Class / Patent application number | Description | Number of patent applications / Date published |
438785000 | Insulative material is compound of refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof) | 79 |
20080220618 | ZIRCONIUM SILICON OXIDE FILMS - Electronic apparatus, systems, and methods include structures having a dielectric layer containing zirconium silicon oxide film. The zirconium silicon oxide film may be disposed in an integrated circuit, as well as in a variety of other electronic devices. Additional apparatus, systems, and methods are disclosed. | 09-11-2008 |
20080227303 | SYSTEMS AND METHODS FOR FORMING TANTALUM OXIDE LAYERS AND TANTALUM PRECURSOR COMPOUNDS - A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example. | 09-18-2008 |
20080233764 | Formation of Gate Insulation Film - A method of forming a gate insulation film | 09-25-2008 |
20080242114 | THERMAL ANNEAL METHOD FOR A HIGH-K DIELECTRIC - A method of manufacturing a semiconductor device is provided. In one embodiment, the method provides for the formation, over a substrate, of a dielectric layer having a high dielectric constant. This dielectric layer may be exposed to a nitrogen plasma after which it may be annealed in a hydrogen containing ambient. | 10-02-2008 |
20080261412 | APPARATUS AND METHOD FOR ATOMIC LAYER DEPOSITION - The embodiments provide apparatus and methods of depositing conformal thin film on interconnect structures by providing processes and systems using an atomic layer deposition (ALD). More specifically, each of the ALD systems includes a proximity head that has a small reaction volume right above an active process region of the substrate surface. The proximity head small amount of reactants and purging gas to be distributed and pumped away from the small reaction volume between the proximity head and the substrate in relatively short periods, which increases the through-put. In an exemplary embodiment, a proximity head for dispensing reactants and purging gas to deposit a thin film by atomic layer deposition (ALD) is provided. The proximity head is configured to sequentially dispensing a reactant gas and a purging gas to deposit a thin ALD film under the proximity head. The proximity head covers an active process region of a substrate surface. The proximity head also includes at least one vacuum channel to pull excess reactant gas, purging gas, or deposition byproducts from a reaction volume between a surface of the proximity head facing the substrate and the substrate. The proximity includes a plurality of sides, each side being configured to dispense either a reactant gas or a purging gas on the substrate surface underneath the proximity head. Each side has at least one vacuum channel. | 10-23-2008 |
20080261413 | PRETREATMENT PROCESSES WITHIN A BATCH ALD REACTOR - Embodiments of the invention provide methods for forming a hafnium material on a substrate within a processing chamber. In one embodiment, a method is provided which includes exposing the substrate within the processing chamber to a first oxidizing gas during a pretreatment process, exposing the substrate sequentially to a second oxidizing gas and a deposition gas during an atomic layer deposition (ALD) cycle, wherein the second oxidizing gas contains water and the deposition gas contains a hafnium amino compound, and repeating the ALD cycle to form a hafnium-containing layer having a thickness within a range from about 5 Å to about 300 Å. In one example, the first oxidizing gas contains an O | 10-23-2008 |
20080274625 | METHODS OF FORMING ELECTRONIC DEVICES CONTAINING Zr-Sn-Ti-O FILMS - A dielectric film containing Zr—Sn—Ti—O and methods of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO | 11-06-2008 |
20080286983 | DEPOSITION OF TA- OR NB-DOPED HIGH-K FILMS - Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes. | 11-20-2008 |
20080293256 | Method for forming bismuth titanium silicon oxide thin film - A bismuth titanium silicon oxide having a pyrochlore phase, a thin film formed of the bismuth titanium silicon oxide, a method for forming the bismuth-titanium-silicon oxide thin film, a capacitor and a transistor for a semiconductor device including the bismuth-titanium-silicon oxide thin film, and an electronic device employing the capacitor and/or the transistor are provided. The bismuth titanium silicon oxide has good dielectric properties and is thermally and chemically stable. The bismuth-titanium-silicon oxide thin film can be effectively used as a dielectric film of a capacitor or as a gate dielectric film of a transistor in a semiconductor device. Various electronic devices having good electrical properties can be manufactured using the capacitor and/or the transistor having the bismuth-titanium-silicon oxide film. | 11-27-2008 |
20080305646 | Atomic layer deposition - An atomic layer deposition with hydroxylation pre-treatment is provided. The atomic layer deposition comprises the steps of (a) performing a hydroxylation pre-treatment on a silicon substrate to create a predetermined number of hydroxyl groups thereon; (b) performing a precursor pulse on the pre-treated silicon substrate, wherein the precursor react with the hydroxyl groups, forming a layer; (c) purging the silicon substrate with an inert carrier gas; (d) performing a water pulse on the layer sufficiently so as to create a predetermined number of hydroxyl groups thereon; (e) purging the layer with the inert carrier gas; and (f) repeating steps (b)˜(e) until the atomic layer deposition is completed. Each layer overlying the silicon substrate has a minimum of 70 percent surface hydroxyl groups. | 12-11-2008 |
20080318442 | Semiconductor device manufacturing method and substrate processing apparatus - The present invention has an object of providing a substrate processing apparatus and a semiconductor device manufacturing method that can prevent adverse effects on electrical characteristics and provide a thinner EOT. | 12-25-2008 |
20080318443 | Plasma enhanced cyclic deposition method of metal silicon nitride film - The present invention relates to a method for forming a metal silicon nitride film according to a cyclic film deposition under plasma atmosphere with a metal amide, a silicon precursor, and a nitrogen source gas as precursors. The deposition method for forming a metal silicon nitride film on a substrate comprises steps of: pulsing a metal amide precursor; purging away the unreacted metal amide; introducing nitrogen source gas into reaction chamber under plasma atmosphere; purging away the unreacted nitrogen source gas; pulsing a silicon precursor; purging away the unreacted silicon precursor; introducing nitrogen source gas into reaction chamber under plasma atmosphere; and purging away the unreacted nitrogen source gas. | 12-25-2008 |
20090004886 | METHOD OF MANUFACTURING AN INSULATING FILM CONTAINING HAFNIUM - A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen. | 01-01-2009 |
20090035949 | METHOD OF DEPOSITING RARE EARTH OXIDE THIN FILMS - The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds or rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar. | 02-05-2009 |
20090042405 | Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode - A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part that is formed in the trench and a second part. After a first metal layer with a first workfunction is formed on the first and second parts of the second dielectric layer, part of the first metal layer is converted into a second metal layer with a second workfunction. | 02-12-2009 |
20090053905 | METHOD OF FORMING DIELECTRIC LAYER OF SEMICONDUCTOR MEMORY DEVICE - The invention relates to a method of forming a dielectric layer of a semiconductor memory device. According to an aspect of the invention, the method includes forming a high-k layer over a semiconductor substrate, and performing a plasma treating the high-k layer at a temperature less than the temperature in which the high-k layer would crystallize. | 02-26-2009 |
20090170344 | METHOD FOR FORMING DIELECTRIC FILMS - A method for forming dielectric films including metal nitride silicate on a silicon substrate, comprises a first step of depositing a film containing metal and silicon on a silicon substrate in a non-oxidizing atmosphere using a sputtering method; a second step of forming a film containing nitrogen, metal and silicon by nitriding the film containing metal and silicon; and a third step of forming a metal nitride silicate film by oxidizing the film containing nitrogen, metal and silicon. | 07-02-2009 |
20090181549 | METHOD FOR FORMING A GATE INSULATING FILM - In formation of a gate insulating film made of a high dielectric constant metal silicate, atomic layer deposition (ALD) is performed by setting exposure time to a precursor containing a metal or the like to saturation time of a deposition rate by a surface adsorption reaction and by setting exposure time to an oxidizing agent to time required for a composition of a metal oxide film to reach 97% or more of a stoichiometric value. | 07-16-2009 |
20090191721 | SEQUENTIAL TANTALUM-NITRIDE DEPOSITION - An iPVD system is programmed to deposit uniform material, such as barrier material, into high aspect ratio nano-size features on semiconductor substrates using a multi-step process within a vacuum chamber which enhances the sidewall coverage compared to the field and bottom coverage(s) while minimizing or eliminating overhang. | 07-30-2009 |
20090246972 | METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM - Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds. | 10-01-2009 |
20090311878 | METHOD FOR DEPOSITING A DIELECTRIC MATERIAL - A depositing method for a dielectric material is provided, where the dielectric material has the first and the second primary elements, and a single precursor includes the first and the second primary elements. The depositing method includes pulsing the single precursor, purging a redundant part of the single precursor, pulsing an oxidant for oxidizing the single precursor, and purging a redundant part of the oxidant. | 12-17-2009 |
20090311879 | METHOD OF FORMING HIGH-K DIELECTRIC FILMS BASED ON NOVEL TITANIUM, ZIRCONIUM, AND HAFNIUM PRECURSORS AND THEIR USE FOR SEMICONDUCTOR MANUFACTURING - A method of forming on at least one support at least one metal containing dielectric films having the formula (M | 12-17-2009 |
20100041244 | HAFNIUM TANTALUM OXYNITRIDE DIELECTRIC - Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a hafnium tantalum oxynitride film. | 02-18-2010 |
20100048032 | PROCESS GAS DELIVERY FOR SEMICONDUCTOR PROCESS CHAMBER - Methods and apparatus for a gas delivery assembly are provided herein. In some embodiments, the gas delivery assembly includes a gas inlet funnel having a first volume and one or more gas conduits; each gas conduit having an inlet and an outlet for facilitating the flow of a gas therethrough and into the first volume, wherein each gas conduit has a second volume less than the first volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet, wherein the second cross-section is non-circular. In some embodiments, each conduit has a longitudinal axis that intersects a central axis of the gas inlet funnel. | 02-25-2010 |
20100062614 | IN-SITU CHAMBER TREATMENT AND DEPOSITION PROCESS - Embodiments of the invention provide a method for treating the inner surfaces of a processing chamber and depositing a material on a during a vapor deposition process, such as atomic layer deposition (ALD) or by chemical vapor deposition (CVD). In one embodiment, the inner surfaces of the processing chamber and the substrate may be exposed to a reagent, such as a hydrogenated ligand compound during a pretreatment process. The hydrogenated ligand compound may be the same ligand as a free ligand formed from the metal-organic precursor used during the subsequent deposition process. The free ligand is usually formed by hydrogenation or thermolysis during the deposition process. In one example, the processing chamber and substrate are exposed to an alkylamine compound (e.g., dimethylamine) during the pretreatment process prior to conducting the vapor deposition process which utilizes a metal-organic chemical precursor having alkylamino ligands, such as pentakis(dimethylamino) tantalum (PDMAT). | 03-11-2010 |
20100075510 | Method for Pulsed plasma deposition of titanium dioxide film - A method for pulsed plasma deposition of titanium dioxide film is revealed. The method includes the steps of: (1) set a substrate into a chamber and the chamber is pumped down to a certain vacuum level. (2) Introduce titanium tetraisopropoxide gas and gas containing oxygen into the chamber and a RF (radio frequency) pulse power supply is turned on to create a glow discharge for generating pulsed plasma. (3) A layer of titanium dioxide film is deposited on the substrate by the pulsed plasma. The TiO | 03-25-2010 |
20100081292 | GAS TREATMENT METHOD AND COMPUTER READABLE STORAGE MEDIUM - A gas delivery apparatus comprises: a chamber surrounding a substrate to be processed; a showerhead disposed within the chamber; and gas supply means supplying a gas comprising a mixture of NH | 04-01-2010 |
20100167554 | METHODS FORMING HIGH DIELECTRIC TARGET LAYER - In a method of forming a target layer having a uniform composition of constituent materials, a first precursor including a first central atom and a ligand is chemisorbed on a first reaction site of an object. The ligand or the first central atom is then removed to form a second reaction site. A second precursor including a second central atom is then chemisorbed on the second reaction site. | 07-01-2010 |
20100167555 | METHOD IN DEPOSITING METAL OXIDE MATERIALS - The present invention relates to a method for enhancing uniformity of metal oxide coatings formed by Atomic Layer Deposition (ALD) or ALD-type processes. Layers are formed using alternating pulses of metal halide and oxygen-containing precursors, preferably water, and purging when necessary. An introduction of modificator pulses following the pulses of the oxygen-containing precursor affects positively on layer uniformity, which commonly exhibits gradients, particularly in applications with closely arranged substrates. In particular, improvement in layer thickness uniformity is obtained. According to the invention, alcohols having one to three carbon atoms can be used as the modificator. | 07-01-2010 |
20100279515 | ATOMIC LAYER DEPOSITION - A method for forming an atomic deposition layer is provided, which includes: (a) performing a first water pulse on a substrate; (b) performing a precursor pulse on the hydroxylated substrate, wherein the precursor reacts with the hydroxyl groups and forms a layer; (c) purging the substrate with an inert carrier gas; (d) exposing the layer to a second water pulse for at least about 3 seconds so that the layer has a minimum of 70 percent of surface hydroxyl groups thereon; (e) purging the layer with the inert carrier gas; and (f) repeating steps (b) to (e) to form a resultant atomic deposition layer. | 11-04-2010 |
20110014797 | METHOD FOR Sr-Ti-O-BASED FILM FORMATION AND STORAGE MEDIUM - A film is formed so that the atomic numbers ratio of Sr to Ti, i.e., Sr/Ti, in the film is not less than 1.2 and not more than 3. The film is then annealed in an atmosphere containing not less than 0.001% and not more than 80% of O | 01-20-2011 |
20110065287 | PULSED CHEMICAL VAPOR DEPOSITION OF METAL-SILICON-CONTAINING FILMS - A method is provided for forming a metal-silicon-containing film on a substrate by pulsed chemical vapor deposition. The method includes providing the substrate in a process chamber, maintaining the substrate at a temperature suited for chemical vapor deposition of a metal-silicon-containing film by thermal decomposition of a metal-containing gas and a silicon-containing gas on the substrate, exposing the substrate to a continuous flow of the metal-containing gas, and during the continuous flow, exposing the substrate to sequential pulses of the silicon-containing gas. | 03-17-2011 |
20110165780 | METHODS OF FORMING RUTHENIUM-CONTAINING FILMS BY ATOMIC LAYER DEPOSITION - A method of forming ruthenium-containing films by atomic layer deposition is provided. The method comprises delivering at least one precursor to a substrate, the at least one precursor corresponding in structure to Formula I: (L)Ru(CO) | 07-07-2011 |
20110171836 | METHODS FOR FORMING A RUTHENIUM-BASED FILM ON A SUBSTRATE - Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate. | 07-14-2011 |
20110183527 | Precursor Composition, Methods of Forming a Layer, Methods of Forming a Gate Structure and Methods of Forming a Capacitor - In a method of forming a layer, a precursor composition including a metal and a ligand chelating to the metal is stabilized by contacting the precursor composition with an electron donating compound to provide a stabilized precursor composition onto a substrate. A reactant is introduced onto the substrate to bind to the metal in the stabilized precursor composition. The stabilized precursor composition is provided onto the substrate by introducing the precursor composition onto the substrate after the electron donating compound is introduced onto the substrate. The electron donating compound is continuously introduced onto the substrate during and after the precursor composition is introduced. | 07-28-2011 |
20110207337 | METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING - The application relates to a method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (M | 08-25-2011 |
20110217850 | METHODS FOR OXIDATION OF A SEMICONDUCTOR DEVICE - Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas. | 09-08-2011 |
20110256735 | ALD OF METAL SILICATE FILMS - Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface. | 10-20-2011 |
20110263137 | PRETREATMENT PROCESSES WITHIN A BATCH ALD REACTOR - Embodiments of the invention provide methods for forming dielectric materials on a substrate. In one embodiment, a method includes exposing a substrate surface to a first oxidizing gas during a pretreatment process, wherein the first oxidizing gas contains a mixture of ozone and oxygen having an ozone concentration within a range from about 1 atomic percent to about 50 atomic percent and forming a hafnium-containing material on the substrate surface by exposing the substrate surface sequentially to a deposition gas and a second oxidizing gas during an atomic layer deposition (ALD) process, wherein the deposition gas contains a hafnium precursor, the second oxidizing gas contains water, and the hafnium-containing material has a thickness within a range from about 5 Å to about 300 Å. In one example, the hafnium-containing material contains hafnium oxide having the chemical formula of HfO | 10-27-2011 |
20110281442 | METHODS AND APPARATUS FOR FORMING NITROGEN-CONTAINING LAYERS - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH | 11-17-2011 |
20110300720 | Plasma treatment of substrates prior to deposition - A plasma processing chamber particularly useful for pre-treating low-k dielectric films and refractory metal films subject to oxidation prior to deposition of other layers. A remote plasma source (RPS) excites a processing gas into a plasma and delivers it through a supply tube to a manifold in back of a showerhead faceplate. The chamber is configured for oxidizing and reducing plasmas in the same or different processes when oxygen and hydrogen are selectively supplied to the RPS. The supply tube and showerhead may be formed of dielectric oxides which may be passivated by a water vapor plasma from the remote plasma source. In one novel process, a protective hydroxide coating is formed on refractory metals by alternating neutral plasmas of hydrogen and oxygen. | 12-08-2011 |
20110300721 | Methods of Making Crystalline Tantalum Pentoxide - There is disclosed a method of forming crystalline tantalum pentoxide on a ruthenium-containing material having an oxygen-containing surface wherein the oxygen-containing surface is contacted with a treating composition, such as water, to remove at least some oxygen. Crystalline tantalum pentoxide is formed on at least a portion of the surface having reduced oxygen content. | 12-08-2011 |
20120021612 | METHODS FOR MANUFACTURING DIELECTRIC FILMS - A method for manufacturing a dielectric film having a high dielectric constant is provided. | 01-26-2012 |
20120028478 | VAPOR DEPOSITION OF METAL OXIDES, SILICATES AND PHOSPHATES, AND SILICON DIOXIDE - Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris(tert-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. Supplying the vapors in alternating pulses produces these same compositions with a very uniform distribution of thickness and excellent step coverage. | 02-02-2012 |
20120034793 | METHOD FOR FORMING METAL NITRIDE FILM - A wafer serving as a target substrate to be processed is loaded into a chamber, and an inside of the chamber is maintained under a vacuum level. Then, a TiN film is formed on the wafer by alternately supplying TiCl | 02-09-2012 |
20120045903 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, AND SUBSTRATE PROCESSING APPARATUS - Provided is a method of forming a tantalum oxide-based film having good step coverage while controlling an oxygen concentration in the film. The method includes forming a tantalum nitride layer on a substrate by supplying a source gas including a tantalum and a nitriding agent into a process chamber wherein the substrate is accommodated under a condition where a chemical vapor deposition (CVD) reaction is caused; oxidizing the tantalum nitride layer by supplying an oxidizing agent into the process chamber under a condition where an oxidation reaction of the tantalum nitride layer by the oxidizing agent is unsaturated; and forming on the substrate a conductive tantalum oxynitride film wherein an oxygen is stoichiometrically insufficient with respect to the tantalum and a nitrogen by alternately repeating forming the tantalum nitride layer on the substrate and oxidizing the tantalum nitride layer a plurality of times. | 02-23-2012 |
20120108078 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is made possible to provide a semiconductor device and a method for manufacturing the semiconductor device that have the highest possible permittivity and can be produced at low production costs. A method for manufacturing a semiconductor device, includes: forming an amorphous film containing (Hf | 05-03-2012 |
20120122320 | Method Of Processing Low K Dielectric Films - Provided are methods for re-incorporating carbon into low-k films after processes which result in depletion of carbon from the films. Additionally, methods for replenished depleted carbon and capping with tantalum nitride are also described. | 05-17-2012 |
20120178266 | COMPOSITIONS AND METHODS OF USE FOR FORMING TITANIUM-CONTAINING THIN FILMS - Compositions and methods for forming titanium-containing thin films are provided. The compositions comprise at least one precursor selected from the group consisting of (methylcyclopentadienyl)Ti(NMe | 07-12-2012 |
20120196449 | ZIRCONIUM, HAFNIUM AND TITANIUM PRECURSORS FOR ATOMIC LAYER DEPOSITION OF CORRESPONDING METAL-CONTAINING FILMS - A zirconium precursor selected from among compounds of Formulae (I), (II) and (III): | 08-02-2012 |
20120202356 | METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS OF FORMING SEMICONDUCTOR STRUCTURES - Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O | 08-09-2012 |
20120202357 | In Situ Vapor Phase Surface Activation Of SiO2 - Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia. | 08-09-2012 |
20120202358 | GRADED DIELECTRIC STRUCTURES - Graded dielectric layers and methods of fabricating such dielectric layers provide dielectrics in a variety of electronic structures for use in a wide range of electronic devices and systems. In an embodiment, a dielectric layer is graded with respect to a doping profile across the dielectric layer. In an embodiment, a dielectric layer is graded with respect to a crystalline structure profile across the dielectric layer. In an embodiment, a dielectric layer is formed by atomic layer deposition incorporating sequencing techniques to generate a doped dielectric material. | 08-09-2012 |
20120208375 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H | 08-16-2012 |
20120289063 | Methods For Manufacturing High Dielectric Constant Films - Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface. | 11-15-2012 |
20130072030 | METHOD FOR PROCESSING HIGH-K DIELECTRIC LAYER - A method for processing a high-k dielectric layer includes the following steps. A semiconductor substrate is provided, and a high-k dielectric layer is formed thereon. The high-k dielectric layer has a crystalline temperature. Subsequently, a first annealing process is performed, and a process temperature of the first annealing process is substantially smaller than the crystalline temperature. A second annealing process is performed, and a process temperature of the second annealing process is substantially larger than the crystalline temperature. | 03-21-2013 |
20130109199 | METHOD FOR FABRICATING OXIDES/SEMICONDUCTOR INTERFACES | 05-02-2013 |
20130164947 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 06-27-2013 |
20130244447 | OXIDATION OF METALLIC FILMS - Methods for the aqueous oxidation of metallic films are described. For example, a film of hafnium metal on a silicon substrate can be oxidized to hafnium dioxide using hot deionized water. Methods for fabricating electrical components such as capacitors and field effect transistors using the oxidized metallic films are also described. For example, capacitors having a hafnium dioxide dielectric layer can be fabricated. | 09-19-2013 |
20130295778 | NIOBIUM AND VANADIUM ORGANOMETALLIC PRECURSORS FOR THIN FILM DEPOSITION - Compound of the formula Cp(R | 11-07-2013 |
20130302998 | Adhesion Layer for Solution-Processed Transition Metal Oxides on Inert Metal Contacts - An ammonium thio-transition metal complex is used as an adhesion promoter for immobilizing temperature-stable transition metal oxide layers on an inert metal surface. The ammonium thio-transition metal complex comprises a transition metal selected from molybdenum, tungsten and vanadium, and is preferably ammonium tetrathiomolybdate. A precursor of the transition metal oxide is deposited on the inert metal surface by a solution-based process. The precursor is a dispersion or a dissolution of the transition metal oxide, a transition metal oxide hydrate, an ammonium salt of an acidic transition metal oxide hydrate or phosphoric acid-transition metal oxide complex in water or a phosphoric acid-transition metal oxide complex dissolved in a polar organic solvent. | 11-14-2013 |
20130316546 | METHODS OF ATOMIC LAYER DEPOSITION OF HAFNIUM OXIDE AS GATE DIELECTRICS - In some embodiments, the present invention discloses a two-step deposition process for forming hafnium oxide gate dielectric, comprising an interface layer deposition followed by a bulk layer deposition. In the interface layer deposition process, water is used as an oxidizer precursor together with a hafnium-containing precursor. In the bulk layer deposition process, oxygen or ozone is used as an oxidizer precursor together with a hafnium-containing precursor. | 11-28-2013 |
20130337659 | NOVEL GROUP IV-B ORGANOMETALLIC COMPOUND, AND METHOD FOR PREPARING SAME - The present invention relates to novel 4B group metalorganic compounds represented by following formula I and the preparation thereof. Specifically, the present invention relates to a thermally and chemically stable 4B group organo-metallic compound utilized in chemical vapor deposition (CVD) or atomic layer deposition (ALD), and the preparation thereof. A 4B group metalorganic compound prepared according to the present invention volatiles easily and is stable at high temperature, and can be used effectively in manufacturing 4B group metal oxide thin films. | 12-19-2013 |
20140017906 | METHOD FOR FORMING TIN BY PVD - A method for forming titanium nitride by PVD is disclosed, comprising: generating ions of a noble gas by glow discharge under a vacuum condition that a nitrogen gas and the noble gas are supplied; nitriding a surface of a wafer and a surface of a titanium target with the nitrogen gas; bombarding the surface of the titanium target with the ions of the noble gas after they are accelerated in an electric field so that titanium ions and titanium nitride are sputtered; and forming a titanium nitride layer by depositing titanium nitride on the surface of the wafer in a magnetic field, while titanium ions are injected into the surface of the wafer so that stress is introduced into the titanium nitride layer, wherein non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased by increasing kinetic energy of titanium ions which are injected into the surface of the wafer. In the method for forming titanium nitride by PVD according to the present disclosure, kinetic energy of titanium ions which are injected into the surface of the wafer is increased by controlling process parameters so that non-crystallization fraction of the titanium nitride layer and stress in the titanium nitride layer are increased. | 01-16-2014 |
20140017907 | NITRIDATION OF ATOMIC LAYER DEPOSITED HIGH-K DIELECTRICS USING TRISILYLAMINE - A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film. | 01-16-2014 |
20140080320 | SEMICONDUCTOR PROCESSING SYSTEM INCLUDING VAPORIZER AND METHOD FOR USING SAME - A method for using a system, which includes a film formation apparatus for forming a high-dielectric constant thin film on target substrates together and a gas supply apparatus for supplying a process gas. The method includes a preparatory stage of determining a set pressure range of pressure inside a vaporizing chamber for a liquid material cooled at a set temperature. The preparatory stage includes obtaining a first limit value of pressure at which vaporization of the liquid material starts being inhibited due to an increase in the pressure, obtaining a second limit value of pressure at which vaporization of the liquid material starts being unstable and the pressure starts pulsating movement due to a decrease in the pressure, and determining the set pressure range to be defined by an upper limit lower than the first limit value and a lower limit higher than the second limit value. | 03-20-2014 |
20140127913 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are titanium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit titanium, titanium oxide, strontium-titanium oxide, and barium strontium titanate containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 05-08-2014 |
20140170861 | HAFNIUM-CONTAINING AND ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION - Disclosed are hafnium-containing and zirconium-containing precursors and methods of synthesizing the same. The compounds may be used to deposit hafnium, zirconium, hafnium oxide, and zirconium oxide containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition. | 06-19-2014 |
20140242811 | ATOMIC LAYER DEPOSITION METHOD - An ALD method includes providing a substrate in an ALD reactor, performing a pre-ALD treatment to the substrate in the ALD reactor, and performing one or more ALD cycles to form a dielectric layer on the substrate in the ALD reactor. The pre-ALD treatment includes providing a hydroxylating agent to the substrate in a first duration, and providing a precursor to the substrate in a second duration. Each of the ALD cycles includes providing the hydroxylating agent to the substrate in a third duration, and providing the precursor to the substrate in a fourth duration. The first duration is longer than the third duration. | 08-28-2014 |
20140242812 | METHOD OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING - Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe | 08-28-2014 |
20140273525 | Atomic Layer Deposition of Reduced-Leakage Post-Transition Metal Oxide Films - Metal-oxide films (e.g., aluminum oxide) with low leakage current suitable for high-k gate dielectrics are deposited by atomic layer deposition (ALD). The purge time after the metal-deposition phase is 5-15 seconds, and the purge time after the oxidation phase is prolonged beyond 60 seconds. Prolonging the post-oxidation purge produced an order-of-magnitude reduction of leakage current in 30 Å-thick Al | 09-18-2014 |
20140322923 | DIELECTRICS CONTAINING AT LEAST ONE OF A REFRACTORY METAL OR A NON-REFRACTORY METAL - Electronic apparatus and methods of forming the electronic apparatus may include one or more insulator layers having a refractory metal and a non-refractory metal for use in a variety of electronic systems and devices. Embodiments can include electronic apparatus and methods of forming the electronic apparatus having a tantalum aluminum oxynitride film. The tantalum aluminum oxynitride film may be structured as one or more monolayers. The tantalum aluminum oxynitride film may be formed using atomic layer deposition. Metal electrodes may be disposed on a dielectric containing a tantalum aluminum oxynitride film. | 10-30-2014 |
20140322924 | SILICON CONTAINING COMPOUNDS FOR ALD DEPOSITION OF METAL SILICATE FILMS - Disclosed are silicon containing compounds and their use in vapor deposition methods of hafnium silicate films having a desired silicon concentration. More particularly, deposition of hafnium silicate films by atomic layer deposition using moisture and the disclosed silicon containing compounds produce films having a desired silicon concentration. | 10-30-2014 |
20150140838 | Two Step Deposition of High-k Gate Dielectric Materials - Methods and apparatus for forming a dielectric layer for use as a gate dielectric are provided. A high-k layer is formed with first ALD process using a halogen-based precursor. The metal in the halogen-based precursor may be at least one of hafnium, zirconium, or titanium. The halogen in the halogen-based precursor may be at least one of fluorine, chlorine, or iodine. In some embodiments, the halogen-based metal precursor includes hafnium chloride. The remainder of the high-k layer is formed with second ALD process using a metal organic-based precursor. The metal in the metal organic-based precursor may be at least one of hafnium, zirconium, or titanium. The organic ligands in the metal organic-based precursor may be at least one of β-diketonate precursors, alkoxide precursors, amino precursors. In some embodiments, the metal organic-based precursor includes amino precursors. | 05-21-2015 |
20160064208 | Radical-enhanced atomic layer deposition using CF4 to enhance oxygen radical generation - A method of performing a radical-enhanced atomic-layer deposition process on a surface of a substrate that resides within an interior of a reactor chamber is disclosed. The method includes forming plasma from a gas mixture consisting of CF | 03-03-2016 |
20160079057 | SYSTEMS AND METHODS FOR REDUCING BACKSIDE DEPOSITION AND MITIGATINGTHICKNESS CHANGES AT SUBSTRATE EDGES - A substrate processing system for depositing film on a substrate includes a processing chamber defining a reaction volume and including a substrate support for supporting the substrate. A gas delivery system is configured to introduce process gas into the reaction volume of the processing chamber. A plasma generator is configured to selectively generate RF plasma in the reaction volume. A clamping system is configured to clamp the substrate to the substrate support during deposition of the film. A backside purging system is configured to supply a reactant gas to a backside edge of the substrate to purge the backside edge during the deposition of the film. | 03-17-2016 |
20160181109 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD | 06-23-2016 |
20190144998 | PROCESS FOR THE GENERATION OF METALLIC FILMS | 05-16-2019 |
20190148140 | DRY AND WET ETCH RESISTANCE FOR ATOMIC LAYER DEPOSITED TIO2 FOR SIT SPACER APPLICATION | 05-16-2019 |