| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438717000 | Utilizing multilayered mask | 19 |
| 20080254638 | ETCH PROCESS WITH CONTROLLED CRITICAL DIMENSION SHRINK - Methods to etch an opening in a substrate layer with reduced critical dimensions are described. A multi-layered mask including a lithographically patterned photoresist and an unpatterned organic antireflective coating (BARC) is formed over a substrate layer to be etched. The BARC layer is etched with a significant negative etch bias to reduce the critical dimension of the opening in the multi-layer mask below the lithographically define dimension in the photoresist. The significant negative etch bias of the BARC etch is then utilized to etch an opening having a reduced critical dimension into the substrate layer. To plasma etch an opening in the BARC with a significant negative etch bias, a polymerizing chemistry, such as CHF | 10-16-2008 |
| 20090061638 | METHOD FOR FABRICATING MICROPATTERN OF SEMICONDUCTOR DEVICE - A method for fabricating a micropattern of a semiconductor device is provided. The method includes forming a first hard mask over an etch target layer, forming a first sacrificial layer over the first hard mask, etching the first sacrificial layer to form a sacrificial pattern and forming spacers on both sidewalls of the sacrificial pattern, A second sacrificial layer is formed over the spacers and the first hard mask. A dummy mask is formed in a bent portion of the second sacrificial layer between the adjacent spacers. The sacrificial pattern and the second sacrificial layer are etched using the dummy mask and the spacers as an etch barrier layer to form a dummy pattern between the adjacent spacers. The first hard mask is etched using the spacers and the dummy pattern as an etch barrier layer to form a first hard mask pattern. | 03-05-2009 |
| 20090197422 | REDUCING DAMAGE TO LOW-K MATERIALS DURING PHOTORESIST STRIPPING - A method of forming features in a porous low-k dielectric layer disposed below a patterned organic mask is provided. Features are etched into the porous low-k dielectric layer through the patterned organic mask, and then the patterned organic mask is stripped. The stripping of the patterned organic mask includes providing a stripping gas comprising COS, forming a plasma from the stripping gas, and stopping the stripping gas. A cap layer may be provided between the porous low-k dielectric layer and the patterned organic mask. The stripping of the patterned organic mask leaves the cap layer on the porous low-k dielectric layer. | 08-06-2009 |
| 20090269935 | Method of Forming Pattern of Semiconductor Device - A method of forming patterns of a semiconductor device, wherein a hard mask is formed over a semiconductor substrate; a photoresist comprising silicon-containing molecules is formed over the hard mask; a first exposure process is performed on first regions of the photoresist; a second exposure process is performed on second regions of the photoresist, which are located between the first regions; a bake process is performed on the photoresist; and, an etch process using the first regions and the second regions as etch mask patterns is performed, thereby patterning the photoresist and the hard mask. | 10-29-2009 |
| 20100105213 | FORMING METHOD OF AMORPHOUS CARBON FILM, AMORPHOUS CARBON FILM, MULTILAYER RESIST FILM, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND COMPUTER-READABLE STORAGE MEDIUM - An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode. | 04-29-2010 |
| 20100130019 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method for a semiconductor device includes: forming a first layer on a member to be etched; forming a first hard mask that includes a first hard mask pattern, in the first layer; forming a second layer on the first hard mask and on an exposed surface of the member to be etched; removing by selective etching the second layer to form a side wall core that includes a core pattern; forming side wall spacers on side walls of the side wall core; and using the side wall spacers and the first hard mask to remove by etching the member to be etched. | 05-27-2010 |
| 20100184300 | SELF-ALIGNED MASKS USING MULTI-TEMPERATURE PHASE-CHANGE MATERIALS - A method of forming a pattern includes forming a first layer on a substrate, forming a second layer on the first layer, depositing a multi-temperature phase-change material on the second layer, patterning the second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, and patterning the first layer using the reflowed multi-temperature phase-change material as a mask. | 07-22-2010 |
| 20100248491 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING A DOUBLE PATTERNING PROCESS - A method for performing a double pattering process of a semiconductor device is provided. The method includes forming a hard mask layer having a stack structure of a first layer, a second layer and a third layer in sequence, forming a first photoresist pattern over the hard mask layer, etching the third layer to form third layer patterns by using the first photoresist pattern as an etch barrier, forming a second photoresist pattern over the third layer patterns, etching the second layer to form second layer patterns by using the second photoresist pattern and the third layer patterns as an etch barrier, removing the second photoresist pattern, and etching the first layer to form first layer patterns by using the second layer patterns as an etch barrier. | 09-30-2010 |
| 20100297850 | SELECTIVE SELF-ALIGNED DOUBLE PATTERNING OF REGIONS IN AN INTEGRATED CIRCUIT DEVICE - A selective self-aligned dual patterning method. The method includes performing a single lithography operation to form a patterned mask having a narrow feature in a region of a substrate that is to a have pitch-reduced feature and a wide feature in a region of the substrate that is to have a non-pitch-reduced feature. Using the patterned mask, a template mask is formed with a first etch and the patterned mask is then removed from the narrow feature while being retained over the wide feature. The template mask is then thinned with a second etch to introduce a thickness delta in the template mask between the narrow and wide features. A spacer mask is then formed and the thinned narrow template mask is removed to leave a pitch double spacer mask while the thick wide template mask feature is retained to leave a non-pitch reduced mask. | 11-25-2010 |
| 20110250761 | PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, AND COMPUTER-READABLE STORAGE MEDIUM - A plasma etching method is provided to perform a plasma etching on a silicon oxide film or a silicon nitride film formed below an amorphous carbon film by using a pattern of the amorphous carbon film as a final mask in a multilayer mask including a photoresist layer having a predetermined pattern, an organic bottom anti-reflection coating (BARC) film formed below the photoresist layer, an SiON film formed below the BARC film, and the amorphous carbon film formed below the SiON film. An initial mask used at the time when the plasma etching of the silicon oxide film or the silicon nitride film is started is under a state in which the SiON film remains on the amorphous carbon film and a ratio of a film thickness of the amorphous carbon film to a film thickness of the residual SiON film is smaller than or equal to about 14. | 10-13-2011 |
| 20120003838 | PLASMA ETCHING METHOD - Line-wiggling and striation caused by collapse of a pattern after a silicon dioxide film is etched by plasma with the use of a multilayer resist mask are prevented or suppressed. In a plasma etching method of etching a film to be etched by plasma with the use of a multilayer resist mask, the multilayer resist mask includes an upper layer resist, an inorganic intermediate film, and a lower layer resist, and the method includes a side wall protective film forming step of forming a side wall protective film on a side wall of the lower layer resist. | 01-05-2012 |
| 20120276747 | PREVENTION OF LINE BENDING AND TILTING FOR ETCH WITH TRI-LAYER MASK - A method for etching features in an etch layer is provided. An organic mask layer is etched, using a hard mask as an etch mask. The hard mask is removed, by selectively etching the hard mask with respect to the organic mask and etch layer. Features are etched in the etch layer, using the organic mask as an etch mask. | 11-01-2012 |
| 20140051256 | ETCH WITH MIXED MODE PULSING - A method for etching a dielectric layer disposed below a patterned organic mask with features, with hardmasks at bottoms of some of the organic mask features is provided. An etch gas is provided. The etch gas is formed into a plasma. A bias RF with a frequency between 2 and 60 MHz is provided that provides pulsed bias with a pulse frequency between 10 Hz and 1 kHz wherein the pulsed bias selectively deposits on top of the organic mask with respect to the dielectric layer. | 02-20-2014 |
| 20140187050 | METHOD FOR ISOTROPIC ETCHING - According to one embodiment, the invention relates to a method for the anisotropic etching of patterns in at least one layer to be etched through a hard mask comprising carbon in an inductive-coupling plasma etching reactor (ICP), the method being characterized in that the hard mask is made from boron doped with carbon (B:C), and in that, prior to the anisotropic etching of the patterns in said layer to be etched through the hard mask of carbon-doped boron (B:C), the following steps are performed:
| 07-03-2014 |
| 20140206199 | ETCHING METHOD OF MULTILAYER FILM - In an etching method of a multilayer film including a first oxide film and a second oxide film, a high frequency power in etching an organic film is set to be higher than those in etching a first and second oxide films, and high frequency bias powers in the etching of the first and second oxide films are set to be higher than that in the etching of the organic film. In the etching of the first and second oxide films and the organic film, a magnetic field is generated such that horizontal magnetic field components in a radial direction with respect to a central axis line of a target object have an intensity distribution having a peak value at a position far from the central axis line, and a position of the peak value in the etching of the organic film is closer to the central axis line. | 07-24-2014 |
| 20140273490 | METHOD FOR IMPROVING CD MICRO-LOADING IN PHOTOMASK PLASMA ETCHING - Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl | 09-18-2014 |
| 20150056816 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND COMPUTER-READABLE STORAGE MEDIUM - A semiconductor device manufacturing method for etching a substrate having a multilayer film formed by alternately stacking a first film and a second film, and a photoresist layer to form a step-shaped structure is provided. The step-shaped structure is formed by repeatedly performing a first step of plasma-etching the first film by using the photoresist layer as a mask, a second step of exposing the photoresist layer formed on the substrate to a plasma generated from a processing gas containing argon gas and hydrogen gas by applying a high frequency power to a lower electrode while applying a negative DC voltage to an upper electrode, a third step of trimming the photoresist layer, and a fourth step of plasma-etching the second film. | 02-26-2015 |
| 20150064924 | METHOD FOR ETCHING ORGANIC FILM AND PLASMA ETCHING DEVICE - In a method for etching an organic film according to an embodiment, a target object that has an organic film is set in a processing chamber. Then, a processing gas containing COS gas and O | 03-05-2015 |
| 20160172205 | PLASMA ETCHING METHOD | 06-16-2016 |
