Entries |
Document | Title | Date |
20080200032 | POLISHING METHOD OF SEMICONDUCTOR SUBSTRATE - The present invention relates to a method of polishing a semiconductor substrate, comprising pressing a semiconductor substrate having a film to be polished that is held by a carrier onto a polishing cloth fixed on a revolving polishing table and supplying a polishing slurry to the space between the polishing cloth and the semiconductor substrate, wherein the end point of polishing is determined according to the change in the friction coefficient while the friction coefficient between the semiconductor substrate and the polishing cloth is measured. According to the present invention it is possible to measure friction coefficient accurately in polishing a semiconductor substrate and use the change thereof to determine the end point of polishing. | 08-21-2008 |
20090117739 | METHOD FOR FORMING PATTERN IN SEMICONDUCTOR DEVICE - A method for forming a pattern in a semiconductor device includes forming an etch-target layer over a substrate, wherein the substrate includes a first region having a smaller pattern than the first region, forming a sacrificial layer and a passivation layer over the etch-target layer, etching the passivation layer and the sacrificial layer to form stack structures including a sacrificial pattern and a passivation pattern, forming spacers over sidewalls of the stack structures, forming a mask pattern covering the second region, removing a portion of the passivation pattern in the first region exposed by the mask pattern to expose a portion of the sacrificial pattern in the first region, removing the exposed portion of the sacrificial pattern in the first region, and etching the etch-target layer to form an etch-target pattern using the spacers in the first and second regions and the stack structure formed between the spacers in the second region. | 05-07-2009 |
20100216308 | METHOD FOR ETCHING 3D STRUCTURES IN A SEMICONDUCTOR SUBSTRATE, INCLUDING SURFACE PREPARATION - A method is provided for producing 3D structures in a semiconductor substrate using Deep Reactive Ion Etching (DRIE), comprising at least the steps of: providing a substrate, and then grinding the backside of the substrate in order to achieve a thinned substrate, wherein extrusions and native oxides are left after said grinding step, and then performing a surface treatment selected from the group consisting of a wet etching step and a dry etching step in order to remove at least said native oxides and extrusions on the surface of said backside of the substrate which are causes for the grass formation during subsequent etching, and then performing deep reactive ion etching in order to achieve 3D vias. | 08-26-2010 |
20110207325 | METHOD OF MANUFACTURING SUBSTRATE AND ORGANIC EMITTING DISPLAY DEVICE HAVING THE SUBSTRATE - Provided are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a substrate; an sealing substrate facing the substrate, an organic light emitting unit disposed between the substrate and the sealing substrate and having a plurality of organic light emitting devices emitting light, and a plurality of grooves formed in a light extracting surface of the organic light emitting display device through which the light is emitted to the outside. In one embodiment, the grooves are formed on the sealing substrate, and in another embodiment, the grooves are formed on the substrate. | 08-25-2011 |
20120122314 | MEMS ELEMENT - A method of manufacturing an electronic device that comprises a microelectromechanical (MEMS) element, the method comprising the steps of: providing a material layer (34) on a first side of a substrate (32); providing a trench (40) in the material later (34); etching material from the trench (40) such as to also etch the substrate (32) from the first side of the substrate (32); grinding the substrate (32) from a second side of the substrate to expose the trench (40); and using the exposed trench (40) as an etch hole. The exposed trench (40) is used as an etch hole for releasing a portion of the material layer (34), for example a beam resonator (12), from the substrate (32). An input electrode (6), an output electrode (8), and a top electrode (10) are provided. | 05-17-2012 |
20120129344 | PROCESS AND APPARATUS FOR REMOVAL OF CONTAMINATING MATERIAL FROM SUBSTRATES - A process for removing contaminating metals from a substrate to improve electrical performance is provided. Polycationic metals are known to be particularly detrimental to the electrical properties of an insulator or semiconductor substrate. The process includes the exposure of the substrate to an aqueous solution of at least one compound of the formula: (I) where n in each occurrence is independently an integer value between 0 and 6, and X is independently in each occurrence H, NR | 05-24-2012 |
20140030891 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device according to an embodiment includes a process of forming a metal film on the surface of the insulation film with which a concave portion is filled and a first polishing process of polishing the surface of the metal film while supplying an oxidation agent containing no abrasive grains. The method of manufacturing the semiconductor device further includes a second polishing process of polishing the surface of the metal film while supplying a polishing agent excluding the oxidation agent to the surface of the metal film oxidized by the oxidation agent, after the first polishing process. | 01-30-2014 |
20140248774 | LIQUID TREATMENT APPARATUS AND LIQUID TREATMENT METHOD - The liquid treatment apparatus according to the present invention includes a substrate holder configured to horizontally hold a substrate, and a top plate configured to be rotatable and to cover the substrate held by the substrate holder from above so as to define a treatment space. In the treatment space, a chemical liquid is supplied by a chemical liquid nozzle onto the substrate, and an atmosphere replacement gas is supplied by a replacement nozzle into the treatment space. The replacement nozzle is supported by a replacement nozzle support arm configured to be horizontally moved between an advanced position at which the replacement nozzle support arm is advanced into the treatment space and a retracted position at which the replacement nozzle support arm is retracted outside from the treatment space. The replacement nozzle is configured to discharge, above the substrate, the atmosphere replacement gas upward. | 09-04-2014 |
20140349482 | METHOD OF FORMING FIN-SHAPED STRUCTURE - A method of forming fin-shaped structures includes the following steps. A plurality of spacers is formed on a substrate. The substrate is etched by using the spacers as hard masks to form a plurality of fin-shaped structures in the substrate. A cutting process is then performed to remove parts of the fin-shaped structures and the spacers formed on the removed parts. | 11-27-2014 |
20150099360 | METHOD TO REDUCE K VALUE OF DIELECTRIC LAYER FOR ADVANCED FINFET FORMATION - Embodiments described herein generally relate to methods for forming gate structures. Various processes may be performed on a gate dielectric material to reduce the K value of the dielectric material. The gate dielectric having a reduced K value may provide for reduced parasitic capacitance and an overall reduced capacitance. The gate dielectric may be modified without thermodynamic constraint. | 04-09-2015 |
20150140817 | APPARATUSES FACILITATING FLUID FLOW INTO VIA HOLES, VENTS, AND OTHER OPENINGS COMMUNICATING WITH SURFACES OF SUBSTRATES OF SEMICONDUCTOR DEVICE COMPONENTS - A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or the at least one aperture. The fluid may be pressurized by generating a pressure differential across the substrate, which causes the fluid to flow into or through the at least one aperture or recess. Apparatus for pressurizing fluid so as to cause it to flow into or through recesses or apertures in a substrate are also disclosed. | 05-21-2015 |
20150380261 | Mechanisms for Forming Patterns Using Multiple Lithography Processes - The present disclosure provides a method for forming patterns in a semiconductor device. The method includes providing a substrate and a patterning-target layer over the substrate; patterning the patterning-target layer to form a main pattern; forming a middle layer over the patterning-target layer and a hard mask layer over the middle layer; patterning the hard mask layer to form a first cut pattern; patterning the hard mask layer to form a second cut pattern, a combined cut pattern being formed in the hard mask layer as a union of the first cut pattern and the second cut pattern; transferring the combined cut pattern to the middle layer; etching the patterning-target layer using the middle layer as an etching mask to form a final pattern in the patterning-target layer. In some embodiments, the final pattern includes the main pattern subtracting an intersection portion between main pattern and the combined cut pattern. | 12-31-2015 |
20160005614 | Spacer Etching Process for Integrated Circuit Design - A method includes forming a first material layer on a substrate and performing a first patterning process using a first layout to form a first plurality of trenches in the first material layer. The method further includes performing a second patterning process using a second layout to form a second plurality of trenches in the first material layer, wherein the second layout a cut pattern for the first layout. The method further includes forming spacer features on sidewalls of both the first and second pluralities of trenches, wherein the spacer features have a thickness and the cut pattern corresponds to a first trench of the second plurality whose width is less than twice the thickness of the spacer features. The method further includes removing the first material layer; forming a second material layer on the substrate and within openings defined by the spacer features; and removing the spacer features. | 01-07-2016 |
20160133480 | METHODS FOR FORMING A SELF-ALIGNED CONTACT VIA SELECTIVE LATERAL ETCH - In some embodiments methods of processing a substrate include: providing a substrate having a contact structure formed on the substrate, wherein the contact structure comprises a feature defined by gate structures, a silicon nitride layer disposed on a upper surface of the gate structures and on sidewalls and a bottom of the feature, and an oxide layer disposed over the silicon nitride layer and filling the feature; etching an opening through the oxide layer to the silicon nitride layer disposed on the bottom of the opening, wherein a width of the opening is less than a width of the feature; expanding the opening in the oxide layer to form a tapered profile; exposing the substrate to ammonia and nitrogen trifluoride to form an ammonium fluoride gas that forms an ammonium hexafluorosilicate film on the oxide layer; and heating the substrate to a second temperature to sublimate the ammonium hexafluorosilicate film. | 05-12-2016 |
20160197046 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | 07-07-2016 |