| Class / Patent application number | Description | Number of patent applications / Date published |
|---|
| 438619000 | Air bridge structure | 11 |
| 20080227286 | METHOD FOR MANUFACTURING AN INTERCONNECTION STRUCTURE WITH CAVITIES FOR AN INTEGRATED CIRCUIT - The invention relates to a method for manufacturing a structure of electrical interconnections of the damascene type for an integrated circuit, comprising at least one level of interconnections, consisting of electrical conductors arranged on a substrate and separated from one another by air gaps, a layer of electrically isolating material covering the level of interconnections, the method comprising steps consisting of:
| 09-18-2008 |
| 20080274609 | Method and structure for low-K interlayer dielectric layer - An integrated circuit interconnect structure. The structure includes a substrate and a layer of transistor elements overlying the substrate. A first interlayer dielectric layer is formed overlying the layer of transistor elements. An etch stop layer is formed overlying the first interlayer dielectric layer. A contact structure including metallization is within the first interlayer dielectric layer and a metal layer is coupled to the contact structure. A passivation layer is formed overlying the metal layer. Preferably, an air gap layer is coupled between the passivation layer and the metal layer, the air gap layer allowing a portion of the metal layer to be free standing. Depending upon the embodiment, a portion of the air gap layer may be filled with silicon bearing nanoparticles, which may be oxidized at low temperatures. This oxidized layer provides mechanical support and low k dielectric characteristics. Preferably, a portion of the air gap layer is filled with a low k dielectric material as well. | 11-06-2008 |
| 20080299758 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A high-density N-type diffusion layer | 12-04-2008 |
| 20090042383 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A method of forming a dielectric layer having an air gap to isolate adjacent wirings or a gate stack of the semiconductor device is provided. A method of fabricating a semiconductor device includes providing a semiconductor substrate on which a plurality of wirings are formed adjacent to one another and forming a dielectric layer filling an upper portion of a space between the adjacent wirings to form air gaps by a thermal chemical vapor deposition method. | 02-12-2009 |
| 20090280638 | Process for Producing Air Gaps in Microstructures, Especially of the Air Gap Interconnect Structure Type for Integrated Circuits - The invention relates to a process for producing at least one air gap in a microstructure, which comprises:
| 11-12-2009 |
| 20100151671 | NOVEL AIR GAP INTEGRATION SCHEME - Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material. | 06-17-2010 |
| 20110027985 | SEMICONDUCTOR DEVICE HAVING AERIAL WIRING AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a first aerial wiring including a first wiring layer which is formed in an air gap and contains Cu as a main component and a via layer which is electrically connected to the first wiring layer, is formed in an inter-level insulating film containing a preset constituent element and contains Cu as a main component, and a first porous film formed on the first aerial wiring. The semiconductor device further includes a first barrier film which is formed to cover the surface of the first aerial wiring and contains a compound of the preset constituent element and a preset metal element as a main component. | 02-03-2011 |
| 20120009778 | MICRO ELECTRO-MECHANICAL SENSOR (MEMS) FABRICATED WITH RIBBON WIRE BONDS - A micro electro-mechanical sensor is provided. The micro electro-mechanical sensor includes a substrate, and a conducting plane disposed on the substrate. A conducting via is disposed on the substrate, such as adjacent to the conducting plane. A plurality of ribbon conductors are disposed over the conducting plane and electrically connected to the conducting via, such that the plurality of ribbon conductors form a transducer array in combination with the conducting plane, such as through capacitive coupling that changes in response to changes in the physical shape of the plurality of ribbons. | 01-12-2012 |
| 20120094481 | METHOD OF MANUFACTURING AIRBRIDGE - In making an airbridge structure, a second resist layer is applied over a first resist layer. The resist layers are exposed and developed to have a predetermined width W | 04-19-2012 |
| 20130012017 | MICROELECTRONIC STRUCTURE INCLUDING AIR GAP - A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure. | 01-10-2013 |
| 20160071809 | AIR BRIDGE STRUCTURE HAVING DIELECTRIC COATING - A substrate having an air bridge structure with end portions disposed and supported on the substrate and an elevated portion disposed between the end portions is coated with a protective layer. The protective layer is patterned to: leave portions of the protective layer over elevated portion and at least over the end portions of a region under the elevated portion of the air bridge structure; and remove portions over adjacent portions of the substrate. A dielectric material having a thickness greater than the height of the air bridge structure is deposited over the patterned protective layer portions remaining over elevated portion and over the adjacent portions of the substrate, the patterned temporary coating preventing the to dielectric material from passing into the region under the elevated portion of the air bridge structure. The dielectric material is patterned to remove portions of the dielectric material over the patterned protective layer remaining over elevated portion while leaving the dielectric material over the adjacent portions of the substrate. The patterned protective layer portions remaining over elevated portion are removed while leaving the dielectric material over the adjacent portions of the substrate. | 03-10-2016 |
