Class / Patent application number | Description | Number of patent applications / Date published |
438718000 | Compound semiconductor | 12 |
20080268647 | METHOD OF PLASMA ETCHING WITH PATTERN MASK - The present invention provides a method of plasma etching with pattern mask. There are two different devices in the two section of a wafer, comprising silicon and Gallium Arsenide (GaAs). The Silicon section is for general semiconductor. And the GaAs section is for RF device. The material of pad in the silicon is usually metal, and metal oxide is usually formed on the pads. The metal oxide is unwanted for further process; therefore it should be removed by plasma etching process. A film is attached to the surface of the substrate exposing the area need for etching. Then a mask is attached and aligned onto the film therefore exposing the area need for etching. Then plasma dry etching is applied on the substrate for removing the metal oxide. | 10-30-2008 |
20100279511 | Wafer Through Silicon Via Forming Method And Equipment Therefor - Provided are a wafer through silicon via (TSV) forming method and equipment therefor. The wafer TSV forming method includes the operations of arranging a wafer having a front surface having a circuit area patterned thereon; recognizing locations of bond pads in the circuit area of the front surface of the wafer by using an image recognition camera, and converting the recognition of the locations into bond pad location information with respect to a back surface of the wafer; flipping the wafer; forming etching holes with middle depth in the back surface of the wafer by using a laser in a manner to match the locations of the bond pads by using the bond pad location information from the image recognition camera; and performing a plasma isotropic etching on the back surface having formed therein the etching holes with middle depth, thereby forming TSVs penetrating the bond pads. | 11-04-2010 |
20120083130 | APPARATUS AND METHODS FOR SHIELDING A PLASMA ETCHER ELECTRODE - Apparatus and methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer on a feature plate within a chamber of a plasma etcher, providing a plasma source gas within the chamber, providing an anode above the feature plate and a cathode below the feature plate, connecting a portion of the cathode to the feature plate, generating plasma ions using a radio frequency power source and the plasma source gas, directing the plasma ions toward the wafer using an electric field, and providing an electrode shield around the cathode. The electrode shield is configured to protect the cathode from ions directed toward the cathode including the portion of the cathode connected to the feature plate. | 04-05-2012 |
20120238102 | METHODS FOR ETCH OF SIN FILMS - A method of selectively etching silicon nitride from a substrate comprising a silicon nitride layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the silicon nitride layer at a higher etch rate than the reactive gas etches the silicon oxide layer. | 09-20-2012 |
20130034968 | DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS - A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide. | 02-07-2013 |
20140273491 | DRY-ETCH FOR SILICON-AND-CARBON-CONTAINING FILMS - A method of etching exposed silicon-and-carbon-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-carbon-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-carbon-containing material from the exposed silicon-and-carbon-containing material regions while very slowly removing other exposed materials. The silicon-and-carbon-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-carbon-containing material at more than twenty times the rate of silicon oxide. | 09-18-2014 |
20140302683 | DRY ETCHING AGENT - The invention is directed to providing a dry etching agent having little effect on the global environment but having the required performance. Provided is a dry etching agent containing, each at a specific vol %: (A) a fluorine-containing unsaturated hydrocarbon represented by the formula C | 10-09-2014 |
20140357087 | APPARATUS AND METHOD FOR ETCHING ORGANIC LAYER - Provided are an apparatus and method for etching an organic layer, in which an organic material deposited in a non-layer forming area of a substrate is etched. The apparatus includes an etching chamber; a plasma generator configured to supply plasma into the etching chamber; a stage disposed in the etching chamber and configured to support the substrate; and a mask configured to guide the plasma toward the non-pixel area. | 12-04-2014 |
20150099368 | DRY ETCHING METHOD - In a dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film composed of the Si layers and SiGe layers alternately and repeatedly laminated, the each of the SiGe layers is plasma-etched with pulse-modulated plasma using NF | 04-09-2015 |
20150126039 | ETCH SUPPRESSION WITH GERMANIUM - Methods of selectively etching silicon relative to silicon germanium are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon. The plasmas effluents react with exposed surfaces and selectively remove silicon while very slowly removing other exposed materials. The methods are useful for removing Si | 05-07-2015 |
20150126040 | SILICON GERMANIUM PROCESSING - Methods of selectively etching silicon germanium relative to silicon are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the silicon germanium. The plasmas effluents react with exposed surfaces and selectively remove silicon germanium while very slowly removing other exposed materials. Generally speaking, the methods are useful for removing Si | 05-07-2015 |
20160181118 | PLASMA PROCESSING METHOD | 06-23-2016 |