| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438779000 | Compound semiconductor substrate | 9 |
| 20080268655 | Method for Manufacturing Semiconductor Device - The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film. | 10-30-2008 |
| 20090191719 | METHODS FOR FABRICATING COMPOUND MATERIAL WAFERS - Methods are disclosed for preparing a reconditioned donor substrate by providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers. | 07-30-2009 |
| 20110124203 | Method of forming a gate insulator in group III-V nitride semiconductor devices - A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer includes gallium oxynitride and gallium oxide, and performing a rapid thermal annealing process. The photo-assisted electrochemical process uses an electrolyte bath including buffered CH3COOH at a pH between about 5.5 and 7.5. The rapid thermal annealing process is conducted in O2 environment at a temperature between about 500° C. and 800° C. | 05-26-2011 |
| 20110177696 | SPUTTERING TARGET, METHOD FOR FORMING AMORPHOUS OXIDE THIN FILM USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - Disclosed is a sputtering target having a good appearance, which is free from white spots on the surface. The sputtering target is characterized by being composed of an oxide sintered body containing two or more kinds of homologous crystal structures. | 07-21-2011 |
| 20120028475 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device including performing oxygen plasma treatment to a surface of a nitride semiconductor layer, a power density of the oxygen plasma treatment being 0.2 to 0.3 W/cm | 02-02-2012 |
| 20140065842 | Methods And Apparatus For Forming Tantalum Silicate Layers On Germanium Or III-V Semiconductor Devices - Described are apparatus and methods for forming tantalum silicate layers on germanium or III-V materials. Such tantalum silicate layers may have Si/(Ta+Si) atomic ratios from about 0.01 to about 0.15. The tantalum silicate layers may be formed by atomic layer deposition of silicon oxide and tantalum oxide, followed by interdiffusion of the silicon oxide and tantalum oxide layers. | 03-06-2014 |
| 20150140836 | Methods to Control SiO2 Etching During Fluorine Doping of Si/SiO2 Interface - Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. Methods are disclosed that discuss the use of blocking species that bind to the surface of the dielectric and retard the etching of the dielectric surface by a doping/passivating species. The surface of the dielectric may be exposed to the blocking species a plurality of times during the process to ensure that the surface is well protected. | 05-21-2015 |
| 20160130719 | SOLUTION DEPOSITION METHOD FOR FORMING METAL OXIDE OR METAL HYDROXIDE LAYER - A solution deposition method including: applying a liquid precursor solution to a substrate, the precursor solution including an oxide of a first metal, a hydroxide of the first metal, or a combination thereof, dissolved in an aqueous ammonia solution; evaporating the precursor solution to directly form a solid seed layer on the substrate, the seed layer including an oxide of the first metal, a hydroxide of the first metal, or a combination thereof, the seed layer being substantially free of organic compounds; and growing a bulk layer on the substrate, using the seed layer as a growth site or a nucleation site. | 05-12-2016 |
| 20160203974 | SULFUR-CONTAINING THIN FILMS | 07-14-2016 |
