Class / Patent application number | Description | Number of patent applications / Date published |
438788000 | Using electromagnetic or wave energy (e.g., photo-induced deposition, plasma, etc.) | 34 |
20080233765 | Method for enhancing adhesion between layers - A novel method for enhancing interface adhesion between adjacent dielectric layers, particularly between an etch stop layer and an overlying dielectric layer having a low dielectric constant (k) in the formation of metal interconnects during the fabrication of integrated circuits on semiconductor wafer substrates. The method may include providing a substrate, providing an etch stop layer on the substrate, providing an oxygen-rich dielectric pre-layer on the etch stop layer and providing a major dielectric layer on the oxygen-rich dielectric pre-layer. Metal interconnects are then formed in the dielectric layers. The oxygen-rich dielectric pre-layer between the etch stop layer and the upper dielectric layer prevents or minimizes peeling and cracking of the layers induced by stresses that are caused by chemical mechanical planarization of metal layers and/or chip packaging. | 09-25-2008 |
20080293257 | DUAL LINER CAPPING LAYER INTERCONNECT STRUCTURE - A high tensile stress capping layer on Cu interconnects in order to reduce Cu transport and atomic voiding at the Cu/dielectric interface. The high tensile dielectric film is formed by depositing multiple layers of a thin dielectric material, each layer being under approximately 50 angstroms in thickness. Each dielectric layer is plasma treated prior to depositing each succeeding dielectric layer such that the dielectric cap has an internal tensile stress. | 11-27-2008 |
20090029564 | PLASMA TREATMENT APPARATUS AND PLASMA TREATMENT METHOD - In a plasma oxidation treatment apparatus | 01-29-2009 |
20090035952 | METHODS FOR LOW TEMPERATURE OXIDATION OF A SEMICONDUCTOR DEVICE - Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a plasma reactor, the chamber having an ion generation region remote from the substrate support; introducing a process gas into the chamber, the process gas comprising at least one of hydrogen (H | 02-05-2009 |
20090068853 | IMPURITY CONTROL IN HDP-CVD DEP/ETCH/DEP PROCESSES - Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process. | 03-12-2009 |
20090088002 | METHOD OF FABRICATING A NITROGENATED SILICON OXIDE LAYER AND MOS DEVICE HAVING SAME - A method for fabricating a nitrogen-containing dielectric layer and semiconductor device including the dielectric layer in which a silicon oxide layer is formed on a substrate, such that an interface region resides adjacent to substrate and a surface region resides opposite the interface region. Nitrogen is introduced into the silicon oxide layer by applying a nitrogen plasma. After applying nitrogen plasma, the silicon oxide layer is annealed. The processes of introducing nitrogen into the silicon oxide layer and annealing the silicon oxide layer are repeated to create a bi-modal nitrogen concentration profile in the silicon oxide layer. In the silicon oxide layer, the peak nitrogen concentrations are situated away from the interface region and at least one of the peak nitrogen concentrations is situated in proximity to the surface region. A method for fabricating a semiconductor device is incorporating the nitrogen-containing silicon oxide layers also disclosed. | 04-02-2009 |
20090093134 | SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD FOR CURING MATERIALS WITH UV LIGHT - Low dielectric constant materials are cured in a process chamber during semiconductor processing. The low dielectric constant materials are cured by irradiation with UV light. The atmosphere in the process chamber has a CO | 04-09-2009 |
20090104789 | METHOD AND SYSTEM FOR IMPROVING DIELECTRIC FILM QUALITY FOR VOID FREE GAP FILL - A method of forming a silicon oxide layer on a substrate. The method includes providing a substrate and forming a first silicon oxide layer overlying at least a portion of the substrate, the first silicon oxide layer including residual water, hydroxyl groups, and carbon species. The method further includes exposing the first silicon oxide layer to a plurality of silicon-containing species to form a plurality of amorphous silicon components being partially intermixed with the first silicon oxide layer. Additionally, the method includes annealing the first silicon oxide layer partially intermixed with the plurality of amorphous silicon components in an oxidative environment to form a second silicon oxide layer on the substrate. At least a portion of amorphous silicon components are oxidized to become part of the second silicon oxide layer and unreacted residual hydroxyl groups and carbon species in the second silicon oxide layer are substantially removed. | 04-23-2009 |
20090104790 | Methods for Forming a Dielectric Layer Within Trenches - A method for forming a semiconductor structure includes reacting a silicon precursor and an atomic oxygen or nitrogen precursor at a processing temperature of about 150° C. or less to form a silicon oxide or silicon-nitrogen containing layer over a substrate. The silicon oxide or silicon-nitrogen containing layer is ultra-violet (UV) cured within an oxygen-containing environment. | 04-23-2009 |
20090104791 | Methods for Forming a Silicon Oxide Layer Over a Substrate - A method of depositing a silicon oxide layer over a substrate includes providing a substrate to a deposition chamber. A first silicon-containing precursor, a second silicon-containing precursor and a NH | 04-23-2009 |
20090104792 | Semiconductor Device Producing Method - Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10 | 04-23-2009 |
20090117751 | METHOD FOR FORMING RADICAL OXIDE LAYER AND METHOD FOR FORMING DUAL GATE OXIDE LAYER USING THE SAME - A method for fabricating a radical oxide layer includes providing a substrate, forming an oxide layer over the substrate through a radical oxidation process, and performing a thermal treatment on the oxide layer by using oxygen (O | 05-07-2009 |
20090156017 | METHOD FOR FORMING DIELECTRIC FILM USING SILOXANE-SILAZANE MIXTURE - A method of forming a dielectric film, includes: introducing a siloxane gas essentially constituted by Si, O, C, and H and a silazane gas essentially constituted by Si, N, H, and optionally C into a reaction chamber where a substrate is placed; depositing a siloxane-based film including Si—N bonds on the substrate by plasma reaction; and annealing the siloxane-based film on the substrate in an annealing chamber to remove Si—N bonds from the film. | 06-18-2009 |
20090170346 | LOW TEMPERATURE POLYSILICON OXIDE PROCESS FOR HIGH-K DIELECTRIC/METAL GATE STACK - A method for preventing oxidation in a high-k dielectric/metal gate stack in the manufacture of an integrated circuit device is disclosed. In a detailed embodiment, a PMOS region stack has nitrided hafnium silicide, tungsten, tantalum nitride and polysilicon layers. An NMOS region stack has nitrided hafnium silicide, tungsten silicide, tantalum nitride and polysilicon layers. A thin polysilicon layer deposited over the stacks is converted to an oxide using a low temperature ultraviolet ozone oxidation process or a plasma nitridation using decoupled plasma nitridation or NH | 07-02-2009 |
20100041245 | HDP-CVD PROCESS, FILLING-IN PROCESS UTILIZING HDP-CVD, AND HDP-CVD SYSTEM - An HDP-CVD process is described, including a deposition step conducted in an HDP-CVD chamber and a pre-heating step that is performed outside of the HDP-CVD chamber before the deposition step and pre-heats a wafer to a temperature higher than room temperature and required in the HDP-CVD process deposition step. | 02-18-2010 |
20100048033 | Process And Apparatus For Forming Oxide Film, And Electronic Device Material - An oxide film-forming apparatus, comprising: a process chamber for disposing an electronic device substrate at a predetermined position; water vapor supply means for supplying water vapor into the process chamber; and plasma exciting means for activating the water vapor with plasma, whereby the surface of the electronic device substrate can be irradiated with the plasma based on the water vapor. | 02-25-2010 |
20100173501 | SEMICONDUCTOR DEVICE PRODUCING METHOD - Disclosed is a producing method of a semiconductor device, including: loading at least one substrate formed on a surface thereof with a tungsten film into a processing chamber; and forming a silicon oxide film on the surface of the substrate which includes the tungsten film by alternately repeating following steps a plurality of times: supplying the processing chamber with a first reaction material including a silicon atom while heating the substrate at 400° C.; and supplying the processing chamber with hydrogen and water which is a second reaction material while heating the substrate at 400° C. at a ratio of the water with respect to the hydrogen of 2×10 | 07-08-2010 |
20100297854 | HIGH THROUGHPUT SELECTIVE OXIDATION OF SILICON AND POLYSILICON USING PLASMA AT ROOM TEMPERATURE - Methods of fabricating an oxide layer on a semiconductor structure are provided herein. In some embodiments, a method of selectively forming an oxide layer on a semiconductor structure includes providing a substrate having one or more metal-containing layers and one or more non metal-containing layers to a substrate support in a plasma reactor; introducing a first process gas into the plasma reactor, wherein the first process gas comprises hydrogen (H | 11-25-2010 |
20110034039 | FORMATION OF SILICON OXIDE USING NON-CARBON FLOWABLE CVD PROCESSES - A method of forming a silicon oxide layer is described. The method may include the steps of mixing a carbon-free silicon-and-nitrogen containing precursor with a radical precursor, and depositing a silicon-and-nitrogen containing layer on a substrate. The silicon-and-nitrogen containing layer is then converted to the silicon oxide layer. | 02-10-2011 |
20110151679 | FILM FORMATION METHOD FOR FORMING SILICON-CONTAINING INSULATING FILM - A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism. | 06-23-2011 |
20110230061 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes the steps of carrying a substrate in a processing chamber, bringing the processing chamber into a state at a first pressure by supplying a silicon compound gas which contains carbon and hydrogen into the processing chamber, forming a silicon oxide film on the substrate by irradiating a UV light to the silicon compound gas supplied into the processing chamber in the state kept at the first pressure, and decompression process to bring the processing chamber into a state at a second pressure lower than the first pressure. This makes it possible to form the dense silicon oxide film in the trench with high aspect ratio and small width. | 09-22-2011 |
20120003842 | METHOD FOR FORMING SILICON OXIDE FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - There is provided a silicon oxide film forming method including forming a silicon oxide film on a processing target substrate W by supplying a silicon compound gas, an oxidizing gas and a rare gas into a processing chamber | 01-05-2012 |
20120021613 | FINISHING METHOD FOR A SILICON ON INSULATOR SUBSTRATE - The invention relates to a finishing method for a silicon-on-insulator (SOI) substrate that includes an oxide layer buried between an active silicon layer and a support layer of silicon. The method includes applying the following steps in succession: a first rapid thermal annealing (RTA) of the SOI substrate; a sacrificial oxidation of the active silicon layer of the substrate conducted to remove a first oxide thickness; a second RTA of the substrate; and a second sacrificial oxidation of the active silicon layer conducted to remove a second oxide thickness that is thinner than the first oxide thickness. | 01-26-2012 |
20120071006 | STARTING MATERIAL FOR USE IN FORMING SILICON OXIDE FILM AND METHOD FOR FORMING SILICON OXIDE FILM USING SAME - Disclosed is a starting material for use in forming a silicon oxide film on a substrate by the CVD method, comprising a siloxane compound having a carbonyl group, wherein the starting material is decomposed by applying energy, thereby releasing CO and producing a product having no dangling bond in the chemical structure, and the product contributes to the formation of the film. As a result, a silicon oxide film having a favorable step coverage is formed. | 03-22-2012 |
20120108079 | Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making - Atomic layer deposition methods of forming one or more of a mixed silicon oxide/silicon nitride film or a mixed silicon oxide/silicon film are described in which the substrate is exposed sequentially to a first reactant gas comprising a silicon species and a second reactant gas comprising an oxygen species to form at least a partial layer of silicon oxide on the substrate during a first atomic layer deposition process. The substrate is then exposed sequentially to a third reactant gas comprising a silicon species and a fourth reactant gas comprising a species sufficient to form at least a partial layer of one or more of silicon nitride or silicon on the substrate during a second atomic layer deposition process. The process can be repeated multiple times to deposit one or more of a mixed silicon oxide/silicon nitride film and a mixed silicon oxide/silicon film. | 05-03-2012 |
20130115783 | METHOD FOR DEPOSITING CYCLIC THIN FILM - Provided is a method of depositing a cyclic thin film that can provide excellent film properties and step coverage. The method comprises the steps of forming a silicon thin film by repeating a silicon deposition step for depositing silicon on a substrate by injecting a silicon precursor into a chamber into which the substrate is loaded and a first purge step for removing a non-reacted silicon precursor and a reacted byproduct from the chamber; and forming the insulating film including silicon from the silicon thin film by forming a plasma atmosphere into the chamber. | 05-09-2013 |
20130183834 | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE - Methods and apparatus for processing a substrate are provided. In some embodiments, a method of processing a substrate disposed in a process chamber includes performing a process on a substrate disposed in a process chamber having a substrate support ring configured to support the substrate and a reflector plate disposed proximate a back side of the substrate; providing a first gas comprising one of an oxygen containing gas or a nitrogen containing gas to a back side of the substrate via one or more through holes disposed in the reflector plate while performing the process on the substrate; and maintaining the process chamber at a first pressure proximate a top surface of the substrate and at a second pressure proximate the bottom surface of the substrate, wherein the first pressure is greater than the second pressure sufficiently to prevent dislodgement of the substrate from the substrate support ring during processing. | 07-18-2013 |
20130288486 | METHOD OF DEPOSITING SILICONE DIOXIDE FILMS - The invention relates to a method of depositing silicon dioxide films using plasma enhanced chemical vapour deposition (PECVD) and more particularly using tetraethyl orthosilicate (TEOS). The process can be carried out at standard temperatures and also at low temperatures which is useful for manufacturing wafers with through silicon vias. | 10-31-2013 |
20130316547 | MITIGATION OF SILICIDE FORMATION ON WAFER BEVEL - A method for processing a wafer with a wafer bevel that surrounds a central region is provided. The wafer is placed in a bevel plasma processing chamber. A protective layer is deposited on the wafer bevel without depositing the protective layer over the central region. The wafer is removed from the bevel plasma processing chamber. The wafer is further processed. | 11-28-2013 |
20220139701 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING PLASMA-ENHANCED ATOMIC LAYER DEPOSITION - A method for manufacturing a semiconductor device using a plasma-enhanced atomic layer deposition is provided. A substrate comprising a silicon substrate and a first oxide layer is provided. Stacked structures are deposited on the substrate, which comprises a dielectric layer and a conductive layer. The stacked structures are etched to form at least one trench. A second oxide layer is deposited on the stacked structures and the trench using a plasma-enhanced atomic layer deposition apparatus includes a chamber, an upper electrode including nozzles, and a lower electrode. The upper electrode is connected to a first radio-frequency power device configured to generate plasma and a second radio-frequency power device configured to clean the nozzles. The lower electrode is connected to a third radio-frequency power device. A high resistance layer is deposited on the second oxide layer and a low resistance layer is deposited on the high resistance layer. | 05-05-2022 |
438789000 | Organic reactant | 4 |
20110201212 | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - In a method for producing a semiconductor device, two or more kinds of organic siloxane compound materials each having a cyclic SiO structure as a main skeleton and having different structures are mixed and thereafter vaporized. Alternatively, those two or more kinds of organic siloxane compound materials are mixed and vaporized simultaneously to produce a vaporized gas. Then, the vaporized gas is transported to a reaction furnace together with a carrier gas. Then, in the reaction furnace, a porous insulating layer is formed by the plasma CVD method or the plasma polymerization method using the vaporized gas. | 08-18-2011 |
20130260575 | SILICON PRECURSORS AND COMPOSITIONS COMPRISING SAME FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS - A chemical vapor deposition method for producing a porous organosilica glass film comprising: introducing into a reaction chamber gaseous reagents comprising a porogenated precursor; optionally a structure former precursor selected from the group consisting an organosilane, an organosiloxane, and combinations thereof; and optionally a porogen precursor; applying an energy source to the gaseous reagents in the chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen; and removing from the preliminary film at least a portion of the porogen to provide the porous film with pores and a dielectric constant less than 2.6. | 10-03-2013 |
20140357091 | SEMICONDUCTOR FABRICATION PROCESS - Semiconductor fabrication processes are described. An embodiment of the semiconductor fabrication process includes providing a layer formed by decomposition of dimethylsilane through chemical vapor deposition, the layer being applied by a fluid material, and then positioning the layer in a system for producing a semiconductor product. Additionally or alternatively, the semiconductor product is produced and/or the layer is on a substrate. | 12-04-2014 |
20150056821 | Method for Forming SiOCH Film Using Organoaminosilane Annealing - A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film. | 02-26-2015 |