| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 324754210 | Non-contact probe | 63 |
| 20110163773 | MEASURING PROBE - A measuring probe, particularly for a non-contacting vector network analysis system, having a housing and at least one coupling structure disposed on the housing and designed for coupling an HF signal from a signal line, such that at least one additional signal probe is disposed on the housing for coupling an electrical signal into the signal line. | 07-07-2011 |
| 20110267086 | TEST CIRCUIT OF AN INTEGRATED CIRCUIT ON A WAFER - A test circuit is described of a circuit integrated on wafer of the type comprising at least one antenna of the embedded type comprising at least one test antenna associated with said at least one embedded antenna that realizes its connection of the wireless loopback type creating a wireless channel for said at least one embedded antenna and allows its electric test, transforming an electromagnetic signal of communication between said at least one embedded antenna and said at least one test antenna into an electric signal that can be read by a test apparatus. | 11-03-2011 |
| 20130027071 | ACTIVE PROBE CARD FOR ELECTRICAL WAFER SORT OF INTEGRATED CIRCUITS - A testing apparatus includes a tester and a probe card system that includes a probe card connected to the tester, and an active interposer connected to the probe card and wirelessly coupled with a device to be tested. The active interposer includes pads positioned on its free surface facing the device. The pads are positioned with respect to pads of the device so that each pad of the active interposer faces a pad of the device and is separated therefrom by a dielectric. Each pair of facing pads forms an elementary wireless coupling element which allows a wireless transmission between the active interposer and the device. The active interposer also includes an amplifier circuit configured to amplify wireless signals from the device before forwarding them to the tester. The probe card system includes a transmission element able to transmit a power voltage from the tester to the device. | 01-31-2013 |
| 20130162277 | UNIFORM FIELD AREA TESTING APPARATUS AND TESTING METHOD USING SAME - A uniform field area (UFA) testing apparatus, used for an UFA test, including a testing rack and a plurality of field strength probes. The plurality of field strength probes are mounted on the testing rack. The plurality of field strength probes are positioned on a vertical plane and forms a probe grid array corresponding to the testing points of the UFA test, the grid spacing of the probe grid array corresponds to the distance of the neighboring testing points of the UFA test. | 06-27-2013 |
| 20130207681 | METHOD AND APPARATUS FOR INTERROGATING AN ELECTRONIC COMPONENT - A method and apparatus for interrogating an electronic component, includes a body having an interface for an interrogating device to use as a conduit in reliably performing multiple discrete interrogations of the electronic component without the interrogating device physically touching the electronic component. | 08-15-2013 |
| 20130293253 | Contactless Wafer Probing with Improved Power Supply - Some embodiments relate to an integrated circuit. The integrated circuit includes an inductive or capacitive wireless communication structure located on a die region of the integrated circuit. This wireless communication structure is configured to wirelessly receive a test stimulus vector to test circuitry on the die region. The integrated circuit also includes a landing region having a size and location suitable to allow a conductive needle or conductive probe to come into direct physical and electrical contact with the landing region. The landing region provides a DC power supply to the circuitry on the die region while the test stimulus vector is wirelessly received. | 11-07-2013 |
| 20140070833 | METHOD AND APPARATUS FOR DETECTING A LOOSE ELECTRICAL CONNECTION IN PHOTOVOLTAIC SYSTEM - A power circuit configured to generate and distribute DC electrical power, the power circuit includes a photovoltaic (PV) system that includes an array of PV modules electrically coupled to a combiner box, and an inverter positioned to receive DC electrical power from the array of PV modules and output AC electrical power. The PV system also includes a signal generator coupled to a first portion of the PV system, and a signal detector coupled to a second portion of the PV system, the signal detector configured to detect secondary signals generated at a loose connection of an electrical joint in the PV system, wherein the secondary signals result from a signal generated by the signal generator. | 03-13-2014 |
| 20140159759 | WIRING FAULT DETECTION METHOD, WIRING FAULT DETECTION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A wiring fault detection method according to an embodiment of the present invention is capable of determining that, in a case where a temperature rise value of a faulty portion exceeds a temperature rise threshold within a preset threshold of the number of frames, a corresponding pixel has a fault. A wiring fault detection apparatus according to the present invention includes a temperature measurement imaging unit that measure a temperature of a semiconductor substrate and forms an image thereof. | 06-12-2014 |
| 20150300882 | Dynamic Differential Thermal Measurement Systems and Methods - Dynamic Digital Modulation obtains thermal image data on active semiconductor devices with sufficient sensitivity to be used in situ with packaged devices. These techniques can be applied to dynamic failures, but can also produce quantitative data of actual power dissipation as the device is placed into different operational modes. The thermal image results can be analyzed to assist in thermal management and assessing reliability and failure analysis issues in semiconductor devices. | 10-22-2015 |
| 20160018459 | NON-CONTACT DISCHARGE TEST METHOD AND DEVICE - In a non-contact discharge test performed in a poor electromagnetic noise environment, the energy of discharge is evaluated by detecting weak light emission and processing the intensity waveform of light emission of the discharge. A database is created by measuring the intensity waveform of light emission of discharge generated as a result of application of a voltage or current to a measurement object through use of a light emission measuring device, simultaneously measuring the current waveform of the discharge through use of a current measuring device, and storing in the database the relation between analysis data sets obtained through analysis of the waveforms on the basis of information of the voltage or current applied to the measurement object. The intensity waveform of the light emission of the discharge or spark generated from the measurement object is measured while an electromagnetic wave generated as a result of the discharge of the measurement object is used as a reference. The magnitude of the discharge is estimated as a value by comparing light emission data obtained through analysis of the intensity waveform with the data recorded in the database. | 01-21-2016 |
| 20160161554 | WIRELESS PROBES - Disclosed is a probe card for testing a wireless module on an integrated circuit die contained on a wafer. The probe card includes a connector and a plurality of probes. The connector connects the probe card to test equipment. The plurality of probes connects the probe card to a wafer containing a plurality of integrated circuit dies. The probe card additionally includes an antenna configured to transmit a wireless test signal to be received by at least one of the integrated circuit dies, and/or to receive a wireless signal transmitted by at least one of the integrated circuit dies. | 06-09-2016 |
| 20160187419 | CIRCUIT TRACING USING A FOCUSED ION BEAM - Described are various embodiments of methods and systems for tracing circuitry on integrated circuits using focused ion beam based imaging techniques. In one such embodiment, a method is provide for identifying functional componentry associated with a switchable power interface on an integrated circuit, wherein the switchable power interface comprises a source and a drain with a control switch therebetween, said control switch being controllable by a control signal during operation of the integrated circuit. The method comprises connecting, with deposited conductive material, the source and the drain; applying an external voltage bias to a power input of the switchable power interface via one of the source and the drain; exposing the integrated circuit to a focused ion beam; and gathering an image of the integrated circuit during exposure to determine areas of high contrast indicating functional componentry in operative connection with the switchable power interface. | 06-30-2016 |
| 324754220 | Electron beam | 5 |
| 20110199110 | SYSTEM AND METHOD FOR MODULATION MAPPING - An apparatus for providing modulation mapping is disclosed. The apparatus includes a laser source, a motion mechanism providing relative motion between the laser beam and the DUT, signal collection mechanism, which include a photodetector and appropriate electronics for collecting modulated laser light reflected from the DUT, and a display mechanism for displaying a spatial modulation map which consists of the collected modulated laser light over a selected time period and a selected area of the IC. | 08-18-2011 |
| 20140125369 | Method For Testing Through-Silicon Vias At Wafer Sort Using Electron Beam Deflection - Through-silicon vias (TSVs) are tested using a modified integrated circuit test probe array, an electron beam generation device, a beam direction control device and an electron beam detection device. The TSV extends through a silicon substrate with end portions exposed or accessible by contacts disposed on opposing upper and lower surfaces of the substrate. The test probe array includes a test probe that accesses the lower TSV end portion and applies an AC test signal. An electron beam is directed by the beam direction control device onto the upper substrate surface such that a beam portion reflected from the upper TSV end portion is captured by the electron beam detection device. Reflected beam data is then analyzed to verify the TSV is properly formed. Various scan patterns, different test signal frequencies and an optional resistive coating are used to enhance the TSV testing process. | 05-08-2014 |
| 20150323583 | METHOD FOR DETECTING AN ELECTRICAL DEFECT OF CONTACT/VIA PLUGS - A method for detecting an electrical defect of contact/via plugs is provided. In the method, the contact/via plugs are monitored by an electron-beam (E-Beam) inspection tool to capture an image with a VC (voltage contrast) difference, and then an image extraction is performed on the image with the VC difference, wherein the image extraction is based on Target gray level/back ground gray level. The extracted image is contrasted with a layout design base to obtain a blind contact or Quasi-blind issue of contact/via plugs. A grayscale value of the VC difference having the blind contact or Quasi-blind issue is compared with a determined range of grayscale value to determine whether the VC difference is abnormal. | 11-12-2015 |
| 20160041201 | DIE STRUCTURE, CONTACT TEST STRUCTURE, AND CONTACT TESTING METHOD UTILIZING THE CONTACT TEST STRUCTURE - A die structure is described, including a device area and a contact test area. The device area has therein a device structure including a first contact plug. The contact test area has therein a contact test structure that includes a second contact plug and is different from the device structure. The contact test structure is also described, including a well, a heavily doped region in the well, and a contact plug, wherein the heavily doped region and the well are both of N-type or are both of P-type, and the contact plug is disposed over the heavily doped region. | 02-11-2016 |
| 20160084901 | APPARATUS OF INSPECTING RESISTIVE DEFECTS OF SEMICONDUCTOR DEVICES AND INSPECTING METHOD USING THE SAME - A method of inspecting a resistive defect of a semiconductor device is provided. The method includes loading a semiconductor wafer on a wafer stocker, transferring the semiconductor wafer into a laser anneal module, annealing a portion of the semiconductor wafer using a laser beam in an atmospheric pressure, transferring the annealed semiconductor wafer into an E-beam scanning module in a vacuum, scanning the annealed portions of the semiconductor wafer with an E-beam, and collecting secondary electrons emitted from the annealed portions of the semiconductor wafer. | 03-24-2016 |
| 324754230 | Optical beam | 28 |
| 20100321055 | IC TEST VECTOR GENERATOR FOR SYNCHRONIZED PHYSICAL PROBING - Systems, methods, and computer readable media storing instructions for such methods relate to generating test vectors that can be used for exercising a particular area of interest in an integrated circuit. The test vectors generally include a non-overlapping repeating and/or predictable sequence of care bits (a care bit pattern) that can be used by a tester to cause the exercise of the area and collect emissions caused by exercising the area. Such emissions can be used for analysis and debugging of the circuit and/or a portion of it. Aspects can include providing a synchronization signal that can be used by a tester to allow sensor activation at appropriate times. | 12-23-2010 |
| 20110267087 | APPARATUS AND METHOD FOR WAFER LEVEL CLASSIFICATION OF LIGHT EMITTING DEVICE - The present disclosure provides a semiconductor test system. The semiconductor test system includes a wafer stage to hold a wafer having a plurality of light emitting devices (LEDs); a probe test card operable to test each test field of the wafer; and a light detector integrated with the probe test card to collect light from a LED of the wafer. | 11-03-2011 |
| 20120326742 | ELECTRICALLY MODULATABLE EXTENDED LIGHT SOURCE AND A MEASUREMENT DEVICE FOR CHARACTERIZING A SEMICONDUCTOR INCLUDING ONE SUCH SOURCE - A light source for injecting excess carriers into a semiconductor wafer, fully illuminating a surface of the wafer. The source includes at least one set of point sources which are spaced apart at regular intervals along the X and Y axes, such that the source emits a monochromatic beam of a size that is at least equal to that of the semiconductor wafer surface to be illuminated. Each of the point sources is sinusoidally modulated by a common electrical modulator, the distance between two point sources and the distance between the source and the semiconductor wafer surface to be illuminated being selected such that the monochromatic light beam uniformly illuminates the surface. | 12-27-2012 |
| 20130002283 | Defect Detection by Thermal Frequency Imaging - A method can be used for detecting defects in an electronic integrated circuit that includes a power input and a data input. The electronic integrated circuit is powered with a periodic power signal having a frequency and an input signal is applied to the data input. A surface of the electronic integrated circuit is swept with a laser beam. A first image is generated using a laser beam reflected from the surface and a second image is generated using a selected part of the laser beam reflected from the surface. The selected part of the reflected laser beam has a frequency that corresponds to the frequency of the power signal. Defects in the integrated circuit can be detected by superposing the first image and the second image. | 01-03-2013 |
| 20130113510 | SYSTEM AND METHOD FOR MODULATION MAPPING - An apparatus for providing modulation mapping is disclosed. The apparatus includes a laser source, a motion mechanism providing relative motion between the laser beam and the DUT, signal collection mechanism, which include a photodetector and appropriate electronics for collecting modulated laser light reflected from the DUT, and a display mechanism for displaying a spatial modulation map which consists of the collected modulated laser light over a selected time period and a selected area of the IC. | 05-09-2013 |
| 20130127487 | NON-CONTACT TESTING OF PRINTED ELECTRONICS - Apparatus and methods for non-contact testing of electronic components printed on a substrate ( | 05-23-2013 |
| 20130222004 | INSPECTION APPARATUS AND INSPECTION METHOD - An inspection apparatus inspects a photovoltaic cell panel in which the photo device is formed. The inspection apparatus includes: an irradiation part that irradiates the photovoltaic cell panel with pulsed light (pump light) emitted from a femtosecond laser; a detecting part that detects an electromagnetic wave pulse, which is generated from the photovoltaic cell panel according to the irradiation of the pump light; and a continuous light irradiation part that irradiates a portion, which is irradiated with the pump light in the photovoltaic cell panel, with continuous light. | 08-29-2013 |
| 20130314116 | LASER-ASSISTED DEVICE ALTERATION USING SYNCHRONIZED LASER PULSES - A pulsed-laser LADA system is provided, which utilizes temporal resolution to enhance spatial resolution. The system is capable of resolving CMOS pairs within the illumination spot using synchronization of laser pulses with the DUT clock. The system can be implemented using laser wavelength having photon energy above the silicon bandgap so as to perform single-photon LADA or wavelength having photon energy below the silicon bandgap so as to generate two-photon LADA. The timing of the laser pulses can be adjusted using two feedback loops tied to the clock signal of an ATE, or by adjusting the ATE's clock signal with reference to a fixed-pulse laser source. | 11-28-2013 |
| 20140285227 | SYNCHRONIZED PULSED LADA FOR THE SIMULTANEOUS ACQUISITION OF TIMING DIAGRAMS AND LASER-INDUCED UPSETS - Method to extract timing diagrams from synchronized single- or two-photon pulsed LADA by spatially positioning the incident laser beam on circuit feature of interest, temporally scanning the arrival time of the laser pulse with respect to the tester clock or the loop length trigger signal, then recording the magnitude and sign of the resulting fail rate signature per laser pulse arrival time. A Single-Photon Laser-Assisted Device Alteration apparatus applies picosecond laser pulses of wavelength having photon energy equal to or greater than the silicon band-gap. A Two-Photon Laser-Assisted Device Alteration apparatus applies femtosecond laser pulses of wavelength having photon energy equal to or greater than half the silicon band-gap at the area of interest. The laser pulses are synchronized with test vectors so that pass/fail ratios can be altered using either the single-photon or the two-photon absorption effect. A sequence of synthetic images with error data illustrates timing sensitive locations. | 09-25-2014 |
| 20140292363 | SYSTEMS AND METHOD FOR LASER VOLTAGE IMAGING STATE MAPPING - An apparatus and method for laser probing of a DUT is disclosed. The system enables laser voltage imaging state mapping of devices within the DUT. A selected area of the DUT is illuminating a while the DUT is receiving test signals causing certain of the active devices to modulate. Light reflected from the DUT is collected and is converted into an electrical signal. Phase information is extracting from the electrical signal and a two-dimensional image is generated from the phase information, wherein the two-dimensional image spatially correlates to the selected area. | 10-02-2014 |
| 20150061715 | Method and Apparatus for Non-Contact Measurement of Forward Voltage, Saturation Current Density, Ideality Factor and I-V Curves in P-N Junctions - Non-contact measurement of one or more electrical response characteristics of a p-n junction includes illuminating a surface of the p-n junction with light of a first intensity having a modulation or pulsed characteristic sufficient to establish a steady-state condition in a junction photovoltage (JPV) of the p-n junction, measuring a first JPV from the p-n junction within the illumination area, illuminating the surface of the p-n junction with light of an additional intensity, measuring an additional photovoltage from the portion of the p-n junction within the illumination area, determining a photocurrent density of the p-n junction at the first intensity. The non-contact measurement further includes determining the forward voltage, the saturation current density, the ideality factor or one or more I-V curves with the measured first photovoltage, the measured additional photovoltage and/or the determined photocurrent density of the p-n junction. | 03-05-2015 |
| 20150084661 | Method for the Extraction of Recombination Characteristics at Metallized Semiconductor Surfaces - The present disclosure relates to methods for determining recombination characteristics at metallized semiconductor surfaces and of metallized semiconductor junctions, based on photo-conductance decay measurements. Dedicated test structures are used comprising a plurality of metal features in contact with a semiconductor surface at predetermined locations, the metal features being provided in a plurality of zones, each of the plurality of zones having a different metal coverage. The method comprises performing a photo-conductance decay measurement in each of the plurality of zones, thereby determining effective lifetimes for different injection levels as a function of metal coverage; and extracting the recombination characteristics from the determined effective lifetimes. | 03-26-2015 |
| 20150309115 | IMAGE GENERATION APPARATUS AND IMAGE GENERATION METHOD - An image generation apparatus is an image generation apparatus that generates an image based on measurement light from the semiconductor device, and the image generation apparatus includes an optical sensor that detects the measurement light, an optical sensor power supply that applies a constant voltage to the optical sensor to supply a current to the optical sensor, a current detector that generates a pattern signal according to magnitude of the current supplied to the optical sensor by the optical sensor power supply, and a control device that generates a pattern image based on the pattern signal. | 10-29-2015 |
| 20150331036 | FIELD-BIASED SECOND HARMONIC GENERATION METROLOGY - Various approaches can be used to interrogate a surface such as a surface of a layered semiconductor structure on a semiconductor wafer. Certain approaches employ Second Harmonic Generation and in some cases may utilize pump and probe radiation. Other approaches involve determining current flow from a sample illuminated with radiation. Decay constants can be measured to provide information regarding the sample. Additionally, electric and/or magnetic field biases can be applied to the sample to provide additional information. | 11-19-2015 |
| 20150346524 | METHOD AND APPARATUS FOR TESTING OPERATION OF AN OPTICAL LIQUID CRYSTAL DEVICE - Methods and apparatus for testing operation of a single or multiple tunable active optical device(s) operated by one or more driving electrodes are described. Test methods and apparatus are provided for device testing without necessarily requiring direct physical contact with the driving electrodes. Testing subjects devices to incident light along an optical path and to an external electric field applied to the device producing a dipolar charge distribution within the electrodes, causing the device to operate. The effect of device operation on incident light is optically sensed. The sensed effect is analyzed to identify device defects. Test methods and apparatus are provided for testing multiple unsingulated devices during fabrication employing a strip contact structure having contact strips connected to multiple devices and extending to wafer edges, such that singulating devices leaves portions of the strip contact structure exposed on device dice edges providing electrical contacts in use. | 12-03-2015 |
| 20150355274 | PRECISION PROBE POSITIONING FOR AT-SPEED INTEGRATED CIRCUIT TESTING USING THROUGH SILICON IN-CIRCUIT LOGIC ANALYSIS - A method, system, and computer program product for precision probe positioning and testing of an integrated circuit. Methods, systems, and a computer program product implement techniques for determining a particular area of interest for precision probe positioning and testing where the particular area of interest comprises an area less than an entire area of the integrated circuit. Once the particular area of interest for testing has been determined, then a laser probe is steered or otherwise directed to illuminate a plurality of pixels within the area of interest so as to generate reflected signals corresponding to the illuminated pixels. Techniques are provided for measuring the reflected signals to determine information about the IC within the area of interest. CAD data or user data can be used to determine XY addressable pixel locations within the area of interest. | 12-10-2015 |
| 20150377959 | SEMICONDUCTOR DEVICE INSPECTION DEVICE AND SEMICONDUCTOR DEVICE INSPECTION METHOD - A semiconductor device inspection system includes a laser beam source, a tester, an optical sensor, a first spectrum analyzer for measuring first phase information serving as phase information of the detection signal, a reference signal generating unit for generating a reference signal of a predetermined frequency, a second spectrum analyzer for measuring second phase information serving as phase information of a reference signal, and an analysis unit for deriving phase information of the detection signal at the predetermined frequency, wherein the first spectrum analyzer measures the first phase information with respect to the reference frequency, the second spectrum analyzer measures the second phase information with respect to the reference frequency, and the frequency of the base signal of the first spectrum analyzer and the phase thereof are synchronized with the frequency of the base signal of the second spectrum analyzer and the phase thereof. | 12-31-2015 |
| 20160047858 | DEFECT ISOLATION METHODS AND SYSTEMS - A test system and method for testing integrated circuits with improved defect localization is disclosed. A laser is used to perturb a device under test (DUT) at a test location. A tester tests the DUT with a test pattern and compares test results with compare vectors in a prior failure log. When a failure signature is matched, a failure signal is generated, indicating that the test location is a failed location. Comparing the test results with the compare vectors in the prior failure log and generating the failure signal when the failure signature is detected reduces artifacts from testing, shortening debug turnaround time. | 02-18-2016 |
| 20160061883 | RADIOMETRIC TEST AND CONFIGURATION OF AN INFRARED FOCAL PLANE ARRAY AT WAFER PROBE - Disclosed herein are systems and methods for testing FPAs on a wafer prior to dicing the wafer into individual dies. A focal plane array (FPA) can comprise an array of photodetectors, such as microbolometers, on a semiconductor substrate or die. FPAs can be manufactured on a wafer to make multiple FPAs on a single wafer that can be later diced or divided into individual FPAs. Prior to dicing the wafer, the FPAs can be tested electrically and radiometrically in bulk to characterize individual FPAs, to identify bad pixels, to identify bad chips, to calibrate individual FPAs, and the like. These test results can be used to determine acceptable FPAs and can be used to provide initial settings for imaging systems with the tested and integrated FPA. | 03-03-2016 |
| 20160069952 | DETECTOR DEVICE FOR FUNCTIONAL CERTIFICATION - A detector device for functional certification includes a probe, a waveguide and a first micro-antenna. The probe includes a tip portion and a through-portion, wherein an end of the through-portion penetrates a first surface of the probe to form a first opening, and an opposite end of the through-portion penetrates the tip portion to form a second opening. The waveguide is disposed in the through-portion. The first micro-antenna is installed in the second opening and electrically connected with the waveguide. | 03-10-2016 |
| 20160079129 | METHOD OF EVALUATING METAL CONTAMINATION IN BORON-DOPED P-TYPE SILICON WAFER, DEVICE OF EVALUATING METAL CONTAMINATION IN BORON-DOPED P-TYPE SILICON WAFER, AND METHOD OF MANUFACTURING BORON-DOPED P-TYPE SILICON WAFER - An aspect of the present invention relates to a method of evaluating metal contamination in a boron-doped p-type silicon wafer, which comprises measuring over time by a microwave photoconductive decay method a recombination lifetime following irradiation with light of a silicon wafer being evaluated and obtaining information on change over time of the recombination lifetime, and comparing the information on change over time of the recombination lifetime that has been obtained with reference information on change over time that has been obtained by calculation or actual measurement of a recombination lifetime of an Fe-contaminated boron-doped p-type silicon wafer to determine whether or not metal contamination other than Fe is present in the silicon wafer being evaluated. | 03-17-2016 |
| 20160109513 | SYSTEMS AND METHOD FOR LASER VOLTAGE IMAGING - An apparatus and method for laser voltage testing of a DUT is disclosed. The system enables laser voltage probing and laser voltage imaging of devices within the DUT. A selected area of the DUT is illuminating a while the DUT is receiving test signals causing certain of the active devices to modulate. Light reflected from the DUT is collected and is converted into an electrical signal. The electrical signal is sampled by an ADC and the output of the ADC is sent to an FPGA. The FPGA operates on the signal so as to provide an output that emulates a spectrum analyzer or a vector analyzer. | 04-21-2016 |
| 20160116531 | MINIMUM VOLTAGE AND MAXIMUM PERFORMANCE MAPPING USING LASER-ASSISTED TECHNIQUES - A method and apparatus for mapping an electronic device. The electronic device is loaded into a test fixture, which may be an automated test equipment (ATE). A laser beam is stepped across locations of interest. At each location of interest a minimum voltage and/or maximum frequency are computed. A contour map of the changes in minimum voltage and maximum frequency across a field of view of the electronic device is generated. Additional embodiments provide signaling a laser scan module during the rising edge of a synchronization pulse to indicate that minimum voltage (Vmin) and maximum frequency (Fmax) specification search data is provided to a laser voltage probe. A Vmin/Fmax module compares the specification search data with the data read from the laser voltage probe and computes a parameter shift value. The laser beam is moved to another location when the falling edge of the synchronization pulse occurs. | 04-28-2016 |
| 20160131703 | SYSTEM AND METHOD FOR MODULATION MAPPING - Probing an integrated circuit (IC), by: electrically applying stimulation signal to said IC; scanning a selected area of said IC with a monochromatic beam; collecting beam reflection from the selected area of said IC, wherein the beam reflection correspond to modulation of the monochromatic beam by active devices of said IC; converting said beam reflection to an electrical probing signal; selecting a frequency or a band of frequencies of said probing signal; utilizing the probing signal to generate a spatial modulation map for various locations over the selected area of said IC; and displaying the spatial map on a monitor, wherein grey scale values correspond to modulation signal values. | 05-12-2016 |
| 20160139200 | SYSTEMS AND METHOD FOR LASER VOLTAGE IMAGING STATE MAPPING - An apparatus and method for laser probing of a DUT is disclosed. The system enables laser voltage imaging state mapping of devices within the DUT. A selected area of the DUT is illuminating a while the DUT is receiving test signals causing certain of the active devices to modulate. Light reflected from the DUT is collected and is converted into an electrical signal. Phase information is extracting from the electrical signal and a two-dimensional image is generated from the phase information, wherein the two-dimensional image spatially correlates to the selected area. | 05-19-2016 |
| 20160161556 | DEFECT ISOLATION METHODS AND SYSTEMS - A test system for testing devices is disclosed. The test system includes a scanning microscope module and a test module. The scanning microscope module, when testing a device under test (DUT), is configured to perturb the DUT with a laser at a test (pixel) location. The test module includes a tester unit, a reference failure log containing prior failing compare vectors of interest, and a comparator unit which includes a software comparator. The tester unit is configured to perform a test run at the test location of the DUT with a test pattern. If the test run fails testing, the tester unit is configured to compare using the comparator unit to determine if failing test vectors of the test run matches a desired failure signature, and to generate a comparator trigger pulse if failing test vectors match the prior failure signature. The trigger pulse indicates that the test location of the DUT is a failed location. | 06-09-2016 |
| 20160202313 | LASER-ASSISTED DEVICE ALTERATION USING SYNCHRONIZED LASER PULSES | 07-14-2016 |
| 20160377675 | OPTICAL NANOPROBING OF INTEGRATED CIRCUITS - Apparatus for electrical and optical nanoprobing at resolution beyond optical diffraction limit. Navigation microscope is configured for navigation to a region of interest. A probe spatial positioner supports a fork and an oscillating piezotube is attached to the free end of the fork and provides an output indicating of a distance to the sample. A single-mode optical fiber having a near-field transducer formed at an end thereof is attached to the oscillating piezotube such that the near-field transducer extends below the oscillating piezotube towards the sample. A photodetector is positioned to detect photons collected from the sample. The near-field transducer may be formed as a tapered section formed at the end of the single-mode optical fiber, a metallic coating formed at a tip of the tapered section, and an aperture formed in the metallic coating so as to expose the tip of the tapered section through the metallic coating. | 12-29-2016 |
| 324754240 | With plasma probe | 1 |
| 20140132299 | Electrical Inspection of Electronic Devices Using Electron-Beam Induced Plasma Probes - A non-mechanical contact signal measurement apparatus includes a first conductor on a structure under test and a gas in contact with the first conductor. At least one electron beam is directed into the gas so as to induce a plasma in the gas where the electron beam passes through the gas. A second conductor is in electrical contact with the plasma. A signal source is coupled to an electrical measurement device through the first conductor, the plasma, and the second conductor when the plasma is directed on the first conductor. The electrical measurement device is responsive to the signal source. | 05-15-2014 |
| 324754250 | Ultrasonic | 2 |
| 20150091597 | SYSTEMS AND METHODS FOR DETECTING PARTIAL DISCHARGE IN ELECTRICAL COMPONENTS - A system for detecting partial discharge in electrical components may include a control system that may operate a drive in an industrial automation system. The industrial automation system may include the electrical components being analyzed for partial discharge. The system may also include one or more acoustic sensors that may detect one or more acoustic waveforms generated within at least one of the electrical components. The system may also include a monitoring system that may receive the acoustic waveforms from the acoustic sensors and determine whether the one electrical component is experiencing partial discharge based on the acoustic waveforms. The monitoring system may then send a notification to the control system when the one electrical component is determined to be experiencing partial discharge, such that the notification indicates that the one electrical component is experiencing partial discharge. | 04-02-2015 |
| 20150091598 | TRANSFORMER FAULT DETECTION APPARATUS AND METHOD - The transformer fault detection apparatus includes an integrated sensor unit for sensing signals through a plurality of sensors located on each of upper and lower drain valves in a transformer. A first possible discharge area calculation unit calculates a first possible discharge area estimated to be a location of a partial discharge source of the transformer, based on arrival times of signals sensed by different sensors located on the upper drain valve. A second possible discharge area calculation unit calculates a second possible discharge area estimated to be the location of the partial discharge source, based on arrival times of signals sensed by different sensors located on the lower drain valve. A final possible discharge area calculation unit calculates a final possible discharge area, based on an overlapping area between the first and second possible discharge areas. | 04-02-2015 |
| 324754270 | Electrical field | 3 |
| 20110050262 | ACTIVE NON-CONTACT PROBE CARD - Provided is an active non-contact probe card including a carrier, a support base, a piezoelectric material layer, an active sensor array chip and a control circuit. The support base is disposed on the carrier. The piezoelectric material layer is connected with the support base. The position of the active sensor array chip with respect to the carrier is determined according to the thicknesses of the support base and the thicknesses of the piezoelectric material layer. A control circuit provides a control voltage to the piezoelectric material layer to control the thickness of the piezoelectric material layer, so as to adjust the position of the active sensor array chip with respect to the carrier. | 03-03-2011 |
| 20120153979 | E-Field Probe Integrated with Package Lid - A measurement apparatus is disclosed. The measurement apparatus includes a lid configured to be removably affixed to a microcircuit case. One or more penetrations through the lid allow insertion of a signal-conducting probe. The probe is removably affixed to the lid at the site of the penetration. The probe includes a central conductive pin. The central conductive pin transmits to a connection outside the case a radio-frequency signal inductively received from a source inside the case. The probe also includes a dielectric region radially surrounding a portion of the central conductive pin, and a grounded outer conductive housing radially surrounding the dielectric region and electrically isolated from the central conductive pin by the dielectric region. | 06-21-2012 |
| 20150331017 | CONTACTLESS VOLTAGE SENSING DEVICES - A contactless voltage sensing device configured to measure a voltage value of a conductor is provided. The contactless voltage sensing device includes a first impedance element having a first impedance, where the first impedance element is configured to be operatively coupled to the conductor. Further, the contactless voltage sensing device includes an antenna operatively coupled to the first impedance element, a second impedance element having a second impedance, where the second impedance element is formed in part by the antenna and a parasitic impedance element, and where the parasitic impedance element includes a parasitic impedance, and measurement and communication circuitry coupled to the first impedance element to measure the voltage value of the conductor. | 11-19-2015 |
| 324754290 | Magnetic field | 5 |
| 20140300381 | CONTACTLESS MEASURING SYSTEM - The invention relates to a contactless measuring system having at least one test probe forming part of a coupling structure for the contactless decoupling of a signal running on a signal waveguide, wherein the signal waveguide is designed as a conductor of the electric circuit on a circuit board and as part of an electric circuit. To this end, at least one contact structure is configured and disposed on the circuit board such that said contact structure is galvanically separated from the signal waveguide, forms part of the coupling structure, is displaced completely within the near field of the signal waveguide, and has at least one contact point, which may be electrically contacted by a contact of the test probe. | 10-09-2014 |
| 20140354320 | APPARATUS AND METHOD FOR TESTING THE INTERCONNECTION OF PHOTOVOLTAIC CELLS - Apparatus and method for contactless testing a closed loop electrical connection in particular suited for testing the interconnection of photovoltaic cells in a solar pane. The apparatus comprises two coils. The first coil is a driving coil ( | 12-04-2014 |
| 20150077151 | Apparatus and Method for Testing Electric Conductors - A testing device for testing electric conductors includes a probe configured to measure a magnetic field caused by a current in one or more electric conductors of a device under testing (DUT). An output generator configured to generate output data, wherein the output data depend on the measured magnetic field. | 03-19-2015 |
| 20150355240 | CURRENT SENSOR INSPECTION SYSTEM AND CURRENT SENSOR INSPECTION METHOD - A current sensor inspection system according to the present invention comprises a first wire, a second wire, a direct-current power supply device and an alternating-current power supply device. The first wire and the second wire are insulated from each other and pass through the plane surrounded by the core. The direct-current power supply device is capable of outputting a value of a direct current. The alternating-current power supply device is capable of outputting a value of an alternating current. Only the direct-current power supply device is connected to the first wire, and only the alternating-current power supply device is connected to the second wire. | 12-10-2015 |
| 20160252572 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING VARIABLE FREQUENCY TYPE PROBE TEST PAD AND SEMICONDUCTOR SYSTEM | 09-01-2016 |
| 324754310 | Radio wave | 7 |
| 20110267088 | CONTACTLESS LOOP PROBE - The invention relates to a contactless loop probe for the contactless decoupling of an HF signal for a contactless measuring system, comprising at least one coupling structure ( | 11-03-2011 |
| 20120098560 | ELECTROMAGNETIC FIELD MEASURING APPARATUS, ELECTROMAGNETIC FIELD MEASURING METHOD USED FOR THE SAME, AND NON-TRANSITORY COMPUTER READABLE MEDIUM STORING ELECTROMAGNETIC FIELD MEASUREMENT CONTROL PROGRAM - An electromagnetic field measuring apparatus capable of measuring an electromagnetic field for a minuscule area in which electronic devices are densely packed with a high sensitivity is provided. In an electromagnetic field measuring apparatus according to the present invention, the amplitude level of signal light (pf) is adjusted by the analyzer ( | 04-26-2012 |
| 20120133384 | ELECTRICALLY MODULATABLE EXTENDED LIGHT SOURCE AND A MEASUREMENT DEVICE FOR CHARACTERIZING A SEMICONDUCTOR INCLUDING ONE SUCH SOURCE - A light source for injecting excess carriers into a semiconductor wafer, fully illuminating a surface of the wafer. According to the disclosed embodiments, the source includes at least one set of point sources which are spaced apart at regular intervals along the X and Y axes, such that the source emits a monochromatic beam of a size that is at least equal to that of the semiconductor wafer surface to be illuminated. Each of the point sources is sinusoidally modulated by a common electrical modulator, the distance between two point sources and the distance between the source and the semiconductor wafer surface to be illuminated being selected such that the monochromatic light beam uniformly illuminates the surface. | 05-31-2012 |
| 20120268153 | NON-CONTACT TEST SYSTEM - Electronic device structures such as structures containing antennas, connectors, welds, electronic device components, conductive housing structures, and other structures can be tested for faults using a non-contact test system. The test system may include a vector network analyzer or other test unit that generates radio-frequency tests signals in a range of frequencies. The radio-frequency test signals may be transmitted to electronic device structures under test using an antenna probe that has one or more test antennas. The antenna probe may receive corresponding radio-frequency signals. The transmitted and received radio-frequency test signals may be analyzed to determine whether the electronic device structures under test contain a fault. | 10-25-2012 |
| 20140176175 | Dry Catheter RF Tester - A method and a system of testing an electrical signal path functionality of a sensing catheter in a dry environment. A variety of test input patterns are generated by an arbitrary near field RF signal generator, transmitted into the sensing catheter disposed in a shielded enclosure. B-mode like images corresponding to the test input patterns are generated and displayed by an imaging system connected to a proximal end of the sensing catheter, and then analyzed by a computer system, as dependent on the frequency, amplitude, and phase of the test input patterns. A determination is made as to whether the sensing catheter retains a desired electrical signal path functionality based on the analysis. The sensing catheter could be a variety of sensing catheters including forward looking catheters, a rotational IVUS catheters, or phased array IVUS catheters. | 06-26-2014 |
| 20150048858 | NON-CONTACT TEST SYSTEM - Electronic device structures such as structures containing antennas, connectors, welds, electronic device components, conductive housing structures, and other structures can be tested for faults using a non-contact test system. The test system may include a vector network analyzer or other test unit that generates radio-frequency tests signals in a range of frequencies. The radio-frequency test signals may be transmitted to electronic device structures under test using an antenna probe that has one or more test antennas. The antenna probe may receive corresponding radio-frequency signals. The transmitted and received radio-frequency test signals may be analyzed to determine whether the electronic device structures under test contain a fault. | 02-19-2015 |
| 20150123688 | Advanced Radio Frequency Sensing Probe - A radio-frequency probe system with a transmitting or receiving element integrated into a cable assembly is disclosed. In some embodiments a preferred configuration may contain one or more sensing elements integrated into the transmitting or receiving element. In another embodiment, the radio frequency probe comprises an antenna body fixed to a coaxial cable, in which the center conductor of the coaxial cable serves as the transmitting or receiving element. A method for monitoring, transmitting, or detecting one or more parameters using a single radio frequency probe is also disclosed. | 05-07-2015 |
