Class / Patent application number | Description | Number of patent applications / Date published |
438670000 | Utilizing lift-off | 6 |
20090023288 | METHOD OF MANUFACTURING NANOELECTRODE LINES USING NANOIMPRINT LITHOGRAPHY PROCESS - Provided are a method of manufacturing nanoelectrode lines. The method includes the steps of: sequentially forming an insulating layer, a first photoresist layer, and a drop-shaped second photoresist on a substrate; disposing an imprint mold having a plurality of molding patterns over the second photoresist; applying pressure to the mold to allow the second photoresist to flow into the mold patterns; irradiating ultraviolet (UV) light onto the mold to cure the second photoresist; removing the mold from the cured second photoresist and patterning the second photoresist; patterning the first photoresist layer using the patterned second photoresist as a mask; patterning the insulating layer; and forming a metal layer between the patterned insulating layers. In this method, metal electrode lines are formed between insulating layers using an imprint lithography process, so that nanoelectronic devices can be freed from crosstalk between the metal electrode lines. | 01-22-2009 |
20090149024 | Pattering method for a semiconductor substrate - A patterning method for a semiconductor substrate is disclosed. A substrate is provided and a stack structure is laid thereon. The stack layer includes at least a target layer and a pad layer sequentially formed on the substrate. Follow by a lithography process, wherein photoresists are laid on the stack layer to form a plurality of photoresist elements. Thus, a plurality of pattern is formed on the target layer, and a portion of target layer's surface is exposed. Lastly, ion implanting is provided and defines a doped area as hard mask for the etching process. | 06-11-2009 |
20100136787 | METHODS FOR FORMING BIT LINE CONTACTS AND BIT LINES DURING THE FORMATION OF A SEMICONDUCTOR DEVICE - A method for forming a semiconductor device comprises forming first and second bit lines at different levels. Forming the bit lines at different levels increases processing latitude, particularly the spacing between the bit lines which, with conventional processes, may strain photolithographic limits. A semiconductor device formed using the method, and an electronic system comprising the semiconductor device, are also described. | 06-03-2010 |
20130052820 | METHOD OF FORMING CONDUCTIVE PATTERN - A method of forming conductive pattern is provided. A seeding layer is formed on an underlayer. By using an energy ray, an irradiation treatment is performed on a portion of a surface of the seeding layer. The seeding layer thus includes a plurality of irradiated regions and a plurality of unirradiated regions. A conversion treatment is performed on the irradiated regions of the seeding layer. A selective growth process is performed, so as to form a conductive pattern on each unirradiated region of the seeding layer. The irradiated regions of the seeding layer are removed, so that the conductive patterns are insulated from each other. | 02-28-2013 |
20140377951 | Apparatus and Method for Removing Challenging Polymer Films and Structures from Semiconductor Wafers - The present apparatus and method are configured to remove challenging polymer films and structures from semiconductor wafers. This technique involves the use of a double soak and spray sequence with unique parameters and can be varied depending upon the application. The initial immersion step is used to initiate the swelling and dissolution of the polymer. The first spray step may include a high pressure needle to pierce through the top layer allowing more solvent to penetrate in the subsequent soak process. The second immersion can then penetrate further and faster allowing substantial penetration of the polymer by the solvent. The final high pressure spray proceeds to remove all of the polymer coating. The process ends with a final rinse and dry sequence. | 12-25-2014 |
20150126029 | DRY FILM PHOTORESIST, MANUFACTURING METHOD OF DRY FILM PHOTORESIST, METAL PATTERN FORMING METHOD AND ELECTRONIC COMPONENT - There is provided a dry film photoresist including a substrate layer constituted by a certain substrate, a resist layer disposed over the substrate layer, the resist layer including a plurality of layers, and a protective film layer disposed over the resist layer, the protective film layer protecting the resist layer. A photosensitive layer is positioned on a side of the substrate layer of the resist layer, the photosensitive layer having a dissolution rate to a certain developer that decreases by being exposed to light, and a non-photosensitive layer is positioned on a side of the protective film layer of the resist layer, the non-photosensitive layer being soluble to the developer. A dissolution rate of the non-photosensitive layer to the developer is higher than a dissolution rate of an unexposed portion in the photosensitive layer to the developer. | 05-07-2015 |