| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 156345540 | With means to move the workpiece inside the etching chamber | 31 |
| 20080251208 | Plasma Treatment Apparatus - In a plasma treatment apparatus for performing plasma treatment by accommodating a substrate ( | 10-16-2008 |
| 20090056878 | TRANSFER APPARATUS - A transfer apparatus includes a first magnetic member placed in a carrier, and a second magnetic member placed in a carrier supporting unit to oppose the first magnetic member from a position below the first magnetic member in the vertical direction, and having the same polarity as that of the first magnetic member. The repulsive force generated between the first and second magnetic members vertically pulls up the carrier, thereby reducing the weight of the carrier supported by the carrier supporting unit. | 03-05-2009 |
| 20100243168 | DEVICE AND METHOD FOR SUPPORTING A SUBSTRATE - A substrate support device including a support member having a lower-surface support section to support a lower surface of a substrate; and a position restriction section provided on the lower-surface support section, the position restriction section being formed to surround a periphery of the substrate supported on the lower-surface support section and restrict a position of the substrate. At least one of the lower-surface support section and the position restriction section includes a base material and a protective film formed to cover the base material and prevent at least one of wear and chemical erosion to which the base material will be subject. The substrate support device further includes, for example, a base that supports the support member, and a driving structure that moves the support member in a relative fashion with respect to the base, and is constructed as a substrate transport device. | 09-30-2010 |
| 20110162803 | CHAMBER WITH UNIFORM FLOW AND PLASMA DISTRIBUTION - Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween. | 07-07-2011 |
| 20120024479 | APPARATUS FOR CONTROLLING THE FLOW OF A GAS IN A PROCESS CHAMBER - Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume. | 02-02-2012 |
| 20120097332 | SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE - Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground. | 04-26-2012 |
| 20120111502 | STRUCTURE OF SUBSTRATE SUPPORTING TABLE, AND PLASMA PROCESSING APPARATUS - Disclosed is the structure of a substrate supporting table wherein corrosion of a bellows is eliminated, generation of dusts from the bellows is suppressed, and the volume and the weight of the sections to be driven are reduced. A plasma processing apparatus is also disclosed. In the substrate supporting table for the plasma processing apparatus ( | 05-10-2012 |
| 20120138230 | SYSTEMS AND METHODS FOR MOVING WEB ETCH, CVD, AND ION IMPLANT - Systems and methods for moving substrates through process chambers for photovoltaic (PV) or solar cell applications are disclosed. In particular, systems and methods for moving substrates through process chambers using a conveyor belt are disclosed. The conveyor belt can be used to move the substrates through etch chambers, chemical vapor deposition (CVD) chambers, and/or ion implant chambers, and the like. | 06-07-2012 |
| 20120305192 | PARALLEL SINGLE SUBSTRATE PROCESSING FLUID JET MODULE - A system for fluid processing one or more substrate surfaces arrayed in a fluid. The system has a process module with a frame and a plurality of fluid jet elements to inject a fluid at the substrate surfaces without contacting the substrate surfaces. A substrate holder assembly has a holder frame and a number of substrate holders, each of which is coupled to the holder frame and configured to hold a substrate so that a different substrate is held by each substrate holder of the substrate holder assembly for transport therewith as a unit to and from the process module. The substrate holder assembly and each substrate holder of the substrate holder assembly are removably coupled to the process module frame and, when coupled to the process module frame, each substrate holder is independently moveable and positionable relative to the other substrate holders of the substrate holder assembly. | 12-06-2012 |
| 20120305193 | PARALLEL SINGLE SUBSTRATE PROCESSING AGITATION MODULE - A system for fluid processing one or more substrate surfaces arrayed in a fluid. The system has a process module with a frame and a plurality of agitation members to fluid process the substrate surfaces without contacting the substrate surfaces. A substrate holder assembly has a holder frame and a number of substrate holders, each of which is coupled to the holder frame and configured to hold a substrate so that a different substrate is held by each substrate holder of the substrate holder assembly for transport therewith as a unit to and from the process module. The substrate holder assembly and each substrate holder of the substrate holder assembly are removably coupled to the process module frame and, when coupled to the process module frame, each substrate holder is independently moveable and positionable relative to the other substrate holders of the substrate holder assembly. | 12-06-2012 |
| 20120305194 | Etching Device, Plasma Processing Device - A plasma processing device capable of positioning a protective member for covering the upper surface of a peripheral edge portion of a substrate, with high accuracy. A plasma processing device has, a platen on which a substrate K is placed, a gas supply device, a plasma generating device, an RF power supply unit, an annular and plate-shaped protective member configured to be capable of being placed on a peripheral portion of the platen and which covers a peripheral edge portion of the substrate K, support members 35 supporting the protective member, and a lifting cylinder lifting up and down the platen. At least three first protrusions which are engaged with the peripheral portion of the platen are formed on a pitch circle on the lower surface of the protective member and the center of the pitch circle is co-axial with the central axis of the protective member. | 12-06-2012 |
| 20140338836 | ETCHING APPARATUS - An etching apparatus includes a chamber capable of being evacuated, a first electrode provided in the chamber and including a tray support portion configured to support a tray which can hold a plurality of substrates and load/unload the substrates into/from the chamber, and a voltage applying unit configured to apply a voltage to the first electrode. A dielectric plate is attached to a portion, of an obverse surface of the first electrode, which faces an outer edge portion of a non-target surface of the substrate. | 11-20-2014 |
| 20150027638 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD AND STORAGE MEDIUM - A substrate processing unit | 01-29-2015 |
| 20150114568 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus including a wafer stage disposed in a processing chamber arranged in a vacuum chamber to hold a wafer as a processing object on a surface of the wafer stage, to conduct processing for the wafer by use of plasma, wherein the wafer includes grooves, each of the grooves extending from a central portion of a surface on which the wafer is held to an outer circumferential edge of the surface, the grooves including openings at the outer circumferential edge, and the processing is conducted in a state in which the wafer is held at predetermined height over an upper surface of the wafer stage. | 04-30-2015 |
| 20150311106 | ELECTROSTATIC CHUCK, PLACING TABLE AND PLASMA PROCESSING APPARATUS - Disclosed is an electrostatic chuck including a circular placing region configured to place a processing target object thereon. The placing region includes a bottom surface and a plurality of protrusions configured to protrude from the bottom surface. Further, the plurality of protrusions is formed at a plurality of positions set at a regular interval on each of a plurality of circles set concentrically and at a regular interval around a center of the placing region. Furthermore, among the plurality of positions, a plurality of positions set on each of any two adjacent circles is set not to be positioned on the same straight line extending from the center. | 10-29-2015 |
| 20150337460 | SUBSTRATE-PROCESSING DEVICE - Provided is a substrate processing apparatus. The substrate processing apparatus includes a process chamber in which a process with respect to a substrate is performed, a preliminary chamber connected to the process chamber, the preliminary chamber having a passage through which the substrate is accessed, a blocking plate partitioning the inside of the preliminary chamber into a holding region and a transfer region, a substrate holder on which at least one substrate is loaded, the substrate holder being switchable into a loading position in which the substrate holder is disposed on the holding region and a process position in which the substrate holder is disposed on the process chamber, a substrate transfer unit transferring the substrate holder from the loading position to the process position, the substrate transfer unit including a transfer arm connected to the substrate holder and a driver operating the transfer arm, a gas supply port supplying an inert gas into the preliminary chamber, and a lower exhaust port connected to the transfer region and disposed above the gas supply port to exhaust the inside of the preliminary chamber. The lower exhaust port is disposed closer to a bottom surface of the preliminary chamber than a top surface of the preliminary chamber. | 11-26-2015 |
| 20150371877 | SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE - Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground. | 12-24-2015 |
| 20160035563 | APPARATUS AND METHOD FOR PROCESSING SEMICONDUCTOR WAFERS - An apparatus for processing a semiconductor wafer includes a factory interface configured to couple with a manufacturing chamber. The factory interface includes a robot; an orienter adjacent to the robot; and a particle remover above the orienter and facing toward a wafer. The particle remover is configured to blow ionized gas on a surface of the wafer so as to remove particles. | 02-04-2016 |
| 20160118290 | VERTICAL NO-SPIN PROCESS CHAMBER - A processing chamber includes a base, a cover, and grippers. The base includes a body, a mating surface, an inner zone cavity extending into the body, a divider substantially surrounding the inner zone cavity, and an outer zone cavity extending into the body and substantially surrounding the divider. The cover includes a mating surface that contacts the body mating surface when the processing chamber is closed. The grippers hold the wafer in the inner zone cavity when the processing chamber is closed. | 04-28-2016 |
| 156345550 | With means to cause rotary movement of the workpiece | 12 |
| 20080216959 | PLASMA PROCESSING APPARATUS - The present invention provides a plasma processing apparatus which has the function of removing a deposit adhering to the periphery of the backside of a sample and has high throughput and low cost. That is, a deposit removal unit for removing the deposit on the periphery of the backside of the sample by pulsed laser irradiation is connected to an atmosphere-side transfer chamber of the plasma processing apparatus. | 09-11-2008 |
| 20090101285 | WAFER SPIN CHUCK AND AN ETCHER USING THE SAME - A wafer spin chuck and an etcher using the same are provided. According to an aspect of the present invention, there is provide a wafer spin chuck device comprising: a spin body which spins a wafer; and a stationary body which holds the spin body and is under the spin body with a space between the spin body and the stationary body, wherein the stationary body includes a blocking unit which blocks the space with a fluid. | 04-23-2009 |
| 20100032097 | SUBSTRATE TREATMENT APPARATUS - A substrate treatment apparatus includes: a treatment chamber provided therein with a chemical solution treatment area for treating a substrate with a chemical solution and a drying treatment area provided above the chemical solution treatment area for drying the substrate; a substrate holding member vertically movably provided in the treatment chamber for holding the substrate; and a lifting mechanism vertically moving the substrate in the range between the chemical solution treatment area and the drying treatment area. | 02-11-2010 |
| 20100101730 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus, which is designed to prevent the wobbling of a rotational shaft rotating, is provided. The substrate includes a rotation shaft and a connecting member. A unit is disposed between the rotational shaft and the connecting member to make the rotational shaft and the connecting member close-contact each other or a unit is disposed under the rotational shaft to prevent the wobbling of the rotational shaft. | 04-29-2010 |
| 20110126985 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a vacuum container, a rotary table to rotate in the vacuum container, a substrate placement member mounted on the rotary table in a detachable manner, the substrate placement member and the rotary table together providing a recess in which a substrate is placed on an upper side of the rotary table, and the substrate placement member constituting a bottom surface in the recess on which the substrate is placed, a position regulating unit provided at least one of the rotary table and the substrate placement member to regulate a movement of the substrate caused by a centrifugal force during rotation of the rotary table, a reactant gas supply unit to supply reactant gas to the upper side of the rotary table, and a vacuum exhaust unit to exhaust the vacuum container. | 06-02-2011 |
| 20130008610 | SURFACE TREATMENT APPARATUS - A surface treatment apparatus in which a disk-like sample-holding plate is provided inside an enclosure constituting a cylindrical circumferential wall. A cylindrical portion in an upper portion of the enclosure constitutes a material fluid supplying channel, and a channel provided on the lateral side of the sample-holding plate in the enclosure and shaped spreading as it goes farther from the cylindrical portion constitutes a fluid discharge channel. The fluid discharge channel employs a parabola curve or the like in which the position of the upper end of the outmost circumference of the sample-holding plate is defined as a focus position and the position of the upper end of the outlet that is symmetrically opposite to the focus position is defined as a reference position. | 01-10-2013 |
| 20130192761 | Rotary Substrate Processing System - A substrate processing system for processing multiple substrates is provided and generally includes at least one processing platform and at least one staging platform. Each substrate is positioned on a substrate carrier disposed on a substrate support assembly. Multiple substrate carriers, each is configured to carry a substrate thereon, are positioned on the surface of the substrate support assembly. The processing platform and the staging platform, each includes a separate substrate support assembly, which can be rotated by a separate rotary track mechanism. Each rotary track mechanism is capable of supporting the substrate support assembly and continuously rotating multiple substrates carried by the substrate carriers and disposed on the substrate support assembly. Each substrate is thus processed through at least one shower head station and at least one buffer station, which are positioned at a distance above the rotary track mechanism of the processing platform. Each substrate can be transferred between the processing platform and the staging platform and in and out the substrate processing system. | 08-01-2013 |
| 20130220551 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus includes a substrate stage, a strut which supports the substrate stage, a first rotation drive portion which rotates the support, and at least three lift pins which are provided in the substrate stage. The substrate processing apparatus includes an elevation mechanism for vertically moving the lift pins. The elevation mechanism includes a first rotating member which is disposed around the support and rotates about the support, a second rotation drive portion which rotates about a rotation axis at a position offset from the rotation axis and rotates the first rotating member, at least three second rotating members which rotate while engaging with rotation of the first rotating member and are disposed below the lift pins, mobile bodies which linearly move upon rotation of the second rotating members, and pins which vertically move the lift pins. | 08-29-2013 |
| 20140130981 | APPARATUS FOR NON-CHEMICAL, NON-OPTICAL EDGE BEAD REMOVAL - A method for removing the edge bead from a substrate by applying an impinging stream of a medium that is not a solvent for the material to be removed. The medium is applied to the periphery of the substrate with sufficient force to remove the material. Also, an apparatus to perform the inventive method. | 05-15-2014 |
| 20150361553 | ROTATING SEMI-BATCH ALD DEVICE - The present invention provides a rotating semi-batch ALD device and process which ensure high productivity, minimal particle formation, low gas consumption and high coverage during the production of semiconductors, liquid crystals, LEDs and/or solar cells. The rotating semi-batch ALD device and ALD process are characterized in that: a reaction gas supply means is configured from a shower plate for evenly discharging gas, a cavity for allowing gas to flow down gradually, and a partition wall surrounding the shower plate and the cavity; and a purge gas supply means is configured from a shower plate that causes gas to flow evenly at a high flow velocity in the transverse direction in the narrow gap between the purge gas supply means and substrates being treated. | 12-17-2015 |
| 20160376702 | DUAL MODE CHAMBER FOR PROCESSING WAFER-SHAPED ARTICLES - An apparatus for processing a wafer shaped article comprises a rotary chuck for holding a wafer shaped article and rotating the wafer shaped article about an axis of rotation. A chamber surrounds and encloses the rotary chuck, the chamber comprising an upper opening. A lid is mounted externally of the chamber so as to be movable between a closed position in which the lid seals the upper opening, and an open position in which the lid uncovers the upper opening and is displaced laterally therefrom. The chamber is openable separately from the lid so as to permit a wafer shaped article to be introduced into the chamber in a direction perpendicular to the axis of rotation. | 12-29-2016 |
| 20190148109 | Method and Apparatus for Anisotropic Pattern Etching and Treatment | 05-16-2019 |
