| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438791000 | Silicon nitride formation | 87 |
| 20080242116 | Method for forming strained silicon nitride films and a device containing such films - A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the silicon precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the silicon precursor with a second reactivity characteristic such that a property of the silicon nitride film formed on the substrate changes to provide the strained silicon nitride film. | 10-02-2008 |
| 20080305647 | Method for Manufacturing a Semiconductor Device - It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semiconductor substrate, the atmosphere containing a first nitriding gas nitriding the surface of the semiconductor substrate and a first diluent gas not actually reacting with the semiconductor substrate, the ratio of the sum of the partial pressure of the first diluent gas and the partial pressure of the first nitriding gas to the partial pressure of the first nitriding gas being 5 or higher, and the total pressure of the atmosphere being 40 Torr or lower. | 12-11-2008 |
| 20080311760 | Film formation method and apparatus for semiconductor process - A silicon nitride film is formed on a target substrate by performing a plurality of cycles in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. Each of the cycles includes a first supply step of performing supply of the first process gas while maintaining a shut-off state of supply of the second process gas, and a second supply step of performing supply of the second process gas, while maintaining a shut-off state of supply of the first process gas. The method is arranged to repeat a first cycle set with the second supply step including an excitation period of exciting the second process gas and a second cycle set with the second supply step including no period of exciting the second process gas. | 12-18-2008 |
| 20090042408 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS - A semiconductor device manufacturing method comprises a process of forming a film on each of multiple substrates arrayed in a processing chamber by a thermal CVD method by supplying a film forming gas into the processing chamber while heating the interior of the processing chamber, wherein in the film forming process, a cycle is performed one time or multiple times with one cycle including a step of flowing the film forming gas from one end towards the other end along the substrate array direction, and a step of flowing the film forming gas from the other end towards the one end along the substrate array direction, without forming temperature gradient along the substrate array direction in the processing chamber. | 02-12-2009 |
| 20090061651 | Substrate processing apparatus and method for manufacturing semiconductor device - A substrate processing apparatus comprising: a reaction tube that processes a substrate; a support portion that supports the substrate in the reaction tube; a process gas supply line that supplies a process gas into the reaction tube; and an exhaust line that exhausts an inside of the reaction tube, wherein the process gas is supplied into the reaction tube to form a silicon nitride film on the substrate, at least the reaction tube is made of quartz, a plurality of projections are provided on the inner wall of the reaction tube, and the diameter of the projections is larger than 2 μm but smaller than 86 μm. | 03-05-2009 |
| 20090098741 | METHOD FOR FORMING ULTRA-THIN BORON-CONTAINING NITRIDE FILMS AND RELATED APPARATUS - Boron-containing nitride films, including silicon boron nitride and boron nitride films, are deposited during, e.g., integrated circuit fabrication. The films are deposited in a process chamber having a reaction space that is defined as an open volume of the chamber directly above the substrate. The boron-containing nitride films are formed by flowing silicon and boron precursors into the process chamber while maintaining the volume, as measured under standard conditions, of silicon and boron precursors, e.g., SiH | 04-16-2009 |
| 20090111284 | METHOD FOR SILICON BASED DIELECTRIC CHEMICAL VAPOR DEPOSITION - Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes heating a substrate disposed in a processing chamber to a temperature less than about 550 degrees Celsius; flowing a nitrogen and carbon containing chemical comprising (H | 04-30-2009 |
| 20090163040 | Substrate Processing Apparatus and Manufacturing Method of Semiconductor Device - A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container. | 06-25-2009 |
| 20090181550 | Film formation method and apparatus for semiconductor process - A film formation process is performed to form a silicon nitride film on a target substrate within a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas. The method is preset to compose the film formation process of a main stage with an auxiliary stage set at one or both of beginning and ending of the film formation process. The main stage includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. The auxiliary stage includes no excitation period of supplying the second process gas to the process field while exciting the second process gas by the exciting mechanism. | 07-16-2009 |
| 20090209111 | Method for fabricating semiconductor device - A method for fabricating a semiconductor device, according to the present invention includes the steps of: preparing an SOI substrate, which comprises a semiconductor supporting layer, an oxide layer formed on the semiconductor supporting layer and an SOI layer formed on the oxide layer; forming a semiconductor device on the SOI layer; forming a passivation layer over the SOI substrate, the passivation layer allowing a UV light to pass through it; and applying a UV light to the SOI substrate after the step of forming the semiconductor device is completed. | 08-20-2009 |
| 20090280654 | METHOD OF FORMING A SILICON NITRIDE LAYER ON A GATE OXIDE FILM OF A SEMICONDUCTOR DEVICE AND ANNEALING THE NITRIDE LAYER - A process for forming a silicon nitride layer on a gate oxide film as part of formation of a gate structure in a semiconductor device includes: forming a layer of silicon nitride on top of a gate oxide film on a semiconductor substrate by a nitridation process, heating the semiconductor substrate in an annealing chamber, exposing the semiconductor substrate to N | 11-12-2009 |
| 20100055927 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - A silicon nitride film including stoichiometrically excessive silicon with respect to nitrogen is formed. The silicon nitride film may be formed by supplying dichlorosilane to a substrate under a condition where CVD (chemical vapor deposition) reaction is caused to form a silicon film including several or less atomic layers on the substrate, supplying ammonia to the substrate in a non-plasma atmosphere to thermally nitride the silicon film under a condition where the nitriding reaction of the silicon film by the ammonia is not saturated, and alternately repeating the supplying of dichlorosilane and the supplying of ammonia. | 03-04-2010 |
| 20100144162 | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate. | 06-10-2010 |
| 20100190355 | Substrate processing apparatus and manufacturing method of semiconductor device - A substrate processing apparatus, including: a reaction container in which a substrate is processed; a seal cap, brought into contact with one end in an opening side of the reaction container via a first sealing member and a second sealing member so as to seal the opening of the reaction container air-tightly; a first gas channel, formed in a region between the first sealing member and the second sealing member in a state where the seal cap is in contact with the reaction container; a second gas channel, provided to the seal cap and through which the first gas channel is in communication with an inside of the reaction container; a first gas supply port that is provided to the reaction container and supplies a first gas to the first gas channel; and a second gas supply port that is provided to the reaction container and supplies a second gas into the reaction container, wherein a front end opening of the first gas supply port opening to the first gas channel, and a base opening of the second gas channel opening to the first gas channel being separated from each other in a state where the seal cap is in contact with the reaction container. | 07-29-2010 |
| 20100304574 | FILM FORMATION METHOD AND APPARATUS FOR SEMICONDUCTOR PROCESS - Disclosed is a method for using a film formation apparatus to form a silicon nitride film by CVD on target substrates while suppressing particle generation. The apparatus includes a process container and an exciting mechanism attached on the process container. The method includes conducting a pre-coating process by performing pre-cycles and conducting a film formation process by performing main cycles. Each of the pre-cycles and main cycles alternately includes a step of supplying a silicon source gas and a step of supplying a nitriding gas with steps of exhausting gas from inside the process container interposed therebetween. The pre-coating process includes no period of exciting the nitriding gas by the exciting mechanism. The film formation process repeats a first cycle set that excites the nitriding gas by the exciting mechanism and a second cycle that does not excite the nitriding gas by the exciting mechanism. | 12-02-2010 |
| 20110014798 | HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS - A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor. | 01-20-2011 |
| 20110065288 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing method comprising: loading a substrate, on which polysilazane is applied, into a substrate process chamber; maintaining an inside of the substrate process chamber, into which the substrate is loaded, in water vapor atmosphere and depressurization atmosphere at a temperature of 400° C.; performing a first heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in the water vapor atmosphere and the depressurization atmosphere at the temperature of 400° C.; next, increasing an inner temperature of the substrate process chamber from the temperature of 400° C. in the first heat treatment process to a temperature ranging from 900° C. to 1000° C.; and performing a second heat treatment process on the substrate in a state where the inside of the substrate process chamber is maintained in water vapor atmosphere and depressurization atmosphere at the temperature ranging from 900° C. to 1000° C. | 03-17-2011 |
| 20110065289 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS - There are provided a method of manufacturing a semiconductor device and a substrate processing apparatus by which the quality of a silicon nitride film can be improved. The method comprises: supplying a silicon-containing gas into a process chamber in which a substrate is accommodated in a heated state; and supplying a nitrogen-containing gas into the process chamber. The supplying of the silicon-containing gas and the supplying of the nitrogen-containing gas are alternately repeated to form a silicon nitride film on the substrate. The process chamber is switched at least once between an exhaust stop state and an exhaust operation state during the supplying of the nitrogen-containing gas so as to vary an inside pressure of the process chamber in a manner such that the maximum inside pressure of the process chamber is twenty or more times the minimum inside pressure of the process chamber. | 03-17-2011 |
| 20110159703 | DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO - Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H | 06-30-2011 |
| 20110183528 | COMPOSITION AND METHOD FOR LOW TEMPERATURE DEPOSITION OF SILICON-CONTAINING FILMS SUCH AS FILMS INCLUDING SILICON, SILICON NITRIDE, SILICON DIOXIDE AND/OR SILICON-OXYNITRIDE - Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as low dielectric constant (k) thin films, high k gate silicates, low temperature silicon epitaxial films, and films containing silicon nitride (Si | 07-28-2011 |
| 20110300722 | SUBSTRATE PROCESSING APPARATUS - A substrate processing device comprises a reaction vessel | 12-08-2011 |
| 20120040536 | A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY - Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like. | 02-16-2012 |
| 20120164848 | METHOD FOR FORMING NITRIDE FILM - A plasma-assisted ALD method using a vertical furnace and being performed by repeating a cycle until a desired film thickness is obtained is disclosed. The cycle comprises introducing a source gas containing a source to be nitrided, adsorbing, purging, introducing a nitriding gas and nitriding the source, and then, purging. A flow rate of a second carrier gas during introduction of the nitriding gas is reduced relative to that of a first carrier gas during introduction of the source gas. Particularly, a flow ratio of NH | 06-28-2012 |
| 20120196452 | METHOD TO INCREASE TENSILE STRESS OF SILICON NITRIDE FILMS USING A POST PECVD DEPOSITION UV CURE - High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation. | 08-02-2012 |
| 20120208376 | METHOD OF FORMING SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A method of forming a silicon nitride film by using a plasma CVD method, where the silicon nitride film has abundant traps and is useful as a charge accumulation layer of a nonvolatile semiconductor memory device. A silicon nitride film having a lot of traps is formed by performing plasma CVD by using processing gases including a nitrogen gas and a gas of a compound formed of silicon atoms and chlorine atoms, and by setting a pressure in a processing container within a range between more than or equal to 0.1 Pa and less than or equal to 8 Pa, in a plasma CVD apparatus that performs film-formation by introducing microwaves in the processing container by using a planar antenna having a plurality of holes to generate plasma. | 08-16-2012 |
| 20120220138 | THIN FILM DEPOSITION APPARATUS AND METHOD FOR THE SAME - Assembly and method for depositing a thin film including: providing an expanding thermal plasma plume, including at least one chemical component to be deposited; designating a first and a second deposition zone within the plasma plume, such that the first and second deposition zones have a mutually different relative content of the chemical component; providing a substrate, and transporting said substrate through the plasma plume along a substrate transport path having a substrate transport path direction; and providing a mask that is at least partly disposed in the plasma plume and that shields a portion of the substrate transport path from being deposited on, wherein said shielded portion of the substrate transport path extends in the direction of the substrate transport path and bridges at least the first deposition zone, while it starts or terminates in the second deposition zone. | 08-30-2012 |
| 20130102161 | Method of Manufacturing Semiconductor Device, Cleaning Method, Substrate Processing Apparatus and Non-Transitory Computer-Readable Recording Medium - A method of manufacturing a semiconductor device includes forming a film on a substrate in a process chamber, and removing a deposit from at least a portion of an inside of the process chamber after forming the film, wherein removing the deposit includes performing a cycle a predetermined number of times, the cycle including a first process of supplying a first gas for etching the deposit into the process chamber and a second process of supplying a second gas into the process chamber so as to increase a pressure in the process chamber, the second gas being incapable of etching a member constituting the process chamber or having an etchability against the member lower than that of the first gas. | 04-25-2013 |
| 20130210241 | Precursors for Plasma Activated Conformal Film Deposition - A method of depositing a film on a substrate surface includes providing a substrate in a reaction chamber; selecting a silicon-containing reactant from a precursor group consisting of di-tert-butyl diazidosilane, bis(ethylmethylamido)silane, bis(diisopropylamino)silane, bis(tert-butylhydrazido)diethylsilane, tris(dimethylamido) silylazide, tris(dimethylamido)silylamide, ethylsilicon triazide, diisopropylaminosilane, and hexakis(dimethylamido)disilazane; introducing the silicon-containing reactant in vapor phase into the reaction chamber under conditions allowing the silicon-containing reactant to adsorb onto the substrate surface; introducing a second reactant in vapor phase into the reaction chamber while the silicon-containing reactant is adsorbed on the substrate surface, and wherein the second reactant is introduced without first sweeping the silicon-containing reactant out of the reaction chamber; and exposing the substrate surface to plasma to drive a reaction between the silicon-containing reactant and the second reactant on the substrate surface to form the film. | 08-15-2013 |
| 20130260576 | METHOD OF FORMING BORON-CONTAINING SILICON OXYCARBONITRIDE FILM AND METHOD OF FORMING SILICON OXYCARBONITRIDE FILM - According to an embodiment of the present disclosure a method of forming a boron-containing silicon oxycarbonitride film on a base is provided. The method includes forming a boron-containing film on the base, and forming the boron-containing silicon oxycarbonitride film by laminating a silicon carbonitride film and a silicon oxynitride film on the boron-containing film. | 10-03-2013 |
| 20140106577 | METHOD AND APPARATUS OF FORMING SILICON NITRIDE FILM - Provided is a method of forming a silicon nitride film on an object to be processed, which includes: supplying a silicon raw material gas into a processing chamber; and supplying a nitridant gas into the processing chamber, wherein supplying the silicon raw material gas includes an initial supply stage in which the silicon raw material gas is initially supplied and a late supply stage following the initial supply stage, wherein a first internal pressure of the processing chamber defined in the initial supply stage is lower than a second internal pressure of the processing chamber defined in the late supply stage. | 04-17-2014 |
| 20140141625 | Method for Forming Insulation Film Using Non-Halide Precursor Having Four or More Silicons - A method of forming an insulation film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: (i) adsorbing a non-excited non-halide precursor having four or more silicon atoms in its molecule onto a substrate placed in a reaction space; (ii) supplying an oxygen-free reactant to the reaction space without applying RF power so as to expose the precursor-adsorbed substrate to the reactant; and (iii) after step (ii), applying RF power to the reaction space while the oxygen-free reactant is supplied in the reaction space; and (iv) repeating steps (i) to (iii) as a cycle, thereby depositing an insulation film on the substrate. | 05-22-2014 |
| 20150050817 | METHOD OF PREVENTING VOLTAGE BREAKDOWN AT A SURFACE OF A SEMICONDUCTOR SUBSTRATE OF A SUPERJUNCTION SEMICONDUCTOR DEVICE - A superjunction semiconductor device is provided having at least one column of a first conductivity type and at least one column of a second conductivity type extending from a first main surface of a semiconductor substrate toward a second main surface of the semiconductor substrate opposed to the first main surface. The at least one column of the second conductivity type has a first sidewall surface proximate the at least one column of the first conductivity type and a second sidewall surface opposed to the first sidewall surface. A termination structure is proximate the second sidewall surface of the at least one column of the second conductivity type. The termination structure includes a layer of dielectric of an effective thickness and consumes about 0% of the surface area of the first main surface. Methods for manufacturing superjunction semiconductor devices and for preventing surface breakdown are also provided. | 02-19-2015 |
| 20150050818 | SUBSTRATE PROCESSING APPARATUS AND SEMICONDUCTOR DEVICE PRODUCING METHOD - Disclosed is a substrate processing apparatus, including: a processing chamber for processing a substrate; a substrate rotating mechanism for rotating the substrate; a gas supply unit for supplying gas to the substrate, at least two kinds of gases A and B being alternately supplied a plurality of times to form a desired film on the substrate; and a controller for controlling a rotation period of the substrate or a gas supply period defined as a time period between an instant when the gas A is made to flow and an instant when the gas A is made to flow next time such that the rotation period and the gas supply period are not brought into synchronization with each other at least while the alternate gas supply is carried out predetermined times. | 02-19-2015 |
| 20150099374 | Method and Apparatus of Forming Silicon Nitride Film - Provided is a method of forming a silicon nitride film on a surface to be processed of a target object, which includes: repeating a first process a first predetermined number of times, the process including supplying a silicon source gas containing silicon toward the surface to be processed and supplying a decomposition accelerating gas containing a material for accelerating decomposition of the silicon source gas toward the surface to be processed; performing a second process of supplying a nitriding gas containing nitrogen toward the surface to be processed a second predetermine number of times; and performing one cycle a third predetermined number of times, the one cycle being a sequence including the repetition of the first process and the performance of the second process to form the silicon nitride film on the surface to be processed. | 04-09-2015 |
| 20150104955 | DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS - Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as conformality and etch rate, are provided. One or more boron and/or carbon containing precursors can be decomposed on a substrate at a temperature of less than about 400° C. In some embodiments methods of depositing silicon nitride films comprising B and C are provided. A silicon nitride film can be deposited by a deposition process including an ALD cycle that forms SiN and a CVD cycle that contributes B and C to the growing film. | 04-16-2015 |
| 20190148128 | SELECTIVE DEPOSITION OF SILICON NITRIDE ON SILICON OXIDE USING CATALYTIC CONTROL | 05-16-2019 |
| 20190148397 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES | 05-16-2019 |
| 438792000 | Utilizing electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) | 47 |
| 20080286984 | SILICON-RICH LOW-HYDROGEN CONTENT SILICON NITRIDE FILM - In one embodiment, a method for forming a silicon nitride film is provided. The method includes providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate therein; flowing a gas mixture consisting of silane and nitrogen into the PECVD reactor; and forming a plasma in the PECVD reactor, whereby the silicon nitride film is deposited on the semiconductor substrate. | 11-20-2008 |
| 20080305648 | METHOD FOR FORMING INORGANIC SILAZANE-BASED DIELECTRIC FILM - A method of forming an inorganic silazane-based dielectric film includes: introducing a gas constituted by Si and H and a gas constituted by N and optionally H into a reaction chamber where an object is placed; controlling a temperature of the object at −50° C. to 50° C.; and depositing by plasma reaction a film constituted by Si, N, and H containing inorganic silazane bonds. | 12-11-2008 |
| 20090004887 | APPARATUS AND METHOD FOR DEPOSITION OF PROTECTIVE FILM FOR ORGANIC ELECTROLUMINESCENCE - In a film deposition apparatus which deposition a film through SWP-CVD, a substrate holder on which a substrate is to be placed is provided with cooling means, thereby inhibiting occurrence of an increase in the temperature of the substrate, which would otherwise be caused during deposition of a film. A coolant passage is formed in the substrate holder, and coolant delivered from a chiller is circulated through the coolant passage, thereby cooling the substrate holder. Further, grooves are formed in the surface of a cooling holder where a substrate is to be placed, and the substrate is cooled by a helium gas by causing the helium gas to flow through the grooves. | 01-01-2009 |
| 20090023301 | FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND METHOD OF COATING THE FILM DEPOSITION APPARATUS - A method of manufacturing a semiconductor device has supplying a first reactant gas into buffer chamber provided in a reaction chamber of the film deposition apparatus to form a first film over an inner wall surface of the buffer chamber, and supplying a second reactant gas into the reaction chamber to form a second film over a semiconductor substrate. | 01-22-2009 |
| 20090068854 | SILICON NITRIDE GAP-FILLING LAYER AND METHOD OF FABRICATING THE SAME - A method for fabricating a silicon nitride gap-filling layer is provided. A pre-multi-step formation process is performed to form a stacked layer constituting as a dense film on a substrate. Then, a post-single step deposition process is conducted to form a cap layer constituting as a sparse film on the stacked layer, wherein the cap layer has a thickness of at least 10% of the total film thickness. | 03-12-2009 |
| 20090124097 | METHOD OF FORMING NARROW FINS IN FINFET DEVICES WITH REDUCED SPACING THEREBETWEEN - A method of forming narrow fins in a substrate includes forming a sacrificial mandrel layer over the substrate; using a photolithographic process to pattern the mandrel layer so as to perform a plurality of mandrel features having an initial width greater than or equal to F and spacing therebetween of greater than or equal to F, wherein F corresponds to a minimum feature size associated with the photolithographic process; performing a thermal oxidation of sidewall surfaces of the mandrel features so as to form a plurality of oxide pillars, wherein the thermal oxidation consumes a portion of the mandrel material, and wherein the plurality of oxide pillars have both a width and a spacing therebetween that is less than F; removing remaining portions of the material; and transferring a pattern defined by the oxide pillars into the semiconductor substrate so as to form a plurality of fins having both a width and a spacing therebetween that is less than F. | 05-14-2009 |
| 20090137132 | DECREASING THE ETCH RATE OF SILICON NITRIDE BY CARBON ADDITION - Methods for forming silicon nitride hard masks are provided. The silicon nitride hard masks include carbon-doped silicon nitride layers and undoped silicon nitride layers. Carbon-doped silicon nitride layers that are deposited from a mixture comprising a carbon source compound, a silicon source compound, and a nitrogen source in the presence of RF power are provided. Also provided are methods of UV post-treating silicon nitride layers to provide silicon nitride hard masks. The carbon-doped silicon nitride layers and UV post-treated silicon nitride layers have desirable wet etch rates and dry etch rates for hard mask layers. | 05-28-2009 |
| 20090142935 | METHOD FOR FORMING SILAZANE-BASED DIELECTRIC FILM - A method of forming a dielectric film includes: introducing a source gas essentially constituted by Si, N, H, and optionally C and having at least one bond selected from Si—N, Si—Si, and Si—H into a reaction chamber where a substrate is placed; depositing a silazane-based film essentially constituted by Si, N, H, and optionally C on the substrate by plasma reaction at −50° C. to 50° C., wherein the film is free of exposure of a solvent constituted essentially by C, H, and optionally O; and heat-treating the silazane-based film on the substrate in a heat-treating chamber while introducing an oxygen-supplying source into the heat-treating chamber to release C from the film and increase Si—O bonds in the film. | 06-04-2009 |
| 20090163041 | LOW WET ETCH RATE SILICON NITRIDE FILM - The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure. | 06-25-2009 |
| 20090176380 | PLASMA TREATMENT METHOD AND PLASMA TREATMENT DEVICE - Provided are a plasma treatment method and a plasma treatment device capable of forming a silicon nitride film having high compressive stress. In the plasma treatment method for depositing the silicon nitride film on a process target substrate by use of plasma of raw material gas containing silicon and hydrogen and of nitrogen gas, ion energy for disconnecting nitrogen-hydrogen bonding representing a state of bonding between the hydrogen in the raw material gas and the nitrogen gas is applied to the process target substrate so as to reduce an amount of nitrogen-hydrogen bonding contained in the silicon nitride film. | 07-09-2009 |
| 20090191722 | Film formation method and apparatus for semiconductor process - A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner. | 07-30-2009 |
| 20090203228 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD - A plasma processing apparatus includes a process chamber configured to be vacuum-exhausted; a worktable configured to place a target substrate thereon inside the process chamber; a microwave generation source configured to generate microwaves; a planar antenna including a plurality of slots and configured to supply microwaves generated by the microwave generation source through the slots into the process chamber; a gas supply mechanism configured to supply a film formation source gas into the process chamber; and an RF power supply configured to apply an RF power to the worktable. The apparatus is preset to turn a nitrogen-containing gas and a silicon-containing gas supplied in the process chamber into plasma by the microwaves, and to deposit a silicon nitride film on a surface of the target substrate by use of the plasma, while applying the RF power to the worktable. | 08-13-2009 |
| 20090246973 | METHOD OF FORMING A STRESSED PASSIVATION FILM USING A NON-IONIZING ELECTROMAGNETIC RADIATION-ASSISTED OXIDATION PROCESS - A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing oxygen radicals formed by non-ionizing electromagnetic radiation induced dissociation of an oxygen-containing gas or an oxygen- and nitrogen-containing gas. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film. | 10-01-2009 |
| 20090246974 | METHOD OF FORMING A STRESSED PASSIVATION FILM USING A MICROWAVE-ASSISTED OXIDATION PROCESS - A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nitride film to a process gas containing an oxygen-containing or an oxygen- and nitrogen-containing gas excited by plasma induced dissociation based on microwave irradiation via a plane antenna member having a plurality of slots, wherein the plane antenna member faces the substrate surface containing the silicon nitride film. The method further includes heat-treating the oxygen-embedded silicon nitride film to form a stressed silicon oxynitride film. | 10-01-2009 |
| 20100029094 | Method and Apparatus for Forming a High Quality Low Temperature Silicon Nitride Layer - A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer. | 02-04-2010 |
| 20100184302 | Method of Forming Conformal Dielectric Film Having Si-N Bonds by PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate. | 07-22-2010 |
| 20100221925 | METHOD OF FORMING CONFORMAL DIELECTRIC FILM HAVING Si-N BONDS BY PECVD - A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor as a first precursor and a hydrocarbon gas as a second precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film doped with carbon and having Si—N bonds on the substrate. | 09-02-2010 |
| 20110086516 | METHOD OF DEPOSITING DIELECTRIC FILM HAVING Si-N BONDS BY MODIFIED PEALD METHOD - A method of forming dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a hydrogen-containing silicon precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the silicon precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration. | 04-14-2011 |
| 20110086517 | PROCESS FOR PRODUCING SILICON NITRIDE FILM, PROCESS FOR PRODUCING SILICON NITRIDE FILM LAMINATE, COMPUTER-READABLE STORAGE MEDIUM, AND PLASMA CVD DEVICE - Disclosed is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV. | 04-14-2011 |
| 20120009803 | Mixing Energized and Non-Energized Gases for Silicon Nitride Deposition - A dual channel gas distributor can simultaneously distribute plasma species of an first process gas and a non-plasma second process gas into a process zone of a substrate processing chamber. The gas distributor has a localized plasma box with a first inlet to receive a first process gas, and opposing top and bottom plates that are capable of being electrically biased relative to one another to define a localized plasma zone in which a plasma of the first process gas can be formed. The top plate has a plurality of spaced apart gas spreading holes to spread the first process gas across the localized plasma zone, and the bottom plate has a plurality of first outlets to distribute plasma species of the plasma of the first process gas into the process zone. A plasma isolated gas feed has a second inlet to receive the second process gas and a plurality of second outlets to pass the second process gas into the process zone. A plasma isolator is between the second inlet and second outlets to prevent formation of a plasma of the second process gas in the plasma isolated gas feed. | 01-12-2012 |
| 20120178268 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. | 07-12-2012 |
| 20120220139 | METHOD OF DEPOSITING DIELECTRIC FILM BY MODIFIED PEALD METHOD - A method of forming a film on a semiconductor substrate by plasma enhanced atomic layer deposition (PEALD), includes: introducing a nitrogen- and hydrogen-containing reactive gas and a rare gas into a reaction space inside which the semiconductor substrate is placed; introducing a precursor in pulses of less than 1.0-second duration into the reaction space wherein the reactive gas and the rare gas are introduced; exiting a plasma in pulses of less than 1.0-second duration immediately after the precursor is shut off; and maintaining the reactive gas and the rare gas as a purge of less than 2.0-second duration. | 08-30-2012 |
| 20120270413 | Silicon Nitride Film, A Semiconductor Device, A Display Device and a Method for Manufacturing a Silicon Nitride Film - The present invention provides a method for forming by plasma CVD a silicon nitride film that can be formed over heat-sensitive elements as well as an electroluminescent element and that has favorable barrier characteristics. Further, the present invention also provides a semiconductor device, a display device and a light-emitting display device formed by using the silicon nitride film. In the method for forming a silicon nitride film by plasma CVD, silane (SiH | 10-25-2012 |
| 20130072033 | PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into the processing chamber are brought into the plasma state, and at the time of depositing by using the plasma a silicon nitride film on the surface of the a substrate to be processed, stress to the silicon nitride film to be formed is controlled by the combination of the type and the processing pressure of the nitrogen containing gas. | 03-21-2013 |
| 20130189854 | METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM - Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor. | 07-25-2013 |
| 20140038429 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - In a low-temperature, a silicon nitride film having a low in-film chlorine (Cl) content and a high resistance to hydrogen fluoride (HF) is formed. The formation of the silicon nitride film includes (a) supplying a monochlorosilane (SiH | 02-06-2014 |
| 20140045345 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A protective insulation film covering a surface of a compound semiconductor region is formed to have a two-layer structure of a first insulation film and a second insulation film which have different properties. The first insulation film is a non-stoichiometric silicon nitride film while the second insulation film is a silicon nitride film in an almost stoichiometric state. | 02-13-2014 |
| 20140057459 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM - In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate | 02-27-2014 |
| 20140080321 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor containing a specific element and a halogen group to form a first layer and supplying a second precursor containing the specific element and an amino group to modify the first layer into a second layer. A temperature of the substrate is set such that a ligand containing the amino group is separated from the specific element in the second precursor, the separated ligand reacts with the halogen group in the first layer to remove the halogen group from the first layer, the separated ligand is prevented from being bonded to the specific element in the first layer, and the specific element from which the ligand is separated in the second precursor is bonded to the specific element in the first layer. | 03-20-2014 |
| 20140113457 | PLASMA ENHANCED ATOMIC LAYER DEPOSITION WITH PULSED PLASMA EXPOSURE - The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during the plasma exposure/conversion operation, the embodiments herein utilize a pulsed plasma during this operation to achieve a film with high quality sidewalls. Because conventional PEALD techniques result in films having high quality at the bottom and top of a feature, but low quality on the sidewalls, this increased sidewall quality in the disclosed methods corresponds to a film that is overall more uniform in quality compared to that achieved with conventional continuous wave plasma techniques. | 04-24-2014 |
| 20140141626 | METHOD FOR DEPOSITING A CHLORINE-FREE CONFORMAL SIN FILM - Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and/or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor. | 05-22-2014 |
| 20140242814 | METHOD FOR FORMING NITRIDE FILM - Disclosed is a method of forming a nitride film on an object to be processed (“processed object”). The method includes: exposing the processed object to dichlorosilane which is a The method includes a step (step (a)) of exposing the processed object to dichlorosilane which is a precursor gas and a step (step (b)) of exposing the processed object to plasma of a processing gas which includes an ammonia gas and a hydrogen gas after step (a). Alternatively, step (a) and step (b) may be alternately repeated and a step of removing dichlorosilane (step (c)) may be further provided between step (a) and step (b). | 08-28-2014 |
| 20140273527 | METHODS FOR FORMING SILICON NITRIDE THIN FILMS - The present invention relates to methods of forming silicon nitride thin films on a substrate in a reaction chamber by plasma enhanced atomic layer deposition (PEALD). Exemplary methods include the steps of (i) introducing an octahalotrisilane Si | 09-18-2014 |
| 20140273528 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
| 20140273529 | PEALD of Films Comprising Silicon Nitride - Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C. | 09-18-2014 |
| 20140273530 | Post-Deposition Treatment Methods For Silicon Nitride - Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film. | 09-18-2014 |
| 20150031218 | FILM FORMING PROCESS AND FILM FORMING APPARATUS - In a film forming apparatus ( | 01-29-2015 |
| 20150064932 | Method For Restoring Porous Surface Of Dielectric Layer By UV Light-Assisted ALD - A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration. | 03-05-2015 |
| 20150376789 | VERTICAL HEAT TREATMENT APPARATUS AND METHOD OF OPERATING VERTICAL HEAT TREATMENT APPARATUS - A vertical heat treatment apparatus includes: a gas supply part that supplies a film forming gas into a reaction chamber; and gas distribution adjusting members arranged above and below a region in which target substrates are disposed. The gas distribution adjusting members include a first plate-shaped member with convex and concave portions and a second plate-shaped member with convex and concave portions, the first plate-shaped member and the second plate-shaped member being arranged above and below each other, and the first plate-shaped member and the second plate-shaped member being arranged above a bottom plate of a substrate holding and supporting part and below a ceiling plate of a substrate holding and supporting part. The first plate-shaped member has a first surface area and the second plate-shaped member has a second surface area different from the first surface area. | 12-31-2015 |
| 20160172183 | FILM FORMING METHOD | 06-16-2016 |
| 20160203978 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM | 07-14-2016 |
| 438793000 | Organic reactant | 6 |
| 20130183835 | LOW TEMPERATURE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF CONFORMAL SILICON CARBON NITRIDE AND SILICON NITRIDE FILMS - Methods and apparatus for forming conformal silicon nitride films at low temperatures on a substrate are provided. The methods of forming a silicon nitride layer include performing a deposition cycle including flowing a processing gas mixture into a processing chamber having a substrate therein, wherein the processing gas mixture comprises precursor gas molecules having labile silicon to nitrogen, silicon to carbon, or nitrogen to carbon bonds, activating the precursor gas at a temperature between about 20° C. to about 480° C. by preferentially breaking labile bonds to provide one or more reaction sites along a precursor gas molecule, forming a precursor material layer on the substrate, wherein the activated precursor gas molecules bond with a surface on the substrate at the one or more reaction sites, and performing a plasma treatment process on the precursor material layer to form a conformal silicon nitride layer. | 07-18-2013 |
| 20140073144 | LOW COST FLOWABLE DIELECTRIC FILMS - A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N | 03-13-2014 |
| 20140273531 | Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES - Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). | 09-18-2014 |
| 20150099375 | Methods for Depositing Silicon Nitride Films - Described herein are methods for forming silicon nitride films. In one aspect, there is provided a method of forming a silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one organoaminosilane having a least one SiH | 04-09-2015 |
| 20150126045 | LOW TEMPERATURE SILICON NITRIDE FILMS USING REMOTE PLASMA CVD TECHNOLOGY - Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ). | 05-07-2015 |
| 20150147893 | Precursors for CVD Silicon Carbo-Nitride Films - Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula Si | 05-28-2015 |
| 438794000 | Organic reactant | 3 |
| 20100081293 | METHODS FOR FORMING SILICON NITRIDE BASED FILM OR SILICON CARBON BASED FILM - A method for depositing a silicon nitride based dielectric layer is provided. The method includes introducing a silicon precursor and a radical nitrogen precursor to a deposition chamber. The silicon precursor has a N—Si—H bond, N—Si—Si bond and/or Si—Si—H bond. The radical nitrogen precursor is substantially free from included oxygen. The radical nitrogen precursor is generated outside the deposition chamber. The silicon precursor and the radical nitrogen precursor interact to form the silicon nitride based dielectric layer. | 04-01-2010 |
| 20150111395 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - According to the present disclosure, a film containing a predetermined element, carbon and nitrogen is formed with high controllability of a composition thereof. A method of manufacturing a semiconductor device includes forming a film containing a predetermined element, carbon and nitrogen on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a first processing gas containing the predetermined element and a halogen element to the substrate, supplying a second processing gas composed of three elements of carbon, nitrogen and hydrogen to the substrate, and supplying a third processing gas containing carbon to the substrate. | 04-23-2015 |
| 20180025906 | SILICON CHALCOGENATE PRECURSORS, METHODS OF FORMING THE SILICON CHALCOGENATE PRECURSORS, AND RELATED METHODS OF FORMING SILICON NITRIDE AND SEMICONDUCTOR STRUCTURES | 01-25-2018 |
