| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438790000 | Organic reactant | 16 |
| 20080242115 | Semiconductor device and method for manufacturing semiconductor device - A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics. | 10-02-2008 |
| 20090053906 | Semiconductor Device Producing Method and Substrate Processing Apparatus - Disclosed is a producing method of a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber. | 02-26-2009 |
| 20090081886 | SYSTEM FOR THIN FILM DEPOSITION UTILIZING COMPENSATING FORCES - A process for depositing a thin film material on a substrate is disclosed, comprising simultaneously directing a series of gas flows from the output face of a delivery head of a thin film deposition system toward the surface of a substrate, and wherein the series of gas flows comprises at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material. A system capable of carrying out such a process is also disclosed. | 03-26-2009 |
| 20110223774 | REDUCED PATTERN LOADING USING BIS(DIETHYLAMINO)SILANE (C8H22N2Si) AS SILICON PRECURSOR - Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications. | 09-15-2011 |
| 20120190215 | FILM DEPOSITION METHOD AND FILM DEPOSITION APPARATUS - A disclosed film deposition method comprises alternately repeating an adsorption step and a reaction step with an interval period therebetween. The adsorption step includes opening a first on-off valve of a source gas supplying system for a predetermined time period thereby to supply a source gas to a process chamber, closing the first valve after the predetermined time period elapses, and confining the source gas within the process tube, thereby allowing the source gas to be adsorbed on an object to be processed, while a third on-off valve of a vacuum evacuation system is closed. The reaction step includes opening a second on-off valve of a reaction gas supplying system thereby to supply a reaction gas to the process chamber, thereby allowing the source gas and the reaction gas to react with each other thereby to produce a thin film on the object to be processed. | 07-26-2012 |
| 20120202359 | Method of Increasing Deposition Rate of Silicon Dioxide on a Catalyst - Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide/silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of oxygen and nitrogen to convert the organoaluminum layer to a porous aluminum oxide layer, and a silanol precursor to form a thick layer of silicon dioxide over the porous oxide layer. The process provides an increased rate of deposition of the silicon dioxide, with each cycle producing a thick layer of silicon dioxide of about | 08-09-2012 |
| 20130295779 | HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS - Composition(s) and atomic layer deposition (ALD) process(es) for the formation of a silicon oxide containing film at one or more deposition temperature of about 500° C. is disclosed. In one aspect, the composition and process use one or more silicon precursors selected from compounds having the following formulae I, II, described and combinations thereof | 11-07-2013 |
| 20130330937 | Process for Producing Silicon and Oxide Films from Organoaminosilane Precursors - A method for depositing a silicon containing film on a substrate using an organoaminosilane is described herein. The organoaminosilanes are represented by the formulas: | 12-12-2013 |
| 20140057458 | METHOD FOR FORMING SILICON OXIDE FILM OF SEMICONDUCTOR DEVICE - A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved. | 02-27-2014 |
| 20140087568 | METHOD OF CLEANING, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of cleaning an interior of a process chamber by supplying a cleaning gas into the process chamber after a process of forming a thin film on a substrate in the process chamber is performed, including alternately repeating changing a pressure in the process chamber from a first pressure range to a second pressure range, and changing the pressure in the process chamber from the second pressure range to the first pressure range. In this method, when the pressure in the process chamber is changed to the first pressure range, the pressure in the process chamber is changed to the first pressure range without being maintained at the second pressure range, and when the pressure in the process chamber is changed to the second pressure range, the pressure in the process chamber is changed to the second pressure range without being maintained at the first pressure range. | 03-27-2014 |
| 20150024608 | Organoaminodisilane Precursors and Methods for Depositing Films Comprising Same - Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: | 01-22-2015 |
| 20150044883 | COMPOSITION FOR FORMING SILICA BASED INSULATING LAYER, SILICA BASED INSULATING LAYER AND METHOD FOR MANUFACTURING SILICA BASED INSULATING LAYER - A composition for forming a silica-based insulation layer, a silica-based insulation layer, and a method of manufacturing the silica-based insulation layer, the composition including a solvent; and an organosilane-based condensation polymerization product that includes a structural unit represented by the following Chemical Formula 1: | 02-12-2015 |
| 20150056822 | COMPOSITIONS AND METHODS USING SAME FOR FLOWABLE OXIDE DEPOSITION - Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds. | 02-26-2015 |
| 20150126044 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward. | 05-07-2015 |
| 20150303056 | CONFORMAL DEPOSITION OF SILICON CARBIDE FILMS - Disclosed are methods and systems for providing silicon carbide films. A layer of silicon carbide can be provided under process conditions that employ one or more silicon-containing precursors that have one or more silicon-hydrogen bonds and/or silicon-silicon bonds. The silicon-containing precursors may also have one or more silicon-oxygen bonds and/or silicon-carbon bonds. One or more radical species in a substantially low energy state can react with the silicon-containing precursors to form the silicon carbide film. The one or more radical species can be formed in a remote plasma source. | 10-22-2015 |
| 20160099145 | COMPOSITION FOR FORMING SILICA LAYER, SILICA LAYER, AND ELECTRONIC DEVICE - A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer. | 04-07-2016 |
