| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438762000 | At least one layer formed by reaction with substrate | 38 |
| 20080242107 | Method for manufacturing a semiconductor device by using an ALD technique - A method for manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon substrate, and forming a silicon nitride film on the silicon oxide film. The step of forming the silicon nitride film includes the steps of growing a first silicon layer having a thickness larger than a thickness of a monoatomic silicon layer, nitriding the first silicon layer to form a first silicon nitride layer, growing a second silicon layer on the first silicon layer on the first silicon nitride layer, and nitriding the second silicon oxide layer to form a second silicon nitride layer. | 10-02-2008 |
| 20080280455 | ATOMIC LAYER DEPOSITION SYSTEMS AND METHODS INCLUDING METAL BETA-DIKETIMINATE COMPOUNDS - The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. | 11-13-2008 |
| 20080286981 | IN SITU SILICON AND TITANIUM NITRIDE DEPOSITION - A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550° C., and at temperatures within 100° C. of one another. | 11-20-2008 |
| 20080311759 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A method of fabricating a semiconductor device including depositing a first silicon oxide film on a silicon substrate, depositing a silicon-containing film on the first silicon oxide film, applying a coating solution for silica film formation over the silicon-containing film, and heat-treating the coating solution, thereby forming a second silicon oxide film. | 12-18-2008 |
| 20090042402 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A semiconductor device fabrication method by which a desired pattern can be formed. After a conductive layer which is a material for a gate electrode is formed, a SiN layer to be used as a hard mask is formed. Then a photoresist layer is formed as a second mask. Then patterning is performed on the photoresist layer. Then patterning is performed on the SiN layer with the photoresist layer as a mask. After the photoresist layer is removed, surface portions of the SiN layer are transmuted and are selectively removed. The conductive layer under the SiN layer is etched with the reduced SiN layer as the hard mask. By doing so, the photoresist layer does not, for example, deform during the process and a minute gate electrode pattern can be formed stably. | 02-12-2009 |
| 20090042403 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes the steps of forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and forming an interlayer insulating film on the nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—O—Si) bond. | 02-12-2009 |
| 20090087999 | TECHNIQUE FOR COMPENSATING FOR A DIFFERENCE IN DEPOSITION BEHAVIOR IN AN INTERLAYER DIELECTRIC MATERIAL - By selectively providing a buffer layer having an appropriate thickness, height differences occurring during the deposition of an SACVD silicon dioxide may be reduced during the formation of an interlayer dielectric stack of advanced semiconductor devices. The buffer material may be selectively provided after the deposition of contact etch stop layers of both types of internal stress or may be provided after the deposition of one type of dielectric material and may be used during the subsequent patterning of the other type of dielectric stop material as an efficient etch stop layer. | 04-02-2009 |
| 20090098738 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a flash memory device is disclosed. The method comprises forming a first insulating layer on a semiconductor substrate; accumulating nitrogen at an interface between the semiconductor substrate and the first insulating layer to form a second insulating layer at the interface; and implanting oxygen into the second insulating layer to convert the second insulating layer to a third insulating layer. | 04-16-2009 |
| 20090258505 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A manufacturing method for semiconductor devices having MOSFET gate insulation films The method includes forming a silicon oxide film, forming a silicon nitride film, nitriding the silicon nitride film, and first and second heat treatments. | 10-15-2009 |
| 20100029091 | Method of Forming Tunnel Insulation Layer in Flash Memory Device - A method of forming a tunnel insulating layer in a flash memory device, comprising: forming an oxide layer on a semiconductor substrate, forming a nitrogen-containing layer to a surface of the oxide layer, and forming a nitrogen-accumulating layer on an interface defined between the semiconductor substrate and the oxide layer. | 02-04-2010 |
| 20110039418 | METHOD FOR INSULATING FILM FORMATION, STORAGE MEDIUM FROM WHICH INFORMATION IS READABLE WITH COMPUTER, AND TREATMENT SYSTEM - In order to form an insulating film, which constitutes a flat interface with silicon, by CVD, a surface of silicon is oxidized to form a silicon oxide film using a plasma treatment apparatus in which microwaves are introduced into a chamber through a flat antenna having a plurality of holes. A silicon oxide film is formed as an insulating film on the silicon oxide film by CVD. Further, in the plasma treatment apparatus, a treating gas containing a noble gas and oxygen is introduced into the chamber, and, further, microwaves are introduced into the chamber through the flat antenna. Plasma is generated under a pressure in the range of not less than 6.7 Pa and not more than 533 Pa to modify the insulating film with the plasma. | 02-17-2011 |
| 20110104906 | METHOD OF GROWING OXIDE THIN FILMS - Process for producing silicon oxide containing thin films on a growth substrate by the ALCVD method. In the process, a vaporisable silicon compound is bonded to the growth substrate, and the bonded silicon compound is converted to silicon dioxide. The invention comprises using a silicon compound which contains at least one organic ligand and the bonded silicon compound is converted to silicon dioxide by contacting it with a vaporised, reactive oxygen source, in particular with ozone. The present invention provides a controlled process for growing controlling thin films containing SiO | 05-05-2011 |
| 20110111603 | ATOMIC LAYER DEPOSITION APPARATUS - A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber. | 05-12-2011 |
| 20110207334 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes an improved technique of filling a trench to provide the resulting semiconductor device with better characteristics and higher reliability. The method includes forming a trench in a semiconductor layer, forming a first layer on the semiconductor layer using a silicon source and a nitrogen source to fill the trench, curing the first layer using an oxygen source, and annealing the second layer. The method may also be used to form other types of insulating layers such as an interlayer insulating layer. | 08-25-2011 |
| 20110281440 | METHODS FOR NITRIDATION AND OXIDATION - Methods of nitridation and selective oxidation are provided herein. In some embodiments, a method of selectively forming an oxide layer on a semiconductor structure disposed on a substrate support in a process chamber is provided, wherein the semiconductor structure comprising a substrate, one or more metal-containing layers, and one or more non metal-containing layers. The method may include forming a first remote plasma from a first process gas comprising oxygen; and exposing the semiconductor structure to a reactive species formed from the first remote plasma to selectively form an oxide layer on the one or more non metal-containing layers, wherein a density of the reactive species is about 10 | 11-17-2011 |
| 20120040534 | GAP PROCESSING - Among various methods, devices, and apparatuses, a number of methods are provided for forming a gap between circuitry. One such method includes depositing a first oxide precursor material on at least two conductive lines having at least one gap between the at least two conductive lines, and forming a breadloaf configuration with the first oxide precursor material on a top of each of the at least two conductive lines that leaves a space between a closest approach of at least two adjacent breadloaf configurations. The method also includes depositing a second oxide precursor material over the first oxide precursor material, where depositing the second oxide precursor material results in closing the space between the closest approach of the at least two adjacent breadloaf configurations. | 02-16-2012 |
| 20120058645 | METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - The present invention provides a semiconductor device having an improved silicon oxide film as a gate insulation film of a Metal Insulator Semiconductor structure and a method of making the same. | 03-08-2012 |
| 20120077349 | PLASMA-ACTIVATED DEPOSITION OF CONFORMAL FILMS - Embodiments related to depositing thin conformal films using plasma-activated conformal film deposition (CFD) processes are described herein. In one example, a method of processing a substrate includes, applying photoresist to the substrate, exposing the photoresist to light via a stepper, patterning the resist with a pattern and transferring the pattern to the substrate, selectively removing photoresist from the substrate, placing the substrate into a process station, and, in the process station, in a first phase, generating radicals off of the substrate and adsorbing the radicals to the substrate to form active species, in a first purge phase, purging the process station, in a second phase, supplying a reactive plasma to the surface, the reactive plasma configured to react with the active species and generate the film, and in a second purge phase, purging the process station. | 03-29-2012 |
| 20120100725 | ADHESIVENESS OF FLUOROCARBON (CFX) FILM BY DOPING OF AMORPHOUS CARBON - A method of forming an amorphous carbon layer on an insulating layer includes the step of forming an amorphous carbon layer using a plasma reaction process. The amorphous carbon layer is formed in an atmosphere containing a plasma excitation gas, a C | 04-26-2012 |
| 20120252223 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate oxide film being a silicon oxide film on a surface of the SiC substrate by the combustion reaction. | 10-04-2012 |
| 20120270408 | MANUFACTURING METHOD OF GATE DIELECTRIC LAYER - A manufacturing method of a gate dielectric layer that includes a nitride layer and an oxide layer is provided. A substrate is provided. A nitridation treatment is performed to form the nitride layer on the substrate. An oxidation treatment is performed subsequent to the formation of the nitride layer to form the oxide layer between the nitride layer and the substrate. | 10-25-2012 |
| 20120329285 | GATE DIELECTRIC LAYER FORMING METHOD - A gate dielectric layer forming method is applied to a fabrication process of a metal-oxide-semiconductor field-effect transistor. The gate dielectric layer forming method includes the following steps. Firstly, a substrate is provided. Then, an interlayer is formed on the substrate. Then, a high-k dielectric layer is formed on the interlayer. A nitridation process is performed to convert the high-k dielectric layer into a nitridated high-k dielectric layer. A first low temperature post-nitridation annealing process is performed to treat the nitridated high-k dielectric layer with a first gas. Afterwards, a second low temperature post-nitridation annealing process is performed to treat the nitridated high-k dielectric layer with a second gas. | 12-27-2012 |
| 20130052836 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATE AND SUBSTRATE PROCESSING APPARATUS - There is provided a method for manufacturing a semiconductor device, including forming an insulating film having a prescribed composition and a prescribed film thickness on a substrate by alternately performing the following steps prescribed number of times: supplying one of the sources of a chlorosilane-based source and an aminosilane-based source to a substrate in a processing chamber, and thereafter supplying the other source, to form a first layer containing silicon, nitrogen, and carbon on the substrate; and supplying a reactive gas different from each of the sources, to the substrate in the processing chamber, to modify the first layer and form a second layer. | 02-28-2013 |
| 20130072027 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER READABLE RECORDING MEDIUM - Provided is a method of manufacturing a semiconductor device having a structure in which an oxide film and a nitride film are stacked. The method includes forming a stacked film having an oxide film and a nitride film stacked therein on a substrate in a processing container by alternately performing a first cycle and a second cycle a predetermined number of times, the first cycle comprising forming the oxide film by supplying a source gas, a nitriding gas and an oxidizing gas to the substrate in the processing container a predetermined number of times, and the second cycle comprising forming the nitride film by supplying the source gas and the nitriding gas to the substrate in the processing container a predetermined number of times, wherein the forming of the oxide film and the forming of the nitride film are consecutively performed while retaining a temperature of the substrate constant. | 03-21-2013 |
| 20130149872 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF PROCESSING SUBSTRATE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM - There is provided a method of manufacturing a semiconductor device, including: forming a film containing a specific element, nitrogen, and carbon on a substrate, by alternately performing the following steps a specific number of times: a step of supplying a source gas containing the specific element and a halogen element, to the substrate; and a step of supplying a reactive gas composed of three elements of carbon, nitrogen, and hydrogen and having more number of a carbon atom than the number of a nitrogen atom in a composition formula thereof, to the substrate. | 06-13-2013 |
| 20140051260 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 02-20-2014 |
| 20140057453 | DEPOSITION OF THIN FILMS ON ENERGY SENSITIVE SURFACES - A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to form the coating. This process occurs without an intermediate evacuation to remove the adsorbate molecules prior to contact with the plasma volume. As a result, kinetic ion impact damage to the surface is limited while efficient operation of the plasma deposition system continues. | 02-27-2014 |
| 20140073142 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A thin film having high HF resistance and a low dielectric constant can be formed in a low temperature range with a high productivity. A thin film including a predetermined element and a borazine ring skeleton is formed on a substrate by performing a cycle a predetermined number of times. The cycle includes supplying a source gas including the predetermined element and a halogen group to the substrate and supplying a reaction gas including a borazine compound to the substrate under a condition where the borazine ring skeleton in the borazine compound is maintained. | 03-13-2014 |
| 20140256153 | MULTILAYER DIELECTRIC STRUCTURES FOR SEMICONDUCTOR NANO-DEVICES - Multilayer dielectric structures are provided having silicon nitride (SiN) and silicon oxynitride (SiNO) films for use as capping layers, liners, spacer barrier layers, and etch stop layers, and other components of semiconductor nano-devices. For example, a semiconductor structure includes a multilayer dielectric structure having multiple layers of dielectric material including one or more SiN layers and one or more SiNO layers. The layers of dielectric material in the multilayer dielectric structure have a thickness in a range of about 0.5 nanometers to about 3 nanometers. | 09-11-2014 |
| 20150017812 | SEQUENTIAL PRECURSOR DOSING IN AN ALD MULTI-STATION/BATCH REACTOR - Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second processing station with precursor flowing from a common source, wherein the timing of said dosing is staggered such that the first substrate is dosed during a first dosing phase during which the second substrate is not substantially dosed, and the second substrate is dosed during a second dosing phase during which the first substrate is not substantially dosed. Also disclosed herein are apparatuses having a plurality of processing stations contained within one or more reaction chambers and a controller with machine-readable instructions for staggering the dosing of first and second substrates at first and second processing stations. | 01-15-2015 |
| 20150064929 | METHOD OF GAP FILLING - A method of gap filling includes providing a substrate having a plurality of gaps formed therein. Then, an in-situ steam generation oxidation is performed to form an oxide liner on the substrate. The oxide liner is formed to cover surfaces of the gaps. Subsequently, a high aspect ratio process is performed to form an oxide protecting layer on the oxide liner. After forming the oxide protecting layer, a flowable chemical vapor deposition is performed to form an oxide filling on the oxide protecting layer. More important, the gaps are filled up with the oxide filling layer. | 03-05-2015 |
| 20150126043 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times. The cycle includes supplying a specific element-containing gas, supplying a carbon-containing gas, supplying an oxidizing gas, and supplying a nitriding gas. The act of supplying the nitriding gas is performed before the act of supplying the specific element-containing gas, and the act of supplying the carbon-containing gas and the act of supplying the oxidizing gas are not performed until the act of supplying the specific element-containing gas is performed. | 05-07-2015 |
| 20150140833 | METHOD OF DEPOSITING A LOW-TEMPERATURE, NO-DAMAGE HDP SIC-LIKE FILM WITH HIGH WET ETCH RESISTANCE - Embodiments of the invention generally relate to methods of forming an etch resistant silicon-carbon-nitrogen layer. The methods generally include activating a silicon-containing precursor and a nitrogen-containing precursor in the processing region of a processing chamber in the presence of a plasma and depositing a thin flowable silicon-carbon-nitrogen material on a substrate using the activated silicon-containing precursor and a nitrogen-containing precursor. The thin flowable silicon-carbon-nitrogen material is subsequently cured using one of a variety of curing techniques. A plurality of thin flowable silicon-carbon-nitrogen material layers are deposited sequentially to create the final layer. | 05-21-2015 |
| 20150325427 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - Provided are: forming an oxycarbonitride film, an oxycarbide film or an oxide film on a substrate by alternately performing a specific number of times: forming a first layer containing the specific element, nitrogen and carbon, on the substrate, by alternately performing a specific number of times, supplying a first source containing the specific element and a halogen-group to the substrate in a processing chamber, and supplying a second source containing the specific element and an amino-group to the substrate in the processing chamber; and forming a second layer by oxidizing the first layer by supplying an oxygen-containing gas, and an oxygen-containing gas and a hydrogen-containing gas to the substrate in the processing chamber. | 11-12-2015 |
| 20150325434 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-Transitory Computer-Readable Recording Medium - A high quality thin film is formed by forming a layer in which remaining residues are suppressed for each cycle. When a substrate sequentially passes through a first processing region, a second processing region, and a third processing region by rotating a substrate placement unit, a first layer is formed on the substrate while the substrate passes through the first processing region, a second layer is formed by reacting plasma of a reactive gas with the first layer while the substrate passes through the second processing region, and the second layer is modified by plasma of a modifying gas while the substrate passes through the third processing region. | 11-12-2015 |
| 20160079054 | Deposition of SiN - Methods and precursors for forming silicon nitride films are provided. In some embodiments, silicon nitride can be deposited by atomic layer deposition (ALD), such as plasma enhanced ALD. In some embodiments, deposited silicon nitride can be treated with a plasma treatment. The plasma treatment can be a nitrogen plasma treatment. In some embodiments the silicon precursors for depositing the silicon nitride comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%). In some embodiments, a method for depositing silicon nitride films comprises a multi-step plasma treatment. | 03-17-2016 |
| 20160093489 | METHOD OF FORMING A DIELECTRIC LAYER - A method of forming a dielectric layer includes the following steps. First of all, a high-k dielectric layer is formed on a substrate. Next, a nitridation process is performed on the high-k dielectric layer immediately after the high-k dielectric layer is formed. Then, a post-nitridation process is performed on the high-k dielectric layer after the nitridation process is performed. | 03-31-2016 |
| 20160093490 | METHOD FOR MAKING SEMICONDUCTOR DEVICES INCLUDING REACTANT TREATMENT OF RESIDUAL SURFACE PORTION - A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing. | 03-31-2016 |
