second region surrounding the first region. The support member includes: an intermediate layer formed of a ceramic sintered compact and supported on the second region via an adhesive; a thermally sprayed ceramic layer formed on the intermediate layer by a thermal spraying method; and a heater electrode provided within the thermally sprayed ceramic layer. The heater electrode is formed by the thermal spraying method. | 12-24-2015 |
| 20160155614 | SUPPORT UNIT AND SUBSTRATE TREATING APPARATUS INCLUDING THE SAME | 06-02-2016 |
| 20160198528 | MOUNTING TABLE AND SUBSTRATE PROCESSING APPARATUS | 07-07-2016 |
