| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438726000 | Having microwave gas energizing | 12 |
| 20090215274 | Plasma processing apparatus and plasma processing method - The plasma processing apparatus includes a holding table disposed in a processing chamber, for holding thereon a target substrate; a dielectric plate disposed at a position facing the holding table, for introducing a microwave into the processing chamber; a plasma igniting unit for carrying out plasma ignition in a state in which an electric field is generated inside the processing chamber by the introduced microwave, thereby generating the plasma inside the processing chamber; and a control unit, which includes an elevating mechanism, for performing control operations to alter a distance between the holding table and the dielectric plate to a first distance, to drive the plasma igniting unit, to alter the distance between the holding table and the dielectric plate to a second distance different from the first distance, and to carry out the plasma process on the semiconductor substrate. | 08-27-2009 |
| 20090311872 | GAS RING, APPARATUS FOR PROCESSING SEMICONDUCTOR SUBSTRATE, THE APPARATUS INCLUDING THE GAS RING, AND METHOD OF PROCESSING SEMICONDUCTOR SUBSTRATE BY USING THE APPARATUS - A gas ring has a ring shape and includes: a gas inlet hole through which a gas is introduced from outside the gas inlet hole into the gas ring; a plurality of gas jets that ejects the gas transferred from the gas inlet hole; and a plurality of branched paths extending along the ring shape from the gas inlet hole to each of the plurality of gas jets. Here, distances between each of the plurality of gas jets to central parts, which are branch points of each of the plurality of branched paths, are identical to each other. | 12-17-2009 |
| 20100178775 | SHOWER PLATE SINTERED INTEGRALLY WITH GAS RELEASE HOLE MEMBER AND METHOD FOR MANUFACTURING THE SAME - A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas. | 07-15-2010 |
| 20100279512 | PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA-PROCESSING SEMICONDUCTOR SUBSTRATE - A plasma processing apparatus includes an antenna unit for generating plasma by using microwaves as a plasma source in such a way that a first region having a relatively high electron temperature of plasma, and a second region having a lower electron temperature of plasma than the first region are formed in a chamber, a first arranging means for arranging a semiconductor substrate W in the first region, a second arranging means for arranging the semiconductor substrate in the second region, and a plasma generation stopping means for stopping the generation of plasma of a plasma generating means, while the semiconductor substrate is arranged in the second region. | 11-04-2010 |
| 20110039417 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A dielectric board ( | 02-17-2011 |
| 20110053381 | METHOD FOR MODIFYING INSULATING FILM WITH PLASMA - Disclosed is a method for modifying an insulating film with plasma using a plasma processing apparatus which introduces a microwave into a processing chamber through a plane antenna having a plurality of holes. Processing gas containing a noble gas and oxygen is introduced into the processing chamber and microwave is introduced into the processing chamber through the plane antenna. Plasma composed mainly of O | 03-03-2011 |
| 20130065399 | PLASMA PROCESSING METHOD - A plasma processing method includes holding a wafer on a holding stage, generating plasma inside the processing chamber by a plasma generator to define a first processing region having an electron temperature higher than a predetermined value and a second processing region having an electron temperature lower than the predetermined value, moving the holding stage for the wafer to be positioned in the first processing region, performing the plasma processing of the wafer positioned in the first processing region, moving the holding stage for the wafer to be positioned in the second processing region, and stopping to generate plasma when the wafer is positioned in the second processing region after completion of the plasma processing. | 03-14-2013 |
| 20130115781 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a flow splitter for dividing a common gas into two common gas streams of common gas branch lines. A central introduction portion connected to one of the common gas branch lines supplies a common gas to a central portion of a substrate to be processed. A peripheral introducing portion connected to the other one of the common gas branch lines supplies the common gas to a peripheral portion of the substrate. The peripheral introducing portion has peripheral inlets arranged about a circumferential region above the substrate. An additive gas line is connected to an additive gas source to add an additive gas to at least one of the common gas branch lines. In addition, an electron temperature of a plasma in a region where the peripheral inlets are disposed is lower than that in a region where the introduction portion is disposed. | 05-09-2013 |
| 20130224961 | PLASMA TUNING RODS IN MICROWAVE RESONATOR PLASMA SOURCES - A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber. | 08-29-2013 |
| 20140080311 | PLASMA PROCESSING METHOD - A plasma processing method includes holding a target substrate on a holding table installed in a processing chamber; generating a microwave for plasma excitation; supplying a reactant gas having dissociation property; generating an electric field by introducing the microwave via a dielectric plate disposed to face the holding table; setting a distance between the holding table and the dielectric plate is set to a first distance based on periodicity of a standing wave formed in the dielectric plate by the introduction of the microwave, and generating plasma in the processing chamber in a state where the electric field is generated in the processing chamber; and after the generating of the plasma, setting the distance to a second distance shorter than the first distance by moving the holding table up and down, and performing the plasma process on the target substrate. | 03-20-2014 |
| 20150064926 | PLASMA PROCESSING METHOD - A plasma processing method can etch regions having different densities at the same etching rates. When etching with surface wave plasma, both of layers contain Si and N, a processing gas includes a hydro fluorocarbon gas, a rare gas, and an oxygen gas, and a high frequency bias potential is applied to a preset location at a side of a substrate. Further, a power per unit area of the substrate, which generates the high frequency bias potential, is set to be about 0 W/m | 03-05-2015 |
| 438727000 | Producing energized gas remotely located from substrate | 1 |
| 20130203261 | PLASMA TUNING RODS IN MICROWAVE RESONATOR PROCESSING SYSTEMS - A plasma tuning rod system is provided with one or more microwave cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to a plasma by generating resonant microwave energy in one or more plasma tuning rods within and/or adjacent to the plasma. One or more microwave cavity assemblies can be coupled to a process chamber, and can comprise one or more tuning spaces/cavities. Each tuning space/cavity can have one or more plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM energy from the resonant cavities to the process space within the process chamber and thereby create uniform plasma within the process space. | 08-08-2013 |
