| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438725000 | Organic material (e.g., resist, etc.) | 25 |
| 20080254639 | METHOD FOR ETCHING ORGANIC HARDMASKS - A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an amorphous carbon organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the amorphous carbon organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture to create a plasma of the mixture. The method further includes contacting the amorphous carbon organic hardmask with the plasma, with the amorphous carbon organic hardmask being at a temperature in excess of 200° C., to remove the amorphous carbon organic hardmask without substantially harming the underlying substrate. | 10-16-2008 |
| 20090029558 | Method of manufacturing semiconductor device - The present invention relates to a method of manufacturing a semiconductor device using a substrate including an organic low dielectric constant film containing a silicon, a carbon, an oxygen, and a hydrogen, with a resist pattern being formed on an upper layer side of the low dielectric constant film. The method comprising: an etching step in which the low dielectric constant film is etched by a plasma; an ashing step following to the etching step, in which the resist pattern is ashed by a plasma that is rich in oxygen radicals in such a manner that a relative dielectric constant of the low dielectric constant film can become 5.2 or more; and a recovering step following to the ashing step, in which an organic gas is supplied to the low dielectric constant film so as to recovery a damage of the low dielectric constant film caused by the plasma. | 01-29-2009 |
| 20090047793 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Disclosed herein is a method of manufacturing a semiconductor device, including the step of ashing away by a plasma treatment an organic material film formed over a substrate with an inter-layer insulator film therebetween, wherein the plasma treatment is conducted while electric power applied so as to draw ions in a plasma toward the substrate is periodically turned ON and OFF. | 02-19-2009 |
| 20090047794 | Method for manufacturing semiconductor device and storage medium - [Object] It is an object of the present invention to provide a semiconductor device manufacturing method capable of forming a high perpendicularity mask pattern, which is laminated on an etching target film on a substrate, through a resist pattern formed from a resist film laminated on the organic film, for use as an etching mask for the etching target film. | 02-19-2009 |
| 20090053901 | HIGH DOSE IMPLANTATION STRIP (HDIS) IN H2 BASE CHEMISTRY - Plasma is generated using elemental hydrogen, a weak oxidizing agent, and a fluorine containing gas. An inert gas is introduced to the plasma downstream of the plasma source and upstream of a showerhead that directs gas mixture into the reaction chamber where the mixture reacts with the high-dose implant resist. The process removes both the crust and bulk resist layers at a high strip rate, and leaves the work piece surface substantially residue free with low silicon loss. | 02-26-2009 |
| 20090137129 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method is provided for manufacturing a semiconductor device having a heat-resistant resin film with flip-chip connection structure using a solder bump or a gold bump and an epoxy resin compound laminated thereon, in which adhesiveness is improved particularly after exposure to high temperature and high humidity environments for a long period of time, thereby enhancing the reliability of the semiconductor device. The method, in accordance with the present invention, for manufacturing a semiconductor device having a heat-resistant resin film formed on a semiconductor element and an epoxy resin compound layer laminated thereon, comprises the steps of carrying out a plasma treatment on a surface of the heat-resistant resin film on which the epoxy resin compound layer is laminated using a nitrogen atom-containing gas containing at least one of nitrogen, ammonia, and hydrazine. | 05-28-2009 |
| 20090156013 | Method and apparatus for removing polymer from the wafer backside and edge - Polymer is removed from the backside of a wafer held on a support pedestal in a reactor using an arcuate side gas injection nozzle extending through the reactor side wall with a curvature matched to the wafer edge and supplied with plasma by-products from a remote plasma source. | 06-18-2009 |
| 20090311871 | ORGANIC ARC ETCH SELECTIVE FOR IMMERSION PHOTORESIST - A method for forming etch features in an etch layer over a substrate and below an organic ARC layer, which is below an immersion lithography photoresist mask is provided. The substrate with the etch layer, organic ARC layer, and immersion lithography photoresist mask is placed into a processing chamber. The organic ARC layer is opened. The organic ARC layer opening comprises flowing an organic ARC open gas mixture into the processing chamber, wherein the organic ARC open gas mixture comprises an etchant gas and a polymerization gas comprising CO, forming an organic ARC open plasma from the organic ARC open gas mixture, etching the organic ARC layer with the organic ARC open plasma until the organic ARC layer is opened, and stopping the flow of organic ARC open gas mixture into the processing chamber before the etch layer is completely etched. | 12-17-2009 |
| 20100216312 | RESIST REMOVING METHOD, SEMICONDUCTOR MANUFACTURING METHOD, AND RESIST REMOVING APPARATUS - This invention provides a resist removing apparatus for removing a resist comprising a deteriorated layer and an undeteriorated layer from a substrate. The apparatus carries out the step of bringing radicals, reduced by subjecting any one of or a mixture of two or more of nitrogen, oxygen, hydrogen, and steam to plasma treatment under a low pressure, into contact with the substrate to remove the resist, and the step of bringing ozone water into contact with the substrate to remove the resist. In the step of removing the resist by radicals, a large part of the undeteriorated layer is allowed to remain by regulating the radical contact time depending upon conditions for the formation of the deteriorated layer on the resist surface. Alternatively, a large part of the undeteriorated layer may be allowed to remain by conducting process control according to the results of analysis of a reactant gas discharged during the removal of the resist. | 08-26-2010 |
| 20100240221 | Methods of Forming Patterns for Semiconductor Devices - Provided are methods of forming patterns of semiconductor devices, whereby patterns having various widths may be simultaneously formed, and a pattern density may be doubled by a double patterning process in a portion of the semiconductor device. A dual mask layer is formed on a substrate. A variable mask layer is formed on the dual mask layer. A first photoresist pattern having a first thickness and a first width in the first region, and a second photoresist pattern having a second thickness greater than the first thickness and a second width wider than the first width in the second region are formed on the variable mask layer. A first mask pattern and a first variable mask pattern are formed in the first region, and a second mask pattern and a second variable mask pattern are formed in the second region, by sequentially etching the variable mask layer and the dual mask layer by using, as etch masks, the first photoresist pattern and the second photoresist pattern. First spacers covering side walls of the first mask pattern and second spacers covering side walls of the second mask pattern are formed. The first mask pattern is removed, and then the substrate is etched in the first region and the second region by using the first spacers as an etch mask in the first region, and the second mask pattern and the second spacers as an etch mask in the second region. | 09-23-2010 |
| 20110070743 | APPARATUS AND METHODS FOR EDGE RING IMPLEMENTATION FOR SUBSTRATE PROCESSING - A method for processing a substrate in a plasma processing chamber is provided. The substrate is disposed above a chuck and surrounded by a first edge ring. The first edge ring is electrically isolated from the chuck. The method includes providing a second edge ring. The second edge ring is disposed below an edge of the substrate. The method also includes providing a coupling ring. The coupling ring is configured to facilitate RF coupling from an ESC (electrostatic chuck) assembly to the first edge ring, thereby causing the first edge ring to have an edge ring potential during substrate processing and causing the RF coupling to be maximized at the first edge ring and minimized at the second edge ring during the substrate processing. The method also includes providing an insulator ring, wherein the second edge ring is disposed above the insulator ring. | 03-24-2011 |
| 20110159699 | LINE-EDGE ROUGHNESS IMPROVEMENT FOR SMALL PITCHES - A method for mitigating line-edge roughness on a semiconductor device. The method includes line-edge roughness mitigation techniques in accordance with embodiments of the present invention. The techniques include: reducing the SiON film thickness below a conventional thickness; increasing the photoresist thickness above a conventional thickness; etching the SiON film with an etch bias power less than a conventional wattage amount with an overetch percentage less than a conventional overetch percentage; removing the SiON film layer immediately after completion of the amorphous carbon film layer etching; and lowering the lower electrode temperature below a conventional temperature | 06-30-2011 |
| 20110287633 | ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM - A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate. | 11-24-2011 |
| 20120149207 | METHOD FOR ETCHING ORGANIC HARDMASKS - A method of etching or removing an amorphous carbon organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an amorphous carbon organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the amorphous carbon organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture to create a plasma of the mixture. The method further includes contacting the amorphous carbon organic hardmask with the plasma, with the amorphous carbon organic hardmask being at a temperature in excess of 200° C., to remove the amorphous carbon organic hardmask without substantially harming the underlying substrate. | 06-14-2012 |
| 20120196446 | METHOD FOR ETCHING ORGANIC HARDMASKS - A method of etching or removing an organic hardmask overlying a low dielectric constant film in a lithographic process. The method includes providing a dielectric film having thereover an organic hardmask to be removed, the dielectric film having a dielectric constant no greater than about 4.0, introducing over the organic hardmask an ionizable gas comprising a mixture of hydrogen and an oxidizing gas, and applying energy to the mixture to create a plasma of the mixture. The method further includes contacting the organic hardmask with the plasma, with the organic hardmask being at a temperature in excess of 200° C., to remove the organic hardmask without substantially harming the underlying substrate. | 08-02-2012 |
| 20130122714 | PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM - A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals. | 05-16-2013 |
| 20140120733 | LOW DAMAGE PHOTORESIST STRIP METHOD FOR LOW-K DIELECTRICS - Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C. | 05-01-2014 |
| 20140134848 | PLASMA ETCHING METHOD AND PLASMA ETCHING APPARATUS - Disclosed is a plasma etching method which suppresses the narrowing of the line-width of the line formed by etching and maintain the height of a remaining photoresist. The plasma etching method includes a modification process and an etching process. The modification process modifies a photoresist having a predetermined pattern by plasma of HBr/Ar gas while applying a negative DC voltage to an upper electrode containing silicon disposed to face a target object in which an organic film and the photoresist are sequentially laminated. The etching process etches the organic film by plasma of a processing gas which contains a CF-based gas and a CHF-based gas. | 05-15-2014 |
| 20140370717 | ETCH PROCESS FOR REDUCING DIRECTED SELF ASSEMBLY PATTERN DEFECTIVITY - Provided is a method for preparing a patterned directed self-assembly layer, comprising: providing a substrate having a block copolymer layer comprising a first phase-separated polymer defining a first pattern in the block copolymer layer and a second phase-separated polymer defining a second pattern in the block copolymer layer; and performing an etching process to selectively remove the second phase-separated polymer while leaving behind the first pattern of the first phase-separated polymer on the surface of the substrate, the etching process being performed at a substrate temperature less than or equal to about 20 degrees C. The method further comprises providing a substrate holder for supporting the substrate, the substrate holder having a first temperature control element for controlling a first temperature at a central region and second temperature control element at an edge region of the substrate and setting a target value for the first and the second temperature. | 12-18-2014 |
| 20140370718 | ETCH PROCESS FOR REDUCING DIRECTED SELF ASSEMBLY PATTERN DEFECTIVITY USING DIRECT CURRENT POSITIONING - A method for preparing a patterned directed self-assembly layer for reducing directed self-assembly pattern defectivity using direct current superpositioning is provided. A substrate having a block copolymer layer overlying a first intermediate layer, said block copolymer layer comprising a first phase-separated polymer defining a first pattern and a second phase-separated polymer defining a second pattern in said block copolymer layer is provided. A first plasma etching process using plasma formed of a first process composition to remove said second phase-separated polymer while leaving behind said first pattern of said first phase-separated polymer is performed. A second plasma etching process to transfer said first pattern into said first intermediate layer using plasma formed of a second process composition is performed. In an embodiment, said first phase-separated polymer is exposed to an electron beam preceding, during, or following said first plasma etching process, or preceding or during said second plasma etching process. | 12-18-2014 |
| 20150072534 | ETCHING METHOD OF MULTILAYER FILM - A plasma processing apparatus for performing a plasma process on a substrate includes: a mounting table configured to mount thereon the substrate; an electromagnet including a core member and a plurality of coils; a current source connected to both ends of the coils for supplying currents to the coils; and a control unit configured to control the current source to start or stop and to control a current value of the current source. The core member is made of a magnetic material and has a structure including a column-shaped member, multiple cylindrical members, and a base member. The plurality of coils are accommodated in grooves and wound around an outer peripheral surface of the column-shaped member and the cylindrical members, and the grooves are formed between the column-shaped member and one of the cylindrical members and between the cylindrical members. | 03-12-2015 |
| 20150132971 | PLASMA GENERATION AND PULSED PLASMA ETCHING - One or more plasma etching techniques are provided. Selective plasma etching is achieved by introducing a gas into a chamber containing a photoresist over a substrate, establishing a bias at a frequency to convert the gas to a plasma at the frequency, and using the plasma to etch the photoresist. The frequency controls an electron density of the plasma and by maintaining a low electron density causes free radicals of the plasma to chemically etch the photoresist, rather than physically etching using ion bombardment. A mechanism is thus provided for chemically etching a photoresist under what are typically physical etching conditions. | 05-14-2015 |
| 20150357202 | PEROXIDE-VAPOR TREATMENT FOR ENHANCING PHOTORESIST-STRIP PERFORMANCE AND MODIFYING ORGANIC FILMS - Methods and apparatus for treating an organic film such as photoresist with a hydroxyl-generating compound prior to removing the organic film from a substrate are provided. Treatments include exposure to one or more of hydrogen peroxide vapor and water vapor in a non-plasma environment. In some implementations, conditions are such that condensation on the surface is suppressed. Methods include treating high-dose ion-implantation photoresists and post-plasma doping photoresists with little or no material loss and permit mild plasma removal of the photoresist after treatment. | 12-10-2015 |
| 20160042943 | LOW-K DIELECTRIC FILM FORMATION - Methods and apparatus for fabricating a porous, low-k dielectric film are described. In some implementations, the methods include exposing a precursor film including a porogen within a matrix to a plasma generated from a weak oxidizer. The plasma may also include reducing agent species. In some implementations, the plasma is a downstream plasma. Implementations of the method involve selectively removing regions of isolated, organic porogen co-existing within a silicon-organic matrix by exposure to the plasma while preserving the organic groups bonded to the backbone of the silicon matrix. The methods also result in low damage to the dielectric film. In some implementations, plasma exposure is followed by exposure to ultraviolet (UV) radiation. | 02-11-2016 |
| 20160163563 | ETCHING METHOD - There is provided an etching method for etching an object to be processed by using a substrate processing apparatus including a process chamber including a first electrode and a second electrode disposed opposite to the first electrode to receive the object to be processed thereon. The etching method includes a process of removing at least one of a first polymer and a second polymer by etching the object to be processed on which a pattern of the first polymer and the second polymer is formed by phase separation of a block copolymer containing the first polymer and the second polymer at a temperature lower than or equal to 10 degrees C. by using plasma of a process gas. | 06-09-2016 |
